Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2012
06/20/2012CN101542631B Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches
06/20/2012CN101501782B Non-volatile memory with controlled program/erase
06/20/2012CN101405812B Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
06/20/2012CN101241755B Semiconductor device using magnetic domain wall moving and method for manufacturing the same
06/20/2012CN101055761B Semiconductor storage device
06/19/2012US8205056 Memory controller for controlling write signaling
06/19/2012US8205038 Flash memory accessing apparatus and accessing method thereof
06/19/2012US8203896 Memory chip and method for operating the same
06/19/2012US8203893 Write current compensation using word line boosting circuitry
06/19/2012US8203888 Non-volatile semiconductor storage device
06/19/2012US8203887 Nonvolatile semiconductor storage device
06/19/2012US8203881 Nonvolatile memory device, method of operating nonvolatile memory device and memory system including nonvolatile memory device
06/19/2012US8203880 Binary logic utilizing MEMS devices
06/19/2012US8203879 Non-volatile memory and operation method thereof
06/19/2012US8203878 Non-volatile memory devices and programming methods for the same
06/19/2012US8203877 Non-volatile semiconductor memory device capable of preventing over-programming
06/19/2012US8203875 Anti-parallel diode structure and method of fabrication
06/19/2012US8203874 Staggered magnetic tunnel junction
06/19/2012US8203873 Rectifying element for a crosspoint based memory array architecture
06/19/2012US8203872 Method and apparatus for accessing a multi-mode programmable resistance memory
06/19/2012US8203871 Reconfigurable magnetic logic device using spin torque
06/19/2012US8203870 Flux programmed multi-bit magnetic memory
06/19/2012US8203869 Bit line charge accumulation sensing for resistive changing memory
06/19/2012US8203868 Semiconductor memory device
06/19/2012US8203867 8T SRAM cell with one word line
06/19/2012US8203866 Capacitor-less memory cell, device, system and method of making same
06/19/2012US8203865 Non-volatile memory cell with non-ohmic selection layer
06/19/2012US8203864 Memory cell and methods of forming a memory cell comprising a carbon nanotube fabric element and a steering element
06/19/2012US8203863 Nonvolatile memory cells and nonvolatile memory devices including the same
06/19/2012US8203862 Voltage reference generation with selectable dummy regions
06/19/2012US8203193 Magnetic random access memory and manufacturing method of the same
06/19/2012US8203192 STRAM with compensation element and method of making the same
06/14/2012WO2012079063A1 Embedded dram having low power self-correction capability
06/14/2012WO2012078456A1 Phase change material cell with piezoelectric or ferroelectric stress inducer liner
06/14/2012WO2012078357A2 Memory device refresh commands on the fly
06/14/2012WO2012076871A1 Magnectic structure
06/14/2012US20120151197 Information processing device
06/14/2012US20120151131 Memory system with a programmable refresh cycle
06/14/2012US20120147673 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
06/14/2012US20120147668 Diode and Memory Device Having a Diode
06/14/2012US20120147667 Variable resistance memory programming
06/14/2012US20120147666 Phase change material cell with stress inducer liner
06/14/2012US20120147665 Predictive Thermal Preconditioning and Timing Control for Non-Volatile Memory Cells
06/14/2012US20120147664 Non-volatile memory device and method for controlling the same
06/14/2012US20120147663 Nonvolatile memory with enhanced efficiency to address asymetric nvm cells
06/14/2012US20120147662 Semiconductor Integrated Circuit and Manufacturing Method Thereof
06/14/2012US20120147661 Data security for dynamic random access memory at power-up
06/14/2012US20120147660 Preservation Circuit And Methods To Maintain Values Representing Data In One Or More Layers Of Memory
06/14/2012US20120147659 Bidirectional Non-Volatile Memory Array Architecture
06/14/2012US20120147658 System of measuring a resistance of a resistive memory device
06/14/2012US20120147657 Programming reversible resistance switching elements
06/14/2012US20120147656 Memory element and memory device
06/14/2012US20120147655 Non-volatile memory device and method for programming the same
06/14/2012US20120147654 Ferroelectric Random Access Memory with Single Plate Line Pulse During Read
06/14/2012DE19655033B9 Halbleitereinrichtung Semiconductor device
06/13/2012EP2462590A1 Programming memory with reduced pass voltage disturb and floating gate to-control gate leakage
06/13/2012EP1741107B1 Refreshing data stored in a flash memory
06/13/2012CN202275603U Device and chip for memory writing operation
06/13/2012CN1864228B Integrated circuit including magnetic field shaping conductor and its manufacture method
06/13/2012CN1838321B Nonvolatile memory devices having enhanced bit line and/or word line driving capability
06/13/2012CN1717742B Current re-routing scheme for serial-programmed MRAM
06/13/2012CN102496385A Spike timing activity conversion circuit
06/13/2012CN102496384A Noise current compensation circuit
06/13/2012CN101819813B Method for performing cache reading
06/13/2012CN101640251B Bottom electrode structural improvement of storage unit of phase-change memory and manufacturing implementation method
06/13/2012CN101615426B A programmable conductor random access memory and a method for writing thereto
06/13/2012CN101587936B Resistive random access memory based on bismuth iron thin film system and manufacturing method thereof
06/13/2012CN101562042B Sensitive amplifier suitable for random memory
06/13/2012CN101527166B Nonvolatile magnetic memory device
06/13/2012CN101512662B Compensating for coupling of adjacent memory element in non-volatile memory based on sensing a neighbor using coupling
06/13/2012CN101479852B Capacitorless one-transistor floating-body dram cell and method of forming the same
06/13/2012CN101329910B Phase change memory device
06/13/2012CN101329899B Semiconductor device that uses a plurality of source voltages
06/13/2012CN101233577B A non-volatile memory and method for programming cells in the non-volatile memory devices
06/13/2012CN101140802B Phase change random access memory and related methods of operation
06/13/2012CN101107671B Memory sensing circuit and method for low voltage operation
06/13/2012CN101071631B Method and device for multiple banks read and data compression for back end test
06/13/2012CN101042931B Semiconductor storage device
06/13/2012CN101026006B Latency control circuit and method thereof and an semiconductor memory device including the circuit
06/12/2012US8200889 Variable space page mapping method and apparatus for flash memory device
06/12/2012US8199859 Integrating receiver with precharge circuitry
06/12/2012US8199596 Semiconductor memory device having a plurality of sense amplifier circuits
06/12/2012US8199584 Nonvolatile memory device for preventing program disturbance and method of programming the nonvolatile memory device
06/12/2012US8199580 Memory device that selectively stores holes
06/12/2012US8199575 Memory cell array of memory
06/12/2012US8199574 Apparatus comparing verified data to original data in the programming of a memory array
06/12/2012US8199573 Nonvolatile semiconductor memory device
06/12/2012US8199572 Non-volatile memory with both single and multiple level cells
06/12/2012US8199570 Multi-bit memory with selectable magnetic layer
06/12/2012US8199569 Diode assisted switching spin-transfer torque memory unit
06/12/2012US8199568 Method and apparatus for a disk damper including an enclosing flow chamber wall for a hard disk drive
06/12/2012US8199567 Multiple level cell phase-change memory devices having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices
06/12/2012US8199566 Write performance of phase change memory using set-pulse shaping
06/12/2012US8199565 Magnetic random access memory with dual spin torque reference layers
06/12/2012US8199564 Thermally assisted multi-bit MRAM
06/12/2012US8199563 Transmission gate-based spin-transfer torque memory unit
06/12/2012US8199562 Memory cell with enhanced read and write sense margins
06/12/2012US8199561 Phase change memory
06/12/2012US8199560 Memory device comprising select gate including carbon allotrope
06/12/2012US8199559 Semiconductor device, semiconductor memory device and data processing system comprising semiconductor system
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