Patents for G03C 5 - Photographic processes or agents therefor; Regeneration of such processing agents (11,726)
03/2008
03/20/2008US20080070159 Stereolithography resins and methods
03/20/2008US20080070158 Lithographic printing plate precursor and method for preparation of lithographic printing plate
03/20/2008US20080070157 Cyclodextrin derivative, photoresist composition including the cyclodextrin derivative and method of forming a pattern using the photoresist composition
03/20/2008US20080070133 Method for forming patterns using single mask
03/20/2008US20080070131 computer softeware used to form latent images on photoresists
03/20/2008US20080070126 lithography photomasks comprising attenuation segements including an layout of sub-resolution features, used for manufacturing semiconductor devices, by exposing and developing workpiece having a layer of photosensitive materials
03/20/2008US20080070010 electron beam lithography; removal of pattern, removing a portion of the resist to provide a patterned resist-coated substrate,spin coating the patterned resist-coated substrate with a liquid sol precursor( CoFe2O4) crystallization by heating
03/19/2008EP1000371A4 Ultra-broadband uv microscope imaging system with wide range zoom capability
03/18/2008US7344824 Alternating aperture phase shift photomask having light absorption layer
03/13/2008WO2008030950A2 Method of mask making to prevent phase edge and overlay shift for chrome-less phase shifting mask
03/13/2008WO2008030428A2 Composition for forming a laser-markable coating and a laser-markable material containing organic absorption enhancement additives
03/13/2008US20080063990 High Refractive Index Fluids for Immersion Lithography
03/13/2008US20080063989 disposing a tri(1H,1H-perfluorooctyl-1-oxy)tridecafluoro-1,1,2,2-tetrahydrooctylsilane silane and Tri(1H,1H-heptafluoro-1-butoxy)methylgermane compounds such that radiation passes through at least a portion of the liquid before impinging on a surface to perform lithography at short wavelength
03/13/2008US20080063987 An immersion boundary between an immersion area contact part and noncontact part on the immersion supporting plate formed when an immersion area is moved according to a predetermined exposure area and an exposure map is determined in advance. then, immersion supporting plate is cleaned while moving jig
03/13/2008US20080063986 Method of forming fine pattern of semiconductor device
03/13/2008US20080063985 Method for forming fine pattern of semiconductor device
03/13/2008US20080063984 Process Solutions Containing Surfactants
03/13/2008US20080063978 Photo-curable resin composition, method of patterning the same, and ink jet head and method of fabricating the same
03/13/2008US20080063976 a silicon carbide, nitride or oxide, a polysisequioxanes, or a metal, or metal compound capable of diffusing to a top surface of the resist material, and has an etch rate different from that of the first material ( photoresist or a polymer)
03/13/2008US20080063956 Mark position detection apparatus
03/13/2008US20080063949 Functional Substrate
03/13/2008US20080063948 Forming a photomask pattern comprising sub-resolution assist features (SRAF); improved techniques for dealing with illegal SRAF by reassigning them to another position without deleting so as not to interfer with optical proximity correction process
03/13/2008US20080062223 Liquid ejection head, method of manufacturing liquid ejection head and image forming apparatus
03/13/2008US20080061248 compositions suitable for use as immersion liquids in immersion lithography, and immersion lithography processes and apparatus for using the compositions with uv radiation
03/12/2008CN100374956C A composition containing a photoacid generator monomer and carrier coated with the same and application thereof
03/11/2008US7341824 Controlled-release layer is applied to a surface of substrate base; conductive metal layer is coated; creating dielectric peg; nozzle layer is applied; photolithography is used to define a trench; removing controlled-release layer
03/06/2008US20080057448 improved uniform surface state; including a biphenol derivatives reducing agent for silver, polyvinyl butyral binder, non-photosensitive organic silver salt; Low fog, high image density, excellent image tone, and excellent raw stock storability
03/06/2008US20080057447 rapid thermal processing of a photothermographic materials; involving a transport feed roller, light-insensitive layer or back coating layer contains a lubricant fatty ester, a biphenol derivatives reducing agent for silver
03/06/2008US20080057446 having (meth)acryl and carboxyl groups can be developed with aqueous solution of weak alkaline sodium carbonate; patterned layer adherers to substrate; patterned protective coating for semiconductor and wirings, cover-lay film, and solder resist; copolymers of polyether, polysiloxane, polysulfones
03/06/2008US20080057445 Self-aligned spatial frequency doubling
03/06/2008US20080057444 stacking, exposure the first mask, developing the positive photoresist layer to form an intaglio, molding; forming a multiple levels in a simple process; use for forming circuit patterns
03/06/2008US20080057443 Methods of improving single layer resist patterning scheme
03/06/2008US20080057441 Method of manufacturing semiconductor device
03/06/2008US20080057440 illuminators, supports and projectors arranged to transfer pattern onto substrates, and liquid supply system comprising tanks and fluid flow controllers; non-contact gas seal forms; using immersion lithography to increase throughput
03/06/2008US20080057436 Photosensitive polymer and photoresist composition
03/06/2008US20080057432 Toner composition and method of preparation
03/06/2008US20080057418 Method and system for reducing overlay errors within exposure fields by apc control strategies
03/06/2008US20080057411 Purification by removing sulfur, carbon and oxygen compounds by contact with excited oxygen; photoresist layer is removed with a sulfur hexafluoride; etching; binary, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks; molybdenum-doped silicon oxynitride and chrome layers
03/06/2008US20080057410 Repairing a defect by forming a phase voxel cavity in the photolithographic mask to compensate; microelectronics, semiconductors
03/06/2008US20080057409 Method of Mask Making to Prevent Phase Edge and Overlay Shift For Chrome-Less Phase Shifting Mask
03/06/2008US20080057408 Photomask and pattern forming method employing the same
03/06/2008US20080055581 Devices and methods for pattern generation by ink lithography
03/06/2008US20080055578 Roll printer with decomposed raster scan and X-Y distortion correction
03/06/2008US20080054202 Storage Phosphor Layer and System and Method for Erasing Same
03/06/2008US20080054201 Storage Phosphor Layer and System and Method for Erasing Same
03/06/2008US20080054200 Storage Phosphor Layer and System and Method for Erasing Same
03/05/2008EP1894049A2 System and method for increasing efficiency and quality for exposing images on celluloid or other photo sensitive material
03/04/2008US7338752 Method for forming metal pattern and electromagnetic interference filter using pattern formed by the method
03/04/2008US7338743 First polymer in which part of alkali-soluble groups are protected by an acid group labilized by an acid; a second polymer in which all alkali-soluble groups are protected by an acid group labilized by an acid; and an acid generator.
03/04/2008US7338736 Method of fabricating a phase shift mask
03/04/2008US7338609 Partial edge bead removal to allow improved grounding during e-beam mask writing
02/2008
02/28/2008US20080050682 Developer for Thermal Positive Type Photosensitive Composition
02/28/2008US20080050679 Methods and systems for performing immersion processing during lithography
02/28/2008US20080050678 Coating composition includes a solvent and 20 to 35 percent by weight of a polymer prepared by a condensation reaction of an acrylate polymer including a hydroxyl group with a derivative of muramic acid and a derivative of mandelic acid; enhanced optical properties, etching properties and coatabilities
02/28/2008US20080050677 Processing method, manufacturing method of semiconductor device, and processing apparatus
02/28/2008US20080050660 Multi-Layer Body Including a Diffractive Relief Structure and Method for Producing the Same
02/28/2008US20080049281 Security hologram, method of recording same, and method of using same
02/28/2008US20080048280 Light Receiving Device, Method for Fabricating Same, and Camera
02/26/2008US7336341 Simulator of lithography tool for correcting focus error and critical dimension, simulation method for correcting focus error and critical dimension, and computer medium for storing computer program for simulator
02/26/2008US7335466 Silver salt photothermographic dry imaging material, image recording method and image forming method for the same
02/26/2008US7335449 The light-shielding layer is patterned to form a main pattern and a phantom pattern; eliminate optical proximity effects; substrate with the phantom pattern can be narrower; etched to form trenches in the substrate; photolithographic process to make semiconductor wafer
02/21/2008WO2008022178A2 Method for separating optical and resist effects in process models
02/21/2008US20080045005 Pattern formation method and method for forming semiconductor device
02/21/2008US20080044989 Photomask and its method of manufacture
02/21/2008US20080044777 Applying a coating of a liquid photosensitive resin to a foraminous element and juxtaposing thereto a first mask comprising both opaque and transparent regions; photosensitive resin is exposed to light; curing
02/21/2008US20080044776 Underlayer compositions containing heterocyclic aromatic structures
02/21/2008US20080044774 Method for exposing twice by two masks in semiconductor process
02/21/2008US20080044773 Method of manufacturing a patterned color conversion layer, and methods of manufacturing a color conversion filter and an organic el display that use a color conversion layer obtained by the method
02/21/2008US20080044771 Manufacturing method of fuel cell having micro sensors and polymer layers
02/21/2008US20080044770 Process for forming resist pattern, semiconductor device and manufacturing method for the same
02/21/2008US20080044769 Method for forming resist pattern, semiconductor device and production method thereof
02/21/2008US20080044768 defocusing into a beam used during production of the mask to image the pattern on the mask; may eliminate the need for a second exposure with a trim mask; alignment problems associated with the second exposure may be avoided; single exposure may be more compatible with high speed manufacturing
02/21/2008US20080044767 Negative-working imageable materials
02/21/2008US20080044765 Ir Radical Polymerization-Type Photopolymer Plate Using Specific Binder Polymer
02/21/2008US20080044759 Fine Pattern Forming Material, Method Of Forming Fine Resist Pattern And Electronic Device
02/21/2008US20080044748 separating out the adverse effects of the exposure tool from the effects of the photoresist; exposure tool is adjusted to compensate for the errors; methodology includes a determination of where the simulator best focus location is in comparison to the empirically derived best focus location
02/21/2008US20080044741 Metrology systems and methods for lithography processes
02/21/2008US20080044739 Correction Of Resist Critical Dimension Variations In Lithography Processes
02/21/2008US20080043213 Euv Light Source, Euv Exposure System, and Production Method for Semiconductor Device
02/20/2008EP1888608A2 Ferric and acid complex
02/20/2008EP1501688B8 Multilayer image, particularly a multicolor image
02/19/2008US7333200 Overlay metrology method and apparatus using more than one grating per measurement direction
02/19/2008US7332265 Silver halide color photographic light-sensitive material, and image-forming method
02/19/2008US7332262 Forming amorphous carbon layer on semiconductor stack; etching; elimination of intermediate layer
02/19/2008US7332255 enables the user to measure process line shortening on an overlay tool; means for determining the misalignment, means for determining total line shortening, means for determining the equipment line shortening, and means for determining process line shortening
02/14/2008US20080038679 Developing agent and manufacturing method thereof
02/14/2008US20080038678 ArF excimer laser beam (193 nm); lithography; photoresist; organic copolymer of pyrimidinetrione, imidazolidinedione, imidazolidinetrione or triazinetrione units and a diepoxide, and also a diacid to form a copolyester; solvent
02/14/2008US20080038677 Patterning non-planar surfaces
02/14/2008US20080038674 Composite Polymer Microfluidic Control Device
02/14/2008US20080038672 Method for manufacturing electronic device, electronic device, and electronic apparatus
02/14/2008US20080038671 Pattern forming method and apparatus
02/14/2008US20080038670 Solder mask application process
02/14/2008US20080038662 Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths
02/14/2008US20080038647 Liquid Developer, Method of Making Liquid Developer, Image Forming Method, and Image Forming Apparatus
02/14/2008US20080036980 Pattern forming method and apparatus used for the same
02/14/2008US20080035980 Mask for forming contact hole
02/14/2008US20080035857 Method of manufacturing a radiation image storage panel
02/07/2008US20080032244 Method and apparatus for forming crystalline portions of semiconductor film
02/07/2008US20080032243 Photoresist Coating Composition and Method for Forming Fine Contact of Semiconductor Device
02/07/2008US20080032240 Reduction of CO2 reaction at developer surface
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