Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2012
06/12/2012US8199558 Apparatus for variable resistive memory punchthrough access method
06/12/2012US8199557 Nonvolatile semiconductor memory device and method of resetting the same
06/12/2012US8199556 Methods of reading and using memory cells
06/12/2012US8199555 Nonvolatile logic circuit and a method for operating the same as an exclusive-OR (XOR) circuit
06/12/2012US8199554 Ferro-electric random access memory apparatus
06/12/2012US8199553 Multilevel frequency addressable field driven MRAM
06/12/2012US8199550 Magnetic memory device
06/12/2012US8199549 Semiconductor device
06/12/2012US8199309 Active matrix subtrate and liquid crystal display device with the same
06/12/2012US8198692 Spin torque magnetic integrated circuits and devices therefor
06/12/2012US8198691 Semiconductor device having memory element with stress insulating film
06/07/2012WO2012074790A1 Static random access memory (sram) write assist circuit with leakage suppression and level control
06/07/2012WO2012074776A2 Analog memories utilizing ferroelectric capacitors
06/07/2012WO2012074724A1 Memory refresh method and devices
06/07/2012WO2012036734A3 Spin torque transfer memory cell structures and methods
06/07/2012WO2012036733A3 Spin torque transfer memory cell structures and methods
06/07/2012US20120144131 Semiconductor memory asynchronous pipeline
06/07/2012US20120140555 Multilevel phase change memory operation
06/07/2012US20120140554 Compact low-power asynchronous resistor-based memory read operation and circuit
06/07/2012US20120140553 Reversible low-energy data storage in phase change memory
06/07/2012US20120140552 Write assist static random access memory cell
06/07/2012US20120140551 Static random access memory (sram) write assist circuit with leakage suppression and level control
06/07/2012US20120140550 Integrated circuit, method for driving the same, and semiconductor device
06/07/2012US20120140549 Nonvolatile semiconductor memory device
06/07/2012US20120140548 Semiconductor memory device
06/07/2012US20120140547 Multi-Bit Resistance-Switching Memory Cell
06/07/2012US20120140546 Multi-Bit Resistance-Switching Memory Cell
06/07/2012US20120140545 Semiconductor device and method of sensing data of the semiconductor device
06/07/2012US20120140544 Semiconductor memory apparatus and method of driving the same
06/07/2012US20120140127 Optical memory device based on dhlfc material and method of preparing the same
06/07/2012US20120139004 High-performance one-transistor memory cell
06/06/2012EP2461327A1 Sub-threshold memory cell circuit with high density and high robustness
06/06/2012EP2459994A2 Assay information management methods and devices
06/06/2012EP2118894B1 An improved high capacity low cost multi-state magnetic memory
06/06/2012EP1543527B1 Non-volatile memory and method of programming with reduced neighbouring field errors
06/06/2012DE19655034B4 Testvorrichtung einer Halbleitereinrichtung The test device of a semiconductor device
06/06/2012DE19655033B4 Halbleitereinrichtung Semiconductor device
06/06/2012DE19609441B4 Zum gleichzeitigen Bestimmen eines Vielbittestmodus und eines speziellen Testmodus befähigte Halbleiterspeichereinrichtung For simultaneously determining a Vielbittestmodus and a special test mode enabled semiconductor memory device
06/06/2012DE10341556B4 Niedrigleistungsmodusindikator Low power mode indicator
06/06/2012DE102006004851B4 Integrierter Halbleiterspeicher mit Erzeugung von Spannungen Integrated semiconductor memory with generating voltages
06/06/2012DE102005030545B4 Halbleiterspeicherbauelement mit Datenleitungspaaren The semiconductor memory device with data line pairs
06/06/2012CN1929026B Memory integrated circuit and memory array
06/06/2012CN102487123A Nanoscale non-volatile resistive random access memory unit and preparation method thereof
06/06/2012CN102487122A Non-volatile resistance transformation memory and preparation method thereof
06/06/2012CN102486932A Write assist circuitry
06/06/2012CN101432818B Dynamic random access memory with fully independent partial array refresh function
06/06/2012CN101238522B Apparatus for varying the programming duration and/or voltage of an electrically floating body transistor
06/05/2012US8194486 Semiconductor memory devices having bit lines
06/05/2012US8194465 Non-volatile semiconductor storage device
06/05/2012US8194464 Page buffer of nonvolatile memory device and method of performing program verification operation using the same
06/05/2012US8194463 Flash memory device and programming method thereof
06/05/2012US8194459 Random telegraph signal noise reduction scheme for semiconductor memories
06/05/2012US8194458 Programming and/or erasing a memory device in response to its program and/or erase history
06/05/2012US8194457 Soft program method and computer readable medium thereof
06/05/2012US8194454 Interleaved memory program and verify method, device and system
06/05/2012US8194452 Nonvolatile memory systems with embedded fast read and write memories
06/05/2012US8194444 Spin-transfer torque memory self-reference read method
06/05/2012US8194443 Memory device and memory
06/05/2012US8194442 Apparatus and systems using phase change memories
06/05/2012US8194441 Phase change memory state determination using threshold edge detection
06/05/2012US8194440 Phase change memory device having multiple reset signals and operating method thereof
06/05/2012US8194439 Magnetic random access memories and methods of operating the same
06/05/2012US8194438 nvSRAM having variable magnetic resistors
06/05/2012US8194437 Computer memory device with multiple interfaces
06/05/2012US8194436 Magnetic random access memory, write method therefor, and magnetoresistance effect element
06/05/2012US8194435 Memory Device
06/05/2012US8194434 Resistance change memory device
06/05/2012US8194433 Method and apparatus for accessing a bidirectional memory
06/05/2012US8194432 Ferroelectric memory device for adjusting the capacitor of a bit line
06/05/2012US8193047 Semiconductor device having sufficient process margin and method of forming same
05/2012
05/31/2012WO2012070238A1 Nonvolatile memory element, production method therefor, nonvolatile memory unit, and design assistance method for nonvolatile memory element
05/31/2012WO2012069862A1 Dynamically configurable embedded flash memory for electronic devices
05/31/2012WO2012069719A2 Electronic memory
05/31/2012WO2012068664A1 Method and apparatus for sharing internal power supplies in integrated circuit devices
05/31/2012WO2012044635A3 Sensing for nand memory based on word line position
05/31/2012WO2012018918A3 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
05/31/2012US20120134224 Verifying multi-cycle self refresh operation of semiconductor memory device and testing the same
05/31/2012US20120134206 Multilevel memory device
05/31/2012US20120134205 Operating method for memory unit
05/31/2012US20120134204 Concentric phase change memory element
05/31/2012US20120134203 Semiconductor Device and Data Processing System
05/31/2012US20120134202 Verify or read pulse for phase change memory and switch
05/31/2012US20120134201 Magnetic memory element and driving method for same
05/31/2012US20120134200 Magnetic Memory Cell With Multi-Level Cell (MLC) Data Storage Capability
05/31/2012US20120134199 Magnetic Switching Cells and Methods of Making and Operating Same
05/31/2012US20120134198 Memory system
05/31/2012US20120134197 Memory cell and memory device using the same
05/31/2012US20120134196 Analog memories utilizing ferroelectric capacitors
05/31/2012US20120134084 Memory Modules and Devices Supporting Configurable Core Organizations
05/31/2012US20120133437 Sense amplifier and electronic apparatus using the same
05/31/2012DE102011087354A1 Halbleiterspeicherelement, Verfahren zum Verifizieren einer Multizyklusselbstauffrischungsoperationeines Haibleiterspeicherelements undTestsystem A semiconductor memory element, multi-cycle method of verifying a self-refresh operation of a Haibleiterspeicherelements undTestsystem
05/30/2012EP2458592A2 Multiple pass write sequence for non-volatile storage
05/30/2012EP2345036B1 Optimizing sram performance over extended voltage or process range using self-timed calibration of local clock generator
05/30/2012EP2122631B1 High speed otp sensing scheme
05/30/2012EP1543521B1 Non-volatile memory and method with reduced bit line crosstalk errors
05/30/2012CN1996493B Phase-change memory device
05/30/2012CN1981344B Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
05/30/2012CN1905229B Magnetoresistive device and nonvolatile magnetic memory equipped with the same
05/30/2012CN1832036B Memory output stage circuit and method of memory data output
05/30/2012CN1811988B Storage unit array offset method and semiconductor storage device
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