G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2011
12/15/2011	US20110305070 Resistance control method for nonvolatile variable resistive element
12/15/2011	US20110305069 Nonvolatile memory device using resistance material and memory system including the nonvolatile memory device
12/15/2011	US20110305068 Resistance random access change memory device
12/15/2011	US20110305067 Semiconductor memory device in which resistance state of memory cell is controllable
12/15/2011	US20110305066 Write and erase scheme for resistive memory device
12/15/2011	US20110305065 Non-volatile variable capacitive device including resistive memory cell
12/15/2011	US20110305064 Interface control for improved switching in rram
12/15/2011	US20110305063 Sense amplifier for reading a crossbar memory array
12/15/2011	US20110305062 Memory cell and memory device using the same
12/15/2011	US20110305061 Ferroelectric Memories based on Arrays of Autonomous Memory Bits
12/15/2011	US20110305058 Nonvolatile memory device and method of fabricating same
12/15/2011	DE10297198B4 Speicher mit Kohlenstoff enthaltende Zwischenschicht, insbesondere für einen Phasenübergangsspeicher und Verfahren zur Herstellung Memory with carbon-containing intermediate layer, in particular for a phase-change memory and processes for preparing
12/14/2011	EP2395511A2 Semiconductor integrated circuit having low power consumption with self-refresh
12/14/2011	CN1868002B 具有多个控件的基于纳米管的开关元件及由其制成的电路 Based on circuit switching element and nanotubes made therefrom have multiple controls
12/14/2011	CN1701386B 用于读取无源矩阵可寻址器件的方法和器件 The method used to read passive matrix addressable devices and devices
12/14/2011	CN102282622A 磁性随机存取存储器(mram)的原位电阻测量 Magnetic random access memory (mram) resistance measurement situ
12/14/2011	CN102282621A 自旋转移力矩磁阻随机存取存储器内的位线电压控制 Spin Transfer Torque Magnetoresistive Random Access memory bit line voltage control
12/14/2011	CN102282620A 磁隧道结叠层 Magnetic tunnel junction stack
12/14/2011	CN102282619A 用以在ddr dram写入期间三态控制未使用数据字节的方法、系统及设备 For the tri-state control during ddr dram unused data byte write method, system and equipment
12/14/2011	CN102280138A 具有累积写入特征的存储方法、存储器和存储系统 Storage method has accumulated write features, memory, and storage systems
12/14/2011	CN102280137A 记忆体单元及相关记忆体装置 Memory unit and associated memory devices
12/14/2011	CN102280136A 磁存储器元件和磁存储器器件 The magnetic memory element and the magnetic memory device
12/14/2011	CN102280128A 存储器 Memory
12/14/2011	CN101685828B 半导体存储装置 The semiconductor memory device
12/14/2011	CN101685826B 一种具有二极管驱动器的存储阵列及其制造方法 A storage array and its manufacturing method diode driver has
12/14/2011	CN101546598B 磁阻随机存取存储器装置与其切换方法与存储器阵列 Magnetoresistive random access memory device with a memory array and its switching method
12/13/2011	US8078821 Semiconductor memory asynchronous pipeline
12/13/2011	US8078791 Ordering refresh requests to memory
12/13/2011	US8077525 Nonvolatile semiconductor memory device
12/13/2011	US8077523 Semiconductor memory device with a stacked gate including a charge storage layer and a control gate and method of controlling the same
12/13/2011	US8077522 Memory and method operating the memory
12/13/2011	US8077520 Determining threshold voltage distribution in flash memory
12/13/2011	US8077517 Distributed VDC for SRAM memory
12/13/2011	US8077514 Semiconductor memory device capable of memorizing multivalued data
12/13/2011	US8077513 Method and apparatus for programming a multi-level memory
12/13/2011	US8077511 Hybrid non-volatile memory
12/13/2011	US8077510 SRAM device
12/13/2011	US8077509 Magnetic memory
12/13/2011	US8077508 Dynamic multistate memory write driver
12/13/2011	US8077507 Phase-change memory device
12/13/2011	US8077506 Method for programming a multilevel phase change memory device
12/13/2011	US8077505 Bipolar switching of phase change device
12/13/2011	US8077503 Electronic devices utilizing spin torque transfer to flip magnetic orientation
12/13/2011	US8077502 Electronic devices utilizing spin torque transfer to flip magnetic orientation
12/13/2011	US8077501 Differential read and write architecture
12/13/2011	US8077500 Volatile memory elements with soft error upset immunity
12/13/2011	US8077499 Semiconductor integrated memory circuit and trimming method thereof
12/13/2011	US8077498 Reading a phase change memory
12/13/2011	US8077497 Resistive memory device and operating method thereof
12/13/2011	US8077496 Nonvolatile memory device and method of driving the same
12/13/2011	US8077495 Method of programming, erasing and repairing a memory device
12/13/2011	US8077494 Ferroelectric memory with sub bit-lines connected to each other and to fixed potentials
12/13/2011	US8077207 Camera unit incorporating a printer configured to print distorted images
12/13/2011	US8076706 Ferroelectric memory device and method of manufacturing the same
12/13/2011	US8076664 Phase change memory with layered insulator
12/13/2011	US8075104 Printhead nozzle having heater of higher resistance than contacts
12/08/2011	WO2011153451A2 Tfet based 4t memory devices
12/08/2011	WO2011153159A1 High-speed sensing for resistive memories
12/08/2011	WO2011152254A1 Semiconductor device
12/08/2011	US20110299352 Semiconductor device including memory cells that require refresh operation
12/08/2011	US20110299330 Pseudo page mode memory architecture and method
12/08/2011	US20110299329 Bottom electrode geometry for phase change memory
12/08/2011	US20110299328 Memory Arrays
12/08/2011	US20110299327 Four-transistor and five-transistor bjt-cmos asymmetric sram cells
12/08/2011	US20110299326 Tfet based 4t memory devices
12/08/2011	US20110299325 SRAM Devices And Methods Of Manufacturing The Same
12/08/2011	US20110299324 Write current compensation using word line boosting circuitry
12/08/2011	US20110299323 Floating Source Line Architecture for Non-Volatile Memory
12/08/2011	US20110299322 Method of programming variable resistance element, method of initializing variable resistance element, and nonvolatile storage device
12/08/2011	US20110299321 Semiconductor memory device
12/08/2011	US20110299320 Nonvolatile semiconductor memory device
12/08/2011	US20110299319 Non-volatile semiconductor storage device
12/08/2011	US20110299318 Semiconductor memory cell and manufacturing method thereof, and semiconductor memory devices
12/07/2011	EP2392010A1 Bit line voltage control in spin transfer torque magnetoresistive random access memory
12/07/2011	EP2392009A1 Structure and method for fabricating cladded conductive lines in magnetic memories
12/07/2011	CN202067564U 一种高密度、高鲁棒性的亚阈值存储电路接口电路 A high-density, high robustness subthreshold storage circuit interface circuit
12/07/2011	CN1825483B 非易失性存储器装置及其编程与读取方法 Non-volatile memory device and method for programming and read
12/07/2011	CN102272965A 具有存储层材料的磁性元件 Storage layer material having a magnetic element
12/07/2011	CN102272852A 连续扫描时域感测的非易失性存储器和方法 Non-volatile memory and method of continuous scanning field sensed
12/07/2011	CN102272850A 对空间和温度变化的敏感性减少的感测电路和方法 Sensitivity to temperature changes and to reduce the space of the sensing circuit and method
12/07/2011	CN102272849A 可变存储器刷新装置和方法 Variable memory refreshing apparatus and method
12/07/2011	CN102272848A 控制内存条存取的固态硬盘控制器 SSDs memory access controller
12/07/2011	CN102272847A 在磁性隧道结元件处读取及写入数据的系统及方法 System and method to read and write data in a magnetic tunnel junction element at
12/07/2011	CN102272846A 具有未固定基准层和单向写电流的自旋扭矩位单元 Has not fixed the reference layer and unidirectional write current of spin torque bit cell
12/07/2011	CN102272845A 具有双重自旋转矩基准层的磁性随机存取存储器 Has a dual spin-torque magnetic random access memory reference layer
12/07/2011	CN102272844A 自旋力矩转移磁性随机存取存储器单元结构 Spin torque transfer magnetic random access memory cell structures
12/07/2011	CN102272843A 使用双技术晶体管的低泄漏高性能静态随机存取存储器单元 Dual low-leakage high-performance technology transistor static random access memory cell
12/07/2011	CN102270654A 阻变随机访问存储器件及其制造和操作方法 Resistive random access memory device and method of manufacturing and operating
12/07/2011	CN102270498A 一种低功耗相变存储器及其写操作方法 A low-power phase change memory and write methods
12/07/2011	CN102270497A 以影子非挥发存储器配置冗余存储的存储器 In the shadow of a non-volatile memory is configured redundant storage memory
12/07/2011	CN102270496A 集成电路装置 The integrated circuit device
12/07/2011	CN102270490A 一种大容量dram芯片存储阵列结构 A high capacity memory chip array structure dram
12/07/2011	CN101728482B 相变半导体器件的制造方法及相变半导体器件 The method of manufacturing a semiconductor device and a phase change phase change semiconductor device
12/07/2011	CN101447787B 现场可编程门阵列 Field Programmable Gate Arrays
12/07/2011	CN101359502B 一种高密度多值相变存储器的存储方案 A memory storage scheme of a high density multi-value phase change
12/07/2011	CN101169967B 低功率动态随机存取存储器及其驱动方法 Low power dynamic random access memory and driving method thereof
12/07/2011	CN101145571B 采用磁畴壁移动的存储器装置 A memory device using magnetic domain wall movement
12/07/2011	CN101136241B 半导体存储装置 The semiconductor memory device
12/07/2011	CN101060160B 存储元件和存储器 And a memory storage element
12/07/2011	CN101047026B 半导体存储器件 A semiconductor memory device

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