G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2011
11/23/2011	CN1755835B Integrated circuit chip with improved array stability
11/23/2011	CN102257572A Mesochronous signaling system with core-clock synchronization
11/23/2011	CN102257571A Mesochronous signaling system with multiple power modes
11/23/2011	CN102257570A Balancing a signal margin of a resistance based memory circuit
11/23/2011	CN102254569A Quad-data rate (QDR) controller and realization method thereof
11/23/2011	CN101577025B Novel data acquisition accumulator and implementation method thereof
11/23/2011	CN101546810B Multilevel resistance conversion storage material containing germanium, antimony and selenium and application thereof
11/23/2011	CN101546807B Magnetoresistive element and magnetic memory
11/23/2011	CN101329903B Semiconductor memory device and method for operating semiconductor memory device
11/22/2011	US8065553 Phase interpolator for a timing signal generating circuit
11/22/2011	US8065467 Non-volatile, electrically-programmable memory
11/22/2011	US8064266 Memory devices and methods of writing data to memory devices utilizing analog voltage levels
11/22/2011	US8064261 Semiconductor nonvolatile memory device
11/22/2011	US8064259 Nonvolatile NAND-type memory devices including charge storage layers connected to insulating layers
11/22/2011	US8064257 Semiconductor memory device having faulty cells
11/22/2011	US8064255 Architecture of a nvDRAM array and its sense regime
11/22/2011	US8064254 Columnar non-volatile memory devices with auxiliary transistors and methods of operating the same
11/22/2011	US8064252 Multi-pass programming in a memory device
11/22/2011	US8064249 Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device
11/22/2011	US8064248 2T2R-1T1R mix mode phase change memory array
11/22/2011	US8064247 Rewritable memory device based on segregation/re-absorption
11/22/2011	US8064246 Creating spin-transfer torque in oscillators and memories
11/22/2011	US8064245 Magnetic random access memory with an elliptical magnetic tunnel junction
11/22/2011	US8064244 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications
11/22/2011	US8064243 Method and apparatus for an integrated circuit with programmable memory cells, data system
11/22/2011	US8064242 Very high speed FRAM for replacing SRAM
11/22/2011	US8064241 Semiconductor memory including voltage detection circuit for generating sense amplifier signal
11/22/2011	US8064240 Semiconductor memory device
11/22/2011	US8064222 Semiconductor integrated circuit device
11/22/2011	US8063460 Spin torque magnetic integrated circuits and devices therefor
11/22/2011	US8063459 Non-volatile magnetic memory element with graded layer
11/22/2011	US8062942 Method for fabricating multi-resistive state memory devices
11/22/2011	US8061828 Print media cartridge for a camera
11/22/2011	US8061823 Printhead assembly having recessed printhead
11/22/2011	US8061812 Ejection nozzle arrangement having dynamic and static structures
11/17/2011	WO2011143356A1 Magnetic random access memory device
11/17/2011	WO2011143221A1 Memory device having a local current sink
11/17/2011	WO2011143099A1 Write energy conservation in memory
11/17/2011	WO2011142371A1 Semiconductor device
11/17/2011	WO2011142090A1 Semiconductor storage device
11/17/2011	WO2011141913A1 Solid, multi-state molecular random access memory (ram)
11/17/2011	WO2011140726A1 Memory card, smart card
11/17/2011	WO2011094437A3 Memory access methods and apparatus
11/17/2011	US20110280075 Memory device and operating method thereof
11/17/2011	US20110280066 Semiconductor device having a field effect source/drain region
11/17/2011	US20110280065 Write Energy Conservation In Memory
11/17/2011	US20110280064 Composite resistance variable element and method for manufacturing the same
11/17/2011	US20110280063 Spintronic devices with integrated transistors
11/17/2011	US20110280062 Semiconductor memory device
11/17/2011	US20110280061 Semiconductor device
11/17/2011	US20110280060 Write buffering systems for accessing multiple layers of memory in integrated circuits
11/17/2011	US20110280059 Alternating bipolar forming voltage for resistivity-switching elements
11/17/2011	US20110280058 Nonvolatile memory device
11/17/2011	US20110280057 Memory Device Having A Local Current Sink
11/17/2011	US20110278355 Camera unit incoporating program script scanner
11/16/2011	EP2387039A1 Hierarchical buffered segmented bit-lines based sram
11/16/2011	CN202042191U Large-volume dynamic random access memory (DRAM) chip storage array structure
11/16/2011	CN1685438B Device and method for biasing threshold voltage in DRAM sensing
11/16/2011	CN1652151B Semiconductor device
11/16/2011	CN102246237A Multibit multiferroic memory element
11/16/2011	CN102246236A Self-tuning of signal path delay in circuit employing multiple voltage domains
11/16/2011	CN102244195A Forming electrodes for chalcogenide containing devices
11/16/2011	CN102243893A Memory circuits having a plurality of keepers
11/16/2011	CN102243891A Staggered programming for resistive memories
11/16/2011	CN101673755B Phase change memory cell utilizing composite structure diode and preparation method thereof
11/16/2011	CN101650967B Buffer structure of hardware silicon intellectual property
11/16/2011	CN101515473B Memory circuit
11/16/2011	CN101436607B Electric resistance transition memory and manufacturing method thereof
11/16/2011	CN101356584B Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits
11/16/2011	CN101330093B Memory element array
11/16/2011	CN101159164B Semiconductor device, memory and a memory operation method
11/16/2011	CN101106177B Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices
11/15/2011	US8059473 Non-volatile memory device
11/15/2011	US8059472 Process and temperature tolerant non-volatile memory
11/15/2011	US8059471 Method and apparatus of operating a non-volatile DRAM
11/15/2011	US8059470 Flash memory array with independently erasable sectors
11/15/2011	US8059469 Semiconductor device including driving transistors
11/15/2011	US8059467 Memory device and memory programming method
11/15/2011	US8059465 Non-volatile semiconductor memory device
11/15/2011	US8059462 Nonvolatile semiconductor memory device
11/15/2011	US8059459 Semiconductor memory having both volatile and non-volatile functionality and method of operating
11/15/2011	US8059458 3T high density nvDRAM cell
11/15/2011	US8059457 Memory device with multiple-accuracy read commands
11/15/2011	US8059456 Programming a NAND flash memory with reduced program disturb
11/15/2011	US8059455 Partial scrambling to reduce correlation
11/15/2011	US8059453 Magnetic tunnel junction and memristor apparatus
11/15/2011	US8059452 Cell structure for dual port SRAM
11/15/2011	US8059451 Multiple valued dynamic random access memory cell and thereof array using single electron transistor
11/15/2011	US8059450 Write verify method for resistive random access memory
11/15/2011	US8059449 Phase change device having two or more substantial amorphous regions in high resistance state
11/15/2011	US8059448 Semiconductor memory device with variable resistance elements
11/15/2011	US8059447 Capacitive discharge method for writing to non-volatile memory
11/15/2011	US8059446 Integrated circuit with memory having a current limiting switch
11/15/2011	US8059445 Ferroelectric memory
11/15/2011	US8058698 High performance MTJ element for STT-RAM and method for making the same
11/15/2011	US8058697 Spin transfer MRAM device with novel magnetic synthetic free layer
11/15/2011	US8058696 High capacity low cost multi-state magnetic memory
11/10/2011	WO2011140471A1 Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements
11/10/2011	WO2011140057A1 Mitigating channel coupling effects during sensing of non-volatile storage elements
11/10/2011	WO2011140044A2 Techniques for refreshing a semiconductor memory device

1 ... 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 ... 761