| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
|---|
| 01/10/2012 | US8094487 Method for read-out of information in magnetic recording element and method for read-out of information in magnetic random access memory |
| 01/10/2012 | US8094486 Pad design with buffers for STT-MRAM or other short pulse signal transmission |
| 01/10/2012 | US8094485 Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect |
| 01/10/2012 | US8094484 Memory cell array |
| 01/10/2012 | US8094483 Semiconductor device including bit line groups |
| 01/10/2012 | US8094482 Nonvolatile memory apparatus and nonvolatile data storage medium |
| 01/10/2012 | US8094481 Resistance variable memory apparatus |
| 01/10/2012 | US8094480 Semiconductor device |
| 01/10/2012 | US8094479 Semiconductor memory device |
| 01/10/2012 | US8093681 Semiconductor integrated circuit device and process for manufacturing the same |
| 01/05/2012 | WO2012002186A1 Semiconductor device |
| 01/05/2012 | WO2012002156A1 Magnetic memory element, magnetic memory |
| 01/05/2012 | WO2012001555A1 Magnetic random access memory device and method for producing a magnetic random access memory device |
| 01/05/2012 | US20120005437 Memory Controller for Controlling Write Signaling |
| 01/05/2012 | US20120005421 Memory controller and data processing system |
| 01/05/2012 | US20120002483 Non-Volatile Memory And Method With Reduced Neighboring Field Errors |
| 01/05/2012 | US20120002467 Single transistor memory cell |
| 01/05/2012 | US20120002466 Storage apparatus |
| 01/05/2012 | US20120002465 Methods, structures, and devices for reducing operational energy in phase change memory |
| 01/05/2012 | US20120002464 Semiconductor device equipped with a plurality of memory banks and test method of the semiconductor device |
| 01/05/2012 | US20120002463 high capacity low cost multi-state magnetic memory |
| 01/05/2012 | US20120002462 Resistance-change semiconductor memory |
| 01/05/2012 | US20120002461 Non-volatile memory with ovonic threshold switch and resistive memory element |
| 01/05/2012 | US20120002460 Dynamically configurable sram cell for low voltage operation |
| 01/05/2012 | US20120002459 5t sram memory for low voltage applications |
| 01/05/2012 | US20120002458 Resistance change memory device |
| 01/05/2012 | US20120002457 Semiconductor memory device and control method of the same |
| 01/05/2012 | CA2785625A1 Magnetic random access memory device and method for producing a magnetic random access memory device |
| 01/04/2012 | EP2140455B1 Magnetic memory with magnetic tunnel junction |
| 01/04/2012 | EP1620858B1 Component with a logic circuit arrangement with configurable functionality |
| 01/04/2012 | EP1526588B1 Magnetoresistance effect element and magnetic memory unit |
| 01/04/2012 | CN1832034B Method and circuit for generating high voltage and semiconductor memory device having the same |
| 01/04/2012 | CN102306705A Multi-valued resistance random access memory with high capacity |
| 01/04/2012 | CN102306501A Programming defferently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory |
| 01/04/2012 | CN101635168B Array capacity and density reinforced circuit of sub-threshold storage unit |
| 01/04/2012 | CN101587743B Power-failure transient memory used for passive radio-frequency identification labeled chip |
| 01/04/2012 | CN101546194B Interface device, interface control method and memory system |
| 01/04/2012 | CN101405811B Flash memory with coding and signal processing |
| 01/04/2012 | CN101169969B Signal amplifier of deep submicron dynamic memory |
| 01/04/2012 | CN101145600B Storage element and storage device using the same |
| 01/04/2012 | CN101093723B Memory cell programmed using a temperature controlled set pulse |
| 01/03/2012 | US8089816 Memory erase methods and devices |
| 01/03/2012 | US8089812 Semiconductor memory device |
| 01/03/2012 | US8089811 Flash memory devices with memory cells strings including dummy transistors with selective threshold voltages |
| 01/03/2012 | US8089810 Semiconductor integrated circuit device for driving liquid crystal display |
| 01/03/2012 | US8089807 Method and system for data storage |
| 01/03/2012 | US8089805 Two-part programming methods and memories |
| 01/03/2012 | US8089804 Non-volatile semiconductor memory device using weak cells as reading identifier |
| 01/03/2012 | US8089803 Magnetic random access memory and operating method of the same |
| 01/03/2012 | US8089802 Memory device and memory |
| 01/03/2012 | US8089801 Semiconductor memory device and method of forming the same |
| 01/03/2012 | US8089800 Memory cell |
| 01/03/2012 | US8089799 Semiconductor device and driving method of the same |
| 01/03/2012 | US8089132 Magnetic memory with phonon glass electron crystal material |
| 01/03/2012 | US8089059 Programmable resistance memory element |
| 12/29/2011 | WO2011162147A1 Semiconductor device |
| 12/29/2011 | WO2011161798A1 Semiconductor storage device and method for controlling semiconductor storage device |
| 12/29/2011 | WO2011161622A1 Optimized flash memory without dedicated parity area and with reduced array size |
| 12/29/2011 | US20110318911 Nonvolatile memory cell comprising a reduced height vertical diode |
| 12/29/2011 | US20110318853 Method for forming nozzle chamber of inkjet printhead |
| 12/29/2011 | US20110317502 Control of inputs to a memory device |
| 12/29/2011 | US20110317486 Methods for Operating a Semiconductor Device |
| 12/29/2011 | US20110317485 Structure and method for sram cell circuit |
| 12/29/2011 | US20110317484 Resistive memory devices using assymetrical bitline charging and discharging |
| 12/29/2011 | US20110317483 Data Programming Circuits and Memory Programming Methods |
| 12/29/2011 | US20110317482 Phase change memory word line driver |
| 12/29/2011 | US20110317481 Planar phase-change memory cell with parallel electrical paths |
| 12/29/2011 | US20110317480 Phase change memory coding |
| 12/29/2011 | US20110317479 Shared bit line SMT MRAM array with shunting transistors between the bit lines |
| 12/29/2011 | US20110317478 Method and Circuit Arrangement for Performing a Write Through Operation, and SRAM Array With Write Through Capability |
| 12/29/2011 | US20110317477 Cell structure for dual-port sram |
| 12/29/2011 | US20110317476 Bit-by-Bit Write Assist for Solid-State Memory |
| 12/29/2011 | US20110317475 Electronic device |
| 12/29/2011 | US20110317474 Semiconductor device |
| 12/29/2011 | US20110317473 System and method for mitigating reverse bias leakage |
| 12/29/2011 | US20110317472 Nonvolatile semiconductor memory device |
| 12/29/2011 | US20110317471 Nonvolatile stacked nand memory |
| 12/29/2011 | US20110317470 Rectification element and method for resistive switching for non volatile memory device |
| 12/29/2011 | US20110317469 Non-volatile sampler |
| 12/28/2011 | EP2400498A1 Methods for operating a semiconductor device |
| 12/28/2011 | EP2400497A2 Control circuit and electronic device using the same |
| 12/28/2011 | EP2399261A1 Memory architecture with a current controller and reduced power requirements |
| 12/28/2011 | EP2399260A1 Dynamic random access memory (dram) refresh |
| 12/28/2011 | EP2399259A1 Spin-transfer torque memory self-reference read method |
| 12/28/2011 | CN1728278B 半导体装置的操作方法以及该半导体装置 Operating method of a semiconductor device and semiconductor device |
| 12/28/2011 | CN102301424A 具有负电压写入辅助电路的存储器及其方法 Auxiliary circuits having a negative voltage writing memory and method |
| 12/28/2011 | CN102299256A 磁电随机存储单元及具有其的磁电随机存储器 Magnetic random access memory unit, and having the same magnetic random access memory |
| 12/28/2011 | CN102298968A 双分离栅快闪存储器阵列的列译码电路 Double separation column decode circuit gate flash memory array |
| 12/28/2011 | CN102298967A 双分离栅快闪存储器阵列的行译码电路及其驱动方法 Row decoder circuit and method of driving the double split gate flash memory array |
| 12/28/2011 | CN102298964A 存储器结构单元的操作方法、数据读取方法及集成电路 Method of operation of a memory cell structure, the data reading method, and IC |
| 12/28/2011 | CN102298963A 双端口静态随机存取存储器的单元结构 Cell structure dual port static random access memory |
| 12/28/2011 | CN102298962A 一种复合自由层stt-ram存储单元 A composite free layer stt-ram storage unit |
| 12/28/2011 | CN102298961A 存储装置 Storage device |
| 12/28/2011 | CN101894854B 具有垂直信道存取晶体管及存储器平面的相变化存储单元 Phase change channel access transistor having a vertical plane of the storage unit and the memory |
| 12/28/2011 | CN101783356B 半导体存储器结构 Semiconductor memory arrangement |
| 12/28/2011 | CN101635170B 电流灵敏放大器 Current sense amplifier |
| 12/28/2011 | CN101504968B 相变化存储装置及其制造方法 Phase change memory device and manufacturing method thereof |
| 12/28/2011 | CN101477832B 固态硬盘及其识别方法、及监控方法、监控系统 SSDs and identification methods, and monitoring methods, monitoring systems |
| 12/28/2011 | CN101465158B 半导体存储器、存储器系统和存储器访问控制方法 A semiconductor memory, a memory system and a memory access control method |
| 12/28/2011 | CN101436643B 一种包含热保护底电极的相变化存储单元及其制作方法 A phase change memory cell and method of making the bottom electrode contains thermal protection |