Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2012
03/01/2012US20120051119 Semiconductor device
03/01/2012US20120051118 Memory device and semiconductor device
03/01/2012US20120051117 Signal processing circuit and method for driving the same
03/01/2012US20120051116 Driving method of semiconductor device
03/01/2012US20120051115 Resistance changing memory cell architecture
03/01/2012US20120051114 Non-volatile memory device
03/01/2012DE102004030174B4 Magnetischer Direktzugriffsspeicher The magnetic random access memory
02/2012
02/29/2012EP2422346A1 Magnetic vortex storage device
02/29/2012EP2286473B1 Three-layer magnetic element, method for the production thereof, magnetic field sensor, magnetic memory, and magnetic logic gate using such an element
02/29/2012EP1590738B8 Distributed memory computing environment and implementation thereof
02/29/2012EP1555694B1 Spin transistor using spin filter effect and nonvolatile memory using spin transistor
02/29/2012CN1905057B Memory
02/29/2012CN1853239B Detecting over programmed memory
02/29/2012CN1781157B Non-volatile memory having a bias on the source electrode for HCI programming and its programming method
02/29/2012CN1759450B Programmable resistance memory device
02/29/2012CN101813966B Chip resetting method, chip and double rate memory system
02/29/2012CN101771067B Magnetic memory and driving method as well as manufacturing method thereof
02/29/2012CN101499314B Memory device and its updating method
02/29/2012CN101483064B Method for adaptive detecting configuration by SDRAM
02/29/2012CN101405813B Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
02/29/2012CN101199025B Selective slow programming convergence in a flash memory device
02/29/2012CN101105972B Semiconductor memory, controller and method for operating semiconductor memory
02/29/2012CN101093715B Device, method and system for thermal sensor with switch control
02/28/2012US8127152 Method of operation of a memory device and system including initialization at a first frequency and operation at a second frequency and a power down exit mode
02/28/2012US8127069 Memory device including self-ID information
02/28/2012US8125837 Semiconductor memory device with read/write margin control using back-gate bias
02/28/2012US8125832 Variable initial program voltage magnitude for non-volatile storage
02/28/2012US8125830 Area-efficient electrically erasable programmable memory cell
02/28/2012US8125828 Page buffer circuit with reduced size and methods for reading and programming data with the same
02/28/2012US8125827 Flash memory systems and operating methods using adaptive read voltage levels
02/28/2012US8125825 Memory system protected from errors due to read disturbance and reading method thereof
02/28/2012US8125824 Nanotube random access memory (NRAM) and transistor integration
02/28/2012US8125823 Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer
02/28/2012US8125821 Method of operating phase-change memory
02/28/2012US8125820 Semiconductor memory device
02/28/2012US8125819 Asymmetric write current compensation using gate overdrive for resistive sense memory cells
02/28/2012US8125818 Method of programming variable resistance element and variable resistance memory device using the same
02/28/2012US8125817 Nonvolatile storage device and method for writing into the same
02/28/2012US8125816 Semiconductor storage device
02/28/2012US8125039 One-time programmable, non-volatile field effect devices and methods of making same
02/28/2012US8125017 Semiconductor integrated circuit device with reduced leakage current
02/28/2012US8125003 High-performance one-transistor memory cell
02/28/2012US8123336 Printhead micro-electromechanical nozzle arrangement with motion-transmitting structure
02/23/2012WO2012023277A1 Low-voltage semiconductor memory
02/23/2012WO2012023157A1 Magnetoresistance element and semiconductor storage device
02/23/2012WO2012006609A3 Memory devices and methods having multiple address accesses in same cycle
02/23/2012WO2011149274A3 Magnetic tunnel junction device having amorphous buffer layers that are magnetically connected together and that have perpendicular magnetic anisotropy
02/23/2012US20120044774 Sense amplifier for low voltage high speed sensing
02/23/2012US20120044767 Non-volatile memory device and method for fabricating the same
02/23/2012US20120044763 Non-Volatile Memory and Semiconductor Device
02/23/2012US20120044760 Nonvolatile semiconductor memory device and driving method thereof
02/23/2012US20120044759 Nonvolatile semiconductor memory device and driving method thereof
02/23/2012US20120044758 Circuit and system of using at least one junction diode as program selector for memories
02/23/2012US20120044757 Memory using a plurality of diodes as program selectors with at least one being a polysilicon diode
02/23/2012US20120044756 Memory devices using a plurality of diodes as program selectors with at least one being a polysilicon diode
02/23/2012US20120044755 System and Method of Reference Cell Testing
02/23/2012US20120044754 Spin-Torque Transfer Magneto-Resistive Memory Architecture
02/23/2012US20120044753 Programmably reversible resistive device cells using cmos logic processes
02/23/2012US20120044752 High density integrated circuitry for semiconductor memory
02/23/2012US20120044751 Bipolar resistive-switching memory with a single diode per memory cell
02/23/2012US20120044750 Semiconductor memory device
02/23/2012US20120044749 Variable resistance nonvolatile storage device and method of forming memory cell
02/23/2012US20120044748 Sensing Circuit For Programmable Resistive Device Using Diode as Program Selector
02/23/2012US20120044747 Reversible resistive memory using diodes formed in cmos processes as program selectors
02/23/2012US20120044746 Circuit and system of using a junction diode as program selector for resistive devices
02/23/2012US20120044745 Reversible resistive memory using polysilicon diodes as program selectors
02/23/2012US20120044744 Programmably reversible resistive device cells using polysilicon diodes
02/23/2012US20120044743 Circuit and system of using a polysilicon diode as program selector for resistive devices in cmos logic processes
02/23/2012US20120044742 Variable resistance memory array architecture
02/23/2012DE10227548B4 Schaltungsanordnung eines Halbleiterspeicherbauelements und Betriebsverfahren hierfür A circuit arrangement of a semiconductor memory device and operation method thereof
02/22/2012EP2421063A1 Ferromagnetic tunnel junction structure, and magnetoresistive effect element and spintronics device each comprising same
02/22/2012EP2421003A2 Antifuse circuit
02/22/2012EP2421002A1 VSS-sensing amplifier
02/22/2012EP2419933A2 Magnetic tunnel junction (mtj) and methods, and magnetic random access memory (mram) employing same
02/22/2012EP2419902A1 Ram memory element with one transistor
02/22/2012EP2003568B1 Memory device, control method for the same, control program for the same, memory card, circuit board and electronic equipment
02/22/2012CN1941173B 延迟锁相回路电路以及同步存储器装置 Delay locked loop circuit and a synchronous memory device
02/22/2012CN1801389B 带有自举存储器电源的高性能寄存器文件和相关方法 Bootstrap memory power performance with the register file and associated methods
02/22/2012CN102360567A Eight-tube storage unit capable of automatically adjusting strength of transmission tube and strength of pull-down tube
02/22/2012CN102360566A Method and realization circuit for reinforcing irradiation resistance of programming points of static random access memory (SRAM)
02/22/2012CN102360565A Charge pump system and method for generating reading and writing operation word line voltage by aid of same and memory
02/22/2012CN102360564A Twin transistor memory
02/22/2012CN101582294B 一种解决sram模块闩锁问题与增强sram模块可靠性的方法 A method of solving the problem sram modules latches and enhanced reliability sram module
02/22/2012CN101454840B 半导体器件 Semiconductor devices
02/22/2012CN101110265B 选择性地将数据提供给放大器的随机存取存储器 Selectively provides the data to the random access memory of the amplifier
02/22/2012CN101075474B 半导体存储器及其操作方法 The semiconductor memory device and method of operation
02/22/2012CN101034588B 半导体存储器、存储系统和半导体存储器的操作方法 Operating method for a semiconductor memory, a semiconductor memory storage system, and
02/21/2012US8122233 Information processing device
02/21/2012US8122218 Semiconductor memory asynchronous pipeline
02/21/2012US8120975 Memory having negative voltage write assist circuit and method therefor
02/21/2012US8120966 Method and apparatus for management of over-erasure in NAND-based NOR-type flash memory
02/21/2012US8120963 Method and system for program pulse generation during programming of nonvolatile electronic devices
02/21/2012US8120961 Nonvolatile semiconductor memory device
02/21/2012US8120958 Multi-die memory, apparatus and multi-die memory stack
02/21/2012US8120957 Nonvolatile semiconductor storage device, nonvolatile semiconductor storage system and method of managing of defective column in nonvolatile semiconductor storage system
02/21/2012US8120955 Array and control method for flash based FPGA cell
02/21/2012US8120951 Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
02/21/2012US8120950 Semiconductor device
02/21/2012US8120949 Low-cost non-volatile flash-RAM memory
02/21/2012US8120948 Data writing method for magnetoresistive effect element and magnetic memory
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