Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
02/2012
02/08/2012EP1819048B1 Semiconductor device employing dynamic circuit
02/08/2012EP1517383B1 Magnetoresistive device and magnetic memory device
02/08/2012CN1921005B 基于应变SiGe沟道的高速、高抗辐照的铁电存储器 Based strained SiGe channel high-speed, high resistance to radiation ferroelectric memory
02/08/2012CN1677564B 半导体存储器件 The semiconductor memory device
02/08/2012CN102349139A Electronic devices formed of two or more substrates bonded together, electronic systems comprising electronic devices and methods of making electronic devices
02/08/2012CN102349110A Structure and method for fabricating cladded conductive lines in magnetic memories
02/08/2012CN102347072A Semiconductor device and method for operating same
02/08/2012CN102347071A Semiconductor memory apparatus and method for discharging wordlines thereof
02/08/2012CN102347070A Charge recycling circuit
02/08/2012CN102347069A Programming method for multi-layered flash memory array and switching control method thereof
02/08/2012CN102347068A Semiconductor system and data training method thereof
02/08/2012CN102347067A Precharging circuit and semiconductor memory device including same
02/08/2012CN102347066A Integrated circuit and integrated circuit method
02/08/2012CN102347065A Integrated circuit, device and manufacture method thereof
02/08/2012CN101677016B 一种双端口静态随机存取存储器单元 A dual-port static random access memory cell
02/08/2012CN101465157B 用于1t1c铁电存储器的动态自适应参考产生电路 Dynamic adaptive for 1t1c ferroelectric memory reference generating circuit
02/08/2012CN101447223B 数据存取时间降低的半导体存储装置 Data access time of a semiconductor memory device to reduce the
02/08/2012CN101127240B 降低非易失性存储器存储元件间耦合效应的方法 Reduce inter-volatile memory storage element method for coupling effects
02/07/2012US8112608 Variable-width memory
02/07/2012US8111558 pFET nonvolatile memory
02/07/2012US8111556 Nonvolatile memory device and method of operating the same
02/07/2012US8111554 Starting program voltage shift with cycling of non-volatile memory
02/07/2012US8111553 Non-volatile semiconductor memory device in which program disturb is reduced and method of programming the same
02/07/2012US8111552 Offset non-volatile storage
02/07/2012US8111549 Dynamic wordline start voltage for nand programming
02/07/2012US8111548 Programming non-volatile storage using binary and multi-state programming processes
02/07/2012US8111547 Multi-bit flash memory and reading method thereof
02/07/2012US8111546 Optical ovonic threshold switch
02/07/2012US8111545 Phase-change memory device and firing method for the same
02/07/2012US8111544 Programming MRAM cells using probability write
02/07/2012US8111543 Semiconductor memory device
02/07/2012US8111542 8T low leakage SRAM cell
02/07/2012US8111541 Method of a multi-level cell resistance random access memory with metal oxides
02/07/2012US8111540 Semiconductor memory device
02/07/2012US8111539 Smart detection circuit for writing to non-volatile storage
02/07/2012US8111538 Semiconductor memory device
02/07/2012US8111537 Semiconductor memory
02/07/2012US8110476 Memory cell that includes a carbon-based memory element and methods of forming the same
02/02/2012WO2012015754A2 Latching circuit
02/02/2012WO2012015457A1 Systems and methods for implementing a programming sequence to enhance die interleave
02/02/2012WO2012014790A1 Semiconductor device
02/02/2012WO2012014603A1 Semiconductor device and data processing system
02/02/2012WO2012014132A1 Writeable magnetic element
02/02/2012WO2012014131A1 Magnetic memory element
02/02/2012US20120026813 Semiconductor device changing an active time-out time interval
02/02/2012US20120026798 Semiconductor nonvolatile memory device
02/02/2012US20120026793 Nonvolatile Memory Cell With Extended Well
02/02/2012US20120026787 Semiconductor device and method for driving the same
02/02/2012US20120026786 Write operation for phase change memory
02/02/2012US20120026785 Non-Volatile Magnetic Memory Element with Graded Layer
02/02/2012US20120026784 Random number generator
02/02/2012US20120026783 Latching Circuit
02/02/2012US20120026782 Semiconductor memory device
02/02/2012US20120026781 Resistive memory and method
02/02/2012US20120026780 Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices
02/02/2012US20120026779 Nonvolatile memories and reconfigurable circuits
02/02/2012US20120026778 Semiconductor storage device
02/02/2012US20120026777 Variable-resistance memory device
02/02/2012US20120026776 Memory resistor having plural different active materials
02/02/2012DE102006060400B4 Speichervorrichtung sowie Verfahren zum Herstellen derselben Memory device and methods for manufacturing the same
02/01/2012EP2024977B1 Method and apparatus for a dummy sram cell
02/01/2012CN1380660B 控制电路和半导体存储器装置 A control circuit and a semiconductor memory device
02/01/2012CN102341861A Semiconductor memory and method for operating the semiconductor memory
02/01/2012CN102339640A Static random access memory and static random access memory method
02/01/2012CN102339639A Word line decoder, memory device and method of configuring a layout of a circuit
02/01/2012CN102339638A STRAM with electronically reflective insulative spacer
02/01/2012CN102339636A Semiconductor memory device and method of driving the same
02/01/2012CN101127236B 存储单元电路 Memory cell circuit
01/2012
01/31/2012US8107304 Distributed write data drivers for burst access memories
01/31/2012US8107301 Memory controller
01/31/2012US8107300 Non-volatile semiconductor memory device comprising capacitive coupling program inhibit circuitry
01/31/2012US8107298 Non-volatile memory with fast binary programming and reduced power consumption
01/31/2012US8107295 Nonvolatile memory device and read method thereof
01/31/2012US8107290 Memory cell structure, a memory device employing such a memory cell structure, and an integrated circuit having such a memory device
01/31/2012US8107289 Nonvolatile memory device
01/31/2012US8107285 Read direction for spin-torque based memory device
01/31/2012US8107284 Nonvolatile memory device using a variable resistive element
01/31/2012US8107283 Method for setting PCRAM devices
01/31/2012US8107282 Asymmetric write current compensation
01/31/2012US8107281 Magnetoresistive element and magnetic memory
01/31/2012US8107280 Word line voltage control in STT-MRAM
01/31/2012US8107279 Semiconductor integrated circuit and manufacturing method therefor
01/31/2012US8107278 Semiconductor storage device
01/31/2012US8107277 Resistance-changing memory device
01/31/2012US8107276 Resistive memory devices having a not-and (NAND) structure
01/31/2012US8107275 Nonvolatile memory device using variable resistive element
01/31/2012US8107274 Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory device
01/31/2012US8107273 Integrated circuits having programmable metallization cells (PMCs) and operating methods therefor
01/31/2012US8107272 Nonvolatile semiconductor memory device, and writing method, reading method and erasing method of nonvolatile semiconductor memory device
01/31/2012US8106677 Signal transmitting device suited to fast signal transmission
01/26/2012WO2012012261A1 Programming non-volatile memory with bit line voltage step up
01/26/2012WO2012011161A1 Semiconductor storage device
01/26/2012WO2011146364A3 Joint encoding of logical pages in multi-page memory architecture
01/26/2012US20120023281 Single-chip microcomputer
01/26/2012US20120020152 Writable Magnetic Memory Element
01/26/2012US20120020151 Storage apparatus and method of manufacturing the same
01/26/2012US20120020150 Integrated Circuits With Phase Change Devices
01/26/2012US20120020149 Semiconductor device
01/26/2012US20120020148 Multi-bit stram memory cells
01/26/2012US20120020147 Magnetic memory element, magnetic memory device, information recording/reproducing apparatus