Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2012
08/02/2012WO2012100562A1 Resistive random access unit and resistive random access memory
08/02/2012US20120198194 Multi-Bank Memory Accesses Using Posted Writes
08/02/2012US20120195150 Refresh circuit
08/02/2012US20120195119 Nonvolatile semiconductor memory device
08/02/2012US20120195116 Nonvolatile memory device and method for manufacturing the same
08/02/2012US20120195115 Semiconductor device
08/02/2012US20120195114 Semiconductor storage device, semiconductor storage device manufacturing method and package resin forming method
08/02/2012US20120195113 Phase change random access memory apparatus
08/02/2012US20120195112 Method of writing to a spin torque magnetic random access memory
08/02/2012US20120195111 In-Line Register File Bitcell
08/02/2012US20120195110 Semiconductor memory device
08/02/2012US20120195109 Semiconductor storage device
08/02/2012US20120195108 Sram cell having a p-well bias
08/02/2012US20120195107 Method for Selectable Guaranteed Write-Through With Early Read Suppression
08/02/2012US20120195106 SRAM Timing Cell Apparatus and Methods
08/02/2012US20120195105 Sram bit cell
08/02/2012US20120195104 Semiconductor memory device
08/02/2012US20120195103 Semiconductor device having complementary bit line pair
08/02/2012US20120195102 Nano-electro-mechanical dram cell
08/02/2012US20120195101 Resistance-changing memory device
08/02/2012US20120195100 Semiconductor device and method of controlling semiconductor device
08/02/2012US20120195099 Changing a memristor state
08/02/2012US20120195098 Method and system for utilizing perovskite material for charge storage and as a dielectric
08/02/2012US20120195097 Method and system for utilizing perovskite material for charge storage and as a dielectric
08/02/2012US20120195096 Differential plate line screen test for ferroelectric latch circuits
08/02/2012US20120195095 Memory support provided with memory elements of ferroelectric material and non-destructive reading method thereof
08/02/2012US20120195094 Memory support provided with elements of ferroelectric material and programming method thereof
08/02/2012US20120195093 Memory support provided with memory elements of ferroelectric material and improved non-destructive reading method thereof
08/02/2012DE19681425B3 Schaltung und Verfahren zum Regeln einer Spannung Circuit and method for controlling a voltage
08/02/2012DE10253696B4 Speichersystem mit einer Vielzahl von getakteten Speichervorrichtungen Memory system having a plurality of clocked storage devices
08/01/2012EP2482287A1 Memory support provided with elements of ferroelectric material and improved non-destructive reading method thereof
08/01/2012EP2482286A1 Memory support provided with elements of ferroelectric material and non-destructive reading method thereof
08/01/2012EP2482285A2 SRAM cell with improved read stability
08/01/2012EP2481084A2 Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same
08/01/2012EP2481050A1 A flash memory device and control method
08/01/2012EP2076904B1 Dynamic word line drivers and decoders for memory arrays
08/01/2012CN202363120U SRAM (static random access memory) unit under near-threshold power supply voltage realized by using virtual ground structure
08/01/2012CN102623631A Resistance transformation type random access memory unit, memory, and preparation method
08/01/2012CN102623483A Semiconductor device
08/01/2012CN102623047A Semiconductor device and method of controlling semiconductor device
08/01/2012CN102623046A Resistance changing device for realizing multinary addition calculation, and multinary addition calculation method
08/01/2012CN102623045A Resistive random access memory unit and resistive random access memory
08/01/2012CN102623044A In-Line Register File Bitcell
08/01/2012CN102623043A Semiconductor system and semiconductor apparatus
08/01/2012CN102623042A 存储器系统及其操作方法 The memory system and its method of operation
08/01/2012CN101740718B Multi-resistance state resistor random-access memory unit and preparation method thereof
07/2012
07/31/2012US8233337 SRAM delay circuit that tracks bitcell characteristics
07/31/2012US8233332 Methods and apparatus for strobe signaling and edge detection thereof
07/31/2012US8233329 Architecture and method for memory programming
07/31/2012US8233328 Nonvolatile semiconductor memory
07/31/2012US8233325 NAND flash memory
07/31/2012US8233321 Semiconductor memory device and method for driving semiconductor memory device
07/31/2012US8233319 Unipolar spin-transfer switching memory unit
07/31/2012US8233318 Phase change memory
07/31/2012US8233317 Phase change memory device suitable for high temperature operation
07/31/2012US8233316 Memory architecture and cell design employing two access transistors
07/31/2012US8233315 Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor
07/31/2012US8233314 Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials
07/31/2012US8233312 DRAM cell utilizing floating body effect and manufacturing method thereof
07/31/2012US8233311 Variable resistance nonvolatile storage device having a source line formed of parallel wiring layers connected to each other through vias
07/31/2012US8233310 Resistance-change memory
07/31/2012US8233309 Non-volatile memory array architecture incorporating 1T-1R near 4F2 memory cell
07/31/2012US8233308 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
07/31/2012US8233307 Analog memories utilizing ferroelectric capacitors
07/31/2012US8232589 Semiconductor integrated circuit device with reduced leakage current
07/26/2012WO2012100256A1 Row-decoder circuit and method with dual power systems
07/26/2012WO2012100255A1 Read sensing circuit and method with equalization timing
07/26/2012WO2012098900A1 Semiconductor memory device
07/26/2012WO2012098197A1 Compact volatile/non-volatile memory cell
07/26/2012WO2012098195A1 Loadless volatile/non-volatile memory cell
07/26/2012WO2012098184A1 Programmable volatile/non-volatile memory cell
07/26/2012WO2012098182A1 Combined volatile and non-volatile memory cell
07/26/2012WO2012098181A1 Volatile/non-volatile memory cell
07/26/2012WO2012097565A1 Phase change memory cell and manufacture method thereof
07/26/2012US20120192018 Apparatus and method for detecting over-programming condition in multistate memory device
07/26/2012US20120188832 Memory channel having deskew separate from redrive
07/26/2012US20120188819 Methods and systems for mems cmos programmable memories and related devices
07/26/2012US20120188818 Low-crystallization temperature MTJ for Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM)
07/26/2012US20120188817 Read Sensing Circuit and Method with Equalization Timing
07/26/2012US20120188816 Row-Decoder Circuit and Method with Dual Power Systems
07/26/2012US20120188815 Temporary storage circuit, storage device, and signal processing circuit
07/26/2012US20120188814 Memory device and semiconductor device
07/26/2012US20120188813 Verification algorithm for metal-oxide resistive memory
07/26/2012US20120188812 Hybrid mram array structure and operation
07/26/2012US20120188260 Graphics controller integrated circuit without memory interface
07/25/2012EP2479787A1 Magnetoresistive element and non-volatile semiconductor memory device using same
07/25/2012EP2479760A1 Memory device and liquid crystal display device equipped with memory device
07/25/2012EP2479759A1 Low power magnetic random access memory cell
07/25/2012EP2479676A1 Memory control circuit, memory control method, and integrated circuit
07/25/2012EP2478522A1 Systems and methods for reducing memory array leakage in high capacity memories by selective biasing
07/25/2012EP2478521A2 Configurable memory banks of a memory device
07/25/2012EP2145389B1 Software programmable logic using spin transfer torque magnetoresistive devices
07/25/2012CN202352351U High voltage control circuit and IC chip therein
07/25/2012CN102612749A Semiconductor device
07/25/2012CN102612715A System and method of operating a memory device
07/25/2012CN102612714A Semiconductor device and driving method thereof
07/25/2012CN102610742A Magnetic random access memory and manufacturing method thereof
07/25/2012CN102610589A Sram memory
07/25/2012CN102610274A Weight adjustment circuit for variable-resistance synapses
07/25/2012CN102610273A Method for reducing converted currents of resistive random access memories
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