Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
09/2004
09/29/2004EP1332247B1 Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation
09/29/2004CN1533588A Method and device for thermally treating substrates
09/28/2004US6797250 Single-crystal optical element having flat light-transmitting end surface inclined relative to cleavage plane
09/28/2004CA2212653C A method for the heat treatment of znse crystal
09/23/2004US20040185680 Method and device for thermal treatment of substrates
09/23/2004US20040185677 Method for stabilizing high pressure oxidation of a semiconductor device
09/23/2004US20040183064 Single electron devices
09/23/2004US20040182816 Preparing an etchable upper substrate and an etchable lower substrate; forming image display means; combining the upper substrate and the lower substrate together so that the image display means are individually sealed up; etching outer surfaces of the upper substrate and the lower substrate; cutting
09/22/2004EP1459372A1 Shaped nanocrystal particles and methods for making the same
09/22/2004EP1459361A2 Layered structures
09/21/2004US6794312 Layering nitrided oxide on a silicon substrate
09/16/2004WO2004079786A2 Apparatus and method for reducing impurities in a semiconductor material
09/16/2004WO2004079061A1 Process for producing lithium tantalate crystal
09/16/2004WO2004079058A1 Annealing method for halide crystal
09/16/2004US20040177803 Single crystal diamond
09/16/2004US20040177802 Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements
09/16/2004CA2518065A1 Apparatus and method for reducing impurities in a semiconductor material
09/16/2004CA2515762A1 Annealing method for halide crystal
09/09/2004US20040175956 Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure
09/09/2004US20040175844 Sacrificial template method of fabricating a nanotube
09/09/2004US20040175499 Providing single crystal chemical vapour deposition (CVD) diamond which is coloured and heat treating the diamond under conditions suitable to produce the desired colour
09/09/2004US20040173315 Apparatus and method for reducing impurities in a semiconductor material
09/09/2004US20040173141 IT-cut quartz crystal unit
09/08/2004EP1261755B1 Device and method for carrying out plasma enhanced surface treatment of substrates in a vacuum
09/08/2004CN1528007A Method and device for doping diffusion and oxidation of silicon wafers under reduced pressure
09/07/2004US6787122 Method of making nanotube-based material with enhanced electron field emission properties
09/07/2004US6786968 Method for low temperature photonic crystal structures
09/07/2004US6786967 Ion exchange waveguides and methods of fabrication
09/02/2004US20040171253 Method for preparing gan based compound semiconductor crystal
09/02/2004US20040168638 System and method for heat treating semiconductor
09/02/2004DE10306801A1 Production of hexagonal monocrystals for making semiconductor components, comprises withdrawing the crystal from a melt in the direction of the c axis and heat-treating the crystal produced
09/01/2004EP1451857A2 Removing an amorphous oxide from a monocrystalline surface
08/2004
08/26/2004WO2004073057A1 Method for manufacturing silicon wafer
08/25/2004CN2636410Y Vertical oven sheet storage box
08/25/2004CN1163640C Single crystal SiC and process for preparing the same
08/24/2004US6780238 Argon/ammonia rapid thermal annealing for silicon wafers
08/19/2004WO2004070816A1 Plasma processing method, semiconductor substrate and plasma processing system
08/19/2004WO2004070815A1 Method of plasma oxidation and semiconductor substrate
08/19/2004WO2004070089A2 Deposition of layers on substrates
08/18/2004EP1447457A1 Process for strengthen grain boundaries of an article made from a Ni based superalloy
08/17/2004US6777690 Organic film vapor deposition method and a scintillator panel
08/12/2004WO2004067812A1 Diamond composite substrate and process for producing the same
08/12/2004WO2004066894A1 Marking of diamond
08/12/2004WO2004019403A3 Mechanical recycling of a wafer comprising a buffer layer, after having taken a layer therefrom
08/12/2004WO2003052150A3 Superelastic element made of a copper alloy and method for imparting and preserving a curvature of a given geometry
08/12/2004US20040157183 Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system
08/11/2004CN1519898A Laser annealing device and application
08/11/2004CN1519581A 闪烁体面板 The scintillator panel
08/10/2004US6774040 Apparatus and method for surface finishing a silicon film
08/10/2004US6773504 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
08/10/2004US6773503 Method of heat-treating fluoride crystal, method of producing optical part, and optical apparatus
08/05/2004WO2004049393A3 Annealing process of semiconductor wafer and device thereof
08/05/2004US20040152319 Processing apparatus for processing substrate by process solution
08/05/2004US20040150014 MOS transistor and method of manufacture
08/05/2004US20040149683 Method for forming pattern using printing process
08/04/2004EP0921214B1 Single crystal silicon carbide and process for preparing the same
08/04/2004CN1517455A Method of laser recrystallization
08/03/2004US6770138 Pattern for monitoring epitaxial layer washout
07/2004
07/29/2004WO2004063432A1 Method of synthesis of 3d silicon colloidal photonic crystals by micromolding in inverse silica opal (miso)
07/29/2004WO2004034478A3 Layer arrangement of hetero-connected semiconductor layers, comprising at least one intermediate separation layer, and method for the production thereof
07/29/2004US20040146722 Such as boron and indium in silicon; tensile/compression strength
07/29/2004US20040146451 Placing diamond into pressure-transmitting medium; consolidation into a pill; upgrading discolored diamonds; retention of optical clarity
07/29/2004DE10326576A1 Correcting method for translatoric axial deflection of semiconductor rod relative to cutting plane during sawing of semiconductor rod, e.g. of ruby or gallium-gadolinium garnet, using sensors for determining deflection
07/29/2004CA2507109A1 Method of synthesis of 3d silicon colloidal photonic crystals by micromolding in inverse silica opal (miso)
07/27/2004US6767848 Silicon semiconductor substrate and method for production thereof
07/22/2004US20040140206 Method for fabricating silicon targets
07/21/2004EP1200648B1 Method for producing segmented crystals
07/21/2004CN1514943A Preferred crystal orientation optical elements from cubic materials
07/21/2004CN1158702C Crystal ion-slicing of single crystal films
07/20/2004US6765717 Preferred crystal orientation optical elements from cubic materials
07/20/2004US6765240 Bulk single crystal gallium nitride and method of making same
07/15/2004US20040137762 Annealing process and device of semiconductor wafer
07/15/2004US20040135467 Method of manufacturing thin quartz crystal wafer
07/15/2004US20040134418 SiC substrate and method of manufacturing the same
07/14/2004EP1437762A1 Notched compound semiconductor wafer
07/14/2004EP1437427A1 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate
07/14/2004EP1437328A1 Method for creating silicon dioxide film
07/13/2004US6762420 Organic film vapor deposition method and a scintillator panel
07/08/2004WO2003065420A3 Method for producing a semiconductor element
07/08/2004US20040129202 Patterning of nanocrystalline diamond films for diamond microstructures useful in mems and other devices
07/08/2004DE10196294T5 Verfahren zur Herstellung von ultradünnen Schutzbeschichtungen Process for the preparation of ultra-thin protective coatings
07/07/2004EP1435010A1 Photolithographic uv transmitting mixed fluoride crystal
07/01/2004WO2004055875A1 Method for preparing film structure comprising ferroelectric single crystal layer
07/01/2004US20040124348 Controlling surface chemistry on solid substrates
07/01/2004US20040124088 Processing apparatus
07/01/2004US20040123794 Method for flattening surface of oxide crystal to ultra high degree
06/2004
06/30/2004EP1434255A2 Apparatus for processing substrate by process solution
06/30/2004EP1434254A2 Processing apparatus
06/24/2004WO2004053929A2 Semiconductor nanocrystal heterostructures
06/24/2004US20040118338 Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation
06/22/2004US6753955 Inspection device for crystal defect of silicon wafer and method for detecting crystal defect of the same
06/16/2004CN1505701A Method for flattening surface of oxide crystal to ultra high degree
06/15/2004US6750130 Heterointegration of materials using deposition and bonding
06/15/2004US6750118 Process and apparatus to subdivide objects
06/15/2004US6749686 Crystal growth method of an oxide and multi-layered structure of oxides
06/10/2004WO2004049393A2 Annealing process of semiconductor wafer and device thereof
06/10/2004WO2004048258A2 Method for forming carbon nanotubes
06/10/2004WO2004031456A3 Method for producing aluminum antimonide crystals for radiation detectors
06/10/2004US20040110378 Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical means
06/10/2004US20040110003 Method for shaping a nanotube and a nanotube shaped thereby
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