| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 11/15/2001 | US20010039915 Heat treatment method for a silicon monocrystal wafer and a silicon monocrystal wafer |
| 11/08/2001 | WO2000044767A3 Method for drying protein crystals |
| 11/06/2001 | US6312516 Process for preparing defect free silicon crystals which allows for variability in process conditions |
| 11/01/2001 | WO2001031659A3 THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF |
| 10/31/2001 | EP1150339A1 Compound semiconductor wafer |
| 10/31/2001 | EP1149937A1 Thermally-diffused boron diamond and its production |
| 10/31/2001 | CN1320173A Method for removing defects of single crystal material and single crystal material from which defects are removed by the method |
| 10/30/2001 | US6309974 Method for eliminating residual oxygen impurities from silicon wafers pulled from a crucible |
| 10/30/2001 | US6309461 Crystal growth and annealing method and apparatus |
| 10/25/2001 | US20010034074 Making method of optical waveguide substrate |
| 10/25/2001 | US20010032581 Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof |
| 10/25/2001 | DE10064012A1 Tool used for processing wafers has a thermally sprayed coating on its surface |
| 10/24/2001 | EP1148356A2 Method of manufacturing an optical waveguide substrate |
| 10/24/2001 | EP1148158A2 Process for controlling thermal history of czochralski-grown silicon |
| 10/23/2001 | US6306735 Method for producing a semiconductor wafer |
| 10/18/2001 | WO2001077726A1 Optical device |
| 10/18/2001 | US20010031237 High pressure/high temperature production of colorless and fancy colored diamonds |
| 10/18/2001 | US20010030291 Organic film vapor deposition method and a scintillator panel |
| 10/18/2001 | DE10064081A1 Production of a semiconductor wafer comprises rounding the edges of the wafer, mechanically treating the wafer, wet chemically treating the wafer to remove damaged crystal regions and polishing the wafer |
| 10/18/2001 | DE10064073A1 Process for determining the crystallographic orientation of semiconductor single crystals comprises measuring an X-ray auxiliary reflex on a planar region of the surface of the crystals |
| 10/17/2001 | EP1146150A2 Low defect density, ideal oxygen precipitating silicon |
| 10/16/2001 | US6303522 Oxidation in an ambient comprising ozone and the reaction products of an organic chloro-carbon precursor |
| 10/16/2001 | US6303094 Wherein silicon atoms are removed from a sic crystal by heating said sic crystal in a vacuum at a temperature ranging from 1200 to 2200 degrees c. |
| 10/16/2001 | US6302957 Quartz crucible reproducing method |
| 10/11/2001 | WO2001075197A1 Method and apparatus for large-scale diamond polishing |
| 10/11/2001 | WO2001075196A1 Method and device for making substrates |
| 10/11/2001 | WO2001075195A2 Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and a waveguide polarization mode converter using the same |
| 10/11/2001 | US20010027744 In-situ post epitaxial treatment process |
| 10/11/2001 | US20010027743 Process for preparing defect free silicon crystals which allows for variability in process conditions |
| 10/10/2001 | EP1143503A2 Method of producing P-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same |
| 10/10/2001 | EP1143044A1 Coated diamond, method for preparing the same and composite material comprising the same |
| 10/10/2001 | EP1142010A2 Epitaxial silicon wafer with intrinsic gettering and method for the preparation thereof |
| 10/09/2001 | US6299982 Silicon single crystal wafer and method for producing silicon single crystal wafer |
| 10/09/2001 | US6299681 Single crystal conversion control |
| 10/04/2001 | WO2001073848A1 Production method for bonding wafer and bonding wafer produced by this method |
| 10/04/2001 | WO2001073828A1 Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam |
| 10/04/2001 | WO2001073827A1 Semiconductor wafer and production method therefor |
| 10/04/2001 | WO2001072406A1 High temperature/high pressure colour change of diamond |
| 10/04/2001 | WO2001072404A1 High temperature/high pressure colour change of diamond |
| 10/04/2001 | US20010025598 Methods for growing large-volume single crystals from calcium fluoride and their uses |
| 10/04/2001 | US20010025597 Low defect density, self-interstitial dominated silicon |
| 10/04/2001 | EP1138809A1 Silicon wafer and method for manufacturing the same |
| 10/04/2001 | EP1137826A1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same |
| 10/04/2001 | EP0972094B1 Low defect density, vacancy dominated silicon |
| 09/27/2001 | US20010023945 Semi-insulating silicon carbide without vanadium domination |
| 09/26/2001 | EP1136597A2 Silicon surface oxidation device and method of fabricating optical waveguide substrate by the device |
| 09/26/2001 | EP0708983B1 Chemical vapor deposition process for fabricating layered superlattice materials |
| 09/25/2001 | US6295159 Method for bulk periodic poling of congruent grown ferro-electric nonlinear optical crystals by low electric field |
| 09/25/2001 | US6294016 Growing gan-based epitaxial layer while doping epitaxial layer with magnesium with hydrogen serving as carrier gas by use of metalorganic chemical vapor deposition; rapid thermal annealing in nitrogen atmosphere; nitridation and annealing |
| 09/20/2001 | WO2001069666A1 Method for manufacturing silicon mirror wafer, silicon mirror wafer, and heat treatment furnace |
| 09/20/2001 | WO2001068955A1 Iii-v nitride substrate boule and method of making and using the same |
| 09/20/2001 | WO2001068271A1 Controlling surface chemistry on solid substrates |
| 09/20/2001 | US20010023022 Group III-V compound semiconductor wafers and manufacturing method thereof |
| 09/20/2001 | US20010022094 Silicon surface oxidation device and method of fabricating optical waveguide substrate by the device |
| 09/18/2001 | US6291874 Method for producing silicon single crystal wafer for particle monitoring and silicon single crystal wafer for particle monitoring |
| 09/18/2001 | US6291364 Method and apparatus for stabilizing high pressure oxidation of a semiconductor device |
| 09/13/2001 | US20010020437 Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface |
| 09/13/2001 | DE10010485A1 Verfahren zur Herstellung von hochhomogenen, grossformatigen Einkristallen aus Calciumfluorid sowie deren Verwendung A process for preparing highly homogeneous, large-sized single crystals of calcium fluoride, and their use |
| 09/12/2001 | EP1132495A1 Plasma-inert cover and plasma cleaning process and apparatus employing same |
| 09/11/2001 | US6287889 Diamond thin film or the like, method for forming and modifying the thin film, and method for processing the thin film |
| 09/11/2001 | US6287486 Cutting, polishing, applying ultrasonic oscillation transducer vibration |
| 09/11/2001 | US6287380 Low defect density silicon |
| 09/07/2001 | WO2001064977A1 Method for producing crystals and/or crystal materials containing fluorine |
| 09/06/2001 | US20010019902 Wet-oxidation apparatus and wet-oxidation method |
| 09/06/2001 | US20010019132 Semi-insulating silicon carbide without vanadium domination |
| 09/06/2001 | US20010018949 Method of producing semiconductor thin film and method of producing solar cell using same |
| 09/06/2001 | DE10010583A1 Process for structuring and cleaning partially silicided silicon wafers comprises structuring the wafers in a solution containing ammonia and hydrogen peroxide, and cleaning the wafers |
| 09/05/2001 | EP1130136A1 Process for manufacturing large single crystals of calcium fluoride and the use of the crystals in Photolithography |
| 09/04/2001 | US6284661 Method and apparatus for producing a wafer |
| 09/04/2001 | US6284384 For electronics |
| 08/30/2001 | WO2001063003A1 Device and method for carrying out plasma enhanced surface treatment of substrates in a vacuum |
| 08/30/2001 | US20010018271 Method for manufacturing a semiconductor wafer |
| 08/30/2001 | US20010017374 Semi-insulating silicon carbide without vanadium domination |
| 08/29/2001 | EP1127965A1 Etching method and article processed by the method |
| 08/29/2001 | EP1127175A1 Process for preparing defect free silicon crystals which allows for variability in process conditions |
| 08/23/2001 | US20010015170 SiC device and method for manufacturing the same |
| 08/22/2001 | EP1125008A1 Thermally annealed, low defect density single crystal silicon |
| 08/22/2001 | CN1309776A Method of organic film deposition |
| 08/21/2001 | US6277193 Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device |
| 08/16/2001 | WO2001059817A1 Method for treating a diamond surface and corresponding diamond surface |
| 08/16/2001 | US20010014570 Process for producing a semiconductor wafer with polished edge |
| 08/16/2001 | US20010014541 Method of sealing an epitaxial silicon layer on a substrate |
| 08/16/2001 | CA2399588A1 Method for treating a diamond surface and corresponding diamond surface |
| 08/14/2001 | US6274234 Very long and highly stable atomic wires, method for making these wires, application in nano-electronics |
| 08/14/2001 | US6273950 SiC device and method for manufacturing the same |
| 08/14/2001 | US6273944 Silicon wafer for hydrogen heat treatment and method for manufacturing the same |
| 08/09/2001 | WO2001057295A1 Patterning of nanocrystalline diamond films for diamond microstructures useful in mems and other devices |
| 08/09/2001 | WO2000071787A3 Semi-insulating silicon carbide without vanadium domination |
| 08/09/2001 | DE10062179A1 Manufacturing a semiconductor wafer using a mechanically releasable fixing |
| 08/08/2001 | EP1122342A1 Method for removing defects of single crystal material and single crystal material from which defects are removed by the method |
| 08/08/2001 | EP0972097B1 MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN |
| 08/07/2001 | US6271151 Method and apparatus for controlling the thickness of a gate oxide in a semiconductor manufacturing process |
| 08/07/2001 | US6270583 Closed type semiconductor wet thermal oxidation apparatus |
| 08/07/2001 | US6270581 Wet-oxidation apparatus and wet-oxidation method |
| 07/31/2001 | US6267817 Methods of forming semiconductor wafers, methods of treating semiconductor wafers to alleviate slip generation, ingots of semiconductive material, and wafers of semiconductive material |
| 07/26/2001 | US20010009341 Method for manufacturing a langasite single crystal substrate, a langasite single crystal substrate, and a piezoelectric device |
| 07/26/2001 | DE10059469A1 Recognizing crystal flaws in silicon single crystals comprises irradiating surface of single crystal shell and recognizing arrangement of silicon non-metal compound crystal from scattered light |
| 07/26/2001 | DE10004578C1 Production of a semiconductor wafer comprises polishing the edges of the wafer with a cloth with the continuous introduction of an alkaline polishing agent using polishing plates, wetting with a film and cleaning and drying |
| 07/25/2001 | EP1118880A1 Method of organic film deposition |
| 07/25/2001 | EP1118697A2 Low defect density, vacancy dominated silicon |