Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2012
04/24/2012US8164656 Memory emulation in an image capture device
04/24/2012US8164130 Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
04/19/2012WO2012050633A1 Memory subsystem for counter-based and other applications
04/19/2012WO2012050007A1 Ferroelectric thin film having superlattice structure, manufacturing method thereof, ferroelectric element, and manufacturing method thereof
04/19/2012US20120094838 Systems, methods and apparatus for digital-to-analog conversion of superconducting magnetic flux signals
04/19/2012US20120092925 Vertical capacitor-less dram cell, dram array and operation of the same
04/19/2012US20120092924 Method of providing an erase activation energy of a memory device
04/19/2012US20120092923 Read distribution management for phase change memory
04/19/2012US20120092922 Semiconductor integrated circuit
04/19/2012US20120092921 Semiconductor device
04/19/2012US20120092920 Resistive Memory Element and Use Thereof
04/19/2012US20120092919 Resistive Memory Element and Use Thereof
04/19/2012US20120092918 Verification system
04/19/2012US20120092420 Fluid ejection nozzle having stacked capacitive ejector
04/19/2012US20120091429 Resistive memory
04/19/2012DE112004002852B4 Nichtflüchtiger Halbleiterspeicher, Halbleitervorrichtung, Ladungspumpenschaltung und Pump-Verfahren A non-volatile semiconductor memory, semiconductor device, the charge pump circuit and pumping process
04/18/2012EP2442309A2 Power management for memory circuit system
04/18/2012EP2441100A1 Magnetic tunnel junction device and fabrication
04/18/2012CN1595527B Unified multilevel cell memory
04/18/2012CN102422421A Magnetic tunnel junction device and fabrication
04/18/2012CN102422360A 校准存储器系统中的写平整的起始值的方法 Calibration memory system to write the initial value of the method of formation of the
04/18/2012CN102422359A 通过动态随机存储器体现静态随机存储器输出特性的装置及方法 Apparatus and method reflects the output characteristics of static random access memory through the dynamic random access memory
04/18/2012CN102422358A Predictive pre-heating of non-volatile memory cells
04/18/2012CN102422357A Volatile memory elements with soft error upset immunity
04/18/2012CN102420011A 集成电路及其操作方法，存储器，无线装置及设备 IC and its method of operation, storage, wireless devices and equipment
04/18/2012CN102074329B 一种磁性多层膜及其磁逻辑元件和磁性随机存取存储器 A magnetic multilayers and magnetic logic elements and magnetic random access memory
04/18/2012CN101834272B 基于（Bi<sub>2</sub>O<sub>3</sub>）<sub>1-x</sub>（Y<sub>2</sub>O<sub>3</sub>）<sub>x</sub>固体电解质薄膜的非挥发记忆元件及其制备方法 Based on (Bi <sub> 2 </ sub> O <sub> 3 </ sub>) <sub> 1-x </ sub> (Y <sub> 2 </ sub> O <sub> 3 </ sub> ) non-volatile memory element and its preparation method <sub> x </ sub> solid electrolyte film
04/18/2012CN101593553B 控制静态随机存取存储器预先充电行为的控制装置及方法 Control device and method for controlling a static random access memory of the pre-charging behavior
04/18/2012CN101430922B 在存储器操作期间控制单元电压的存储器电路与方法 A memory circuit and method during operation of the control cell voltage of the memory
04/18/2012CN101312070B 降低静态随机访问存储器阵列功率的装置和方法 Reducing power static random access memory array devices and methods
04/18/2012CN101273456B 形状记忆装置 Shape memory device
04/18/2012CN101091221B 引导式自动刷新同步 Directed auto-refresh synchronization
04/18/2012CN101026001B 利用磁畴运动的磁存储器 Magnetic memory using the magnetic domain motion
04/17/2012US8159881 Reference voltage optimization for flash memory
04/17/2012US8159877 Method of directly reading output voltage to determine data stored in a non-volatile memory cell
04/17/2012US8159873 Semiconductor integrated circuit
04/17/2012US8159872 Magnetic random access memory
04/17/2012US8159871 Magnetoresistive memory cell using floating body effect, memory device having the same, and method of operating the memory device
04/17/2012US8159870 Array structural design of magnetoresistive random access memory (MRAM) bit cells
04/17/2012US8159869 Circuit and method for generating reference voltage, phase change random access memory apparatus and read method using the same
04/17/2012US8159868 Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
04/17/2012US8159867 Phase change memory devices and systems, and related programming methods
04/17/2012US8159866 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
04/17/2012US8159865 Information storage element and method of writing/reading information into/from information storage element
04/17/2012US8159864 Data integrity preservation in spin transfer torque magnetoresistive random access memory
04/17/2012US8159863 6T SRAM cell with single sided write
04/17/2012US8159862 Recycling charges
04/17/2012US8159861 Compact and highly efficient DRAM cell
04/17/2012US8159860 Semiconductor memory device having a discharge path generator for global I/O lines
04/17/2012US8159859 Semiconductor storage device
04/17/2012US8159858 Signal margin improvement for read operations in a cross-point memory array
04/17/2012US8159857 Electronic device with a programmable resistive element and a method for blocking a device
04/17/2012US8159856 Bipolar select device for resistive sense memory
04/17/2012US8159855 Switchable element
04/17/2012US8159804 System and method for limiting energy in an industrial control system
04/17/2012US8159440 Controller driver and display apparatus using the same
04/17/2012US8158190 Low magnetization materials for high performance magnetic memory devices
04/12/2012WO2011156525A3 Ferroelectric memories based on arrays of autonomous memory bits
04/12/2012US20120089773 Dynamic random access memory unit and data refreshing method thereof
04/12/2012US20120087186 Multi-bit memory with selectable magnetic layer
04/12/2012US20120087185 Magnetic latch magnetic random access memory (mram)
04/12/2012US20120087184 Magnetic Random Access Memory (MRAM) Layout with Uniform Pattern
04/12/2012US20120087183 Methods of operating prams using initial programmed resistances and prams using the same
04/12/2012US20120087182 Phase-change memory with multiple polarity bits having enhanced endurance and error tolerance
04/12/2012US20120087181 Cross-Point Self-Aligned Reduced Cell Size Phase Change Memory
04/12/2012US20120087180 Semiconductor integrated circuit for low and high voltage operations
04/12/2012US20120087179 Magneto-resistance element and semiconductor memory device including the same
04/12/2012US20120087178 Semiconductor memory device
04/12/2012US20120087177 Semiconductor memory device for data sensing
04/12/2012US20120087176 Data security for dynamic random access memory using body bias to clear data at power-up
04/12/2012US20120087175 Asymmetric Write Current Compensation
04/12/2012US20120087174 Two Terminal Re Writeable Non Volatile Ion Transport Memory Device
04/12/2012US20120087173 Memory element, stacking, memory matrix and method for operation
04/12/2012US20120087172 Semiconductor memory and system
04/12/2012US20120087171 Semiconductor memory device including variable resistance elements and manufacturing method thereof
04/12/2012US20120087169 Circuit for concurrent read operation and method therefor
04/12/2012US20120087168 Memory device including variable resistance elements
04/12/2012US20120086756 Nozzle arrangement with an actuator having iris vanes
04/11/2012EP2439744A2 Variability resilient sense amplifier with reduced energy consumption
04/11/2012EP2438595A1 Folding data stored in binary format into multi-state format within non-volatile memory devices
04/11/2012EP2438594A1 Memory device having integral instruction buffer
04/11/2012EP2127081B1 Clock mode determination in a memory system
04/11/2012CN1819057B Dynamic random access memory with public pre-charger
04/11/2012CN102414756A Magnetic stack having an assisting layer
04/11/2012CN102412257A Semiconductor memory device and manufacturing method of the same
04/11/2012CN102411984A Memory cells having a row-based read and/or write support circuitry
04/11/2012CN102411983A 依据数据动态供电的随机存取存储器 Dynamic power depending on the data random access memory
04/11/2012CN101385088B 多电平单元非易失性存储器装置中的单锁存器数据电路 A non-volatile multi-level cell memory device in the single data latch circuit
04/11/2012CN101288169B 使用包含可切换半导体存储器元件的存储器单元的方法 The method can be switched using a memory cell comprising a semiconductor memory element
04/11/2012CN101199022B 补偿非易失性存储设备中浮动栅极之间耦合的方法及系统 Compensation for the non-volatile memory device method and system for coupling between the floating gate
04/11/2012CN101030447B 半导体存储器件 The semiconductor memory device
04/10/2012US8154935 Delaying a signal communicated from a system to at least one of a plurality of memory circuits
04/10/2012US8154932 Increasing efficiency of memory accesses by selectively introducing a relative delay between the time that write addresses are provided to the memory and the time that write data is provided to the memory
04/10/2012US8154930 Semiconductor memory device which stores plural data in a cell
04/10/2012US8154929 Flash memory device controlling common source line voltage, program-verify method, and memory system
04/10/2012US8154927 Nonvolatile memory device and nonvolatile memory system employing same
04/10/2012US8154924 Nonvolatile memory device and read method
04/10/2012US8154923 Non-volatile memory and method with power-saving read and program-verify operations
04/10/2012US8154922 Semiconductor memory device
04/10/2012US8154918 Method for page- and block based scrambling in non-volatile memory
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