Patents for G03C 5 - Photographic processes or agents therefor; Regeneration of such processing agents (11,726)
10/2008
10/23/2008US20080261384 Removing photoresist layer with hydrogen, oxygen, and nitrogen to transform surface to a crust covering a soft photoresist layer; doping; wet, dry, or plasma stripping in pinning-down manner; temperature for first removing step is lower than second removing step and gasification temperature of solvent
10/23/2008US20080261145 Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
10/23/2008US20080261128 Mask for semiconductor (integrated circuits) manufacture composed of a layer with a grain interface or a a material interface that provides enhanced etch selectivity, especially a tunable, etch resistant anti-reflective coating material and increased resistance to semiconductor manufacturing processes
10/23/2008US20080261123 analyzing the monitored process parameter, and a data storage component; protective device against at unauthorized use and copying; detect optical radiation from a wafer exposure scanner; adjustment or alteration to the integrated circuit production steps
10/23/2008US20080261122 Photolithography mask with protective capping layer
10/23/2008US20080261121 photomask for the manufacture of integrated circuits, having a conformal protective chrome silicide capping layer on top surfaces and sidewalls of the first and second opaque regions; nondiffusion of underlying layers
10/23/2008US20080261120 Photolithography mask with integrally formed protective capping layer
10/22/2008CN101290501A Copying-proof film based on organic membrane structure and its preparation
10/22/2008CN100428055C Photolithographic process, photomask and manufacturing thereof
10/21/2008US7439001 Focus blur measurement and control method
10/21/2008US7438998 Wiring pattern (mask layout) in the form of a line including angled portions with a local difference in line width is divided into rectangular patterns each having a large area and node portions interconnecting the rectangular patterns; high correction accuracy
10/21/2008US7438996 Decreasing error of line width on coarse/dense pattern; adjusting numerical aperture and/or coherence factor
10/21/2008US7438995 Use of partially fluorinated polymers in applications requiring transparency in the ultraviolet and vacuum ultraviolet
10/21/2008US7438950 Forming a region in which a graft polymer, that directly bonds to a surface of a base material that includes a polyimide is generated in a pattern shape; imparting electroless plating catalyst or a precursor thereof and electroless plating so as to form a metallic film in the pattern shape
10/16/2008WO2008022178A3 Method for separating optical and resist effects in process models
10/16/2008US20080254395 Allowing easy, inexpensive user labeling of individual discs; professional look; activator and colorant precursor; radiation absorption marking
10/16/2008US20080254393 Light emitting diode chip bonded to substrate ; patterned by photolithography
10/16/2008US20080254392 Flexible circuit with cover layer
10/16/2008US20080252910 Method and apparatus for managing printing solutions in a local area network
10/15/2008CN100426460C Pattern formation method
10/14/2008US7435763 Solid freeform compositions, methods of application thereof, and systems for use thereof
10/14/2008US7435609 Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server
10/14/2008US7435533 Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases
10/14/2008US7435517 Electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing; allows reliable correction of the illumination parameters of an e-beam lithographic system by considering the influence of the fogging effect
10/14/2008US7435514 Active mask lithography
10/14/2008US7435512 Using a photomask that can prevent critical dimension biases of pattern images of different pattern densities while forming a circuit pattern
10/09/2008WO2008094746A3 Sub-lithographic interconnect patterning using self-assembling polymers
10/09/2008WO2008086116A3 Roll-to-roll method and system for micro-replication of a pattern of large relief three-dimensional microstructures
10/09/2008WO2007111837A3 Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material
10/09/2008US20080248655 DEVELOPMENT OR REMOVAL OF BLOCK COPOLYMER OR PMMA-b-S-BASED RESIST USING POLAR SUPERCRITICAL SOLVENT
10/09/2008US20080248429 Method of forming a contact hole
10/09/2008US20080248403 Method and system for improving critical dimension uniformity
10/08/2008EP1470447B1 Photolithographic critical dimension control using reticle measurements
10/07/2008US7432043 Distortions of the developed photosensitive film pattern are compensated for; more accurate target photosensitive film pattern; the depth of focus of the photolithography process is increased; uniformity
10/07/2008US7432039 Method for simultaneous patterning of features with nanometer scales gaps
10/07/2008US7432024 For semiconductors, microelectronic and microelectromechanical devices, and microfluidic and photonic devices; eliminating image distorting charging effects during electron beam patterning of the template and charging effects during scanning electron microscope inspection
10/02/2008WO2007127407A3 Active mask lithography
10/02/2008US20080242860 Silver halide color photographic light-sensitive material and image formation method using the same, silver halide emulsion, reducing compound having group adsorptive to silver halide and method for producing the same
10/02/2008US20080241768 Transfer substrate, and fabrication process of organic electroluminescent devices
10/02/2008US20080241767 Structure for providing deactivating agent capable of deactivating without developing the plate; deactivated plate is safe or has better stability at room lighting and can be handled under room lighting before and during development; development can be on press with ink or fountain solution or off press
10/02/2008US20080241766 Photosensitive layers; lithography process using light sources ; development; heating; acid generator
10/02/2008US20080241765 Methods and systems for providing direct manufactured interconnecting assemblies
10/02/2008US20080241763 Patterning a thin film on substrate; photoresist; antireflective coating; photolithography
10/02/2008US20080241760 Peb embedded exposure apparatus
10/02/2008US20080241748 Organosilicon polymer containing chromogen; antireflactivity coating for lithography
10/02/2008US20080241715 Eliminating problems occuring on restart of coating, transferring and developing system interrupted during continuous operation; semiconductor photolithography production
10/02/2008US20080241714 Imaging asymmetric pattern with lens system and measuring alignment offset; low cost monitoring; preventing damage during extreme ultraviolet photolithography integrated circuit manufacturing
10/02/2008US20080239580 Magnetic head for perpendicular magnetic recording and method of manufacturing same, the magnetic head including pole layer and two shields that sandwich the pole layer
10/02/2008US20080239263 Lithographic system and device manufacturing method
10/01/2008CN100423011C Effective proximity effect correction methodology
09/2008
09/30/2008US7430731 Method for electrochemically fabricating three-dimensional structures including pseudo-rasterization of data
09/30/2008US7430072 System and method for increasing image quality in a display system
09/30/2008US7429447 Photothermographic material and image forming method
09/30/2008US7429446 Resist pattern forming method and semiconductor device fabrication method
09/30/2008US7429444 Black and white photothermographic material and image forming method
09/25/2008US20080233487 lithography focus and/or energy using a specially-designed optical critical dimension pattern. A wafer comprising a plurality of photomasks is received. Critical dimension, line-end shortening, and side wall angle of the plurality of photomasks are measured using an integrated metrology equipment.
09/25/2008US20080231170 Wavelength Converter, Light-Emitting Device, Method of Producing Wavelength Converter and Method of Producing Light-Emitting Device
09/25/2008DE102005059743B4 Verfahren zur Herstellung eines Unterscheidungsschutzes zwischen Original und Fotokopie Process for the preparation of a discrimination protection between Original and photocopy
09/24/2008EP1627406B1 Unbaked laminate for producing front plate of plasma display device, and method for producing front plate of plasma display device
09/23/2008US7427456 tabs having critical dimensions broader than those of the vertical patterns are additionally inserted into the edges of the vertical patterns disposed vertically to the dipole, thereby minimizing the difference in critical dimensions between central and edge portions of the vertical patterns
09/18/2008WO2008111513A1 Physical developer, method of preparing conductive pattern, electromagnetic wave shielding material, fitter for plasma display and panel for plasma display
09/18/2008US20080228309 Method and System for Reducing Critical Dimension Side-to-Side Tilting Error
09/18/2008US20080227012 Charge control agent and toner comprising the same
09/18/2008US20080227006 Stir-in pigment preparations for coloration of energy curable systems
09/18/2008US20080226995 Having thermodynamically reversible Diels Alder bond; noncoated; tissue engineering, permeable membranes, packaging materials
09/18/2008US20080226990 Maskless lithography; utilizing dark border region comprised of absorbing material, wedged reflective coating or interference grating to remove excess light; accuracy; maximizing active area
09/17/2008CN100420354C Method for forming wire-layout pattern and method for making semiconductor device and photoelectronic device
09/17/2008CN100419575C Image forming method using photothermographic material
09/16/2008US7426017 Focus test mask, focus measurement method and exposure apparatus
09/16/2008US7425707 Scintillator panel, method of manufacturing scintillator panel, radiation detection device, and radiation detection system
09/16/2008US7425397 Method of determining an illumination profile and device manufacturing method
09/16/2008US7425396 Photolithography and transfer of circuits for optical images for semiconductors and patterns
09/16/2008US7425390 Preparation of halftone phase shift mask blank
09/16/2008US7425389 Line photo masks and methods of forming semiconductor devices using the same
09/16/2008US7425094 Apparatus for detecting position and format of a film cassette
09/12/2008WO2006069255A3 Methods and systems for controlling variation in dimensions of patterned features across a wafer
09/11/2008US20080222597 Photo mask, exposure method using the same, and method of generating data
09/11/2008US20080220382 Lithographic apparatus and method
09/11/2008US20080220377 Row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction; semiconductors
09/11/2008US20080220345 Device manufacturing method, computer program and lithographic apparatus
09/11/2008US20080220270 Fabricating Tall Micro Structures
09/11/2008US20080217726 Integrated circuit system employing dipole multiple exposure
09/09/2008US7423805 Ultra-broadband UV microscope imaging system with wide range zoom capability
09/09/2008US7422777 N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
09/09/2008US7422765 Alkali metal halide phosphor; vacuum deposition
09/04/2008US20080213706 Method and apparatus for thermal development having a removable support member
09/04/2008US20080213694 Acid generator mixture is a diphenyl iodinium mesylate, tosylate or perfluorobutylsulfonate salt, a nonionic fluoroaliphatic polymer ester surfactant and N-methylpyrrolidone; solid phase synthesis of DNA, RNA, peptide nucleic acids, locked nucleic acids, or proteins for chips; photolithography
09/04/2008US20080212057 Substrate comprising a mark
09/03/2008CN100416232C Light scattering EUVL mask
09/02/2008US7420676 Alignment method, method of measuring front to backside alignment error, method of detecting non-orthogonality, method of calibration, and lithographic apparatus
09/02/2008US7419774 Photothermographic material and method for processing the same
09/02/2008US7419768 Methods of fabricating integrated circuitry
09/02/2008US7419765 Engraving a printing relief on a flexographic printing element that can be laser engraved, said element having a photochemically cross-linked relief layer, transparent and comprises oxidic, siliceous or zeolitic solid matter
09/02/2008US7419764 Method of fabricating nanoimprint mold
09/02/2008US7419763 Near-field exposure photoresist and fine pattern forming method using the same
09/02/2008US7419759 Photoresist composition and method of forming a pattern using the same
09/02/2008US7419749 Halftone phase shift mask blank, halftone phase shift mask and their preparation
08/2008
08/28/2008US20080206689 Method of Forming Flexible Electronic Circuits
08/28/2008US20080206688 zinc salts of an aryl sulfonic acid or of a fluorinated C2-C6 carboxylic acid; non-encapsulated alkali metal salts of an aryl sulfonic acid or of a fluorinated C2-C6 carboxylic acid; fluorinated C2-C6 carboxylic acids; improved Raw Stock Keeping; black and white photothermal material
08/28/2008US20080206686 Method of forming fine patterns of semiconductor device
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