Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
03/1998
03/17/1998US5728211 Silicon single crystal with low defect density and method of producing same
03/12/1998DE19738184A1 Production of organic thin films on substrate
03/10/1998US5725658 Reducing residual inner stress of gaas
03/05/1998WO1998008664A1 Method for obtaining a wafer in semiconducting material of large dimensions and use of the resulting wafer for producing substrates of the semiconductor on insulator type
03/04/1998EP0827189A1 A method of cleaning a surface of a compound semiconductor crystal of group II-VI elements of periodic table
03/04/1998EP0826801A2 Silicon substrate manufacture
03/04/1998EP0826800A1 A method for the heat-treatment of ZnSe crystal
03/04/1998EP0826797A1 Methods for holding and pulling single crystal
03/03/1998US5723391 Silicon carbide gemstones
03/03/1998US5723076 Method of producing large polycrystalline plates from optical and scintillation materials
02/1998
02/25/1998EP0825160A1 Selfpolarization of ABO3 type perovskites
02/17/1998US5718762 Method for vapor-phase growth
02/17/1998US5718182 Pressure foot unit for sewing machine
02/11/1998EP0823498A1 Process for producing a heavily nitrogen doped ZnSe crystal
02/11/1998EP0823497A1 Process for controlling thermal history of Czochralski-grown silicon
02/10/1998US5716908 Process for controlling crystalline orientation of oxide superconductive film
02/10/1998US5716495 Cleaning method
01/1998
01/29/1998WO1998003704A1 Forging cylindrical ingots of alkali halides
01/27/1998US5711698 Method of synthetic diamond ablation with an oxygen plasma and synthetic diamonds etched accordingly
01/21/1998EP0819786A2 Etch process for single crystal silicon
01/20/1998US5710077 Method for the generation of stacking-fault-induced damage on the back of semiconductor wafers
01/14/1998EP0764975B1 Process for producing superficial piling-up defects on the backside of semiconductor wafers
01/13/1998US5707900 Method of heat-treating semiconductor crystal of a group II-group VI compound
01/13/1998US5706881 Heat treatment of superalloy casting with partial mold removal
01/07/1998EP0817236A2 Plasma etching electrode and process for production thereof
01/06/1998US5705080 Plasma-inert cover and plasma cleaning process
01/06/1998US5704973 Apparatus and method for the uniform distribution of crystal defects upon a silicon single crystal
12/1997
12/24/1997CN1168534A Method for producing wafer and apparatus employed therein
11/1997
11/26/1997CN1165875A Water thermal prepn. method for red, blue and ultraviolet ray emmitting porous silicon
11/18/1997CA2019348C Method of producing crystal bodies having controlled crystalline orientation
11/13/1997DE19618974A1 Semiconductor material treatment in cavitating liquid bath
11/12/1997CN1164461A Method of manufacturing resonator pieces
11/06/1997DE19718401A1 Removing metal impurities from silicon metalloid surface
11/04/1997US5683506 Method of manufacturing a bismuth-substituted rare earth iron garnet single crystal film for short wavelength
10/1997
10/29/1997EP0803725A1 Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal
10/23/1997WO1997039476A1 SiC ELEMENT AND PROCESS FOR ITS PRODUCTION
10/22/1997EP0802029A2 Method for orienting plural single crystal rods on a support in view of cutting up the rods simultaneously in a cutting machine and device for carrying out the method
10/22/1997EP0801606A1 Cleaning method
10/21/1997US5679476 Epitaxial wafer and method of fabricating thereof
10/21/1997US5679152 Method of making a single crystals Ga*N article
10/16/1997WO1997038474A1 ROOM TEMPERATURE STABLE COLOR CENTER LASER, LiF:F2+** MATERIAL, AND METHOD OF LASING
10/14/1997US5677565 Monocrystalline compound semiconductor wafer including non-monocrystalline peripheral region
10/14/1997US5676752 Method of producing sheets of crystalline material and devices made therefrom
10/08/1997EP0799914A2 A method and apparatus for producing semiconductor wafers
10/07/1997US5673750 Vacuum processing method and apparatus
10/01/1997EP0798773A2 Method of evaluating and method and apparatus for thermally processing semiconductor wafer
10/01/1997EP0798766A1 Method of manufacturing a monocrystalline semiconductor wafer with mirror-finished surface including a gas phase etching and a heating step, and wafers manufactured by said method
10/01/1997EP0798405A2 Method of manufacturing semiconductor wafers
10/01/1997EP0798404A2 Apparatus for manufacturing single crystal of silicon
09/1997
09/30/1997US5672382 Composite powder particle, composite body and method of preparation
09/24/1997EP0796933A2 A method for detecting crystal defects in a silicon single crystal substrate
09/24/1997EP0613418B1 Bistable magneto-optic single crystal films and method of producing same utilizing controlled defect introduction
09/23/1997US5669768 Apparatus for adjusting a gas injector of furnace
09/17/1997EP0795896A2 Dry etching method
09/16/1997US5667583 No cracking, smooth side face
09/15/1997CA2199878A1 Dry etching method
09/09/1997US5665180 Producing thin sheets
09/03/1997EP0792955A2 Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same
08/1997
08/21/1997WO1997030195A1 Apparatus and method for producing crystals by the czochralski method and crystals produced by this method
08/20/1997EP0790333A1 Apparatus and method for manufacturing single crystals
08/20/1997EP0587772B1 PROCESS FOR MAKING SUPERCONDUCTING Tl-Pb-Sr-Ca-Cu OXIDE FILMS AND DEVICES
07/1997
07/23/1997EP0603391B1 Vertical heat treatment apparatus and heat insulating material
07/22/1997US5650363 From melt blown thermoplastic microfibers, oleophilic
07/17/1997WO1997025648A1 Method and arrangement for poling of optical crystals
07/17/1997WO1997025457A1 PEROVSKITE WITH AO*(ABO3)n LAYER
07/17/1997DE19600218A1 Perowskit mit AO*(ABO¶3¶)¶n¶-Schicht Perovskite with AO * (ABO¶3¶) ¶n¶ layer
07/15/1997US5648114 Chemical vapor deposition process for fabricating layered superlattice materials
07/08/1997US5645937 At least two diamond layers and at least one interlayer of brazing alloy containing at least one carbide-forming metal
07/08/1997US5645897 Process and device for surface-modification by physico-chemical reactions of gases or vapors on surfaces, using highly-charged ions
07/02/1997EP0781876A1 Method and apparatus for production of single crystal
06/1997
06/25/1997CN1152635A Hole conduction tellurium-cadimium-mercury epitaxy material heat treatment process and device thereof
06/24/1997US5641381 Covering substrate with release layer, depositing indium phosphide film, coating with wax, curing, etching, removing wax
06/24/1997US5641353 Low hydrogen-content silicon crystal with few micro-defects caused from annealing
06/19/1997WO1997015067A3 A method of biaxially aligning crystalline material
06/18/1997EP0779648A2 Vacuum processing method and apparatus
06/17/1997US5639387 Method for etching crystalline bodies
06/12/1997WO1997020972A1 Method and apparatus for cooling crystals
06/03/1997US5635102 Highly selective silicon oxide etching method
05/1997
05/27/1997US5633212 Pyrogenic wet thermal oxidation of semiconductor wafers
05/21/1997EP0650465A4 Conversion of fullerenes to diamond.
05/20/1997US5631199 Injecting nitrous oxide into furnace loaded with wafers, controlled heating, stabilizing furnace interior with nitrogen gas, injecting ammonia gas, oxidation, purging and heat treatment in nitrogen atmosphere
05/14/1997EP0568696B1 PRODUCTION OF CLEAN, WELL-ORDERED CdTe SURFACES USING LASER ABLATION
05/07/1997EP0771892A1 Process for producing decorative silicone
04/1997
04/24/1997WO1997015067A2 A method of biaxially aligning crystalline material
04/24/1997DE19538717A1 Diamond crystals doped with foreign atoms or ions
04/23/1997EP0769809A1 Process for suppressing crystalline defects in silicon wafers
04/23/1997EP0769079A1 Apparatus for uniformly heating a substrate
04/23/1997CN2252819Y Te, Cd, Hg crystal heat treatment appts
04/17/1997WO1997013892A1 Improved method for the preparation of nanocrystalline diamond thin films
04/17/1997WO1997013646A1 Cleaning method
04/17/1997WO1997009470A3 Silicon carbide gemstones
04/16/1997CN1147571A Method of manufacturing silicon wafer
04/15/1997US5620512 Diamond film growth from fullerene precursors
04/08/1997US5618380 Wafer edge sealing
04/08/1997US5618345 Method of producing self-supporting thin film of silicon single crystal
04/01/1997CA2054784C Ternary active brazing based on a zirconium-nickel alloy
03/1997
03/26/1997EP0764975A1 Process for producing superficial piling-up defects on the backside of semiconductor wafers
03/26/1997EP0764968A2 Method for radiofrequency wave etching
03/25/1997US5614447 Method for heat-treating a semiconductor body
03/25/1997US5614019 Masking, etching, vapor deposition
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