Patents
Sitemap › G11 - Information storage › G11C - Static stores
More topics under "G11C - Static stores" (278,845)
G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
G11C 14 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down (1,872)
G11C 15 - Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores (3,555)
G11C 16 - Erasable programmable read-only memories (44,373)
G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
G11C 19 - Digital stores in which the information is moved stepwise, e.g. shift registers (6,160)
G11C 21 - Digital stores in which the information circulates (125)
G11C 23 - Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor (468)
G11C 25 - Digital stores characterised by the use of flowing media; Storage elements therefor (19)
G11C 27 - Electric analogue stores, e.g. for storing instantaneous values (3,965)
G11C 29 - Checking stores for correct operation; Testing stores during standby or offline operation (30,524)
G11C 5 - Details of stores covered by group (20,391)
G11C 7 - Arrangements for writing information into, or reading information out from, a digital store (53,197)
G11C 8 - Arrangements for selecting an address in a digital store (19,368)
G11C 99 - Subject matter not provided for in other groups of this subclass (24)
Patents for G11C - Static stores (462)
02/2015
02/10/2015US8951861 Methods of making a high-density nonvolatile memory
08/2014
08/05/2014US8797798 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
05/2014
05/15/2014US20140133234 Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
04/2014
04/22/2014US8706949 Monolithic read-while-write flash memory device
11/2013
11/26/2013CA2495759C Method and system of external data storage
08/2013
08/06/2013US8503240 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
06/2013
06/27/2013US20130164921 High-density nonvolatile memory and methods of making the same
06/06/2013DE10196802B4 Rauschunterdrückung für DRAM-Architekturen mit offener Bitleitung Noise Reduction for DRAM architectures open bit line
02/2013
02/26/2013US8383478 High-density nonvolatile memory and methods of making the same
11/2012
11/22/2012US20120294084 Flash EEPROM System with Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
09/2012
09/05/2012CN101199021B A method in the fabrication of a ferroelectric memory device
07/2012
07/17/2012US8223547 Flash EEprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
04/2012
04/04/2012CN101120299B 异步抖动减小技术 Asynchronous jitter reduction techniques
01/2012
01/31/2012US8108588 Monolithic read-while-write flash memory device
01/25/2012EP1614034B1 Initialization and update of software and/or firmware in electronic devices
01/25/2012CN101329904B Open bit line DRAM and method for reducing noise for open bit line DRAM operation
11/2011
11/24/2011US20110287615 High-density nonvolatile memory and methods of making the same
10/2011
10/05/2011EP2372559A2 Dynamic memory supporting simultaneous refresh and data-access transactions
10/05/2011EP2372558A2 Dynamic memory supporting simultaneous refresh and data-access transactions
09/2011
09/07/2011EP1894203B1 A method in the fabrication of a ferroelectric memory device
08/2011
08/24/2011CN101263580B Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same
08/23/2011US8004033 High-density nonvolatile memory
06/2011
06/09/2011US20110134696 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
03/2011
03/02/2011EP2290555A1 Method and apparatus for write protecting a gaming storage medium
02/2011
02/23/2011CN101330086B Noise suppression for open bit line DRAM architectures
02/15/2011US7889590 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
02/15/2011US7889554 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
02/15/2011US7888757 Magnetic random access memory (MRAM) device on thermally-sensitive substrate
12/2010
12/29/2010EP1639601B1 Asynchronous jitter reduction technique
11/2010
11/23/2010US7839701 Low voltage operation DRAM control circuits
10/2010
10/12/2010US7814269 Method and system of externalising / internalising a data record that allow processing of part or all of the record
09/2010
09/15/2010CN1655133B Method and system of external data storage
08/2010
08/25/2010EP1782428B1 An organic ferroelectric or electret memory circuit and a method for making same
06/2010
06/16/2010CN101023493B An organic ferroelectric or electret memory circuit and a method for making same
06/08/2010US7733693 Semiconductor memory device and method of operating same
05/2010
05/05/2010CN1906697B Method for operating a data storage apparatus employing passive matrix addressing
03/2010
03/18/2010US20100067298 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
03/09/2010US7674686 Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same
02/2010
02/25/2010US20100049910 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
01/2010
01/12/2010US7646667 Flash EEprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
01/12/2010US7646666 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
01/12/2010US7646629 Method for operating a data storage apparatus employing passive matrix addressing
12/2009
12/16/2009EP1647030B1 Asynchronous static random access memory
12/15/2009US7633808 Flash memories with adaptive reference voltages
11/2009
11/19/2009US20090285981 Method in the fabrication of a ferroelectric memory device
10/2009
10/22/2009US20090261343 High-density nonvolatile memory and methods of making the same
08/2009
08/12/2009EP1661137B1 Low voltage operation dram control circuits
08/04/2009US7570508 Method and apparatus for reducing soft errors
07/2009
07/21/2009US7565480 Dynamic memory supporting simultaneous refresh and data-access transactions
07/15/2009CN100514487C Magnetoelectronics information device having a compound magnetic free layer
07/09/2009US20090175082 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
07/09/2009US20090175080 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
07/08/2009CN100511474C Noise suppression for open bit line DRAM architectures
07/07/2009US7557405 High-density nonvolatile memory
06/2009
06/09/2009US7546423 Signal processing system control method and apparatus
06/04/2009WO2005006339A3 A scalable flash eeprom memory cell with notched floating gate and graded source region, and method of manufacturing the same
05/2009
05/13/2009CN101430668A Method and system of external data storage
05/12/2009US7532511 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
04/2009
04/28/2009US7525834 SRAM cell structure and circuits
04/22/2009CN100481261C Memory and method for prolonging the service life of the memory
04/16/2009US20090100446 Method and system of external data storage
04/08/2009EP1639601A4 Asynchronous jitter reduction technique
03/2009
03/25/2009EP1665274A4 Fowler-nordheim block alterable eeprom memory cell
03/25/2009CN100472661C Method of dual cell memory device operation for improved end-of-life read margin
02/2009
02/24/2009US7496728 Asynchronous jitter reduction technique
02/24/2009US7494896 Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer
02/18/2009EP1690260B1 Method for operating a data storage apparatus employing passive matrix addressing
02/12/2009US20090039345 Tunnel Junction Barrier Layer Comprising a Diluted Semiconductor with Spin Sensitivity
02/04/2009CN100458674C Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
01/2009
01/27/2009US7482624 Organic electronic circuit and method for making the same
01/21/2009CN100454574C Mirror image non-volatile memory cell transistor pairs with single poly layer
01/07/2009CN100449788C Magnetoresistive random acess memory device structures and methods for fabricating the same
12/2008
12/24/2008CN101330086A Noise suppression for open bit line DRAM architectures
12/24/2008CN101329904A Noise suppression for open bit line DRAM architectures
12/16/2008US7467284 Method and system of externalising/internalising data record that allow processing of part or all of the record
12/09/2008US7463516 Flash memories with adaptive reference voltages
12/03/2008EP1661143B1 Method and system for providing a programmable current source for a magnetic memory
09/2008
09/10/2008CN101263580A Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same
08/2008
08/28/2008US20080205114 Semiconductor memory device and method of operating same
08/27/2008EP1665272A4 Signal processing system control method and apparatus
08/14/2008US20080192546 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
08/05/2008US7407857 Method of making a scalable flash EEPROM memory cell with notched floating gate and graded source region
06/2008
06/26/2008US20080151609 Method for operating a data storage apparatus employing passive matrix addressing
06/12/2008US20080137412 Flash memories with adaptive reference voltages
06/11/2008EP1606820B1 Sense amplifier systems and a matrix-addressable memory device provided therewith
06/11/2008CN101199021A A method in the fabrication of a ferroelectric memory device
05/2008
05/13/2008US7372731 Flash memories with adaptive reference voltages
04/2008
04/24/2008US20080094907 Flash memories with adaptive reference voltages
04/23/2008EP1625589B1 Magnetoelectronics information device having a compound magnetic free layer
04/22/2008US7362613 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
04/15/2008US7359229 Semiconductor memory device and method of operating same
04/01/2008US7352612 Method for operating a data storage apparatus employing passive matrix addressing
03/2008
03/26/2008EP1903444A1 Method and system of external data storage
03/18/2008US7345906 Read method and sensing device
03/11/2008US7341911 Method of making EEPROM transistor pairs for block alterable memory
03/06/2008US20080055790 Transplanted magnetic random access memory (mram) devices on thermally-sensitive substrates using laser transfer and method of making the same
03/05/2008EP1894203A1 A method in the fabrication of a ferroelectric memory device
03/05/2008EP1665404A4 Multiple bit chalcogenide storage device
02/2008
02/21/2008US20080046636 Monolithic read-while-write flash memory device
02/21/2008US20080044930 Transplanted magnetic random access memory (mram) devices on thermally-sensitive substrates using laser transfer and method of making the same
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