Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2012
07/17/2012US8223552 Nonvolatile semiconductor memory device and method for driving the same
07/17/2012US8223549 NAND flash memory programming
07/17/2012US8223547 Flash EEprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
07/17/2012US8223545 Systems and methods for data page management of NAND flash memory arrangements
07/17/2012US8223544 Memory system, program method thereof, and computing system including the same
07/17/2012US8223542 Method of reading data in semiconductor memory device with charge accumulation layer
07/17/2012US8223540 Method and apparatus for double-sided biasing of nonvolatile memory
07/17/2012US8223539 GCIB-treated resistive device
07/17/2012US8223538 Semiconductor phast change memory using multiple phase change layers
07/17/2012US8223537 State machine sensing of memory cells
07/17/2012US8223536 Semiconductor memory device
07/17/2012US8223535 Phase-change memory device with discharge of leakage currents in deselected bitlines and method for discharging leakage currents in deselected bitlines of a phase-change memory device
07/17/2012US8223534 Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate
07/17/2012US8223533 Magnetoresistive effect device and magnetic memory
07/17/2012US8223532 Magnetic field assisted STRAM cells
07/17/2012US8223530 Variable-resistance memory device and its operation method
07/17/2012US8223529 Resistive memory devices, memory systems and methods of controlling input and output operations of the same
07/17/2012US8223528 Control method for memory cell
07/17/2012US8223527 Semiconductor device having memory array, method of writing, and systems associated therewith
07/12/2012WO2012094036A1 Magnetoresistive random access memory (mram) with integrated magnetic film enhanced circuit elements
07/12/2012US20120176853 Refresh control circuit, memory apparatus and refresh control method using the same
07/12/2012US20120176835 Temperature sensor, method of manufacturing the temperature sensor, semiconductor device, method of manufacturing the semiconductor device, and method of controlling the semiconductor device
07/12/2012US20120176834 Variable resistance nonvolatile memory device
07/12/2012US20120176833 Electronic device with a programmable resistive element and a method for blocking a device
07/12/2012US20120176832 Access Signal Adjustment Circuits and Methods for Memory Cells In a Cross-Point Array
07/12/2012US20120176831 Resistive Random Access Memory With Low Current Operation
07/12/2012US20120176830 Variable resistance memory devices using read mirror currents
07/12/2012US20120176829 Semiconductor memory device with ferroelectric device and refresh method thereof
07/12/2012US20120175718 Bipolar select device for resistive sense memory
07/12/2012DE4345604B3 Vorrichtung zur Kommunikation mit einem DRAM An apparatus for communicating with a DRAM
07/12/2012DE102005005584B4 1R1D-MRAM-Blockarchitektur 1R1D MRAM block architecture
07/12/2012DE102004059409B4 Magnetische Speichervorrichtung Magnetic storage device
07/12/2012DE102004055464B4 Vorrichtung und Verfahren zum Bereitstellen von Referenzströmen Apparatus and method for providing reference currents
07/11/2012EP2475100A2 Clock mode determination in a memory system
07/11/2012EP2474980A2 Thermo programmable resistor based ROM
07/11/2012EP2473999A1 Preloading data into a flash storage device
07/11/2012EP2188811B1 Reducing noise in semiconductor devices
07/11/2012CN1941195B Output driving device
07/11/2012CN1653551B Low standby power using shadow storage
07/11/2012CN1577605B Integrated circuit memory devices including programmed memory cells and programmable and erasable memory cells
07/11/2012CN102576568A Forecasting program disturb in memory by detecting natural threshold voltage distribution
07/11/2012CN102576566A Partial speed and full speed programming for non-volatile memory using floating bit lines
07/11/2012CN102571072A Programmable logic circuit with customizable configuration status
07/11/2012CN102569643A Heterogeneous design method for optimizing embedded STT- RAM (Spin-Torque Transfer Random Access Memory) performances and hardware consumption
07/11/2012CN102569642A Storage nodes, magnetic memory devices, and methods of manufacturing the same
07/11/2012CN102569362A Memory device, memory module and electronic device
07/11/2012CN102569334A RRAM (resistance random access memory) device and system
07/11/2012CN102568564A Combined SET (Single-Electron Transistor)/CMOS (Complementary Metal-Oxide Semiconductor) static storage unit based on NDR (Negative Differential Resistance) property
07/11/2012CN102568563A Internal voltage generation circuit and semiconductor integrated circuit
07/11/2012CN102568562A Stack package and method for selecting chip in stack package
07/11/2012CN102568561A Using a Nearby Cell to Provide Field Assisted Switching in a Magnetic Memory Array
07/11/2012CN101499498B Optical sensor element, image forming apparatus, electronic apparatus and storage element
07/11/2012CN101401106B Method of reducing electro-static discharge (esd) from conductors on insulators
07/11/2012CN101325213B Memory devices and methods of manufacturing the same as well as memory array and method of manufacturing the same
07/11/2012CN101276638B Semiconductor memory device using ferroelectric device and method for refresh thereof
07/11/2012CN101211656B Semiconductor memory device and programming method thereof
07/10/2012US8218386 Embedded memory databus architecture
07/10/2012US8218381 Programming memory with sensing-based bit line compensation to reduce channel-to-floating gate coupling
07/10/2012US8218372 Semiconductor storage device
07/10/2012US8218365 Flash memory device having dummy cells and method of operating the same
07/10/2012US8218364 Operation methods for memory cell and array for reducing punch through leakage
07/10/2012US8218362 Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same
07/10/2012US8218361 Data programming circuits and memory programming methods
07/10/2012US8218360 Phase-change and resistance-change random access memory devices and related methods of performing burst mode operations in such memory devices
07/10/2012US8218359 Phase change random access memory and methods of manufacturing and operating same
07/10/2012US8218358 Nonvolatile semiconductor memory device and method for driving same
07/10/2012US8218357 Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
07/10/2012US8218356 Spin-torque memory with unidirectional write scheme
07/10/2012US8218355 Magnetoresistive element and magnetic memory
07/10/2012US8218354 SRAM word-line coupling noise restriction
07/10/2012US8218353 Memory element circuitry with stressed transistors
07/10/2012US8218352 Semiconductor device including memory having nodes connected with continuous diffusion layer but isolated from each other by transistor
07/10/2012US8218350 Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
07/10/2012US8218349 Non-volatile logic devices using magnetic tunnel junctions
07/10/2012US8217863 Light emitting display, display panel, and driving method thereof
07/10/2012US8217490 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
07/10/2012US8217478 Magnetic stack with oxide to reduce switching current
07/05/2012WO2012088879A1 Ddr controller, and method and chip for implementing same
07/05/2012WO2012088853A1 Al-sb-te series phase change material used for phase change memory and method thereof
07/05/2012WO2012088821A1 Mems static memory and mems programmable device
07/05/2012US20120173811 Method and Apparatus for Delaying Write Operations
07/05/2012US20120173810 Method and Apparatus for Indicating Mask Information
07/05/2012US20120170396 Semiconductor memory device
07/05/2012US20120170362 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
07/05/2012US20120170361 Low-cost non-volatile flash-ram memory
07/05/2012US20120170360 Semiconductor memory device
07/05/2012US20120170359 Phase Change Memory With Fast Write Characteristics
07/05/2012US20120170358 MRAM cell structure
07/05/2012US20120170357 Method and system for providing multiple logic cells in a single stack
07/05/2012US20120170356 Semiconductor Memory Device with Hierarchical Bitlines
07/05/2012US20120170355 Storage element, storage device, and signal processing circuit
07/05/2012US20120170354 Apparatus and a method
07/05/2012US20120170353 Nonvolatile memory device and method for programming the same
07/05/2012US20120170352 Thermo programmable resistor based rom
07/05/2012US20120170351 Method and apparatus pertaining to a ferro-magnetic random access memory
07/05/2012US20120170350 Method and apparatus pertaining to a ferro-magnetic random access memory
07/05/2012US20120170349 Ferroelectric Memory with Shunt Device
07/05/2012US20120170348 Ferroelectric Memory Write-Back
07/05/2012US20120169579 Memory device and liquid crystal display device equipped with memory device
07/04/2012EP2472521A1 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
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