| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 10/05/1999 | CA2182342C Method for radiofrequency wave etching |
| 10/05/1999 | CA2148629C Hydrogenation of photoresponsive semiconductor devices |
| 09/30/1999 | WO1999001593A3 Elimination of defects in epitaxial films |
| 09/30/1999 | DE19833257C1 Semiconductor wafer production process especially to produce a silicon wafer for fabricating sub-micron line width electronic devices |
| 09/29/1999 | EP0945530A1 A production method for a discrete structure substrate |
| 09/29/1999 | EP0944916A1 Very long and highly stable atomic wires, method for making these wires, application in nano-electronics |
| 09/23/1999 | DE19811965A1 Three-dimensional crystalline silicon structures are produced e.g. for micromechanical sensors, actuators and light guide components |
| 09/22/1999 | EP0943703A2 Silicon single crystal and method for producing the same |
| 09/22/1999 | CN1229445A Single crystal SiC and process for preparing the same |
| 09/15/1999 | EP0942078A1 Method for producing silicon single crystal wafer and silicon single crystal wafer |
| 09/15/1999 | EP0942077A1 A method for producing a silicon single crystal wafer and a silicon single crystal wafer |
| 09/10/1999 | WO1999045180A2 Abo3 perovskite with a step |
| 09/09/1999 | DE19808778A1 Verfahren zur Herstellung eines ABO¶3¶-Substrates mit einer Stufe A method for producing a substrate with a step-ABO¶3¶ |
| 09/07/1999 | US5948163 Apparatus for manufacturing crystals according to the Czochralski method, and crystals manufactured by the manufacturing method |
| 09/07/1999 | US5947102 Method for cutting wafers from a crystal |
| 09/01/1999 | EP0939147A2 A manufacturing method for calcium fluoride and calcium fluoride for photolithography |
| 08/31/1999 | US5945737 Thin film or solder ball including a metal and an oxide, nitride, or carbide precipitate of an expandable or contractible element |
| 08/31/1999 | US5944891 Method for the heat treatment of ZnSe crystal |
| 08/26/1999 | DE19900091A1 Semiconductor silicon wafers with oxidation annealing to eliminate surface and internal defects |
| 08/24/1999 | US5942445 Method of manufacturing semiconductor wafers |
| 08/24/1999 | US5942137 Method and apparatus for laser scribing grooves on hard crystals |
| 08/24/1999 | US5942100 Crystal etch monitor |
| 08/19/1999 | WO1999041779A1 Crystal ion-slicing of single-crystal films |
| 08/17/1999 | US5940722 Method of manufacturing a semiconductor comprising an oxygen-containing silicon wafer |
| 08/17/1999 | US5938842 Method for producing a single crystal using czochralski technique |
| 08/11/1999 | CN1225501A Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article |
| 08/10/1999 | US5935320 Process for producing silicon semiconductor wafers with low defect density |
| 08/10/1999 | CA2175787C Method of synthetic diamond ablation with an oxygen plasma and synthetic diamonds etched accordingly |
| 08/03/1999 | US5933707 Crystal substrate processing |
| 07/13/1999 | US5922213 Mirror finishes |
| 07/07/1999 | CN1221813A Apparatus for heating or cooling wafers |
| 07/06/1999 | US5919305 Thick film semiconductor |
| 07/06/1999 | US5919302 Low defect density vacancy dominated silicon |
| 06/30/1999 | EP0926718A2 Heat treatment method for monocrystalline silicon wafers |
| 06/30/1999 | EP0926714A1 Silicon wafer storage water and silicon wafer storage method |
| 06/30/1999 | EP0926707A2 Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article |
| 06/30/1999 | EP0926271A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 06/29/1999 | US5916456 Diamond treatment for passivating stress surface defects |
| 06/23/1999 | EP0923438A1 Method for obtaining a wafer in semiconducting material of large dimensions and use of the resulting wafer for producing substrates of the semiconductor on insulator type |
| 06/16/1999 | EP0922793A2 A method of processing a substrate made of a ferroelectric crystalline material |
| 06/16/1999 | EP0922792A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 06/15/1999 | US5913103 Method of detecting metal contaminants in a wet chemical using enhanced semiconductor growth phenomena |
| 06/15/1999 | US5911823 Method for pulling a single-crystal semiconductor |
| 06/09/1999 | EP0921215A1 Electromagnetic radiation absorbant crystals of lithium niobate and lithium tantalate and methods of preparing the same |
| 06/09/1999 | EP0921214A1 Single crystal silicon carbide and process for preparing the same |
| 06/03/1999 | WO1999027584A1 Single electron devices |
| 05/20/1999 | DE19749127A1 Crystal rod, especially a polycrystalline silicon rod for producing raw material for single crystal growth |
| 05/19/1999 | EP0916749A1 Single crystal SiC and a method of producing the same |
| 05/18/1999 | US5904912 Heat treatment of single crystal |
| 05/12/1999 | EP0915502A2 Method for heat treatment of silicon wafer and silicon wafer heat-treated by the method |
| 05/12/1999 | EP0914501A1 Forging cylindrical ingots of alkali halides |
| 05/11/1999 | US5902687 Alloy or metal lamination has suitable crystalline orientation against the direction of the stress, therefore the materials are improved in mechanical strength and anti-corrosion properties |
| 05/11/1999 | US5902640 Method of improving field emission characteristics of diamond thin films |
| 05/11/1999 | US5902519 Process for oxidizing iron-doped lithium niobate |
| 05/11/1999 | US5902135 Method for removing crystal defects in silicon wafers |
| 05/06/1999 | WO1999022049A1 Method of polishing cvd diamond films by oxygen plasma |
| 05/04/1999 | US5900166 Method of making deformation test samples of solid single crystals |
| 05/04/1999 | US5899743 Method for fabricating semiconductor wafers |
| 05/04/1999 | US5899731 Method of fabricating a semiconductor wafer |
| 04/28/1999 | EP0911431A1 Single crystal silicon wafer with increased mechanical resistance |
| 04/28/1999 | CN1215225A Raise of anti-mechanical force single crystal wafer |
| 04/27/1999 | US5897743 Jig for peeling a bonded wafer |
| 04/27/1999 | US5897705 Process for the production of an epitaxially coated semiconductor wafer |
| 04/22/1999 | DE19744618A1 Gravimetric method for determining material removal from semiconductor wafers |
| 04/21/1999 | CN1214378A Vacuum heat treatment process of molecular beam epitaxial TeCdHg material |
| 04/20/1999 | US5895583 Reduces polishing time to a matter of hours. |
| 04/13/1999 | US5893982 Forming a protective oxide layer by annealing in the presence of oxygen prior to edge polishing |
| 04/08/1999 | WO1999017345A1 Method for thermal curing of implantation-doped silicon carbide semiconductors |
| 04/07/1999 | CN1213436A Method and arrangement for poling of optical crystals |
| 04/06/1999 | USRE36185 Citrate buffer, hydrogen peroxide |
| 04/06/1999 | US5891243 Production of heavy doped ZnSe crystal |
| 04/06/1999 | US5891242 Apparatus and method for determining an epitaxial layer thickness and transition width |
| 04/06/1999 | US5891240 Radio frequency automatic identification system |
| 03/30/1999 | US5888918 Method for enhancing the color of minerals useful as gemstones |
| 03/30/1999 | US5888846 Method for microfabricating diamond |
| 03/30/1999 | US5888297 Method of fabricating SOI substrate |
| 03/24/1999 | EP0903427A1 Apparatus and method for producing crystals by the czochralski method and crystals produced by this method |
| 03/24/1999 | EP0853600A4 A method of biaxially aligning crystalline material |
| 03/23/1999 | US5885905 Semiconductor substrate and method of processing the same |
| 03/18/1999 | WO1999013139A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 03/18/1999 | DE19740904A1 Oxygen impurities are removed from a crucible-grown silicon wafer |
| 03/18/1999 | CA2269709A1 Single crystal sic and process for preparing the same |
| 03/16/1999 | US5882401 Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth |
| 03/04/1999 | DE19740905C1 Oxygen impurity removal from crucible-grown silicon@ wafer |
| 03/03/1999 | EP0898800A1 ROOM TEMPERATURE STABLE COLOR CENTER LASER, LiF:F 2??+ ** MATERIAL, AND METHOD OF LASING |
| 03/02/1999 | US5876819 Crystal orientation detectable semiconductor substrate, and methods of manufacturing and using the same |
| 02/24/1999 | CN1209034A Device and method for reducing size of semiconductor material |
| 02/23/1999 | US5874130 Wafer and method of producing a wafer |
| 02/23/1999 | CA2119774C Radio frequency automatic identification system |
| 02/17/1999 | EP0897021A1 Process and device for marking gems and product obtained |
| 02/16/1999 | US5871812 Apparatus and method for depositing molecular impurities on a semiconductor wafer |
| 02/16/1999 | US5871578 Methods for holding and pulling single crystal |
| 02/09/1999 | US5869387 Process for producing semiconductor substrate by heating to flatten an unpolished surface |
| 01/27/1999 | EP0893515A1 Preconditioned crystals of lithium niobate and lithium tantalate and methods of preparing the same |
| 01/20/1999 | EP0557415B1 Process for achieving controlled precipitation profiles in silicon wafers |
| 01/19/1999 | US5861102 Method for the flattening treatment of silicon single crystal surface |
| 01/14/1999 | WO1999001594A1 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
| 01/14/1999 | WO1999001593A2 Elimination of defects in epitaxial films |
| 01/14/1999 | DE19755705A1 Double sided lapping method for large sized wafer |
| 01/12/1999 | US5859408 Apparatus for uniformly heating a substrate |