Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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01/18/2012 | CN102324248A Wire or matching circuit possessing low power consumption |
01/18/2012 | CN102324247A Method to stagger self refreshes |
01/18/2012 | CN101667588B High density resistance based semiconductor device and manufacturing method thereof |
01/18/2012 | CN101079317B Method ans system of low power balance code using data bus inversion |
01/17/2012 | US8098540 Dynamic power saving memory architecture |
01/17/2012 | US8098529 Memory device having buried boosting plate and methods of operating the same |
01/17/2012 | US8098528 Voltage generation circuit and nonvolatile memory device including the same |
01/17/2012 | US8098527 Semiconductor memory device and manufacturing method thereof |
01/17/2012 | US8098526 Reverse reading in non-volatile memory with compensation for coupling |
01/17/2012 | US8098522 Non-volatile memory and operation method thereof |
01/17/2012 | US8098521 Method of providing an erase activation energy of a memory device |
01/17/2012 | US8098520 Storage device including a memory cell having multiple memory layers |
01/17/2012 | US8098519 Semiconductor phase change memory using multiple phase change layers |
01/17/2012 | US8098518 Nonvolatile memory device using variable resistive element |
01/17/2012 | US8098517 Method of restoring variable resistance memory device |
01/17/2012 | US8098516 Static source plane in STRAM |
01/17/2012 | US8098515 Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor |
01/17/2012 | US8098514 Magnetoresistive element and magnetic memory |
01/17/2012 | US8098513 Memory array with read reference voltage cells |
01/17/2012 | US8098512 Reading phase change memories |
01/17/2012 | US8098511 Reverse set with current limit for non-volatile storage |
01/17/2012 | US8098510 Variable resistive memory punchthrough access method |
01/17/2012 | US8098507 Hierarchical cross-point array of non-volatile memory |
01/17/2012 | US8098285 Processor for image capture and printing |
01/17/2012 | US8097909 Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using the same |
01/12/2012 | WO2012006609A2 Memory devices and methods having multiple address accesses in same cycle |
01/12/2012 | WO2012006025A2 A method and apparatus for dynamic memory termination |
01/12/2012 | WO2012004882A1 Magnetic memory cell and magnetic random access memory |
01/12/2012 | WO2011115769A3 System and method for cognitive processing for data fusion |
01/12/2012 | US20120011375 Multimedia Storage Systems and Methods |
01/12/2012 | US20120009976 Recess gate transistor |
01/12/2012 | US20120008436 Simulating a refresh operation latency |
01/12/2012 | US20120008426 High speed dram architecture with uniform access latency |
01/12/2012 | US20120008411 Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
01/12/2012 | US20120008383 Magnetic device with optimized heat confinement |
01/12/2012 | US20120008382 Magnetic recording element |
01/12/2012 | US20120008381 Magnetoresistive element |
01/12/2012 | US20120008380 Method for writing in a mram-based memory device with reduced power consumption |
01/12/2012 | US20120008379 Global bit line restore by most significant bit of an address line |
01/12/2012 | US20120008378 Memory devices and methods having multiple address accesses in same cycle |
01/12/2012 | US20120008377 Static random access memory with data controlled power supply |
01/12/2012 | US20120008376 Memory with regulated ground nodes |
01/12/2012 | US20120008375 Cmos image sensor with noise cancellation |
01/12/2012 | US20120008374 Data Storage Using Read-Mask-Write Operation |
01/12/2012 | US20120008373 Capacitive discharge method for writing to non-volatile memory |
01/12/2012 | US20120008372 Resistance change memory device |
01/12/2012 | US20120008371 Semiconductor storage device |
01/12/2012 | US20120008370 Memory element and memory device |
01/12/2012 | US20120008369 Memory element and drive method for the same, and memory device |
01/12/2012 | US20120008368 Semiconductor device having single-ended sensing amplifier |
01/12/2012 | US20120008367 Resistance change type memory |
01/12/2012 | US20120008366 RESTIVE MEMORY USING SiGe MATERIAL |
01/12/2012 | US20120008365 Method for operating a nonvolatile switching device |
01/12/2012 | US20120007924 Ink ejection nozzle with thermal actuator coil |
01/12/2012 | DE19753423B4 Automatische Leistungsabsenkschaltung für Halbleiterspeichervorrichtung Automatic Leistungsabsenkschaltung for the semiconductor memory device |
01/11/2012 | EP2405504A1 Magnetic memory |
01/11/2012 | EP2405440A1 Dynamic random access memory device and method for self-refreshing memory cells with temperature compensated self-refresh |
01/11/2012 | EP2405439A1 Magnetic device with optimized heat confinement |
01/11/2012 | EP2405438A1 Method for writing in a MRAM-based memory device with reduced power consumption |
01/11/2012 | EP2404299A1 Nand flash architecture with multi-level row decoding |
01/11/2012 | EP2404298A2 Reducing source loading effect in spin torque transfer magnetoresitive random access memory (stt-mram) |
01/11/2012 | EP2404297A1 St-ram cells with perpendicular anisotropy |
01/11/2012 | EP2404296A1 A multi-state spin-torque transfer magnetic random access memory |
01/11/2012 | EP1844472B1 Magnetic memory system using mram-sensor |
01/11/2012 | EP1737055B1 Magnetoresistive element and its manufacturing method |
01/11/2012 | CN1959846B Random access memory, boosting charge pump and method of generating write driving voltage |
01/11/2012 | CN1941174B Multi-port memory device |
01/11/2012 | CN1855298B Internal voltage generator |
01/11/2012 | CN1822227B Multi-level cell memory device and associated read method |
01/11/2012 | CN102318008A Memory architecture with a current controller and reduced power requirements |
01/11/2012 | CN102318007A Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages |
01/11/2012 | CN102315383A Storage element, method for manufacturing storage element, and memory |
01/11/2012 | CN102315174A SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory containing separate-grid structure as well as manufacturing method and operating method thereof |
01/11/2012 | CN102314939A High voltage control circuit of semiconductor device |
01/11/2012 | CN102314938A Memory chip and memory device using the same |
01/11/2012 | CN102314937A Static random access memory with data controlled power supply |
01/11/2012 | CN102314936A 低电能静态随机存取存储器 A low power static random access memory |
01/11/2012 | CN102314935A Semiconductor system and device, and method for controlling refresh operation of stacked chips |
01/11/2012 | CN102314934A Storage apparatus |
01/11/2012 | CN102314927A Magnetic random access memory cell array, memory and reading/writing method thereof |
01/11/2012 | CN102314926A Memory with regulated ground nodes, array and access method thereof |
01/11/2012 | CN102314925A Semiconductor memory device and method of operating the same |
01/11/2012 | CN101887903B Phase change memory with transistor, resistor and capacitor and operating method thereof |
01/11/2012 | CN101872768B Ferroelectric dynamic random storage based on bismuth based storage materials and preparation method thereof |
01/11/2012 | CN101720507B Nonvolatile memory device containing carbon or nitrogen doped diode and method of making and operating same |
01/11/2012 | CN101483428B Reconfigurable logic circuit |
01/11/2012 | CN101364433B Sram device with a power saving module |
01/11/2012 | CN101361135B Single level cell programming in a multiple level cell non-volatile memory device |
01/11/2012 | CN101300640B Methods of implementing magnetic tunnel junction current sensors |
01/10/2012 | US8094502 Write-precompensation and variable write backoff |
01/10/2012 | US8094501 Semiconductor memory device which includes memory cell having charge accumulation layer and control gate |
01/10/2012 | US8094499 Method using a one-time programmable memory cell |
01/10/2012 | US8094497 Multi-gate bandgap engineered memory |
01/10/2012 | US8094495 Nonvolatile memory device |
01/10/2012 | US8094494 Memory and operation method therefor |
01/10/2012 | US8094493 Memory devices and methods using improved reference cell trimming algorithms for accurate read operation window control |
01/10/2012 | US8094491 Semiconductor device |
01/10/2012 | US8094490 Nonvolatile loop magnetic memory |
01/10/2012 | US8094489 Semiconductor device |
01/10/2012 | US8094488 Set algorithm for phase change memory cell |