| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 02/26/2004 | US20040035353 Manufacturing of organized molecular monolayers and adapted substrate |
| 02/25/2004 | CN1477239A Method for growing compound laser crystal |
| 02/19/2004 | WO2004014607A1 A method of polishing a wafer of material |
| 02/19/2004 | US20040031440 Forming thin films of silicon oxide on silicon wafers, by heating in furnaces having gas flow passageways, then purging with inert gases to remove impurities; oxidation |
| 02/19/2004 | DE20220258U1 Production of a semiconductor component used in the production of substrate-less luminescent diodes comprises separating a semiconductor layer from a substrate by irradiating with a laser beam having a plateau-shaped spatial beam profile |
| 02/18/2004 | CN1476047A Preparation method of gamma-LiAl0*/alpha-Al*0*composite base material |
| 02/17/2004 | US6693033 Method of removing an amorphous oxide from a monocrystalline surface |
| 02/17/2004 | US6692714 Placing a colored type ii natural diamond in a pressure-transmitting medium; consolidating pressure-transmitting medium into a pill; exposing pill to elevated pressure and temperature to change color of diamond |
| 02/12/2004 | US20040025983 Method of manufacturing silicon |
| 02/12/2004 | US20040025782 Process for producing low defect density, ideal oxygen precipitating silicon |
| 02/11/2004 | EP1388891A1 System and method for heat treating semiconductor |
| 02/10/2004 | US6689694 Micromechanical system fabrication method using (111) single crystalline silicon |
| 02/05/2004 | WO2003089925A3 Device based on partially oxidized porous silicon and method for the production thereof |
| 02/04/2004 | CN1472371A Method for modifying planar mono-crystal silicon surface |
| 02/04/2004 | CN1472368A Post-treating method and apparatus for rareearth barium-copper superconductive blocks under high pressure oxygen condition |
| 02/03/2004 | US6685779 Method and a system for sealing an epitaxial silicon layer on a substrate |
| 01/29/2004 | WO2004010075A1 Method for the production of nanometer scale step height reference specimens |
| 01/29/2004 | WO2003078699A3 Synthesis of stable colloidal nanocrystals using organic dendrons |
| 01/29/2004 | WO2003050598A3 Integrated crystal mounting and alignment system for high-throughput biological crystallography |
| 01/29/2004 | US20040018749 Method of decreasing brittleness of single crystals, semiconductor wafers, and solid-state devices |
| 01/29/2004 | US20040016743 Substantially-uniform-temperature annealing |
| 01/28/2004 | EP1383944A1 Method for treating the surface of a semiconductor material |
| 01/22/2004 | WO2004008521A1 High-resistance silicon wafer and process for producing the same |
| 01/22/2004 | WO2004007816A1 Method of fabricating substrates, in particular for optics, electronics or optoelectronics________________________________________ |
| 01/21/2004 | EP1382723A2 Method of organic film deposition |
| 01/21/2004 | EP1382722A2 Optical Lithography Fluoride Crystal Annealing Furnace |
| 01/21/2004 | EP0923438B1 Method for obtaining a wafer in semiconducting material of large dimensions |
| 01/21/2004 | CN1469942A Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation |
| 01/15/2004 | WO2004005593A2 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects |
| 01/15/2004 | WO2003067637A3 Methods of treating a silicon carbide substrate for improved epitaxial deposition |
| 01/15/2004 | CA2491514A1 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects |
| 01/14/2004 | EP1380676A1 Method for flattening surface of oxide crystal to ultra high degree |
| 01/14/2004 | EP1380675A1 Method for reducing oxygen component and carbon component in fluoride |
| 01/14/2004 | CN1467863A Semiconductor chip, semiconductor device and method for manufacturing same |
| 01/14/2004 | CN1467801A Method for low temperature oxidation of silicon and used apparatus |
| 01/13/2004 | US6676764 Method for cleaning a substrate in selective epitaxial growth process |
| 01/13/2004 | US6676753 Czochralski pullers for manufacturing monocrystalline silicon ingots, including heat shield having sloped portions |
| 01/08/2004 | US20040005777 High resistivity and high gettering ability; DZ-IG wafer that can serve as an alternative of SOI wafer for mobile communications |
| 01/08/2004 | US20040005266 Optical member, process for producing the same, and projection aligner |
| 01/08/2004 | US20040003770 Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon |
| 01/08/2004 | US20040003769 Method of producing silicon wafer and silicon wafer |
| 01/07/2004 | EP1378591A1 Method for removing defects in crystals |
| 01/07/2004 | CN1466557A Method for joining |
| 01/07/2004 | CN1133761C Open pipe tellurium cadmium mercury epitaxial material heat treatment method |
| 01/06/2004 | US6673439 Coated diamond, manufacturing method and composite material thereof |
| 01/06/2004 | US6673220 System and method for fabricating silicon targets |
| 01/06/2004 | US6673146 Having square hysteresis loop, rotator being formed of bismuth substituted rare earth iron garnet single crystal that has compensation temperature in range of 10 to 40 degrees c and is grown on non-magnetic garnet substrate by liquid phase epitaxy |
| 01/01/2004 | US20040000267 Method of determining nitrogen concentration within a wafer |
| 01/01/2004 | US20040000266 Method for reducing defect concentrations in crystals |
| 12/31/2003 | WO2004001836A1 Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| 12/31/2003 | CN1464920A Method for preparing tungstate single crystal |
| 12/31/2003 | CN1464916A Process for production of ultrathin protective overcoats |
| 12/31/2003 | CA2485594A1 Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| 12/30/2003 | US6670280 Methods of microstructuring ferroelectric materials |
| 12/30/2003 | US6670242 Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer |
| 12/30/2003 | US6669536 Method of making optical fluoride laser crystal components |
| 12/25/2003 | US20030235957 Method and structure for graded gate oxides on vertical and non-planar surfaces |
| 12/25/2003 | US20030233975 Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| 12/24/2003 | CN1463305A Silicon single crystal wafer having void denuded zone on surface and diameter of above 300mm and its production method |
| 12/23/2003 | US6667522 Silicon wafers for CMOS and other integrated circuits |
| 12/23/2003 | US6667252 Method of manufacturing compound semiconductor substrate |
| 12/18/2003 | US20030231416 Method for manufacturing optical element |
| 12/18/2003 | US20030230232 Method of making enhanced CVD diamond |
| 12/17/2003 | EP1372010A2 Method for manufacturing optical element |
| 12/16/2003 | US6663736 Method for making a bonded sapphire structure |
| 12/16/2003 | US6663708 Silicon wafer, and manufacturing method and heat treatment method of the same |
| 12/11/2003 | WO2003103026A1 Methods for transferring a layer onto a substrate |
| 12/10/2003 | CN2591536Y Valve apparatus and thermal processing apparatus |
| 12/10/2003 | CN1460573A Surface processing method for titanium-doped sapphire crystal laser rod |
| 12/04/2003 | US20030224619 Method for low temperature oxidation of silicon |
| 12/03/2003 | EP1366827A1 Substrate adapted for the fabrication of organised molecular monolayers and structures thus obtained |
| 12/03/2003 | CN1130016C Surface acoustic wave device |
| 11/27/2003 | WO2003097532A1 Process for manufacturing a gallium rich gallium nitride film |
| 11/27/2003 | CA2486178A1 Process for manufacturing a gallium rich gallium nitride film |
| 11/26/2003 | EP1118880B1 Method of organic film deposition |
| 11/25/2003 | US6652780 Used for recording and reading holographic information; sensitivity |
| 11/25/2003 | US6652763 Method and apparatus for large-scale diamond polishing |
| 11/25/2003 | US6652646 Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions |
| 11/25/2003 | US6652644 Adjusting lithium oxide concentration in wafers using a two-phase lithium-rich source |
| 11/20/2003 | US20030213964 III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same |
| 11/18/2003 | US6649885 Whereby temperature of wafer can be accurately measured at all times, so that epitaxial growth processing and etching can be conducted on wafer kept at prescribed temperature |
| 11/18/2003 | US6649326 Photolithographic method and UV transmitting fluoride crystals with minimized spatial dispersion |
| 11/18/2003 | US6648966 Wafer produced thereby, and associated methods and devices using the wafer |
| 11/13/2003 | WO2003072284A3 Method of removing casting defects |
| 11/13/2003 | WO2003062908A3 Three-dimensional photonic crystal waveguide structure |
| 11/13/2003 | WO2003038873A3 Removing an amorphous oxide from a monocrystalline surface |
| 11/13/2003 | US20030209327 Temperature control for single substrate semiconductor processing reactor |
| 11/13/2003 | US20030209200 Temperature control for single substrate semiconductor processing reactor |
| 11/13/2003 | US20030209190 Method for making an oriented optical fluoride crystal blank |
| 11/11/2003 | US6645836 Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon |
| 11/11/2003 | US6645834 Method for manufacturing annealed wafer and annealed wafer |
| 11/11/2003 | US6645639 Epitaxial oxide films via nitride conversion |
| 11/06/2003 | US20030207132 The present invention relates to oxides on suitable substrates, as converted from nitride precursors. Oxidation of compounds for fabrication of a ferro-electric device. |
| 11/04/2003 | US6642123 Method of fabricating a silicon wafer including steps of different temperature ramp-up rates and cool-down rates |
| 11/04/2003 | US6641662 Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same |
| 10/30/2003 | WO2003089925A2 Device based on partially oxidized porous silicon and method for the production thereof |
| 10/30/2003 | WO2003089698A1 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation |
| 10/30/2003 | WO2003089690A1 Selectively aligning nanometer-scale components using ac fields |
| 10/30/2003 | US20030203599 Semiconductor wafer and method for fabricating the same |
| 10/29/2003 | EP1356139A2 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core |