Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2011
10/06/2011US20110246855 Method and Apparatus of Generating a Soft Value for a Memory Device
10/06/2011US20110242923 Semiconductor memory device including clock control circuit and method for operating the same
10/06/2011US20110242913 Self refresh circuit
10/06/2011US20110242898 4-transistor non-volatile memory cell with pmos-nmos-pmos-nmos structure
10/06/2011US20110242893 Non-volatile memory unit cell with improved sensing margin and reliability
10/06/2011US20110242890 Semiconductor memory device for storing multivalued data
10/06/2011US20110242888 Semiconductor device and manufacturing method thereof
10/06/2011US20110242887 Programmable Resistance Memory with Feedback Control
10/06/2011US20110242886 Apparatus and Systems Using Phase Change Memories
10/06/2011US20110242885 Three-dimensional phase change memory
10/06/2011US20110242884 Programming at Least One Multi-Level Phase Change Memory Cell
10/06/2011US20110242883 Thermally assisted multi-bit mram
10/06/2011US20110242882 Semiconductor memory device including SRAM cell
10/06/2011US20110242881 Sram device
10/06/2011US20110242880 Memory elements with soft error upset immunity
10/06/2011US20110242879 Two word line sram cell with strong-side word line boost for write provided by weak-side word line
10/06/2011US20110242878 Methods for operating memory elements
10/06/2011US20110242877 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
10/06/2011US20110242876 Buffering systems for accessing multiple layers of memory in integrated circuits
10/06/2011US20110242875 Nonvolatile semiconductor memory device
10/06/2011US20110242874 Resistive memory and method for controlling operations of the same
10/06/2011US20110242873 Photo-Responsive Memory Resistor and Method of Operation
10/06/2011US20110242871 Vertically stacked third-dimensional embedded re-writeable non-volatile memory and registers
10/06/2011US20110240941 Silicon-Based Memristive Device
10/05/2011EP2372766A1 Magnetic memory element and magnetic memory device
10/05/2011EP2372716A1 Pseudo-inverter circuit on SeOI
10/05/2011EP2372559A2 Dynamic memory supporting simultaneous refresh and data-access transactions
10/05/2011EP2372558A2 Dynamic memory supporting simultaneous refresh and data-access transactions
10/05/2011EP2371002A1 Capacitively isolated mismatch compensated sense amplifier
10/05/2011EP2370976A1 Non-volatile memory and method with continuous scanning time-domain sensing
10/05/2011EP2370975A1 Clock-forwarding low-power signaling system
10/05/2011EP1743339B1 Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
10/05/2011EP1711948B1 Variable current sinking for coarse/fine programming of non-volatile memory
10/05/2011CN202003695U Memory and memory system with accumulated written-in characteristic
10/05/2011CN1937067B Reconfigurable input/output in hierarchical memory link
10/05/2011CN102208531A High density resistive random access memory cell
10/05/2011CN102208529A Magnetoresistive random access memory element and fabrication method thereof
10/05/2011CN102208209A Three-dimensional stacked semiconductor integrated circuit and control method thereof
10/05/2011CN101452742B Method for improving SRAM matching degree
10/05/2011CN101447225B No-disturb bit line write for improving speed of edram
10/05/2011CN101427320B Memory circuit and method for sensing a memory element
10/05/2011CN101154465B Nonvolatile semiconductor memory device
10/05/2011CN101022033B Semiconductor memory device and data write and read methods thereof
10/04/2011US8031546 Semiconductor device
10/04/2011US8031538 Method and apparatus for data inversion in memory device
10/04/2011US8031529 Memory cell threshold voltage drift estimation methods and apparatus
10/04/2011US8031527 Semiconductor device and method for adjusting reference levels of reference cells
10/04/2011US8031526 Write pre-compensation for nonvolatile memory
10/04/2011US8031523 Memory and reading method thereof
10/04/2011US8031522 Memory system, program method thereof, and computing system including the same
10/04/2011US8031521 Reprogramming non-volatile memory devices for read disturbance mitigation
10/04/2011US8031519 Shared line magnetic random access memory cells
10/04/2011US8031518 Methods, structures, and devices for reducing operational energy in phase change memory
10/04/2011US8031517 Memory device, memory system having the same, and programming method of a memory cell
10/04/2011US8031516 Writing memory cells exhibiting threshold switch behavior
10/04/2011US8031515 Data programming circuits and memory programming methods
10/04/2011US8031514 Bistable nanoswitch
10/04/2011US8031513 Semiconductor device and method of operating thereof
10/04/2011US8031512 Multiple-valued DRAM
10/04/2011US8031511 Semiconductor device
10/04/2011US8031510 Ion barrier cap
10/04/2011US8031509 Conductive metal oxide structures in non-volatile re-writable memory devices
10/04/2011US8031508 Resistance change memory device
10/04/2011US8031507 Semiconductor memory device
10/04/2011US8030637 Memory element using reversible switching between SP2 and SP3 hybridized carbon
10/04/2011US8029107 Printhead with double omega-shaped heater elements
10/04/2011US8029101 Ink ejection mechanism with thermal actuator coil
09/2011
09/29/2011WO2011119975A1 Damascene -type magnetic tunnel junction structure comprising horizontal and vertical portions and method of forming the same
09/29/2011WO2011119941A1 Low-power 5t sram with improved stability and reduced bitcell size
09/29/2011WO2011119938A1 Reference cell write operations in a memory
09/29/2011WO2011119647A1 Multi-port non-volatile memory that includes a resistive memory element
09/29/2011WO2011119641A1 Multiple instruction streams memory system
09/29/2011WO2011119500A1 Simultaneous multi-state read or verify in non-volatile storage
09/29/2011WO2011118395A1 Magnetic memory element, magnetic memory, and method for manufacturing the same
09/29/2011WO2011118119A1 Semiconductor integrated circuit
09/29/2011WO2011089178A3 Integrated dram memory device
09/29/2011WO2011075257A3 Spin torque magnetic integrated circuits and devices therefor
09/29/2011US20110237045 Phase change memory cell and manufacturing method thereof using minitrenches
09/29/2011US20110235439 Static memory cell having independent data holding voltage
09/29/2011US20110235409 Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof
09/29/2011US20110235408 Semiconductor memory device
09/29/2011US20110235407 Semiconductor memory device and a method of manufacturing the same
09/29/2011US20110235406 Low-Power 5T SRAM with Improved Stability and Reduced Bitcell Size
09/29/2011US20110235405 Programming non-volatile storage element using current from other element
09/29/2011US20110235404 Pulse reset for non-volatile storage
09/29/2011US20110235402 Semiconductor memory device
09/29/2011US20110235401 Nonvolatile semiconductor memory device
09/29/2011US20110235400 Semiconductor memory device and method for controlling the same
09/29/2011US20110235399 Nonvolatile semiconductor memory device
09/29/2011US20110235398 Semiconductor memory device and operation method thereof
09/29/2011US20110235397 Non-volatile semiconductor memory device
09/29/2011US20110235396 Semiconductor memory device and semiconductor device
09/29/2011US20110235395 Semiconductor memory device and writing method thereof
09/29/2011US20110235394 Semiconductor memory device
09/29/2011US20110235393 Nonvolatile storage device
09/29/2011US20110235392 Nonvolatile semiconductor storage device
09/29/2011US20110235391 Reference Cell Write Operations At A Memory
09/29/2011US20110235390 High density memory device
09/29/2011DE19645745B4 Dynamischer Schreib-/Lesespeicher Dynamic read / write memory
09/28/2011EP2369618A1 SRAM memory cell with four transistors provided with a counter-electrode
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