Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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04/10/2012 | US8154917 Magnetic storage device |
04/10/2012 | US8154916 Nonvolatile memory circuit using spin MOS transistors |
04/10/2012 | US8154915 Magnetoresistive element and magnetoresistive random access memory including the same |
04/10/2012 | US8154914 Predictive thermal preconditioning and timing control for non-volatile memory cells |
04/10/2012 | US8154913 Magnetoresistance effect element and magnetic random access memory |
04/10/2012 | US8154912 Volatile memory elements with soft error upset immunity |
04/10/2012 | US8154911 Memory device and method of writing data to a memory device |
04/10/2012 | US8154910 Full CMOS SRAM |
04/10/2012 | US8154909 Resistance variable memory apparatus |
04/10/2012 | US8154908 Nonvolatile semiconductor storage device and data writing method therefor |
04/10/2012 | US8154907 Method for fabricating indium (In)-antimony (Sb)-tellurium (Te) nanowires and phase-change memory device comprising the nanowires |
04/10/2012 | US8154906 Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
04/10/2012 | US8154905 Semiconductor memory device having a resistive memory element |
04/10/2012 | US8154904 Programming reversible resistance switching elements |
04/10/2012 | US8154903 Split path sensing circuit |
04/10/2012 | US8154902 Bit line decoder architecture for NOR-type memory array |
04/10/2012 | US8154004 Hybrid MRAM array structure and operation |
04/05/2012 | WO2012045065A1 Sense amplifier with selectively powered inverter |
04/05/2012 | WO2012044711A1 Multi-step channel boosting to reduce channel-to-floating gate coupling in memory |
04/05/2012 | WO2012044640A1 Resistance-based memory having two-diode access device |
04/05/2012 | WO2012044635A2 Sensing for nand memory based on word line position |
04/05/2012 | WO2012044413A1 Techniques for the fast settling of word lines in nand flash memory |
04/05/2012 | WO2012042723A1 Semiconductor memory device |
04/05/2012 | WO2012042178A1 Magnetic device having heat-assisted writing |
04/05/2012 | US20120081956 Semiconductor phast change memory using multiple phase change layers |
04/05/2012 | US20120081955 Phase change random access memory device |
04/05/2012 | US20120081954 Phase change memory apparatus having row control cell |
04/05/2012 | US20120081953 Semiconductor memory apparatus |
04/05/2012 | US20120081952 Semiconductor storage device |
04/05/2012 | US20120081951 Non-volatile memory with stray magnetic field compensation |
04/05/2012 | US20120081950 Structures and methods for a field-reset spin-torque mram |
04/05/2012 | US20120081949 Active Bit Line Droop for Read Assist |
04/05/2012 | US20120081948 Semiconductor memory device and driving method thereof |
04/05/2012 | US20120081947 Metal-insulator-metal-insulator-metal (mimim) memory device |
04/05/2012 | US20120081946 Nonvolatile semiconductor memory device |
04/05/2012 | US20120081945 Memory array with graded resistance lines |
04/05/2012 | US20120081944 Crossbar array memory elements and related read methods |
04/05/2012 | US20120081943 Polarization-Coupled Ferroelectric Unipolar Junction Memory And Energy Storage Device |
04/05/2012 | DE102004043264B4 Magnet-Speichervorrichtungen mit wahlfreiem Zugriff, die wärmeerzeugende Schichten enthalten und darauf bezogene Verfahren zum Programmieren Magnetic random access memory devices which contain heat-generating layers and related method for programming |
04/04/2012 | EP2437267A2 Device and method for achieving sram output characteristics from drams |
04/04/2012 | EP2437266A1 Read-assistance circuit for a memory device |
04/04/2012 | EP2437247A1 Display |
04/04/2012 | EP2436035A1 Magnetic memory device with spin polarisation, and method for using same |
04/04/2012 | EP2436011A2 Memory element, stacking, memory matrix and method for operation |
04/04/2012 | EP2436010A1 Spin transfer torque - magnetic tunnel junction device and method of operation |
04/04/2012 | EP2436009A1 Disturbance-free reading of smt mram reference cell pair |
04/04/2012 | CN1988038B 半导体存储装置 The semiconductor memory device |
04/04/2012 | CN1983445B 包括浮体晶体管无电容器存储单元的存储器件及相关方法 No floating body transistor includes a capacitor storage cell memory devices and related methods |
04/04/2012 | CN102403448A Memory element and memory |
04/04/2012 | CN102403033A Apparatus and method for realizing rapid SRAM read-write controlling by using FPGA |
04/04/2012 | CN102403032A Memory macro configuration and method |
04/04/2012 | CN102403031A 存储元件和存储装置 Memory element and the memory device |
04/04/2012 | CN102403030A 存储元件和存储装置 Memory element and the memory device |
04/04/2012 | CN102403029A Memory element and memory device |
04/04/2012 | CN102403028A 存储元件和存储装置 Memory element and the memory device |
04/04/2012 | CN102403027A 存储元件和存储装置 Memory element and the memory device |
04/04/2012 | CN102403026A Memory element and memory device |
04/04/2012 | CN102403025A Memory element and memory device |
04/04/2012 | CN102403024A 存储元件和存储装置 Memory element and the memory device |
04/04/2012 | CN101552035B 存储器系统 Memory system |
04/04/2012 | CN101399079B 半导体存储器件及其驱动方法 Semiconductor memory device and driving method |
04/04/2012 | CN101281494B 使用动态随机存取存储器和闪存的系统和方法 System and method for using dynamic random access memory and flash memory |
04/04/2012 | CN101188141B 包括刷新操作的电阻式存储器及其刷新方法 Including resistive memory refresh operation and refresh method |
04/03/2012 | US8151044 Concurrent memory bank access and refresh retirement |
04/03/2012 | US8151030 Method of increasing DDR memory bandwidth in DDR SDRAM modules |
04/03/2012 | US8149645 Synchronous global controller for enhanced pipelining |
04/03/2012 | US8149631 Non-volatile semiconductor storage device |
04/03/2012 | US8149628 Operating method of non-volatile memory device |
04/03/2012 | US8149621 Flash memory device and method of testing the flash memory device |
04/03/2012 | US8149617 Data storage medium and method for accessing digital data therein |
04/03/2012 | US8149616 Method for multilevel programming of phase change memory cells using adaptive reset pulses |
04/03/2012 | US8149615 Magnetic random access memory |
04/03/2012 | US8149614 Magnetoresistive random access memory element and fabrication method thereof |
04/03/2012 | US8149613 Resistance variable memory device |
04/03/2012 | US8149612 Memory array and method of implementing a memory array |
04/03/2012 | US8149611 Nonvolatile semiconductor memory device |
04/03/2012 | US8149610 Nonvolatile memory device |
04/03/2012 | US8149609 Nonvolatile semiconductor memory device |
04/03/2012 | US8149608 Multi-level phase change random access memory device |
04/03/2012 | US8149018 Sense amplifier and electronic apparatus using the same |
03/29/2012 | WO2012040730A1 Reduced current requirements for dram self-refresh modes |
03/29/2012 | WO2012040685A2 Fast exit from dram self-refresh |
03/29/2012 | WO2012039774A1 Replaceable, precise-tracking reference lines for memory products |
03/29/2012 | WO2011156343A3 Non-volatile memory having 3d array of read/write elements and read/write circuits and method thereof |
03/29/2012 | WO2011153451A3 Tfet based 4t memory devices |
03/29/2012 | US20120075947 Semiconductor Memory Devices Having Self-Refresh Capability |
03/29/2012 | US20120075928 Semiconductor memory device |
03/29/2012 | US20120075927 Magnetic Element Having Perpendicular Anisotropy With Enhanced Efficiency |
03/29/2012 | US20120075926 Semiconductor device |
03/29/2012 | US20120075925 PCRAM With Current Flowing Laterally Relative to Axis Defined By Electrodes |
03/29/2012 | US20120075924 Method, apparatus and system to determine access information for a phase change memory |
03/29/2012 | US20120075923 Phase change memory state determination using threshold edge detection |
03/29/2012 | US20120075922 Magnetic memory element and storage device using the same |
03/29/2012 | US20120075921 Semiconductor device |
03/29/2012 | US20120075920 Memory base cell and memory bank |
03/29/2012 | US20120075919 Methods and Systems for Adjusting Wordline Up-Level Voltage to Improve Production Yield Relative to SRAM-Cell Stability |
03/29/2012 | US20120075918 SRAM Having Wordline Up-Level Voltage Adjustable to Assist Bitcell Stability and Design Structure for Same |
03/29/2012 | US20120075917 Semiconductor memory device and method for driving the same |
03/29/2012 | US20120075916 Nonvolatile semiconductor memory device |
03/29/2012 | US20120075915 Semiconductor storage device |