Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2012
05/30/2012CN1574079B Memory unit and semiconductor device
05/30/2012CN1555559B Selective operation of a multi-state non-volatile memory system in a binary mode
05/30/2012CN102484477A Die location compensation
05/30/2012CN102483953A 检测对非易失性储存器的编程的完成 Detection of the non-volatile memory programming is completed
05/30/2012CN102483949A Preloading data into a flash storage device
05/30/2012CN102479918A 形成磁性隧道结结构和形成磁性随机存取存储器的方法 Forming a magnetic tunnel junction structure and a method of forming a magnetic random access memory
05/30/2012CN102479546A 一种对电阻存储器进行编程的电路 Kind of resistance memory programming circuit
05/30/2012CN102479545A 一种6t cmos sram单元 One kind of 6t cmos sram cell
05/30/2012CN102479544A 半导体存储器件和包括它的半导体存储系统 The semiconductor memory device and a semiconductor memory system including its
05/30/2012CN102479543A 验证半导体存储器器件的多周期自刷新操作及其测试 Verify semiconductor memory devices and multi-cycle test self-refresh operation
05/30/2012CN102479542A Magnetic memory cell with multi-level cell (mlc) data storage capability
05/30/2012CN102479541A Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film
05/30/2012CN101814316B Method for configuring static storage-type field programmable gate array
05/30/2012CN101675514B Tungsten digitlines and methods of forming and operating the same
05/30/2012CN101660119B Compound phase-change material target and preparation method thereof
05/30/2012CN101582293B Memory element and method for controlling word line signal in power supply starting up/cutting off program
05/30/2012CN101488366B Semiconductor device
05/30/2012CN101425325B Circuit and method for controlling termination impedance
05/30/2012CN101383181B Semiconductor memory device
05/30/2012CN101366091B Method for programming of multi-state non-volatile memory using smart verify
05/30/2012CN101278352B Daisy chain cascading devices and method
05/30/2012CN101236779B Storage device and its programming method
05/30/2012CN101188138B Dynamic semiconductor storage device and method for operating same
05/30/2012CN101180682B Method with power-saving read and program-verify operations in non-volatile memory
05/30/2012CN101145390B Data writing and reading method for memory device employing magnetic domain wall movement
05/30/2012CN101101964B Non-volatile memory device including a variable resistance material
05/30/2012CN101075476B Semiconductor memory apparatus and method of driving the same
05/30/2012CN101073125B Semiconductor devices
05/30/2012CN101030622B Nonvolatile memory device and nonvolatile memory array including the same
05/29/2012USRE43417 Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
05/29/2012US8190982 Error-tolerant multi-threaded memory systems with reduced error accumulation
05/29/2012US8189423 256 Meg dynamic random access memory
05/29/2012US8189399 EEPROM having single gate structure and method of operating the same
05/29/2012US8189397 Retention in NVM with top or bottom injection
05/29/2012US8189393 Nonvolatile memory device with incremental step pulse programming
05/29/2012US8189389 Nonvolatile semiconductor memory device with a voltage setting circuit for a step-up shift test
05/29/2012US8189388 Fuse circuit and flash memory device having the same
05/29/2012US8189386 Non-volatile memory device and associated programming method using error checking and correction (ECC)
05/29/2012US8189385 Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array
05/29/2012US8189379 Reduction of read disturb errors in NAND FLASH memory
05/29/2012US8189377 Semiconductor device
05/29/2012US8189376 Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
05/29/2012US8189375 Methods of forming memory cells and methods of forming programmed memory cells
05/29/2012US8189374 Memory device including an electrode having an outer portion with greater resistivity
05/29/2012US8189373 Phase change memory device using a multiple level write voltage
05/29/2012US8189372 Integrated circuit including electrode having recessed portion
05/29/2012US8189371 Nonvolatile semiconductor memory device and method for driving same
05/29/2012US8189370 Magnetic recording element, magnetic memory cell, and magnetic random access memory
05/29/2012US8189369 Semiconductor device
05/29/2012US8189368 Cell structure for dual port SRAM
05/29/2012US8189367 Single event upset hardened static random access memory cell
05/29/2012US8189366 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
05/29/2012US8189365 Semiconductor device configuration method
05/29/2012US8189364 Charge retention structures and techniques for implementing charge controlled resistors in memory cells and arrays of memory
05/29/2012US8189363 Resistance change memory
05/29/2012US8189357 Memory with multiple reference cells
05/29/2012US8188569 Phase change random access memory device with transistor, and method for fabricating a memory device
05/29/2012US8188554 Memory device having movable electrode and method of manufacturing the memory device
05/29/2012US8188534 Semiconductor memory device
05/24/2012WO2012068309A2 Bipolar spin-transfer switching
05/24/2012WO2012067920A1 Double -gated dram transistors and methods of fabricating and operating the same
05/24/2012WO2012067739A1 Word line kicking voltage when sensing non-volatile storage cell
05/24/2012WO2012067661A1 Method and circuit for switching a memristive device in an array
05/24/2012WO2012067660A1 Method and circuit for switching a memristive device
05/24/2012US20120127817 Semiconductor device having reset function
05/24/2012US20120127816 Semiconductor device having hierarchical bit line structure
05/24/2012US20120127792 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
05/24/2012US20120127790 Adjustable write bins for multi-level analog memories
05/24/2012US20120127789 Storage node, phase change memory device and methods of operating and fabricating the same
05/24/2012US20120127788 MRAM Cells and Circuit for Programming the Same
05/24/2012US20120127787 Spin-transfer torque memory non-destructive self-reference read method
05/24/2012US20120127786 Flux programmed multi-bit magnetic memory
05/24/2012US20120127785 Using a Nearby Cell to Provide Field Assisted Switching in a Magnetic Memory Array
05/24/2012US20120127784 Semiconductor storage device
05/24/2012US20120127783 SRAM Cell for Single Sided Write
05/24/2012US20120127782 Static ram
05/24/2012US20120127781 Semiconductor memory device
05/24/2012US20120127780 Memory resistor adjustment using feedback control
05/24/2012US20120127779 Re-writable Resistance-Switching Memory With Balanced Series Stack
05/24/2012US20120127778 Memory device
05/24/2012US20120127777 Method to improve ferroelectric memory performance and reliability
05/24/2012US20120127776 Ferroelectric memory device
05/24/2012US20120126214 Methods and intermediates for the synthesis of dipyrrin-substituted porphyrinic macrocycles
05/24/2012DE112010002919T5 Modulare dreidimensionale Kondensatormatrix Modular three-dimensional capacitor array
05/23/2012EP2455943A1 Method and system for data storage
05/23/2012EP2455942A2 Memory write error correction circuit
05/23/2012EP2455771A1 Measurement device and measurement method
05/23/2012EP1738373B1 Addressing data within dynamic random access memory
05/23/2012CN1983619B Data read/write device
05/23/2012CN1914688B Molecular memory devices and method for reading or writing, memory unit, memory array and device
05/23/2012CN1877741B Method for analyzing critical state mutual action of mult-bit memory unit
05/23/2012CN1714402B Magnetic storage unit using ferromagnetic tunnel junction element
05/23/2012CN1630911B Semiconductor device for partial page programming of multi level flash
05/23/2012CN1452176B Semiconductor memory delay circuit
05/23/2012CN102473453A Semiconductor storage device
05/23/2012CN102473452A 半导体存储装置 The semiconductor memory device
05/23/2012CN102473451A 晶体管系存储器单元及相关的操作方法 A transistor-based memory cell and the related method of operation
05/23/2012CN102473450A Magnetic stack having reference layers with orthogonal magnetization orientation directions
05/23/2012CN102473449A 静磁场辅助的阻性感测元件 The static magnetic field assisted resistive sensing element
05/23/2012CN102473448A 具有电阻性感测元件块擦除和单向写入的非易失性存储器阵列 Has a resistive sensing element unidirectional block erase and write nonvolatile memory array
1 ... 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 ... 761