Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2012
03/21/2012CN1714407B Control of memory arrays utilizing zener diode-like devices
03/21/2012CN1706001B Memory device, motion vector detection device, and detection method
03/21/2012CN1440554B Method for performing write and read operations in passive matrix memmory, and apparatus for performing method
03/21/2012CN1350301B High-speed synchronous semiconductor memory having multi-level line-pipe structure and method of operating the memory
03/21/2012CN102388454A Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (mram) employing same
03/21/2012CN102385935A 半导体存储器件 The semiconductor memory device
03/21/2012CN102385929A Driving method of semiconductor device
03/21/2012CN102385916A Dual-port static random access memory (SRAM) unit 6T structure with reading-writing separation function
03/21/2012CN102385915A Random access memory, memory device and method for operating the memory device
03/21/2012CN102385914A Semiconductor memory and bit unit tracking method
03/21/2012CN102385913A Sampling phase correcting host controller, semiconductor device and method
03/21/2012CN102385912A Host controller for setting sampling phase, semiconductor device and method
03/21/2012CN102385911A 半导体存储器件 The semiconductor memory device
03/21/2012CN102385910A Phase reversal circuit
03/21/2012CN102385909A Storage element and storage device
03/21/2012CN101796497B Memory refresh device and memory refresh method
03/21/2012CN101361134B Method for programming non-volatile memory with reduced program disturb using modified pass voltages and storage system
03/21/2012CN101233578B Semiconductor memory
03/21/2012CN101154459B Nonvolatile semiconductor memory device
03/20/2012US8140783 Memory system for selectively transmitting command and address signals
03/20/2012US8139421 Erase degradation reduction in non-volatile memory
03/20/2012US8139420 Nonvolatile semiconductor memory device
03/20/2012US8139417 Flash memory device and read method
03/20/2012US8139416 Operation methods for memory cell and array for reducing punch through leakage
03/20/2012US8139414 Source side asymmetrical precharge programming scheme
03/20/2012US8139411 pFET nonvolatile memory
03/20/2012US8139408 Scalable electrically eraseable and programmable memory
03/20/2012US8139407 Nonvolatile semiconductor memory device including NAND-type flash memory and the like
03/20/2012US8139406 Non-volatile memory system and programming method of the same
03/20/2012US8139405 Magnetoresistive element and magnetoresistive random access memory including the same
03/20/2012US8139404 Semiconductor memory device
03/20/2012US8139403 Spin memory and spin transistor
03/20/2012US8139402 Magnetic memory device
03/20/2012US8139401 Integrated circuit with a memory matrix with a delay monitoring column
03/20/2012US8139400 Enhanced static random access memory stability using asymmetric access transistors and design structure for same
03/20/2012US8139399 Multiple cycle memory write completion
03/20/2012US8139398 Data read/write device
03/20/2012US8139397 Spatial correlation of reference cells in resistive memory array
03/20/2012US8139396 Resistance change memory and control method thereof
03/20/2012US8139395 Semiconductor memory device
03/20/2012US8139394 Semiconductor storage device
03/20/2012US8139393 Method and apparatus for non-volatile multi-bit memory
03/20/2012US8139392 Nonvolatile semiconductor memory device and writing method of the same
03/20/2012US8139391 Multi-bit resistance-switching memory cell
03/20/2012US8139390 Mixed data rates in memory devices and systems
03/20/2012US8139389 Programmable device
03/20/2012US8139388 Nonvolatile semiconductor storage device
03/20/2012US8139387 Method of erasing a memory device including complementary nonvolatile memory devices
03/20/2012US8139327 Semiconductor integrated circuit
03/20/2012US8138758 Method of controlling a magnetoresistive device using an electric field pulse
03/20/2012CA2463082C Using transfer bits during data transfer from non-volatile to volatile memories
03/15/2012WO2012033884A1 System and method for shared sensing mram
03/15/2012WO2012033106A1 Memory cell block, manufacturing method therefor, memory device, and method for driving a memory device
03/15/2012US20120064691 Method For Fabricating Multi Resistive State Memory Devices
03/15/2012US20120063222 Memory element and memory device
03/15/2012US20120063221 Memory element and memory device
03/15/2012US20120063220 Memory element and memory device
03/15/2012US20120063219 Magnetic vortex storage device
03/15/2012US20120063218 Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
03/15/2012US20120063217 Memory element and memory device
03/15/2012US20120063216 Semiconductor storage device
03/15/2012US20120063215 Semiconductor storage device
03/15/2012US20120063214 Pulse field assisted spin momentum transfer MRAM design
03/15/2012US20120063213 Semiconductor storage device and method of fabricating the same
03/15/2012US20120063212 Semiconductor device and method of manufacturing the same
03/15/2012US20120063211 Method for improving writability of sram memory
03/15/2012US20120063210 Semiconductor Device
03/15/2012US20120063209 Memory device and semiconductor device
03/15/2012US20120063208 Memory device
03/15/2012US20120063207 Semiconductor device
03/15/2012US20120063206 Semiconductor memory device
03/15/2012US20120063205 Semiconductor device
03/15/2012US20120063204 Semiconductor device
03/15/2012US20120063203 Driving method of semiconductor device
03/15/2012US20120063202 3t dram cell with added capacitance on storage node
03/15/2012US20120063201 Nonvolatile memory element, production method therefor, design support method therefor, and nonvolatile memory device
03/15/2012US20120063200 Dual Ported Non Volatile FIFO With Third Dimension Memory
03/15/2012US20120063199 Semiconductor device
03/15/2012US20120063198 Methods Of Forming Memory Cells And Methods Of Forming Programmed Memory Cells
03/15/2012US20120063197 Switchable junction with an intrinsic diode formed with a voltage dependent resistor
03/15/2012US20120063196 Resistive memory device and method of controlling refresh operation of resistive memory device
03/15/2012US20120063195 Reconfigurable Multi-level Sensing Scheme for Semiconductor Memories
03/15/2012US20120063194 Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
03/15/2012US20120063193 Multi-level resistance change memory
03/15/2012US20120063192 Three-device non-volatile memory cell
03/15/2012US20120063191 Performing Data Operations Using Non Volatile Third Dimension Memory
03/14/2012EP2428961A1 Method for improving writability of SRAM memory
03/14/2012EP2428959A1 Semiconductor device
03/14/2012EP2427884A1 Single bit line smt mram array architecture and the programming method
03/14/2012EP2186094B1 Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
03/14/2012EP2162886B1 Static memory devices
03/14/2012CN102376888A Forming resistive random access memories together with fuse arrays
03/14/2012CN102376873A 磁存储器元件 The magnetic memory element
03/14/2012CN102376739A Electronic system, memory device and providing method thereof
03/14/2012CN102376738A Magnetic memory device and method of manufacturing the same
03/14/2012CN102376716A Semiconductor device and manufacturing method
03/14/2012CN102376714A 半导体装置及其驱动方法 Semiconductor device and driving method
03/14/2012CN102376713A Semiconductor device and method for driving semiconductor device
03/14/2012CN102376707A Semiconductor device
03/14/2012CN102376353A Random storage