Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2012
07/25/2012CN102610272A Programming or erasing method and device for resistive random access memory
07/25/2012CN102610271A Memory with word-line segment access
07/25/2012CN102610270A Storage element and memory device
07/25/2012CN101964324B Active matrix substrate and display device
07/25/2012CN101635167B Circuit for prolonging service life of ferroelectric non-volatile trigger
07/25/2012CN101615425B Phase change memory with dual word lines and source lines and method of operating same
07/25/2012CN101325087B Memory element utilizing magnetization switching caused by spin accumulation and spin ram device
07/25/2012CN101232036B Phase change memory and manufacturing method thereofs
07/24/2012USRE43539 Output buffer circuit and integrated semiconductor circuit device with such output buffer circuit
07/24/2012US8230165 Method of storing data on a flash memory device
07/24/2012US8230156 Method for controlling non-volatile semiconductor memory system
07/24/2012US8229288 Stream data reproduction system
07/24/2012US8228770 Optical recording medium, recording/reproducing apparatus, and recording/reproducing method
07/24/2012US8228749 Margin testing of static random access memory cells
07/24/2012US8228741 Nonvolatile memory and method with reduced program verify by ignoring fastest and/or slowest programming bits
07/24/2012US8228740 Method of operating nonvolatile memory device
07/24/2012US8228739 Bandgap voltage and temperature coefficient trimming algorithm
07/24/2012US8228734 Nonvolatile memory device and method of programming the same
07/24/2012US8228733 Three-dimensionally stacked nonvolatile semiconductor memory
07/24/2012US8228732 EEPROM memory protected against the effects of breakdown of MOS transistors
07/24/2012US8228731 Random access memory with CMOS-compatible nonvolatile storage element and parallel storage capacitor
07/24/2012US8228725 Memory utilizing oxide nanolaminates
07/24/2012US8228724 Semiconductor device
07/24/2012US8228723 Adaptive wordline programming bias of a phase change memory
07/24/2012US8228722 Reducing temporal changes in phase change memories
07/24/2012US8228721 Refresh circuitry for phase change memory
07/24/2012US8228720 Nonvolatile memory devices including variable resistive elements
07/24/2012US8228719 Thin film input/output
07/24/2012US8228718 Ferromagnetic nanorings, mediums embodying same including devices and methods related thereto
07/24/2012US8228717 Spin current generator for STT-MRAM or other spintronics applications
07/24/2012US8228716 Magnetic element with thermally assisted writing
07/24/2012US8228715 Structures and methods for a field-reset spin-torque MRAM
07/24/2012US8228714 Memory device for resistance-based memory applications
07/24/2012US8228713 SRAM having wordline up-level voltage adjustable to assist bitcell stability and design structure for same
07/24/2012US8228712 Nonvolatile semiconductor memory device
07/24/2012US8228711 Bi-directional resistive memory devices and related memory systems and methods of writing data
07/24/2012US8228710 Resistance change memory device
07/24/2012US8228709 Resistance variable memory device and system
07/24/2012US8228708 Semiconductor memory device and a method of operating thereof
07/24/2012US8228707 Semiconductor memory device
07/24/2012US8228705 Memory cell and an associated memory device
07/24/2012US8228702 Ultimate magnetic random access memory-based ternary cam
07/24/2012US8227786 Nonvolatile memory element
07/19/2012WO2012068309A3 Bipolar spin-transfer switching
07/19/2012US20120185664 Synchronous Global Controller for Enhanced Pipelining
07/19/2012US20120184445 Superconducting Devices with Ferromagnetic Barrier Junctions
07/19/2012US20120182807 Three-Dimensional Stacked and-Type Flash Memory Structure and Methods of Manufacturing and Operating the Same Hydride
07/19/2012US20120182798 Non-Volatile Semiconductor Memory
07/19/2012US20120182796 Storage element and memory device
07/19/2012US20120182795 Emulation of static random access memory (sram) by magnetic random access memory (mram)
07/19/2012US20120182794 Multi-Terminal Phase Change Devices
07/19/2012US20120182793 Asymmetric silicon-on-insulator sram cell
07/19/2012US20120182792 Biasing circuit and technique for sram data retention
07/19/2012US20120182791 Semiconductor device and semiconductor memory device
07/19/2012US20120182790 Semiconductor memory device
07/19/2012US20120182789 Memory device, semiconductor device, and detecting method
07/19/2012US20120182788 Storage element, storage device, signal processing circuit, and method for driving storage element
07/19/2012US20120182787 Cross-point memory devices, electronic systems including cross-point memory devices and methods of accessing a plurality of memory cells in a cross-point memory array
07/19/2012US20120182786 Bidirectional resistive memory devices using selective read voltage polarity
07/19/2012US20120182785 Memory unit and method of operating the same
07/19/2012US20120182784 Semiconductor memory device
07/19/2012US20120182783 Programming an array of resistance random access memory cells using unipolar pulses
07/19/2012US20120181621 Field effect devices controlled via a nanotube switching element
07/19/2012DE112005002818B4 Diodenarrayarchitektur zum Adressieren von Widerstandspeicherarrays im Nanomaßstab Diode array architecture for addressing resistance memory arrays at the nanoscale
07/19/2012DE102006043634B4 Halbleiterspeichermodul mit Busarchitektur A semiconductor memory module with bus architecture
07/19/2012DE102006023173B4 Integrierter Halbleiterspeicher mit Takterzeugung und Verfahren zum Betreiben eines integrierten Halbleiterspeichers Integrated semiconductor memory with clock generation and method for operating an integrated semiconductor memory,
07/19/2012DE102005018640B4 Schaltungsanordnung Circuitry
07/19/2012DE102005001847B4 Speicherbauelement mit Abschlusseinheit und zugehöriges Speichersystem Memory device including termination unit and associated storage system
07/19/2012DE102004061299B4 Direktzugriffsspeicher und Eingangspuffer mit Differenzverstärker Random access memory and input buffer with differential amplifier
07/18/2012EP2477227A1 Magnetic tunnel junction comprising a polarizing layer
07/18/2012EP2476121A1 Method and system for providing a hierarchical data path for spin transfer torque random access memory
07/18/2012CN1937075B Data transfer operation completion detection circuit and semiconductor memory device provided therewith
07/18/2012CN1862702B Memory system and read-only memory system
07/18/2012CN1825480B Semiconductor memory devices having signal delay controller and methods performed therein
07/18/2012CN1819059B Semiconductor memory device
07/18/2012CN102598140A Dram sense amplifier that supports low memory-cell capacitance
07/18/2012CN102598139A Non-volatile memory cell with non-ohmic selection layer
07/18/2012CN102593141A Electric field modulation type random memory cell array and memory
07/18/2012CN102593129A Novel complementary field-effect transistor regulated by electric field and logic circuit for complementary field-effect transistor
07/18/2012CN102592665A High-speed data writing structure and writing method for phase change memory
07/18/2012CN102592664A Phase change memory device with fast write characteristics
07/18/2012CN102592663A Setting circuit for phase change memories and setting method thereof
07/18/2012CN102592662A Storage unit and single-end low-swing bit line writing circuit
07/18/2012CN102592661A SRAM (Static random access memory) bit line leakage current compensation circuit
07/18/2012CN102592660A Single-end-operated subthreshold storage unit circuit
07/18/2012CN102592659A Sub-threshold storage circuit with high density and high robustness
07/18/2012CN102592658A Storage element and storage device
07/18/2012CN102592657A Storage element and storage device
07/18/2012CN102592654A Semiconductor memory device
07/18/2012CN101303887B Perfect alignment and duty ratio control of data output of memory device
07/18/2012CN101131867B 校准电路 Calibration circuit
07/17/2012US8223581 Semiconductor storage device
07/17/2012US8223579 Semiconductor storage device
07/17/2012US8223578 Semiconductor device including multi-chip
07/17/2012US8223577 Semiconductor memory circuit
07/17/2012US8223561 Data line management in a memory device
07/17/2012US8223558 Nonvolatile semiconductor memory device
07/17/2012US8223555 Multiple level program verify in a memory device
07/17/2012US8223554 Programming non-volatile memory with high resolution variable initial programming pulse
07/17/2012US8223553 Systems and methods for programming a memory device
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