Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2012
07/04/2012EP2471180A2 Die location compensation
07/04/2012EP2471069A1 Methods, devices, and systems for dealing with threshold voltage change in memory devices
07/04/2012EP2471067A2 Interruptible nand flash memory
07/04/2012EP2471066A1 Partial speed and full speed programming for non-volatile memory using floating bit lines
07/04/2012EP2342715B1 Stram with electronically reflective insulative spacer
07/04/2012CN1971761B Semiconductor memory device and method for operating the same
07/04/2012CN1933021B Sensing margin varying circuit and method thereof
07/04/2012CN1774766B Memory device with sense amplifier and self-timed latch and operation method
07/04/2012CN1658325B Memory device with different termination units for different signal frequencies
07/04/2012CN102549673A Programming memory with reduced pass voltage disturb and floating gate to-control gate leakage
07/04/2012CN102549672A Optimized page programming order for non-volatile memory
07/04/2012CN102544357A Method for manufacturing resistance transition type memory
07/04/2012CN102544352A Non-volatile memory cell with lateral pinning
07/04/2012CN102544013A Dynamic random access memory cell and array having vertical channel transistor
07/04/2012CN102544012A Storage unit with MOS (Metal Oxide Semiconductor) structure, array, memory and operating method thereof
07/04/2012CN102543847A Vertical transistor STRAM array
07/04/2012CN102543172A Control method applicable to resistance changing memory resistor of nerve cell circuit
07/04/2012CN102543171A Phase change memory with redundant circuit and redundancy method for phase change memory
07/04/2012CN102543170A Method for realizing low power consumption of phase change memory
07/04/2012CN102543169A Unified multilevel cell memory
07/04/2012CN102543168A Method for restraining impedance state fluctuation of resistance random access memory
07/04/2012CN102543167A Enhanced PF-CDPD (Pseudo-Footless Clock-and-Data Pre-charged Dynamic) AND gate circuit and log2 type matching line circuit
07/04/2012CN102543166A Sram including write assist circuit and method of operating same
07/04/2012CN102543165A Mode changing circuitry
07/04/2012CN102543164A Spacecraft DSP chip data protection method
07/04/2012CN102543163A Sense amplifier structure for semiconductor integrated circuit device
07/04/2012CN102543162A Micro-threaded memory
07/04/2012CN102543161A Semiconductor memory device and method of testing same
07/04/2012CN102543160A Semiconductor memory apparatus
07/04/2012CN102543159A Double data rate (DDR) controller and realization method thereof, and chip
07/04/2012CN102543158A Method and system for providing independent bank refresh for volatile memories
07/04/2012CN102543157A Double-bit-line sub-threshold storage unit circuit
07/04/2012CN102543156A Storage device and writing control method
07/04/2012CN101903868B Memory device and memory device control method
07/04/2012CN101847688B Method for decreasing discreteness of resistance value of resistance change memory
07/04/2012CN101783172B Phase change memory
07/04/2012CN101783171B Burst write method for phase change memory
07/04/2012CN101740716B Phase-change memory element and its forming method
07/04/2012CN101728412B Resistive memory array and cell
07/04/2012CN101727971B Integrated circuit structure
07/04/2012CN101677015B Static random access memory and forming and controlling method thereof
07/04/2012CN101640066B Memory controller and multi-memory system
07/04/2012CN101640065B Refresh controller and refresh control method used for embedded DRAM
07/04/2012CN101572122B Novel sram cell array structure
07/04/2012CN101540368B Memory cell and method for manufacturing a memory cell
07/04/2012CN101506898B Method and apparatus for passive element memory array incorporating reversible polarity word line and bit line decoders
07/04/2012CN101401078B Memory apparatus, its control method, its control program, memory card, circuit board, and electronic device
07/04/2012CN101355137B Phase-changing storage device and manufacture method thereof
07/04/2012CN101324863B Device and method for controlling synchronous static memory
07/04/2012CN101266834B Writing drive method and system for phase change memory
07/04/2012CN101252168B Phase change memory cell with heater and method for fabricating the same
07/04/2012CN101246734B Bias voltage generator and method generating bias voltage for semiconductor memory device
07/04/2012CN101236984B Integrated circuit with magnetic memory
07/04/2012CN101236780B Circuit design standard and implementation method for 3-D solid structure phase change memory chip
07/04/2012CN101192649B Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same
07/04/2012CN101136245B Semiconductor memory device
07/04/2012CN101131868B Latency counter
07/04/2012CN101064359B Non-volatile memory devices including variable resistance material
07/04/2012CN101064185B Memory
07/04/2012CN101051525B Semiconductor storage device
07/03/2012US8214616 Memory controller device having timing offset capability
07/03/2012US8213259 Non-volatile memory cell with resistive sense element block erase and uni-directional write
07/03/2012US8213244 Distributed write data drivers for burst access memories
07/03/2012US8213237 Charge pump and semiconductor device having the same
07/03/2012US8213235 Nonvolatile memory device
07/03/2012US8213233 Reduction of quick charge loss effect in a memory device
07/03/2012US8213228 Flash memory read performance
07/03/2012US8213227 4-transistor non-volatile memory cell with PMOS-NMOS-PMOS-NMOS structure
07/03/2012US8213226 Vertical transistor memory cell and array
07/03/2012US8213225 Methods, devices, and systems relating to memory cells having a floating body
07/03/2012US8213224 High density low power nanowire phase change material memory device
07/03/2012US8213223 Multi-level memory devices and methods of operating the same
07/03/2012US8213222 Magnetic tunnel junction with compensation element
07/03/2012US8213221 Magnetic shielding in magnetic multilayer structures
07/03/2012US8213220 Device and method of programming a magnetic memory element
07/03/2012US8213219 Transistor-based memory cell and related operating methods
07/03/2012US8213218 Optimized solid electrolyte for programmable metallization cell devices and structures
07/03/2012US8213217 Microelectronic programmable device and methods of forming and programming the same
07/03/2012US8213216 Shared bit line and source line resistive sense memory structure
07/03/2012US8213215 Resistive sense memory calibration for self-reference read method
07/03/2012US8213214 Storage device and information rerecording method
07/03/2012US8213213 Reference current generator for resistance type memory and method thereof
07/03/2012US8213212 Methods of making quantum dot films
07/03/2012US8213207 Printed board assembly movement detection
07/03/2012US8212230 Integrated circuits with phase change devices
06/2012
06/28/2012WO2012087986A2 Magnetic phase change logic
06/28/2012WO2012087815A1 Non-volatile memory and methods with soft-bit reads while reading hard bits with compensation for coupling
06/28/2012WO2012087805A2 Non-volatile memory and methods with asymmetric soft read points around hard read points
06/28/2012WO2012087803A2 Non-volatile memory and methods with reading soft bits in non uniform schemes
06/28/2012WO2012087586A2 Memory cell using bti effects in high-k metal gate mos
06/28/2012WO2012087569A1 Alternate page by page programming scheme
06/28/2012WO2012087473A2 Nor logic word line selection
06/28/2012WO2012087455A2 Hierarchical dram sensing
06/28/2012WO2012086138A1 Semiconductor memory device
06/28/2012WO2012085627A1 Method for operating a transistor, reconfigurable processing architecture and use of a restored broken down transistor for a multiple mode operation
06/28/2012US20120163111 Refresh control circuit and method for semiconductor memory device
06/28/2012US20120163106 Refresh control circuit and method for semiconductor memory device
06/28/2012US20120163091 Semiconductor memory device which stores plural data in a cell
06/28/2012US20120163090 Information recording/reproducing device
06/28/2012US20120163072 Non-volatile semiconductor memory cell with dual functions
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