| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 01/26/2012 | US20120020146 Static Random Access Memory Device Including Negative Voltage Level Shifter |
| 01/26/2012 | US20120020145 Identification Circuit and Method for Generating an Identification Bit |
| 01/26/2012 | US20120020144 Semiconductor device having floating body type transistor |
| 01/26/2012 | US20120020143 Array Operation Using A Schottky Diode As A Non Ohmic Selection Device |
| 01/26/2012 | US20120020142 Resistive memory |
| 01/26/2012 | US20120020141 Variable-resistance memory device and its driving method |
| 01/26/2012 | US20120020140 Resistive memory cell and operation thereof, and resistive memory and operation and fabrication thereof |
| 01/26/2012 | DE10228560B4 Dünnfilmmagnetspeichervorrichtung mit einer Datenlesestromeinstellungsfunktion Thin film magnetic memory device having a data read current setting function |
| 01/26/2012 | DE102008011069B4 Integrierte Schaltung sowie Verfahren zum verbesserten Bestimmen eines Speicherzustands einer Speicherzelle Integrated circuit and method for determining an improved memory state of a memory cell |
| 01/26/2012 | DE102005036528B4 Speicherbaustein und Verfahren zum Betreiben eines Speicherbausteins Memory device and method of operating a memory device |
| 01/25/2012 | EP2410588A2 Magnetic Tunnel Junction Structure |
| 01/25/2012 | EP2409343A2 Hybrid molecular memory with high charge retention |
| 01/25/2012 | EP2409301A1 Volatile memory elements with soft error upset immunity |
| 01/25/2012 | EP2409235A2 Memory access controller, systems, and methods for optimizing memory access times |
| 01/25/2012 | EP1861854B1 Proton and heavy ion seu resistant sram |
| 01/25/2012 | EP1805803B1 Scrambling method to reduce wordline coupling noise |
| 01/25/2012 | CN1996572B Method of fabricating phase change ram |
| 01/25/2012 | CN1864229B Magnetic tunnel junction device and writing/reading method for said device |
| 01/25/2012 | CN1768390B Integrated circuit, and its operation method, memory, wireless device and device |
| 01/25/2012 | CN1725374B Semiconductor memory device including circuit to store access data |
| 01/25/2012 | CN102334166A Reducing source loading effect in spin torque transfer magnetoresitive random access memory (stt-mram) |
| 01/25/2012 | CN102334165A Dynamic leakage control for memory arrays |
| 01/25/2012 | CN102332302A Phase change memory and redundancy replacing method for same |
| 01/25/2012 | CN102332300A Semiconductor memory device |
| 01/25/2012 | CN102332299A SRAM (System Random Access Memory) unit |
| 01/25/2012 | CN102332298A Static random access memory (SRAM) circuit device employing hierarchical bit lines and two-stage sensitive amplifier |
| 01/25/2012 | CN102332297A Magnetic storage element and magnetic memory |
| 01/25/2012 | CN102332295A Memory circuit and method for reading data by applying same |
| 01/25/2012 | CN101599294B Method for storing multiple virtual queues data based on FPGA |
| 01/25/2012 | CN101405810B Method and system for error correction in flash memory |
| 01/25/2012 | CN101388401B Diode driving resistor conversion memory cell and manufacturing method thereof |
| 01/25/2012 | CN101388245B Semiconductor integrated circuit device |
| 01/25/2012 | CN101346773B Reference sense amplifier and method for compensated sensing in non-volatile memory |
| 01/25/2012 | CN101329904B Open bit line DRAM and method for reducing noise for open bit line DRAM operation |
| 01/25/2012 | CN101197186B Ferroelectric memory device and electronic equipment |
| 01/25/2012 | CN101178932B Method for reading double places memory cell |
| 01/24/2012 | US8103938 Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data |
| 01/24/2012 | US8103921 Fully-buffered dual in-line memory module with fault correction |
| 01/24/2012 | US8103841 Non-volatile memory and method with non-sequential update block management |
| 01/24/2012 | US8102718 Method for programming a floating gate |
| 01/24/2012 | US8102716 Nonvolatile semiconductor memory device and method for performing verify write operation on the same |
| 01/24/2012 | US8102715 Power-off apparatus, systems, and methods |
| 01/24/2012 | US8102714 Programming methods for multi-level memory devices |
| 01/24/2012 | US8102712 NAND programming technique |
| 01/24/2012 | US8102710 System and method for setting access and modification for synchronous serial interface NAND |
| 01/24/2012 | US8102708 Flash multi-level threshold distribution scheme |
| 01/24/2012 | US8102703 Magnetic element with a fast spin transfer torque writing procedure |
| 01/24/2012 | US8102702 Phase change memory and operation method of the same |
| 01/24/2012 | US8102701 Magnetic memory with a thermally assisted writing procedure |
| 01/24/2012 | US8102700 Unidirectional spin torque transfer magnetic memory cell structure |
| 01/24/2012 | US8102698 Structure and method for biasing phase change memory array for reliable writing |
| 01/24/2012 | US8102697 Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array |
| 01/24/2012 | US8102696 Nonvolatile memory device and method of writing data to nonvolatile memory device |
| 01/24/2012 | US8102695 Semiconductor device |
| 01/24/2012 | US8102694 Nonvolatile memory device containing carbon or nitrogen doped diode |
| 01/24/2012 | US8102693 Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
| 01/24/2012 | US8102018 Nonvolatile resistive memories having scalable two-terminal nanotube switches |
| 01/24/2012 | US8101983 Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same |
| 01/24/2012 | US8101976 Device selection circuitry constructed with nanotube ribbon technology |
| 01/24/2012 | US8101942 Self-assembled monolayer based silver switches |
| 01/24/2012 | US8101938 Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method |
| 01/19/2012 | WO2012009589A1 Programmable write driver for stt-mram |
| 01/19/2012 | WO2012009266A1 Fast random access to non-volatile storage |
| 01/19/2012 | WO2012009179A1 Non-volatile static ram cell circuit and timing method |
| 01/19/2012 | WO2012008390A1 Semiconductor device |
| 01/19/2012 | WO2012008286A1 Semiconductor device |
| 01/19/2012 | WO2011140033A3 Techniques for refreshing a semiconductor memory device |
| 01/19/2012 | US20120017038 Non-Volatile Memory And Method With Control Data Management |
| 01/19/2012 | US20120014199 Semiconductor device that performs refresh operation |
| 01/19/2012 | US20120014190 Refresh Signal Generating Circuit |
| 01/19/2012 | US20120014188 Method of maintaining the state of semiconductor memory having electrically floating body transistor |
| 01/19/2012 | US20120014178 Nonvolatile semiconductor memory device and method of reusing same |
| 01/19/2012 | US20120014177 Semiconductor switching device |
| 01/19/2012 | US20120014176 Creating spin-transfer torque in oscillators and memories |
| 01/19/2012 | US20120014175 Magnetic Tunnel Junction and Memristor Apparatus |
| 01/19/2012 | US20120014174 Programmable Write Driver For STT-MRAM |
| 01/19/2012 | US20120014173 Disturb-Free Static Random Access Memory Cell |
| 01/19/2012 | US20120014172 Static Random Access Memory Devices Having Read And Write Assist Circuits Therein That Improve Read And Write Reliability |
| 01/19/2012 | US20120014171 Schmitt trigger-based finfet sram cell |
| 01/19/2012 | US20120014170 Capacitive Crossbar Arrays |
| 01/19/2012 | US20120014169 Non-volatile data-storage latch |
| 01/19/2012 | US20120014168 Dual Stage Sensing for Non-Volatile Memory |
| 01/19/2012 | US20120014167 Semiconductor memory device |
| 01/19/2012 | US20120014166 Resistive memory |
| 01/19/2012 | US20120014165 Optimized solid electrolyte for programmable metallization cell devices and structures |
| 01/19/2012 | US20120014164 Resistance-change memory and method of operating the same |
| 01/19/2012 | US20120014163 Semiconductor memory device and method of driving the same |
| 01/19/2012 | US20120014162 Semiconductor memory device featuring selective data storage in a stacked memory cell structure |
| 01/19/2012 | US20120014161 Memristive Negative Differential Resistance Device |
| 01/19/2012 | US20120014160 Non-Volatile Re-Programmable Memory Device |
| 01/19/2012 | US20120014159 Memory device |
| 01/18/2012 | EP2277175B1 Apparatus and method for producing switchable temporary magnetism in oxidic materials by means of electrical fields |
| 01/18/2012 | EP1266381B1 Method and apparatus for an easy identification of a state of a dram generator controller |
| 01/18/2012 | CN1945836B Bidirectional split gate nand flash memory structure/array, programming, erasing reading and manufacturing |
| 01/18/2012 | CN1898749B Memory device, memory circuit and semiconductor integrated circuit having variable resistance |
| 01/18/2012 | CN102326206A Memory reading method taking care of resistance drift effects |
| 01/18/2012 | CN102326205A Dynamic random access memory (DRAM) refresh |
| 01/18/2012 | CN102326204A Spin-transfer torque memory self-reference read method |
| 01/18/2012 | CN102324250A Semiconductor device |
| 01/18/2012 | CN102324249A Bi-multi-converting circuit of embedded DRAM of K value storing unit and constructing method thereof |