G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2011
12/06/2011	US8073058 Memory device and device and method for detecting motion vector
12/06/2011	US8072833 Semiconductor memory device
12/06/2011	US8072817 Tracking cells for a memory system
12/06/2011	US8072813 Method and apparatus for programming nonvolatile memory
12/06/2011	US8072811 NAND based NMOS NOR flash memory cell, a NAND based NMOS NOR flash memory array, and a method of forming a NAND based NMOS NOR flash memory array
12/06/2011	US8072810 Program and erase methods with substrate transient hot carrier injections in a non-volatile memory
12/06/2011	US8072808 Nonvolatile semiconductor memory device
12/06/2011	US8072807 FLOTOX type EEPROM
12/06/2011	US8072806 Semiconductor memory device and method for driving semiconductor memory device
12/06/2011	US8072804 Multi-bit flash memory devices and methods of programming and erasing the same
12/06/2011	US8072801 Method for creating nonequilibrium photodetectors with single carrier species barriers
12/06/2011	US8072799 Semiconductor integrated circuit device
12/06/2011	US8072798 Semiconductor memory device
12/06/2011	US8072797 SRAM cell without dedicated access transistors
12/06/2011	US8072796 Memory with five-transistor bit cells and associated control circuit
12/06/2011	US8072795 Biploar resistive-switching memory with a single diode per memory cell
12/06/2011	US8072794 Semiconductor memory device having DRAM-compatible addressing mode and data processing system including same
12/06/2011	US8072793 High density resistance based semiconductor device
12/06/2011	US8072792 Integrated circuit with resistive memory cells and method for manufacturing same
12/06/2011	US8072791 Method of making nonvolatile memory device containing carbon or nitrogen doped diode
12/06/2011	US8072790 High speed FRAM including a deselect circuit
12/06/2011	US8072789 Resistance-change memory device
12/06/2011	US8072014 Polarity dependent switch for resistive sense memory
12/06/2011	US8071969 Semiconductor memory device and method for manufacturing same
12/01/2011	WO2011150177A1 Methods and devices to reduce outer code failure rate variability
12/01/2011	WO2011150170A2 Structures and methods for a field-reset spin-torque mram
12/01/2011	WO2011149823A1 Programming non-volatile storage with synchronized coupling
12/01/2011	WO2011149274A2 Magnetic tunnel junction device having amorphous buffer layers that are magnetically connected together and that have perpendicular magnetic anisotropy
12/01/2011	WO2011148898A1 Method for regulating voltage characteristics of semiconductor storage cell, method for regulating voltage characteristics of semiconductor storage device, charge pump, and method for regulating voltage of charge pump
12/01/2011	WO2011100138A3 Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
12/01/2011	US20110292743 Sequential access memory elements
12/01/2011	US20110292727 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
12/01/2011	US20110292723 Dram cell utilizing floating body effect and manufacturing method thereof
12/01/2011	US20110292722 Semiconductor device
12/01/2011	US20110292721 Adaptive Wordline Programming Bias of a Phase Change Memory
12/01/2011	US20110292720 Phase-change memory device
12/01/2011	US20110292719 Phase-change memory device
12/01/2011	US20110292718 Non-volatile logic circuit
12/01/2011	US20110292717 Semiconductor device
12/01/2011	US20110292716 Asymmetric Write Current Compensation Using Gate Overdrive for Resistive Sense Memory Cells
12/01/2011	US20110292715 Semiconductor memory device
12/01/2011	US20110292714 Structures and methods for a field-reset spin-torque mram
12/01/2011	US20110292713 Reading a Memory Element Within a Crossbar Array
12/01/2011	US20110292712 Reading a memory element within a crossbar array
12/01/2011	US20110292016 Liquid crystal display device with decreased power consumption
12/01/2011	DE19929725B4 Integrierte Schaltung mit einer Decodereinheit An integrated circuit comprising a decoder unit
12/01/2011	DE112007002328B4 Elektrisch betätigter Schalter und Verfahren zum Konfigurieren einer EIN/AUS-Polarität eines Schalters Electrically operated switch and method for configuring an ON / OFF switch polarity of a
12/01/2011	DE10255085B4 Synchrones Halbleiterspeicherbauelement vom Mehrbanktyp Synchronous semiconductor memory device from the multi-bank type
12/01/2011	DE102004047638B4 Nichtflüchtige Speicherzelle A non-volatile memory cell
11/2011
11/30/2011	EP2389673A1 A memory controller and a method for writing information to a k-level memory unit
11/30/2011	EP1636802B1 Tracking cells for a memory system
11/30/2011	CN1941188B 半导体存储装置的数据输入电路 Data input circuit of the semiconductor memory device
11/30/2011	CN1774767B 动态半导体存储器件 Dynamic semiconductor memory device
11/30/2011	CN102265392A 半导体存储单元及其制造方法以及半导体存储装置 The semiconductor memory cell and method for manufacturing a semiconductor memory device, and
11/30/2011	CN102265350A 包括中点基准的随机存取存储器架构 Including the midpoint of the reference architecture of a random access memory
11/30/2011	CN102263122A 非易失性存储装置 Nonvolatile memory device
11/30/2011	CN102262900A 半导体存储器件及其操作方法 The semiconductor memory device and method of operation
11/30/2011	CN101673754B 半导体器件 Semiconductor devices
11/30/2011	CN101577307B 电阻存储器的存储单元及其制作方法 Storage units and production methods of resistance memory
11/30/2011	CN101572246B 电阻存储器、含有电阻存储器的集成电路的制作方法 Production Method resistance memory, memory integrated circuits containing resistance
11/30/2011	CN101556825B 一种集成电路 An integrated circuit
11/30/2011	CN101425328B 半导体器件 Semiconductor devices
11/30/2011	CN101211652B 利用磁畴壁移动的信息存储装置和制造该装置的方法 Storage means using information magnetic domain wall movement and a method of manufacturing the apparatus
11/29/2011	USRE42976 Semiconductor memory device with reduced data access time
11/29/2011	US8068960 Control device of an adjustment apparatus of a motor vehicle
11/29/2011	US8068379 Dynamic RAM
11/29/2011	US8068367 Reference current sources
11/29/2011	US8068363 Flash memory apparatus and read operation control method therefor
11/29/2011	US8068359 Static source plane in stram
11/29/2011	US8068358 Semiconductor memory device
11/29/2011	US8068151 Digital camera with card reader for reading program script
11/29/2011	US8067792 Memory device with memory cell including MuGFET and FIN capacitor
11/29/2011	US8067250 Ferroelectric memory device and method of manufacturing the same
11/29/2011	CA2515164C Write-once optical disc, and method and apparatus for allocating spare area on write-once optical disc
11/24/2011	WO2011146364A2 Joint encoding of logical pages in multi-page memory architecture
11/24/2011	WO2011146355A1 Iterative demodulation and decoding for multi-page memory architecture
11/24/2011	WO2011145738A1 Semiconductor device and method for driving semiconductor device
11/24/2011	WO2011145274A1 Semiconductor memory unit
11/24/2011	WO2011145245A1 Semiconductor storage device
11/24/2011	WO2011068694A3 Dram sense amplifier that supports low memory-cell capacitance
11/24/2011	US20110286287 Semiconductor memory device with optimum refresh cycle according to temperature variation
11/24/2011	US20110286264 Magnetic random access memory and initializing method
11/24/2011	US20110286262 Semiconductor memory device
11/24/2011	US20110286261 Resistance change memory
11/24/2011	US20110286260 Nonvolatile memory device and method for driving same
11/24/2011	US20110286259 Reading Memory Elements Within a Crossbar Array
11/24/2011	US20110286258 Nonvolatile memory device having a transistor connected in parallel with a resistance switching device
11/24/2011	US20110286255 Magnetic Logic Circuits Formed with Tapered Magnetic Wires
11/24/2011	US20110284977 Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy
11/24/2011	DE10321452B4 Implementierung eines Temperatursensors zum Steuern von internen Chipspannungen Implementation of a temperature sensor for controlling internal chip voltages
11/24/2011	DE102006039436B4 Speicherbauelement Memory device
11/23/2011	EP2387786A1 Dynamic leakage control for memory arrays
11/23/2011	EP2150958B1 Multi-level cell access buffer with dual function
11/23/2011	EP2137734B1 Spin transfer torque magnetoresistive random access memory and design methods
11/23/2011	EP2126922B1 Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
11/23/2011	EP2022056B1 Sram leakage reduction circuit
11/23/2011	EP1751769B1 Method and system for providing seamless self-refresh for directed bank refresh in volatile memories
11/23/2011	EP1542235B1 Composite storage circuit and semiconductor device having the same composite storage circuit
11/23/2011	CN1941172B delay lock loop circuit and drive control circuit of delay lock loop
11/23/2011	CN1877738B Data line layout in semiconductor memory device and method of forming the same

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