| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 07/22/1993 | WO1993014250A2 Process for surface treatment with ions |
| 07/20/1993 | US5229333 Method for improving the interface characteristics of CaF2 on silicon |
| 07/20/1993 | US5228927 Method for heat-treating gallium arsenide monocrystals |
| 07/15/1993 | DE4200382A1 Material application on surface of Gp=III-V semiconductor - by dipping in hydrogen halide alcohol soln., withdrawing, drying, and applying in inert atmos., for aluminium gallium arsenide surfaces |
| 07/13/1993 | US5226812 Vertical type heat-treating apparatus |
| 07/06/1993 | US5225367 Doping boron nitride and exposure to laser beam in vacuum |
| 06/29/1993 | US5223080 Method for controlling thickness of single crystal thin-film layer in soi substrate |
| 06/15/1993 | US5219632 Gallium arsenide |
| 06/10/1993 | WO1993011068A1 Conversion of fullerenes to diamond |
| 06/09/1993 | EP0545777A2 Method for manufacturing superconducting thin film formed of oxide superconductor having a portion of a reduced thickness, superconducting thin film manufactured thereby, and superconducting device utilizing the superconducting thin film |
| 06/09/1993 | EP0544934A1 Method of stabilizing the surface properties of objects to be thermally treated in a vacuum |
| 06/09/1993 | DE4140387A1 Appts. for processing semiconductor wafers in rapid thermal process - comprising substrate support plate with wafer arranged on it |
| 06/08/1993 | US5217564 Method of producing sheets of crystalline material and devices made therefrom |
| 05/27/1993 | WO1993010556A1 Apparatus for forming oxide film, heat treatment apparatus, semiconductor device, manufacturing method therefor |
| 05/27/1993 | WO1993010286A1 PRODUCTION OF CLEAN, WELL-ORDERED CdTe SURFACES USING LASER ABLATION |
| 05/18/1993 | US5211794 Wafer etching apparatus |
| 05/18/1993 | US5210959 Ambient-free processing system |
| 05/13/1993 | WO1993008984A1 Bistable magneto-optic single crystal films and method of producing same utilizing controlled defect introduction |
| 05/13/1993 | CA2122264A1 Bistable magneto-optic single crystal films and method of producing same utilizing controlled defect introduction |
| 05/11/1993 | US5209916 Conversion of fullerenes to diamond |
| 05/11/1993 | US5209811 Method for heat-treating gallium arsenide monocrystals |
| 05/04/1993 | US5207862 Rubbing surface, heating; channel waveguides |
| 04/29/1993 | WO1993008319A1 Reactor vessel for manufacture of superconducting films |
| 04/27/1993 | US5205872 Method of producing crystal bodies having controlled crystalline orientation |
| 04/27/1993 | US5205080 Jig for clamp-positioning single crystal ingot |
| 04/20/1993 | US5204681 Radio frequency automatic identification system |
| 04/14/1993 | EP0537004A1 Thermally stable dense electrically conductive diamond compacts |
| 04/14/1993 | EP0536958A1 Process for producing a semiconductor wafer |
| 04/13/1993 | US5201977 Process for producing structures from synthetic single-crystal pieces |
| 04/13/1993 | US5201145 Monocrystal ingot attitude-adjusting/surface-grinding/conveying apparatus |
| 04/10/1993 | CA2077825A1 Thermally stable dense electrically conductive diamond compacts |
| 04/06/1993 | CA1315648C Polysilicon thin film process and product |
| 04/01/1993 | WO1993006504A1 Radio frequency automatic identification system |
| 04/01/1993 | DE4131404A1 Expanding mosaic width of beryllium single crystal - using two deformation stages, the second stage carried out at higher temp. |
| 03/30/1993 | US5198071 Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer |
| 03/30/1993 | US5198070 Joining diamond bodies |
| 03/17/1993 | CN1070010A Domain twining removing method for potassium iodate crystal |
| 03/11/1993 | DE4129414A1 Ternary activated solder |
| 03/04/1993 | WO1992022921A3 Process for making superconducting tl-pb-sr-ca-cu oxide films and devices |
| 02/24/1993 | EP0528405A2 Ambient-free processing system |
| 02/24/1993 | CN1069299A Heat treatment for silicon infrared filter |
| 02/23/1993 | US5188757 Precursor compositions for conversion to boron nitride |
| 02/18/1993 | WO1993003210A1 Ion exchanged crystalline waveguides and processes for their preparation |
| 01/26/1993 | US5182790 Infrared optical fiber and a method of manufacturing the same |
| 01/20/1993 | EP0524050A1 Controlled dissolution of quartz |
| 01/20/1993 | CN1068157A Goldelectrodeless technique for lithium tantalate monocrystal |
| 01/19/1993 | US5180469 Method for slicing a semiconductor silicon single crystal |
| 01/12/1993 | US5177878 Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices |
| 01/05/1993 | US5176788 Method of joining diamond structures |
| 12/23/1992 | WO1992022921A2 PROCESS FOR MAKING SUPERCONDUCTING Tl-Pb-Sr-Ca-Cu OXIDE FILMS AND DEVICES |
| 12/22/1992 | US5173127 Semi-insulating inp single crystals, semiconductor devices having substrates of the crystals and processes for producing the same |
| 12/17/1992 | DE4119519A1 Transport and surface treatment of semiconductor materials - uses moving belts inside modular treatment chambers with movements which optimise the process to reduce contamination and cost |
| 12/01/1992 | US5167717 Apparatus and method for processing a semiconductor wafer |
| 12/01/1992 | US5167716 Method and apparatus for batch processing a semiconductor wafer |
| 11/03/1992 | US5160405 In oxygen and hydrogen, electron beam radiation, plasma, unmasked areas converted to graphite |
| 10/28/1992 | EP0510555A1 Process for the production of a layer system and layer system |
| 10/24/1992 | CA2066847A1 Method of producing a layer system and a layer system as produced thereby |
| 10/15/1992 | DE4214131A1 Macrocrystalline diamond monocrystal synthesis from graphite - by polymerising and applying required external electrostatic field |
| 09/30/1992 | EP0506146A2 Method of producing sheets of crystalline material |
| 09/23/1992 | EP0504712A1 Process for producing single crystal silicon carbide layer |
| 09/22/1992 | US5149675 Ring crystallization of wafers to prevent thermal shock |
| 09/17/1992 | DE4108394A1 Silicon@ substrate mfr. for DRAM components - comprises forming silicon@ mirror wafer and subjecting it to two=stage heat treatment process, then removing surface layer |
| 09/16/1992 | EP0503816A1 Heat treatment of Si single crystal |
| 09/16/1992 | EP0503814A1 Method for testing quality of silicon wafer |
| 09/08/1992 | US5146533 Potassium, rubidium, titanium and arsenic or phosphorus oxide single crystal |
| 09/08/1992 | US5146468 Gas doping of solids by crystal growth |
| 09/02/1992 | EP0501750A1 Single crystal microtip, preparation and applications thereof |
| 09/02/1992 | EP0501231A1 Process for the production of metal foils and their use |
| 08/25/1992 | US5141579 ProducingSi3 N4 composite by sheeting a mixture of Si3 N.sub. |
| 08/18/1992 | US5139998 Controlled thallous oxide evaporation for thallium superconductor films and reactor design |
| 08/12/1992 | EP0498297A1 Jig and method for clamp-positioning single crystal ingot |
| 08/11/1992 | US5137847 Method of producing GaAs single crystal substrate using three stage annealing and interstage etching |
| 08/04/1992 | US5135727 Neck clamp, cutter, visual cutting monitor mounted on chuck assembly |
| 07/23/1992 | DE4200185A1 Continuous semiconductor single crystal pulling - by periodic material addition to crucible and removal from bar outside the chamber |
| 07/21/1992 | US5132100 Optically active single crystal and fabrication process thereof |
| 07/15/1992 | CN1017487B Technology to control defect on silicon chip used for silicon semiconductor device |
| 07/07/1992 | US5128954 Impregnation of a solid from the gas phase |
| 06/30/1992 | US5126094 Heat treatment of an orthodontic bracket |
| 06/17/1992 | EP0490807A2 Ternary brazing based on a Zirconium/Nickel alloy |
| 06/17/1992 | EP0490692A1 Impregnation of a solid from the gas phase |
| 06/17/1992 | EP0490691A1 Gas doping of solids by crystal growth |
| 06/03/1992 | EP0488785A1 An automatic device for cutting the neck of a pulled single crystal ingot |
| 06/03/1992 | EP0488642A2 Method for controlling thickness of single crystal thin-film layer on soi substrate |
| 05/29/1992 | WO1992009101A1 Process for achieving controlled precipitation profiles in silicon wafers |
| 05/20/1992 | CN1061202A Lithium niobate crystal (ln) room-temperature corrosive and its application |
| 05/05/1992 | US5110404 High temperature followed by low temperature of oxygen |
| 05/05/1992 | CA1300080C Process for enhancing the color of topaz by irradiation and the product resulting |
| 04/29/1992 | EP0482372A1 Unsupported sintered cubic boron nitride/diamond conjoint compacts and their fabrication |
| 04/28/1992 | US5108778 Semiconductors |
| 04/24/1992 | CA2049672A1 Unsupported sintered cbn/diamond conjoint compacts and their fabrication |
| 04/22/1992 | EP0481723A1 A wafer etching apparatus |
| 04/21/1992 | CA1299070C Stress relief of single crystal superalloy articles |
| 04/15/1992 | EP0480789A2 Process for producing an oxide type crystallised thin layer by rapid annealing |
| 04/15/1992 | EP0480181A2 Method and apparatus for batch processing of a semiconductor wafer |
| 04/14/1992 | US5105254 Rod assembly for manufacturing large wafer for electronic devices |
| 04/09/1992 | DE3312595C1 Mirror for high powered laser - has copper mono-crystal surface with 100 or 111 orientation and etched structure |
| 04/07/1992 | US5102544 Apparatus for continuously removing crystals from a mother liquor and for washing the crystals |
| 04/01/1992 | EP0477698A1 Method for slicing a semiconductor silicon single crystal |
| 04/01/1992 | EP0233184B1 Semiconductor wafer flow treatment |
| 03/31/1992 | US5100839 Method of manufacturing wafers used for electronic device |