Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2012
05/23/2012CN102468303A 半导体存储单元、器件及其制备方法 The semiconductor memory cell device and a method for preparing
05/23/2012CN102467961A 静态随机访问存储器及其控制方法 Static random access memory device and control method
05/23/2012CN102467960A 半导体装置 Semiconductor device
05/23/2012CN102467959A 集成电路 IC
05/23/2012CN102467958A 一种动态存储器的刷新频率装置及其方法 Refresh frequency device and a method for dynamic memory
05/23/2012CN102467957A 刷新操作控制电路、半导体存储器件和刷新操作控制方法 The refresh operation control circuit, a semiconductor memory device, and refresh operation control method
05/23/2012CN102467956A 时钟控制电路和使用时钟控制电路的半导体存储装置 The clock control circuit and a semiconductor memory device using the clock control circuit
05/23/2012CN102467955A Semiconductor apparatus and stacked semiconductor memory apparatus
05/23/2012CN102467954A Method of switching out-of-plane magnetic tunnel junction cells
05/23/2012CN101872769B Ferroelectric dynamic random access memory based on atomic layer deposited isolating layer and preparation method
05/23/2012CN101587905B Phase change nanometer transistor unit device and manufacturing method thereof
05/23/2012CN101529521B Two-port SRAM having improved write operation
05/23/2012CN101477829B Multiport memory based on dynamic random access memory core
05/23/2012CN101329898B Memory driving method and semiconductor storage device
05/23/2012CN101276641B Semiconductor memory device
05/23/2012CN101212018B Storage element and memory
05/23/2012CN101207179B Memory cell and manufacturing method thereof
05/23/2012CN101207129B Semiconductor memory device
05/23/2012CN101194322B non-volatile memory system and its reading method
05/23/2012CN101183704B Tunneling magnetoresistance device, its manufacture method, magnetic head and magnetic memory using tmr device
05/23/2012CN101145599B Memory device having wide area phase change element and small electrode contact area
05/22/2012US8185690 Memory module, memory system, and information device
05/22/2012US8184491 Method for reading memory cell
05/22/2012US8184485 Semiconductor device having coupling elimination circuit
05/22/2012US8184484 Semiconductor memory device including stacked gate having charge accumulation layer and control gate and method of writing data to semiconductor memory device
05/22/2012US8184481 Memory devices and methods of their operation including selective compaction verify operations
05/22/2012US8184477 Semiconductor switching device
05/22/2012US8184476 Random access memory architecture including midpoint reference
05/22/2012US8184475 Robust local bit select circuitry to overcome timing mismatch
05/22/2012US8184474 Asymmetric SRAM cell with split transistors on the strong side
05/22/2012US8184473 Nanowire memory device and method of manufacturing the same
05/22/2012US8184472 Split-gate DRAM with lateral control-gate MuGFET
05/22/2012US8184471 DRAM having stacked capacitors of different capacitances
05/22/2012US8184470 Resistance change memory device and programming method thereof
05/22/2012US8184469 Stored multi-bit data characterized by multiple-dimensional memory states
05/22/2012US8184468 Nonvolatile memory devices using variable resistive elements
05/22/2012US8184467 Card-like memory unit with separate read/write unit
05/22/2012US8184410 Magnetoresistive element having free layer magnetic compound expressed by M1M2O
05/22/2012US8183665 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
05/22/2012US8183654 Static magnetic field assisted resistive sense element
05/22/2012US8183653 Magnetic tunnel junction having coherent tunneling structure
05/22/2012US8183652 Non-volatile magnetic memory with low switching current and high thermal stability
05/22/2012US8183601 Thin film transistor array panel for a liquid crystal display
05/22/2012US8183559 Organic field effect transistor
05/18/2012WO2012064464A1 Memory controller and system for storing blocks of data in non-volatile memory devices in a redundant manner
05/18/2012WO2012064463A1 Memory controller and system for storing blocks of data in non-volatile memory devices for high speed sequential reading
05/18/2012WO2012064395A1 Non-volatile magnetic tunnel junction transistor
05/18/2012WO2012036752A3 An eeprom-based, data-oriented combo nvm design
05/18/2012WO2012036739A3 An eeprom-based, data-oriented combo nvm design
05/17/2012US20120120739 Semiconductor memory device and method of controlling the same
05/17/2012US20120120728 Non-volatile memory device
05/17/2012US20120120726 Variable initial program voltage magnitude for non-volatile storage
05/17/2012US20120120724 Phase change memory device
05/17/2012US20120120723 Dynamic Pulse Operation for Phase Change Memory
05/17/2012US20120120722 Pipeline architecture for scalable performance on memory
05/17/2012US20120120721 Unidirectional spin torque transfer magnetic memory cell structure
05/17/2012US20120120720 Multilevel magnetic element
05/17/2012US20120120719 Non-volatile magnetic tunnel junction transistor
05/17/2012US20120120718 Multi-Bit Magnetic Memory with Independently Programmable Free Layer Domains
05/17/2012US20120120717 Sram cell
05/17/2012US20120120716 Secure non-volatile memory
05/17/2012US20120120715 Semiconductor device
05/17/2012US20120120714 Memory resistor having multi-layer electrodes
05/17/2012US20120120713 Asymmetric Write Current Compensation Using Gate Overdrive for Resistive Sense Memory Cells
05/17/2012US20120120712 Forming method for variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
05/17/2012US20120120711 Memory system with reversible resistivity-switching using pulses of alternatrie polarity
05/17/2012US20120120710 Memory system with reversible resistivity-switching using pulses of alternatrie polarity
05/17/2012US20120120709 Transistor Driven 3D Memory
05/17/2012US20120120708 Method of switching out-of-plane magnetic tunnel junction cells
05/17/2012US20120120706 Semiconductor memory device
05/17/2012US20120120704 Single event upset hardened static random access memory cell
05/16/2012EP2453482A1 Magnetization-reversing apparatus, memory element, and magnetic field-generating apparatus
05/16/2012EP2452342A1 System and method for manipulating domain pinning and reversal in ferromagnetic materials
05/16/2012EP2452341A1 Optimized page programming order for non-volatile memory
05/16/2012EP2452340A1 Organic-electronic circuit
05/16/2012EP2118893B1 Non-volatile magnetic memory element with graded layer
05/16/2012DE10031433B4 Speichervorrichtung mit Paketbefehl Storage device with packet command
05/16/2012CN1750168B Magnetic memory device and its operation method and producing method
05/16/2012CN1540762B Flash memory possessing groove type selection grid and manufacturing method
05/16/2012CN102460584A 在非易失性存储器器件内将以二进制格式存储的数据折叠为多状态格式 In the non-volatile memory device will store binary data format folded into a multi-state format
05/16/2012CN102460583A Method for regulating voltage characteristics of a latch circuit, method for regulating voltage characteristics of a semiconductor device, and regulator of voltage characteristics of a latch circuit
05/16/2012CN102456832A Phase change memory cell and forming method thereof
05/16/2012CN102456398A Resistive memory devices, initialization methods, and electronic devices incorporating same
05/16/2012CN102456397A Read distribution management for phase change memory
05/16/2012CN102456396A 相变存储阵列的位线结构 A phase change memory array bit line structure
05/16/2012CN102456395A 用于低供应电压的电子泵 For low supply voltage of the electronic pump
05/16/2012CN102456394A Memory circuits, systems, and modules for performing DRAM refresh operations and methods of operating the same
05/16/2012CN102456393A 磁存储元件的场辅助切换 Field assisted switching magnetic storage element
05/16/2012CN101728481B Method for manufacturing phase-change semiconductor device and phase-change semiconductor device
05/16/2012CN101075479B Semiconductor memory device with reduced current consumption
05/15/2012US8180981 Cache coherent support for flash in a memory hierarchy
05/15/2012US8180500 Temperature sensing system and related temperature sensing method
05/15/2012US8179733 Semiconductor integrated circuit device
05/15/2012US8179721 Non-volatile memory device with both single and multiple level cells
05/15/2012US8179720 NAND flash memory
05/15/2012US8179719 Systems and methods for improving error distributions in multi-level cell memory systems
05/15/2012US8179717 Maintaining integrity of preloaded content in non-volatile memory during surface mounting
05/15/2012US8179716 Non-volatile programmable logic gates and adders
05/15/2012US8179715 8T SRAM cell with four load transistors
05/15/2012US8179714 Nonvolatile storage device and method for writing into memory cell of the same
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