Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2011
12/27/2011US8085606 Input-output line sense amplifier having adjustable output drive capability
12/27/2011US8085601 Programming method and initial charging method of nonvolatile memory device
12/27/2011US8085599 Memory device and method for estimating characteristics of multi-bit programming
12/27/2011US8085595 Nonvolatile memory devices and methods of controlling the wordline voltage of the same
12/27/2011US8085594 Reading technique for memory cell with electrically floating body transistor
12/27/2011US8085592 Charge-trap flash memory device with reduced erasure stress and related programming and erasing methods thereof
12/27/2011US8085590 Multi-bit-per-cell flash memory device with non-bijective mapping
12/27/2011US8085585 Semiconductor memory device
12/27/2011US8085584 Memory to store user-configurable data polarity
12/27/2011US8085583 Vertical string phase change random access memory device
12/27/2011US8085582 Magnetic recording device and magnetic recording apparatus
12/27/2011US8085581 STT-MRAM bit cell having a rectangular bottom electrode plate and improved bottom electrode plate width and interconnect metal widths
12/27/2011US8085580 System for bitcell and column testing in SRAM
12/27/2011US8085579 Semiconductor memory device
12/27/2011US8085578 Method and system for coding and read out of information in a microscopic cluster comprising coupled functional islands
12/27/2011US8085577 Nonvolatile semiconductor memory device and method of data write/data erase therein
12/27/2011US8085576 Semiconductor memory device
12/27/2011US8085575 Nonvolatile memory device and method of driving the same
12/27/2011US8085574 Nonvolatile ferroelectric memory and control device using the same
12/27/2011US8085573 Ferroelectric memory
12/27/2011US8085572 Semiconductor memory apparatus
12/27/2011US8084835 Non-uniform switching based non-volatile magnetic based memory
12/27/2011US8084768 Semiconductor device
12/27/2011US8084762 Resistive memory
12/27/2011US8083326 Nozzle arrangement with an actuator having iris vanes
12/22/2011WO2011158208A1 Magnetorelectric memory
12/22/2011US20110310683 Non-volatile memory control
12/22/2011US20110310663 Method for driving storage element and storage device
12/22/2011US20110310662 Structure and method for biasing phase change memory array for reliable writing
12/22/2011US20110310661 Memory sensing devices, methods, and systems
12/22/2011US20110310660 Magnetoresistance element and storage device using the same
12/22/2011US20110310659 Voltage-controlled oscillator and phase-locked loop circuit
12/22/2011US20110310658 Combined Memories In Integrated Circuits
12/22/2011US20110310657 Resistive memory devices including selected reference memory cells operating responsive to read operations
12/22/2011US20110310656 Memory Cell With Resistance-Switching Layers Including Breakdown Layer
12/22/2011US20110310655 Composition Of Memory Cell With Resistance-Switching Layers
12/22/2011US20110310654 Memory Cell With Resistance-Switching Layers And Lateral Arrangement
12/22/2011US20110310653 Memory Cell With Resistance-Switching Layers
12/22/2011US20110310652 Variable resistance devices, semiconductor devices including the variable resistance devices, and methods of operating the semiconductor devices
12/22/2011US20110310651 Variable Impedance Circuit Controlled by a Ferroelectric Capacitor
12/22/2011US20110310650 semiconductor memory device and a method of operating thereof
12/22/2011US20110310146 Printhead nozzle arrangement with magnetic paddle actuator
12/21/2011EP2396791A1 Apparatus and method for enhancing flash endurance by encoding data
12/21/2011CN102292776A 用于将信息写入k级存储器部件的存储器控制器和方法 K is used to write information to the memory controller level memory components and methods
12/21/2011CN102292775A 存储器的适应性擦除和软编程 Adaptability erase and soft programming memory
12/21/2011CN102292774A 存储器装置以及控制该存储器装置的存储器控制器 A memory device and controlling the memory device the memory controller
12/21/2011CN102290103A 可达到无穷次疲劳的相变存储器 Fatigue can achieve infinitely phase change memory
12/21/2011CN102290102A 一种三值绝热存储器 A three-value insulation memory
12/21/2011CN102290101A 源线偏置电路及存储器 Source line bias circuit and memory
12/21/2011CN102290100A 半导体集成电路装置 The semiconductor integrated circuit device
12/21/2011CN102290099A Sram存储器及其形成方法 Sram memory and method for forming
12/21/2011CN102290098A 电源电平升高的可编程逻辑器件存储器单元 Power level rises programmable logic device memory cell
12/21/2011CN102290097A 一种sram存储器 One kind sram memory
12/21/2011CN102290096A 静态随机存取存储器的译码和逻辑控制电路 Decode logic and static random access memory of the control circuit
12/21/2011CN102290095A 任意k值和8值dram的存储单元及写入与读出电路 Arbitrary value k value and 8 dram and written into the memory cell readout circuit
12/21/2011CN102290094A 一种可靠保持内存自刷新状态的低功耗电路 Maintain a reliable memory self-refresh state of low-power circuit
12/21/2011CN102290093A 存储元件的驱动方法和存储装置 The method of driving the storage device and the storage device
12/21/2011CN102290092A 具有提高了的面积分辨率的磁性元件 Magnetic element with improved resolution area
12/21/2011CN101635331B 电阻式存储器件及其制造方法 Resistive memory device and manufacturing method thereof
12/21/2011CN101625892B 动态随机访问存储器的控制器及用户指令处理方法 Controller and a dynamic random access memory of a user instruction processing method
12/21/2011CN101598629B 一种便携式快速大屏幕显示器的光度特性检测装置 Photometric characteristics of a portable rapid detection of large-screen display devices
12/21/2011CN101540195B 无负载的包含有四个nmos晶体管的静态随机存储器 No load includes static random access memory four nmos transistors
12/21/2011CN101465156B 信息存储装置和存储介质 Information storage means and the storage medium
12/21/2011CN101414481B 基于SiSb复合材料的相变存储器单元 SiSb composites based phase change memory cell
12/21/2011CN101373638B 控制对包括多级单元的闪存器件的回拷贝操作的方法 Control means including multi-level flash memory device back to the copy operation method
12/21/2011CN101183705B 具有固溶体层的电阻式随机存取存储器及其制造方法 Resistive random access memory and a manufacturing method having the solid solution layer
12/20/2011US8082413 Detection circuit for mixed asynchronous and synchronous memory operation
12/20/2011US8082382 Memory device with user configurable density/performance
12/20/2011US8081520 Over erase correction method of flash memory apparatus
12/20/2011US8081513 NAND flash memory
12/20/2011US8081512 Non-volatile semiconductor memory device
12/20/2011US8081511 Flash memory device with redundant columns
12/20/2011US8081510 Semiconductor integrated circuit and unstable bit detection method for the same
12/20/2011US8081509 Non-volatile memory device and method of operation therefor
12/20/2011US8081508 Flash memory device and memory system including the same
12/20/2011US8081507 Tri-state memory device and method
12/20/2011US8081506 Amorphous semiconductor threshold switch volatile memory cell
12/20/2011US8081504 Computer memory device with status register
12/20/2011US8081503 Volatile memory elements with minimized area and leakage current
12/20/2011US8081502 Memory elements with body bias control
12/20/2011US8081501 Multi-level nonvolatile memory device using variable resistive element
12/20/2011US8081500 Method for mitigating imprint in a ferroelectric memory
12/20/2011US8081499 Semiconductor integrated circuit
12/20/2011US8080816 Silver-selenide/chalcogenide glass stack for resistance variable memory
12/20/2011US8079670 Printhead having nozzles with stacked capacitive actuators
12/15/2011WO2011156525A2 Ferroelectric memories based on arrays of autonomous memory bits
12/15/2011WO2011156343A2 Non-volatile memory having 3d array of read/write elements and read/write circuits and method thereof
12/15/2011WO2011155951A1 Variable impedance circuit controlled by a ferroelectric capacitor
12/15/2011WO2011153608A1 Semiconductor memory device with sense amplifier and bitline isolation
12/15/2011US20110307649 Multiple level cell memory device with single bit per cell, re-mappable memory block
12/15/2011US20110305098 Semiconductor memory device with sense amplifier and bitline isolation
12/15/2011US20110305083 Nonvolatile memory device
12/15/2011US20110305078 Low cost multi-state magnetic memory
12/15/2011US20110305077 Memory device
12/15/2011US20110305076 Phase change memory device
12/15/2011US20110305075 Programmable Resistance Memory
12/15/2011US20110305074 Self-aligned bit line under word line memory array
12/15/2011US20110305073 Semiconductor memory device
12/15/2011US20110305072 Semiconductor memory device
12/15/2011US20110305071 Continuous programming of non-volatile memory
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