Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
02/2012
02/21/2012US8120947 Spin torque transfer MRAM device
02/21/2012US8120946 Stacked magnetic devices
02/21/2012US8120945 Preservation circuit and methods to maintain values representing data in one or more layers of memory
02/21/2012US8120944 Control circuit for forming process on nonvolatile variable resistive element and control method for forming process
02/21/2012US8120943 Accessing a phase change memory
02/21/2012US8120942 Semiconductor memory device
02/21/2012US8120941 Bidirectional non-volatile memory array architecture
02/21/2012US8120940 Programmable resistance memory
02/21/2012US8120937 Ternary content addressable memory using phase change devices
02/21/2012US8120126 Magnetic tunnel junction device and fabrication
02/21/2012US8120083 Polymer-based ferroelectric memory
02/16/2012WO2012020502A1 Memory control circuit and memory circuit
02/16/2012WO2012020488A1 Semiconductor storage device
02/16/2012WO2012020278A1 Data coding using divisions of memory cell states
02/16/2012WO2012019861A1 Morphing memory architecture
02/16/2012US20120042219 States Encoding in Multi-Bit Flash Cells for Optimizing Error Rate
02/16/2012US20120039133 Semiconductor device performing refresh operation
02/16/2012US20120039126 Method for driving semiconductor memory device
02/16/2012US20120039119 Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy
02/16/2012US20120039118 Providing a Ready-Busy Signal From a Non-Volatile Memory Device to a Memory Controller
02/16/2012US20120039117 Destruction of data stored in phase change memory
02/16/2012US20120039116 Phase change memory device comprising bismuth-tellurium nanowires
02/16/2012US20120039115 Stram with composite free magnetic element
02/16/2012US20120039114 Memcapacitor
02/16/2012US20120039113 Three dimensionally stacked non volatile memory units
02/16/2012US20120039112 Hierarchical Cross-Point Array of Non-Volatile Memory
02/16/2012US20120039111 Polarity dependent switch for resistive sense memory
02/16/2012US20120039110 Semiconductor memory device
02/16/2012US20120039109 Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memory Cells, Methods Of Reading To And Writing From A Memory Cell, And Methods Of Programming A Memory Cell
02/15/2012EP2418648A1 RAM memory device selectively protectable with ECC
02/15/2012EP2418647A1 Sense amplifier with adjustale back bias
02/15/2012EP2417600A2 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
02/15/2012EP2003567B1 Memory apparatus, its control method, its control program, memory card, circuit board, and electronic device
02/15/2012CN102354694A Self-aligned vertical non-volatile semiconductor memory device
02/15/2012CN102354525A Bolt-lock system used in a plurality of memory blocks of a memory circuit
02/15/2012CN102354524A Apparatus and method for preventing abnormal ROM update in portable terminal
02/15/2012CN102354523A Reservoir capacitor
02/15/2012CN101149966B 半导体存储器件及电子器件 Semiconductor memory devices and electronic devices
02/14/2012US8117382 Data writing method for non-volatile memory and controller using the same
02/14/2012US8117363 Memory module capable of improving the integrity of signals transmitted through a data bus and a command/address bus, and a memory system including the same
02/14/2012US8116141 Method analyzing threshold voltage distribution in nonvolatile memory
02/14/2012US8116139 Bit line stability detection
02/14/2012US8116138 Memory device distributed controller system
02/14/2012US8116137 Memory cell operation
02/14/2012US8116135 Non-volatile memory cell read failure reduction
02/14/2012US8116133 Maintenance operations for multi-level data storage cells
02/14/2012US8116132 Flash memory device configured to switch wordline and initialization voltages
02/14/2012US8116131 Programming method for non-volatile memory device
02/14/2012US8116130 Integrated circuits with nonvolatile memory elements
02/14/2012US8116129 Variable resistance memory device and method of manufacturing the same
02/14/2012US8116128 Semiconductor device
02/14/2012US8116127 Phase change memory devices and systems, and related programming methods
02/14/2012US8116126 Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition
02/14/2012US8116125 Method of operating a phase-change memory device
02/14/2012US8116124 Compound cell spin-torque magnetic random access memory
02/14/2012US8116123 Spin-transfer torque memory non-destructive self-reference read method
02/14/2012US8116122 Spin-transfer torque memory self-reference read method
02/14/2012US8116120 Depletion-mode MOSFET circuit and applications
02/14/2012US8116119 Desensitizing static random access memory (SRAM) to process variations
02/14/2012US8116118 Memory cell provided with dual-gate transistors, with independent asymmetric gates
02/14/2012US8116117 Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device
02/14/2012US8116116 Resistance RAM having oxide layer and solid electrolyte layer, and method for operating the same
02/14/2012US8116115 Multilevel phase change memory operation
02/14/2012US8116109 Low-cost high-density rectifier matrix memory
02/14/2012US8115244 Transistor of volatile memory device with gate dielectric structure capable of trapping charges
02/14/2012US8115239 Electric device comprising phase change material
02/14/2012US8115188 Memory element and display device
02/14/2012US8114468 Methods of forming a non-volatile resistive oxide memory array
02/09/2012WO2012018765A1 Natural threshold voltage distribution compaction in non-volatile memory
02/09/2012WO2012017844A1 Semiconductor device
02/09/2012WO2011140044A3 Techniques for refreshing a semiconductor memory device
02/09/2012WO2011133763A3 Retain-till-accessed (rta) power saving mode in high performance static memories
02/09/2012US20120036314 Memory devices having programmable elements with accurate operating parameters stored thereon
02/09/2012US20120033519 Temperature alert and low rate refresh for a non-volatile memory
02/09/2012US20120033513 Distributed write data drivers for burst access memories
02/09/2012US20120033490 Generating a Non-Reversible State at a Bitcell Having a First Magnetic Tunnel Junction and a Second Magnetic Tunnel Junction
02/09/2012US20120033489 Memory device, precharge controlling method thereof, and devices having the same
02/09/2012US20120033488 Semiconductor device and driving method thereof
02/09/2012US20120033487 Semiconductor device and driving method thereof
02/09/2012US20120033486 Semiconductor device and method for driving semiconductor device
02/09/2012US20120033485 Semiconductor device
02/09/2012US20120033484 Semiconductor device and driving method thereof
02/09/2012US20120033483 Semiconductor device and driving method of semiconductor device
02/09/2012US20120033482 Bit Set Modes for a Resistive Sense Memory Cell Array
02/09/2012US20120033481 Memory Element With A Reactive Metal Layer
02/09/2012US20120033480 Semiconductor memory device
02/09/2012US20120033479 Modification of logic by morphological manipulation of a semiconductor resistive element
02/09/2012US20120033478 Non-volatile memory device and sensing method for forming the same
02/09/2012DE112005001325T5 Lösch-Algorithmus für einen Multilevel-Bit-Flash-Speicher Erase algorithm for a multi-level flash memory bits
02/09/2012DE102007006713B4 Schaltungsanordnung mit vergrabenen Steuerleitungen Circuitry with buried control lines
02/09/2012DE10128964B4 Digitale magnetische Speicherzelleneinrichtung Digital magnetic memory cell device
02/09/2012CA2807392A1 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
02/08/2012EP2416326A1 Semiconductor device and driving method thereof
02/08/2012EP2416325A1 Semiconductor device
02/08/2012EP2416324A1 Semiconductor device and method for driving semiconductor device
02/08/2012EP2416323A1 Semiconductor device and driving method thereof
02/08/2012EP2416322A1 Memory with low voltage mode operation
02/08/2012EP2415052A1 Writing a multibit resistance-switching memory cell including a dummy resistance, resistance switching elements and diodes
02/08/2012EP2415051A1 Predictive pre-heating of non-volatile memory cells
02/08/2012EP2415050A1 Resistive sense memory with complementary programmable recording layers
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