Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2012
06/28/2012US20120163071 Signal processing circuit
06/28/2012US20120163070 Magnetoresistive element and magnetic memory
06/28/2012US20120163069 Memristor Device with Resistance Adjustable by Moving a Magnetic Wall by Spin Transfer and Use of Said Memristor in a Neural Network
06/28/2012US20120163068 10T SRAM Cell with Near Dual Port Functionality
06/28/2012US20120163067 Volatile memory elements with soft error upset immunity
06/28/2012US20120163066 Semiconductor storage device
06/28/2012US20120163065 Spatial Correlation of Reference Cells in Resistive Memory Array
06/28/2012US20120162815 System and method for manipulating domain pinning and reversal in ferromagnetic materials
06/28/2012US20120161262 Magnetic tunnel junction device
06/27/2012EP2469713A2 Software programmable logic using spin transfer torque magnetoresistive devices
06/27/2012EP2469541A1 Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor device
06/27/2012EP2469540A2 Folding data stored in binary format into multi-state format within non-volatile memory devices
06/27/2012EP2469539A1 Analog sensing of memory cells in a solid-state memory device
06/27/2012EP2467854A1 Selective memory cell program and erase
06/27/2012EP2467853A1 Gate drive voltage boost schemes for memory array ii
06/27/2012EP1301927B1 Method and apparatus for synchronization of row and column access operations
06/27/2012CN1993765B Apparatus and method for improving dynamic refresh in a semiconductor memory device by temperature measurement
06/27/2012CN1941198B Internal signal generator for use in semiconductor memory device
06/27/2012CN102522498A Magnetic memory device and method of manufacturing the same
06/27/2012CN102522374A Method for manufacturing a phase change memory device with pillar bottom electrode
06/27/2012CN102522115A Circuit for improving process robustness of sub-threshold static random access memory (SRAM) storage cell
06/27/2012CN102522114A Register having irradiation-resistant function
06/27/2012CN102522113A SDRAM bridge circuit
06/27/2012CN101866686B Semiconductor integrated circuite device
06/27/2012CN101807595B Three-dimensional semiconductor structure and method of fabricating the same
06/27/2012CN101714405B High-robustness subthreshold memory cell circuit for limiting drain current
06/27/2012CN101699627B Nonvolatile storage array and preparation method thereof
06/27/2012CN101617369B Memory having a dummy bitline for timing control
06/27/2012CN101206918B Semiconductor memory device
06/27/2012CN101154435B Semiconductor memory and system
06/27/2012CN101136426B Semiconductor device and method of manufacturing the same
06/26/2012US8209460 Dual memory chip package operable to access heterogeneous memory chips
06/26/2012US8208322 Non-volatile memory control
06/26/2012US8208311 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
06/26/2012US8208309 Semiconductor memory device and method of operating the same
06/26/2012US8208307 Operation method of memory device
06/26/2012US8208306 Hierarchical common source line structure in NAND flash memory
06/26/2012US8208305 Arrangement of pairs of NAND strings that share bitline contacts while utilizing distinct sources lines
06/26/2012US8208303 Semiconductor memory device having memory block configuration
06/26/2012US8208300 Non-volatile memory cell with injector
06/26/2012US8208298 MSB-based error correction for flash memory system
06/26/2012US8208297 Integrated circuits to control access to multiple layers of memory in a solid state drive
06/26/2012US8208296 Apparatus and method for extended nitride layer in a flash memory
06/26/2012US8208295 Heat assisted magnetic write element
06/26/2012US8208294 Resistive memory cell accessed using two bit lines
06/26/2012US8208293 Programmable phase-change memory and method therefor
06/26/2012US8208292 Magnetoresistive element and magnetic memory
06/26/2012US8208291 System and method to control a direction of a current applied to a magnetic tunnel junction
06/26/2012US8208290 System and method to manufacture magnetic random access memory
06/26/2012US8208289 Magnetoresistive effect element
06/26/2012US8208288 Hybrid superconducting-magnetic memory cell and array
06/26/2012US8208287 Contemporaneous margin verification and memory access for memory cells in cross-point memory arrays
06/26/2012US8208286 Green transistor for resistive random access memory and method of operating the same
06/26/2012US8208285 Vertical non-volatile switch with punchthrough access and method of fabrication therefor
06/26/2012US8208284 Data retention structure for non-volatile memory
06/26/2012US8208283 Data holding device
06/26/2012US8208282 Vertically stacked field programmable nonvolatile memory and method of fabrication
06/21/2012WO2012082640A2 Magnetic random access memory cells having improved size and shape characteristics
06/21/2012WO2012082480A2 Multi-die dram banks arrangement and wiring
06/21/2012WO2012081453A1 Semiconductor storage device
06/21/2012WO2012081159A1 Semiconductor memory device
06/21/2012WO2012040685A3 Fast exit from dram self-refresh
06/21/2012US20120155206 Semiconductor device periodically updating delay locked loop circuit
06/21/2012US20120155205 Semiconductor integrated circuit
06/21/2012US20120155201 System and method for hidden refresh rate modification
06/21/2012US20120155165 Memory
06/21/2012US20120155164 Multibit Cell of Magnetic Random Access Memory With Perpendicular Magnetization
06/21/2012US20120155163 Reducing programming time of a memory cell
06/21/2012US20120155162 Semiconductor storage apparatus or semiconductor memory module
06/21/2012US20120155161 Three-terminal ovonic threshold switch as a current driver in a phase change memory
06/21/2012US20120155160 Memory controller and method for interleaving dram and mram accesses
06/21/2012US20120155159 Multibit magnetic random access memory cell with improved read margin
06/21/2012US20120155158 Storage device and writing control method
06/21/2012US20120155157 Magnetic random access memory apparatus, methods for programming and verifying reference cells therefor
06/21/2012US20120155156 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
06/21/2012US20120155155 Generating a temperature-compensated write current for a magnetic memory cell
06/21/2012US20120155154 Three-Dimensional Magnetic Random Access Memory With High Speed Writing
06/21/2012US20120155153 Scalable Magnetic Memory Cell With Reduced Write Current
06/21/2012US20120155152 Static random access memory
06/21/2012US20120155151 Memory Device Having Memory Cells with Enhanced Low Voltage Write Capability
06/21/2012US20120155150 Semiconductor storage device
06/21/2012US20120155149 Semiconductor storage device
06/21/2012US20120155148 Resistance change memory device
06/21/2012US20120155147 Nonvolatile semiconductor memory device
06/21/2012US20120155146 Resistance-change memory
06/21/2012US20120155145 High speed FRAM
06/21/2012US20120155144 Fast response circuits and methods for fram power loss protection
06/21/2012DE102010063227A1 Measuring device for use in industrial measuring technology for density or permittivity of medium, has smart electronic unit equipped with main memory such as ferroelectric RAM for storing data required for restarting electronic unit
06/21/2012DE102006052338B4 Schreibzugriff und nachfolgender Lesezugriff auf einen Speicherbaustein Write access and subsequent read access to a memory block
06/20/2012EP2466587A2 Semiconductor storage device
06/20/2012EP2466586A1 Multibit magnetic random access memory cell with improved read margin
06/20/2012EP2465140A1 Heterojunction oxide non-volatile memory device
06/20/2012EP2353167B1 Racetrack memory device
06/20/2012EP2342716B1 Flux-closed stram with electronically reflective insulative spacer
06/20/2012EP2212888B1 Systems and methods for low power, high yield memory
06/20/2012EP2179419B1 Secure storage of a codeword within an integrated circuit
06/20/2012EP2165338B1 Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
06/20/2012CN202282164U 芯片供电电路 Chip power supply circuit
06/20/2012CN101847437B Operation method of semiconductor memory device
06/20/2012CN101548332B Non-volatile memory and method for cache page copy
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