Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2012
05/03/2012US20120106235 Implementing physically unclonable function (puf) utilizing edram memory cell capacitance variation
05/03/2012US20120106234 Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Including Resistance Change Material and Method of Operating
05/03/2012US20120106233 Reduced switching-energy magnetic elements
05/03/2012US20120106232 Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells
05/03/2012US20120106226 Semiconductor memory device
05/02/2012EP2447949A1 Multi level magnetic element
05/02/2012EP2447948A1 Thermally assisted magnetic random access memory element with improved endurance
05/02/2012EP2447947A1 Spin dependent tunneling memory
05/02/2012EP2446471A2 High speed low power magnetic devices based on current induced spin-momentum transfer
05/02/2012EP2446443A1 Forecasting program disturb in memory by detecting natural threshold voltage distribution
05/02/2012EP2446442A1 Detecting the completion of programming for non-volatile storage
05/02/2012EP2446440A1 Spin-torque magnetoresistive structures with bilayer free layer
05/02/2012EP2446439A1 Pointer based column selection techniques in non-volatile memories
05/02/2012EP2062263B1 Method and apparatus for dual data-dependent busses for coupling read/write circuits to a memory array
05/02/2012EP1537668B1 Synchronous mirror delay (smd) circuit and method including a ring oscillator for timing coarse and fine delay intervals
05/02/2012CN1945733B Semiconductor memory device
05/02/2012CN102439745A Magnetoelectronic components and measurement method
05/02/2012CN102439665A Writing a multibit resistance-switching memory cell including a dummy resistance, resistance switching elements and diodes
05/02/2012CN102439664A Transistor gate driver for short circuit protection
05/02/2012CN102436847A PMOS (P-channel Metal Oxide Semiconductor) pipe band-pass-band-stop changeable threshold circuit and PMOS pipe high-pass-low-pass changeable threshold circuit
05/02/2012CN102436846A Memory device and semiconductor device
05/02/2012CN101515472B Method for accessing memory chip
05/02/2012CN101452944B Memory
05/02/2012CN101027842B Data processing circuit and method for encoding/decoding input data word
05/01/2012US8171331 Memory channel having deskew separate from redrive
05/01/2012US8171207 Adaptive hybrid density memory storage device and control method thereof
05/01/2012US8171205 Wrap-around sequence numbers for recovering from power-fall in non-volatile memory
05/01/2012US8170287 Real-time self collision and obstacle avoidance
05/01/2012US8169833 Partitioning process to improve memory cell retention
05/01/2012US8169832 Methods of erase verification for a flash memory device
05/01/2012US8169829 Memory controller, memory system, recording and reproducing method for memory system, and recording apparatus
05/01/2012US8169827 NAND flash memory string apparatus and methods of operation thereof
05/01/2012US8169825 Reliable data storage in analog memory cells subjected to long retention periods
05/01/2012US8169824 Semiconductor device including contact plug having an elliptical sectional shape
05/01/2012US8169823 Memory devices having volatile and non-volatile memory characteristics and methods of operating the same
05/01/2012US8169822 Data state-dependent channel boosting to reduce channel-to-floating gate coupling in memory
05/01/2012US8169821 Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (SSTTMRAM)
05/01/2012US8169820 Use of symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
05/01/2012US8169819 Semiconductor storage device
05/01/2012US8169818 Recording method for magnetic memory device
05/01/2012US8169817 Magnetoresistive device and magnetic random access memory
05/01/2012US8169816 Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory
05/01/2012US8169815 System and method for writing data to magnetoresistive random access memory cells
05/01/2012US8169814 Schmitt trigger-based finFET SRAM cell
05/01/2012US8169813 Method for evaluating SRAM memory cell and computer readable recording medium which records evaluation program of SRAM memory cell
05/01/2012US8169811 Non-volatile re-programmable memory device
05/01/2012US8169810 Magnetic memory with asymmetric energy barrier
05/01/2012US8169233 Programming of DIMM termination resistance values
05/01/2012US8168448 Ferroelectric register, and method for manufacturing capacitor of the same
04/2012
04/26/2012WO2012054261A1 System and method of interleaving data according to an adjustable parameter
04/26/2012WO2012054082A1 Reference cell architectures for small memory array block activation
04/26/2012WO2012053374A1 Method for driving semiconductor device
04/26/2012WO2012027423A3 Wide input output memory with low density, low latency and high density, high latency blocks
04/26/2012US20120099389 Memory circuits, systems, and modules for performing dram refresh operations and methods of operating the same
04/26/2012US20120099371 Method of operating a phase-change memory device
04/26/2012US20120099370 Phase change memory device
04/26/2012US20120099369 Magnetoresistive element and magnetic memory
04/26/2012US20120099368 Method for driving semiconductor device
04/26/2012US20120099367 Cross point variable resistance nonvolatile memory device
04/26/2012US20120099366 Multi-resistive integrated circuit memory
04/26/2012US20120099365 Three dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
04/26/2012US20120099364 Resistive memory devices, initialization methods, and electronic devices incorporating same
04/26/2012US20120099363 Resistance change type memory
04/26/2012US20120099362 Memory array with metal-insulator transition switching devices
04/26/2012DE4447754B4 Verfahren zum Treiben einer Wortleitung einer Halbleiterspeichereinrichtung A method for driving a word line of a semiconductor memory device
04/26/2012DE102011054380A1 Memory module e.g. single inline memory module (SIMM) for desktop computer, has memory circuit for storing operating parameters for regions of dynamic RAM for influencing operation of regions in response to command
04/25/2012EP2443628A1 Differential sense amplifier with current mirroring and reference memory cell
04/25/2012EP1943651B1 Dynamic random access memory device and method for self-refreshing memory cells
04/25/2012EP1485919B1 Method and system for maximizing dram memory bandwidth
04/25/2012CN1921013B 相位变化随机访问存储装置 A phase change random access memory means
04/25/2012CN1890752B 电阻存储器的ac感测 Measuring ac sense resistor memory
04/25/2012CN1722301B Semiconductor storage device
04/25/2012CN1598905B Circuits and methods for driving flat panel displays
04/25/2012CN102428519A Method for driving semiconductor storage device
04/25/2012CN102428518A 具有双层自由层的自旋扭矩磁阻结构 Spin torque magnetoresistive structure having a double free layer
04/25/2012CN102427067A 一种无电容动态随机存储单元及其制作方法与存储方法 A non-capacitor dynamic random access memory cell and its production method and storage method
04/25/2012CN102426855A 嵌入dram存储矩阵的8值存储单元及其相关转换电路 Embedded dram memory matrix value storing unit 8 and its associated switching circuit
04/25/2012CN102426854A Method for lowering DDR3 (Double Data Rate) memory refreshing power consumption
04/25/2012CN102426850A Method for reducing DDR2 initialization time
04/25/2012CN101354912B 驱动相变存储设备的方法 Phase change memory device driving method
04/25/2012CN101079316B 在刷新时最小化功耗的具有温度感测设备的半导体存储器 When you refresh minimize power consumption semiconductor memory having a temperature sensing device
04/25/2012CN101064188B 半导体装置及静态随机存取存储器存储单元 The semiconductor memory cell device and a static random access
04/25/2012CN101047024B 存储器 Memory
04/24/2012US8166238 Method, device, and system for preventing refresh starvation in shared memory bank
04/24/2012US8164974 Memory circuits, systems, and method of interleaving accesses thereof
04/24/2012US8164969 Ultra-low power hybrid circuits
04/24/2012US8164959 Method and system for programming non-volatile memory cells based on programming of proximate memory cells
04/24/2012US8164958 Memory apparatus and method for operating the same
04/24/2012US8164955 NOR flash memory device and method for fabricating the same
04/24/2012US8164954 Flash memory device and program method thereof
04/24/2012US8164949 Reducing drift in chalcogenide devices
04/24/2012US8164948 Spintronic devices with integrated transistors
04/24/2012US8164947 Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion
04/24/2012US8164946 Magnetic memory element, magnetic memory device, information recording/reproducing apparatus
04/24/2012US8164945 8T SRAM cell with two single sided ports
04/24/2012US8164944 Driver circuit and image forming apparatus
04/24/2012US8164943 Soft error robust storage SRAM cells and flip-flops
04/24/2012US8164942 High performance eDRAM sense amplifier
04/24/2012US8164941 Semiconductor memory device with ferroelectric device and refresh method thereof
04/24/2012US8164940 Read/write structures for a three dimensional memory
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