Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2003
10/02/2003US20030183677 Micro C-4 semiconductor die and method for depositing connection site thereon
10/02/2003US20030183672 Bonding apparatus
10/02/2003US20030183616 Ceramic heater
10/02/2003US20030183615 Ceramic heaters, a method for producing the same and articles having metal members
10/02/2003US20030183614 Heat treatment apparatus and method for processing substrates
10/02/2003US20030183613 Substrate processing apparatus and method for manufacturing semiconductor device
10/02/2003US20030183612 Pulsed processing semiconductor heating methods using combinations of heating sources
10/02/2003US20030183611 Electromagnetically levitated substrate support
10/02/2003US20030183605 Method and equipment for welding conductors to substrates
10/02/2003US20030183599 High selective ratio and high and uniform plasma processing method and system
10/02/2003US20030183530 Alternately electrodepositing and electro- mechanically polishing to selectively fill a semiconductor feature with metal including a) providing an anode assembly and a semiconductor wafer disposed in spaced apart relation
10/02/2003US20030183528 Combines a potential or current reversal waveform with variation in the amplitude and duration of the applied potential or current pulse. The method includes, over time, varying the duration of the pulse and continuously decreasing
10/02/2003US20030183527 Electroplating metal onto a low conductivity layer combines a potential or current reversal waveform with variation in the amplitude and duration of the applied potential or current pulse. The method includes, over time, varying the duration of
10/02/2003US20030183526 Superior filling properties and superior planarization of the deposited metal layer is provided. This is achieved by a method having a F/R ratio, the ratio of the electric current densities between the forward electrolysis and the reverse
10/02/2003US20030183521 Conductive material for integrated circuit fabrication
10/02/2003US20030183510 Conductive material for integrated circuit fabrication
10/02/2003US20030183491 Transport device and method of transporting to-be-processed elements through a high-temperature zone
10/02/2003US20030183490 Longitudinal conveyor
10/02/2003US20030183418 Electrical circuit and method of formation
10/02/2003US20030183416 Method of electrically coupling an electronic component to a substrate
10/02/2003US20030183341 Fixing structures and supporting structures of ceramic susceptors, and supporting members thereof
10/02/2003US20030183340 Fixing structures and supporting structures of ceramic susceptors, and supporting members thereof
10/02/2003US20030183339 Film substrate treatment apparatus, film substrate treatment method, and film substrate transport method
10/02/2003US20030183336 Plasma apparatus including plasma-measuring device
10/02/2003US20030183335 Methods and apparatus for determining an etch endpoint in a plasma processing system
10/02/2003US20030183332 Method of adhering a component to a substrate with a controlled bondline, and to a device made by the method, including steps of providing a substrate; applying a first adhesive in a plurality of selected locations on a surface of
10/02/2003US20030183318 Shrinkage inhibition, dimemsional accuracy
10/02/2003US20030183308 Method for electroplated metal annealing process
10/02/2003US20030183307 Electrical device and method of making
10/02/2003US20030183264 Collapsible play structures
10/02/2003US20030183252 A semiconductor manufacturing apparatus is described. That apparatus includes an ash chamber that has an ash chamber base, and a heating unit that is coupled to the ash chamber base. The heating unit applies heat to the ash chamber base to
10/02/2003US20030183250 Gutter and splash-guard for protecting a wafer during transfer from a single wafer cleaning chamber
10/02/2003US20030183246 An apparatus for cleaning a semiconductor substrate is provided. In embodiment of the present invention, a megasonic cleaner capable of providing localized heating is provided. The megasonic cleaner includes a transducer and a resonator.
10/02/2003US20030183172 Vaporiser for generating feed gas for an arc chamber
10/02/2003US20030183171 Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
10/02/2003US20030183168 Thermal processing apparatus and thermal processing method
10/02/2003US20030183167 Substrate processing apparatus and slit nozzle
10/02/2003US20030183165 Apparatus for manufacturing stacked type electronic part
10/02/2003US20030183163 Crystal growing apparatus
10/02/2003US20030183160 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device
10/02/2003US20030183159 Process for producing single crystal silicon wafers
10/02/2003US20030183157 Group III nitride based semiconductor substrate and process for manufacture thereof
10/02/2003US20030183154 Liquid-phase growth apparatus and method
10/02/2003US20030183153 Method for manufacturing a semiconductor device having a capping layer covering a capacitor of the semiconductor device
10/02/2003US20030183121 Copper source liquid for mocvd processes and method for the preparation thereof
10/02/2003US20030182868 A problem to be solved is to provide a slurry that is capable of flattening an uneven film on a substrate with good precision, and that has good stability, not separating into two layers, solidifying through flocculated settling or
10/02/2003US20030182799 Method for forming heat conductive device of superconductive metal block
10/02/2003US20030182794 Wafer having heterostructure therein is formed using a substrate with recesses formed within a dielectric layer. A magnetized magnetic layer or a polarized electret material is formed at the bottom of each recess. The magnetized magnetic
10/02/2003DE10208165C1 Verfahren, Steuerung und Vorrichtung zum Steuern des chemisch-mechanischen Polierens von Substraten Method, and control apparatus for controlling the chemical-mechanical polishing of substrates
10/02/2003CA2480307A1 A volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices
10/01/2003EP1349430A2 Ceramic heaters, a method for producing the same and articles having metal members
10/01/2003EP1349282A2 Mask-programmable logic device with programmable gate array sites
10/01/2003EP1349217A1 Light-emitting device and its manufacturing method and visible-light-emitting device
10/01/2003EP1349216A2 Manufacturing method for electro-optical device, electro-optical device, manufacturing method for semiconductor device, semiconductor device, projection type display apparatus, and electronic apparatus
10/01/2003EP1349215A2 Semiconductor device and semicondutor memory using the same
10/01/2003EP1349214A1 Nonvolatile semiconductor memory
10/01/2003EP1349212A2 Semiconductor integrated circuit with a shield wiring
10/01/2003EP1349208A1 Matrix display device with damascene wiring lines and method for manufacturing same
10/01/2003EP1349207A2 Semiconductor device with copper wirings
10/01/2003EP1349206A2 Power module member manufactured by wet treatment, and wet treatment method and wet treatment equipment thereof
10/01/2003EP1349205A1 Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereof
10/01/2003EP1349204A2 A method for producing a device having a semiconductor layer on a lattice mismatched substrate
10/01/2003EP1349203A2 A crystal-growth substrate and a ZnO-containing compound semiconductor device
10/01/2003EP1349202A2 Semiconductor device and method of manufacturing the same
10/01/2003EP1349201A1 Observation device and its manufacturing method, exposure device, and method for manufacturing micro device
10/01/2003EP1349200A2 Reflection plate for semiconductor heat treatment and manufacturing method thereof
10/01/2003EP1349199A1 Apparatus for mounting semiconductor chips
10/01/2003EP1349196A2 Plasma etching method and apparatus for manufacturing a semiconductor device
10/01/2003EP1349174A2 Memory embedded logic integrated circuit mounting memory circuits having different performances on the same chip
10/01/2003EP1349141A1 Capacitor discharging method for preventing afterimages in an active matrix liquid crystal display
10/01/2003EP1349091A2 LSI mask manufacturing system, LSI mask manufacturing method and LSI mask manufacturing program
10/01/2003EP1349011A2 Exposure apparatus
10/01/2003EP1349009A2 Lithographic apparatus and device manufacturing method
10/01/2003EP1349008A1 Lithographic apparatus and device manufacturing method
10/01/2003EP1349003A2 Method and apparatus for performing rule-based gate shrink utilizing dipole illumination
10/01/2003EP1349002A2 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography
10/01/2003EP1348778A1 Method for obtaining high quality InGaAsN semiconductor
10/01/2003EP1348553A1 Board for electronic device, electronic device, ferroelectric memory, electronic apparatus, ink-jet recording head, and ink-jet printer
10/01/2003EP1348236A2 Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering
10/01/2003EP1348235A2 Cu-pad bonded to cu-wire with self-passivating cu-alloys
10/01/2003EP1348233A1 Method of dry etching an antireflection coating in semiconductor devices
10/01/2003EP1348232A2 Method for contacting a doping area on a semiconductor element
10/01/2003EP1348231A2 Semiconductor structures having a compliant substrate
10/01/2003EP1348230A1 Susceptor pocket profile to improve process performance
10/01/2003EP1348229A2 Consecutive deposition system
10/01/2003EP1348226A2 Method and apparatus for improved ion acceleration in an ion implantation system
10/01/2003EP1348150A1 Method of measuring overlay
10/01/2003EP1348149A1 Method of measuring alignment of a substrate with respect to a reference alignment mark
10/01/2003EP1348134A2 Weighted random pattern test using pre-stored weights
10/01/2003EP1348048A2 Process for preparing single crystal silicon having improved gate oxide integrity
10/01/2003EP1348040A2 Windows used in thermal processing chambers
10/01/2003EP1347861A2 System and method for polishing and planarization of semiconductor wafers using reduced surface area polishing pads
10/01/2003EP1347824A2 Process and apparatus for blending and distributing a slurry solution
10/01/2003EP1347804A1 Ion implantation system and control method
10/01/2003EP1242656B1 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites
10/01/2003EP1173883B1 Device for treating silicon wafers
10/01/2003EP1112125A4 Metallization structures for microelectronic applications and process for forming the structures
10/01/2003EP1100750B1 Method for forming an oxide film with non-uniform thickness at a silicon substrate surface
10/01/2003EP1082193B1 Method and device for carrying out working steps on miniaturised modules
10/01/2003EP0965885B1 Inorganic-containing photosensitive resin composition and method for forming inorganic pattern
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