C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
11/2002
11/28/2002	WO2002095804A1 Method and device for the thermal treatment of substrates
11/28/2002	WO2002095803A1 Method and device for thermally treating substrates
11/28/2002	US20020174828 Thermal annealing process for producing silicon wafers with improved surface characteristics
11/28/2002	US20020174682 Method for enhancing the color of minerals useful as gemstones
11/26/2002	US6485807 Silicon wafers having controlled distribution of defects, and methods of preparing the same
11/21/2002	WO2002093621A1 Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure
11/21/2002	WO2002093201A2 Preferred crystal orientation optical elements from cubic materials
11/21/2002	WO2002059400A3 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
11/21/2002	US20020171123 System and method for fabricating silicon targets
11/21/2002	US20020170576 Risk of recontamination is substantially eliminated.
11/21/2002	US20020170485 Low defect density epitaxial wafer and a process for the preparation thereof
11/20/2002	EP1258545A1 Method for isothermal brazing of single crystal components
11/20/2002	EP1258029A1 Method for treating a diamond surface and corresponding diamond surface
11/20/2002	CN1380682A Method for manufacturing compound substrate of semiconductor
11/20/2002	CN1380449A Process for mixing oxygen into gallium nitride crystal and oxygen-mixed n-type gallium nitride single crystal plate
11/14/2002	WO2002091447A1 System and method for heat treating semiconductor
11/14/2002	US20020167661 Inspection device for crystal defect of silicon wafer and method for detecting crystal defect of the same
11/14/2002	US20020166502 Low defect density (Ga, Al, In) N and HVPE process for making same
11/13/2002	EP1256973A1 Heating system and method for heating an atmospheric reactor
11/13/2002	CN1379127A Process for preparing chemical-specific Mg-doped lithium niobate crystal with periodic polarizing microstructure
11/12/2002	US6479111 Process for production of ultrathin protective overcoats
10/2002
10/31/2002	WO2002086202A1 Method for treating the surface of a semiconductor material
10/31/2002	WO2001057295A9 Patterning of nanocrystalline diamond films for diamond microstructures useful in mems and other devices
10/31/2002	US20020160584 Semiconductor wafer and method for fabicating the same
10/31/2002	US20020157790 First wafer doped with hydrogen ions or rare gas ions is bonded to a second wafer and then delaminated by heat treatment to produce bonded wafer
10/31/2002	US20020157688 Method for cleaning a substrate in selective epitaxial growth process
10/31/2002	CA2444793A1 Method for treating the surface of a semiconductor material
10/29/2002	US6471771 In-situ post epitaxial treatment process
10/24/2002	WO2002084728A1 Control of thermal donor formation in high resistivity cz silicon
10/24/2002	WO2002084711A1 Heating system and method for heating an atmospheric reactor
10/24/2002	WO2002083997A1 Process for growing calcium fluoride monocrystals
10/24/2002	US20020153349 Plasma processing method and apparatus
10/23/2002	EP1251556A1 Process for producing semiconductor substrate
10/23/2002	CN1093183C Annealing equipment for high-temp. oxide crystal
10/23/2002	CN1093182C Decarbonizatino colour-removing annealing method for sapphire crystal
10/23/2002	CN1093085C Silicon carbide gemstones
10/22/2002	US6468347 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
10/17/2002	US20020151154 Heat treatment apparatus and heat treatment method
10/17/2002	US20020150496 Method of forming nano-crystalline structures and product formed thereof
10/17/2002	US20020148563 6685780 not granted per USPTO
10/17/2002	DE10117363A1 Production of a porous silicon dioxide disk comprises oxidizing a porous silicon disk having a number of macroscopic pores extending between the upper and lower sides of the plate and having a macroscopic pore diameter
10/16/2002	EP1249522A2 Oxygen doping method for a gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
10/16/2002	EP1190123B1 Encapsulation of crystals via multilayer coatings
10/10/2002	WO2000000674A3 Process for growth of defect free silicon crystals of arbitrarily large diameters
10/10/2002	US20020146912 Method of manufacturing compound semiconductor substrate
10/10/2002	US20020146562 Electrical insulating vapor grown carbon fiber and method for producing the same, and use thereof
10/10/2002	US20020144640 Method for increasing the light yield oxyorthosilicate compound scintillation crystals
10/09/2002	CN1373820A Crystal growth and annealing method and apparatus
10/08/2002	US6461948 Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam
10/03/2002	US20020142566 Silicon wafers for CMOS and other integrated circuits
10/03/2002	US20020141934 Graphitic polyhedral crystals in the form of nanotubes, whiskers and nanorods, methods for their production and uses thereof
10/03/2002	US20020139294 Low defect density regions of self-interstitial dominated silicon
10/03/2002	US20020139293 Method of manufacturing a magnet-free faraday rotator
10/02/2002	DE10114027A1 Treating silicon wafers comprises placing the wafers in an oven, raising the temperature to a process temperature, leaving to cure crystal defects
10/02/2002	DE10113551A1 Production of nanotubes used in a semiconductor element comprises contacting nanotubes connected as anode with a halide salt solution in contact with a cathode, and passing an electrical current through the solution
09/2002
09/26/2002	US20020137248 Manufacturing method of semiconductor film
09/26/2002	US20020134749 Method of making a vertical, mirror quality surface in silicon and mirror made by the method
09/26/2002	DE10107150A1 Process used in microelectronics for identifying offsets comprises etching a substrate coated with an epitaxial layer in a testing device to uncover oxide islands, and forming offset markers
09/25/2002	EP1244139A2 Manufacturing method of semiconductor film
09/25/2002	EP1242836A1 CALCIUM FLUORIDE (CaF2) STRESS PLATE AND METHOD OF MAKING THE SAME
09/25/2002	CN1371434A Slicing of single-crystal films using ion implantation
09/24/2002	US6455446 High-temperature high-pressure processing method for semiconductor wafers, and an anti-oxidizing body used for the method
09/19/2002	US20020129901 High-temperature and high-pressure treatment device
09/19/2002	DE10154411A1 Wärmebehandlungsvorrichtung, die Vorrichtung verwendendes Wärmebehandlungsverfahren, und Verfahren zur Herstellung einer Halbleitervorrichtung Heat treatment device, the device-use heat treatment method, and method for manufacturing a semiconductor device
09/12/2002	US20020127826 Method and a system for sealing an epitaxial silicon layer on a substrate
09/12/2002	DE10210024A1 Production of semiconductor wafers comprises preparing a crystal of semiconductor material with an axially extending hollow chamber, removing the wafers using a wire cutter
09/11/2002	EP1060300B1 Abo3 perovskite with a step
09/10/2002	US6447604 Depositing nitride homoepitaxial layer by vapor phase epitaxy (vpe)
09/10/2002	US6447600 Method of removing defects of single crystal material and single crystal material from which defects are removed by the method
09/05/2002	US20020121242 Heat-treatment apparatus, heat-treatment method using the same and method of producing a semiconductor device
09/05/2002	US20020121238 Process for preparing single crystal silicon having improved gate oxide integrity
09/04/2002	EP0973964B1 Low defect density, self-interstitial dominated silicon
09/04/2002	EP0964943B1 METHOD FOR GROWING MONOCRYSTALS OF HIGH-TEMPERATURE SUPRACONDUCTORS MADE OF RARE EARTH-CUPRATES OF FORM SE1+xBa2-xCu3O7-delta
08/2002
08/29/2002	WO2002066714A2 Process for preparing single crystal silicon having improved gate oxide integrity
08/29/2002	US20020119659 Crystal growth method of an oxide and multi-layered structure of oxides
08/29/2002	US20020117105 Method of heat-treating fluoride crystal, method of producing optical part, and optical apparatus
08/28/2002	CN1366098A Vanadate for measuring dislocation density and etching process of doped monocrystal
08/27/2002	US6442736 Semiconductor processing system and method for controlling moisture level therein
08/27/2002	US6440823 Low defect density (Ga, Al, In)N and HVPE process for making same
08/27/2002	US6440242 Method of joining synthetic corundum, method of manufacturing synthetic corundum cell, and synthetic corundum cell
08/22/2002	WO2002065536A2 Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same
08/22/2002	WO2000022198A9 Thermally annealed, low defect density single crystal silicon
08/22/2002	US20020115266 Method and a system for sealing an epitaxial silicon layer on a substrate
08/22/2002	US20020114756 Tailoring nanocrystalline diamond film properties
08/20/2002	US6436728 Method for making an optical waveguide substrate
08/20/2002	US6436303 Film removal employing a remote plasma source
08/20/2002	US6436194 Method and a system for sealing an epitaxial silicon layer on a substrate
08/15/2002	WO2002063076A1 Method for reducing oxygen component and carbon component in fluoride
08/15/2002	US20020110934 Rapid- temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same
08/15/2002	US20020108556 Bonded, walk-off compensated optical elements
08/14/2002	EP1127175B1 Process for preparing defect free silicon crystals which allows for variability in process conditions
08/14/2002	DE10210021A1 Verfahren zur Herstellung von Halbleiterscheiben durch Abtrennen der Halbleiterscheiben von mindestens einem Kristallstück A process for producing semiconductor wafers by cutting the semiconductor wafers by at least one crystal piece
08/14/2002	CN1364309A Semiconductor wafer and production method therefor
08/13/2002	US6432824 Method for manufacturing a semiconductor wafer
08/08/2002	WO2002061185A1 Particle beam biaxial orientation of a substrate for epitaxial criystal growth
08/08/2002	WO2002061151A2 Method of forming nano-crystalline particles and produrct formed thereof
08/06/2002	US6429174 Large strongly linked superconducting monoliths and process for making the same
08/06/2002	US6428619 Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer
08/01/2002	WO2002059400A2 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
08/01/2002	US20020102820 Method of treating semiconductor film and method of fabricating semiconductor device

1 ... 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 ... 61