Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2012
03/29/2012US20120075914 Low Read Current Architecture For Memory
03/29/2012US20120075913 Non-volatile semiconductor memory device
03/29/2012US20120075912 Nonvolatile semiconductor memory device
03/29/2012US20120075911 Semiconductor memory device
03/29/2012US20120075910 Semiconductor integrated circuit
03/29/2012US20120075909 Semiconductor memory device
03/29/2012US20120075908 Resistive Random Access Memory and Verifying Method Thereof
03/29/2012US20120075907 Resistor structure for a non-volatile memory device and method
03/29/2012US20120075906 Resistance Based Memory Having Two-Diode Access Device
03/29/2012US20120075905 Semiconductor memory device and semiconductor integrated circuit
03/29/2012DE10253870B4 Halbleiterspeicherbauelement und Bitleitungsabtastverfahren The semiconductor memory device and Bitleitungsabtastverfahren
03/29/2012DE102007005709B4 Takt- und Datenrückgewinnungsschaltung mit Verstärkungsregelung Clock and data recovery circuit with automatic gain control
03/28/2012EP2434544A1 Integrated circuit
03/28/2012EP2434494A1 Integrated circuit devices and methods
03/28/2012EP2434493A1 Integrated circuit devices and methods
03/28/2012EP2434492A1 Memory cells having a row-based read and/or write support circuitry
03/28/2012CN1628356B Reducing the effect of write disturbs in polymer memories
03/28/2012CN102396031A St-ram cells with perpendicular anisotropy
03/28/2012CN102394104A Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits
03/28/2012CN102394103A Single-ended bit line write-in circuit
03/28/2012CN102394102A Close threshold power supply voltage SRAM unit with virtual address structure
03/28/2012CN102394101A Memory device with adaptive capacity
03/28/2012CN102394099A Non- volatile semiconductor memory with page erase
03/28/2012CN102394095A AC sensing for a resistive memory
03/28/2012CN101728483B Dielectric-sandwiched pillar memory device
03/28/2012CN101577140B Memory device and operating method thereof
03/28/2012CN101504864B Multi-level unit programming methods and integrated circuit apparatus
03/28/2012CN101331552B Memory system for reducing current consumption and method thereof
03/28/2012CN101238523B Method for multilevel programming of phase change memory cells using a percolation algorithm
03/28/2012CN101221811B Multi-bit resistive memory
03/27/2012US8144520 Non-volatile memory device and method of reading data in a non-volatile memory device
03/27/2012US8144515 Interleaved flash storage system and method
03/27/2012US8144514 One-transistor floating-body DRAM cell device with non-volatile function
03/27/2012US8144513 Non-volatile semiconductor memory
03/27/2012US8144512 Data transfer flows for on-chip folding
03/27/2012US8144510 Method and system for programming multi-state memory
03/27/2012US8144509 Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size
03/27/2012US8144508 Memory reading method for resistance drift mitigation
03/27/2012US8144507 Method of measuring a resistance of a resistive memory device
03/27/2012US8144506 Cross-point memory devices, electronic systems including cross-point memory devices and methods of accessing a plurality of memory cells in a cross-point memory array
03/27/2012US8144505 Nonvolatile memory devices supporting memory cells having different bit storage levels and methods of operating the same
03/27/2012US8144504 Method of operating magnetic random access memory device
03/27/2012US8144503 Information storage device and method of operating the same
03/27/2012US8144502 Static random access memory
03/27/2012US8144501 Read/write margin improvement in SRAM design using dual-gate transistors
03/27/2012US8144500 Semiconductor memory device
03/27/2012US8144499 Variable resistance memory device
03/27/2012US8144498 Resistive-switching nonvolatile memory elements
03/27/2012US8143684 Magnetoresistive element
03/27/2012US8143610 Semiconductor phase-change memory device
03/22/2012WO2012036734A2 Spin torque transfer memory cell structures and methods
03/22/2012WO2012036733A2 Spin torque transfer memory cell structures and methods
03/22/2012WO2012036728A2 Spin torque transfer memory cell structures and methods
03/22/2012WO2012036282A1 Magnetoresistive element and magnetic random-access memory
03/22/2012WO2011150170A3 Structures and methods for a field-reset spin-torque mram
03/22/2012US20120072682 Detection circuit for mixed asynchronous and synchronous memory operation
03/22/2012US20120072653 Memory device with user configurable density/performance
03/22/2012US20120069692 Semiconductor device
03/22/2012US20120069670 Semiconductor Integrated Circuit Device for Driving Liquid Crystal Display
03/22/2012US20120069650 Sub-threshold memory cell circuit with high density and high robustness
03/22/2012US20120069649 Non-uniform switching based non-volatile magnetic based memory
03/22/2012US20120069648 Spin torque transfer memory cell structures and methods
03/22/2012US20120069647 Spin torque transfer memory cell structures and methods
03/22/2012US20120069646 Spin torque transfer memory cell structures and methods
03/22/2012US20120069645 Multiple bit phase change memory cell
03/22/2012US20120069644 Replaceable, precise-tracking reference lines for memory products
03/22/2012US20120069643 Non-uniform switching based non-volatile magnetic based memory
03/22/2012US20120069642 Magnetoresistive element and magnetic random access memory
03/22/2012US20120069641 Magnetic memory
03/22/2012US20120069640 Magnetoresistive element and magnetic memory
03/22/2012US20120069639 Semiconductor storage device
03/22/2012US20120069638 Semiconductor device
03/22/2012US20120069637 Semiconductor memory device and semiconductor device
03/22/2012US20120069636 Static random access memory (sram) having bit cells accessible by separate read and write paths
03/22/2012US20120069635 Capacity and density enhancement circuit for sub-threshold memory unit array
03/22/2012US20120069634 Semiconductor memory device and method for inspecting the same
03/22/2012US20120069633 Nonvolatile storage device and method for writing into the same
03/22/2012US20120069632 Current control, memory element, memory device, and production method for current control element
03/22/2012US20120069631 Memory element and memory device
03/22/2012US20120069630 Write verify method for resistive random access memory
03/22/2012US20120069629 Semiconductor memory device
03/22/2012US20120069628 Nonvolatile semiconductor memory device and method of controlling the same
03/22/2012US20120069627 Nonvolatile semiconductor memory device
03/22/2012US20120069626 Semiconductor memory device
03/22/2012US20120069625 Resistance change element and resistance change memory
03/22/2012US20120069624 Reactive metal implated oxide based memory
03/22/2012US20120069623 Ferroelectric memory
03/22/2012US20120069622 Sector Array Addressing for ECC Management
03/22/2012US20120069621 Integrated Circuits Using Non Volatile Resistivity Sensitive Memory For Emulation Of Embedded Flash Memory
03/22/2012US20120068141 Silver-selenide/chalcogenide glass stack for resistance variable memory
03/21/2012EP2430675A1 Magnetoelectronic components and measurement method
03/21/2012EP2430661A1 Magnetic tunnel junction device and fabrication
03/21/2012EP2430634A2 Method to calibrate start values for write leveling in a memory system
03/21/2012EP2418647A9 Sense amplifier with adjustale back bias
03/21/2012CN1969338B 存储器 Memory
03/21/2012CN1963945B Semiconductor memory device and method for driving semiconductor memory device
03/21/2012CN1956338B DLL circuit and semiconductor device incorporating the same
03/21/2012CN1902709B Dynamic random access memory, storage device, equipment and method
03/21/2012CN1791941B Read and erase verify methods and circuits suitable for low voltage non-volatile memories
03/21/2012CN1783338B synchronization storage device, operation method thereof, and storage system containing the same
1 ... 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 ... 761