| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 03/25/2003 | US6537655 Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof |
| 03/20/2003 | WO2002066714A3 Process for preparing single crystal silicon having improved gate oxide integrity |
| 03/20/2003 | US20030054646 Using hydrofluoric acid and sulfuric acid; leaving polycry-stalline silicon, silicon nitride and/or aluminum containing layers intact |
| 03/20/2003 | US20030054641 Control of thermal donor formation in high resistivity CZ silicon |
| 03/20/2003 | US20030051657 Vacancy, dominated, defect-free silicon |
| 03/19/2003 | EP1293592A2 Silicon semiconductor substrate and preparation thereof |
| 03/19/2003 | EP1293591A2 Silicon semiconductor substrate and method for production thereof |
| 03/19/2003 | EP1137826B1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same |
| 03/13/2003 | WO2003021660A1 Production method for anneal wafer and anneal wafer |
| 03/13/2003 | WO2003020497A1 Free-standing (al, ga, in)n and parting method for forming same |
| 03/12/2003 | CN1402317A Semiconductor silicon wafer and mfg. method thereof |
| 03/11/2003 | US6531416 Method for heat treatment of silicon wafer and silicon wafer heat-treated by the method |
| 03/11/2003 | US6530381 Process for the wet-chemical surface treatment of a semiconductor wafer |
| 03/06/2003 | WO2002065536A3 Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same |
| 03/06/2003 | US20030044622 Having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. |
| 03/06/2003 | US20030042577 Semiconductor material having an equilibrium dopant solubility |
| 03/06/2003 | US20030042576 Method for enhancing the solubiilty of dopants in silicon |
| 03/06/2003 | US20030041798 Coated silicon wafer and process for its production |
| 03/04/2003 | US6527856 Flat in order to promote perfect two-dimensional epitaxial growth, and also provides A-site surface termination |
| 02/27/2003 | WO2003016600A1 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate |
| 02/25/2003 | US6525447 Method for manufacturing a langasite single crystal substrate, a langasite single crystal substrate, and a piezoelectric device |
| 02/25/2003 | US6524882 Method of producing p-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same |
| 02/19/2003 | EP1284311A2 Silicon semiconductor substrate and process for producing the same |
| 02/18/2003 | US6521496 Non-volatile memory semiconductor device including a graded, grown, high quality control gate oxide layer and associated methods |
| 02/13/2003 | WO2003012178A1 Crystal stacking substrate, crystal layer, device, and their manufacturing method |
| 02/13/2003 | US20030032307 Layering nitrided oxide on a silicon substrate |
| 02/13/2003 | US20030032268 Semiconductor material and method for enhancing solubility of a dopant therein |
| 02/13/2003 | US20030029375 Silicon single crystal wafer fabricating method and silicon single crystal wafer |
| 02/12/2003 | EP1282912A1 Adjusting defect profiles in crystal or crystalline structures |
| 02/12/2003 | CN1396634A Operating method of wafer etching machine |
| 02/12/2003 | CN1396316A Anode oxidizing process for treating surface of porous silicon |
| 02/12/2003 | CN1396315A Cathode reduction process for treating surface of porous silicon |
| 02/06/2003 | US20030024472 Wafer produced thereby, and associated methods and devices using the wafer |
| 02/05/2003 | EP1281196A1 Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam |
| 02/05/2003 | CN1395322A Method for manufacturing nitride semiconductor and method for making semiconductor device |
| 01/30/2003 | WO2003009017A1 Method for producing optical member |
| 01/30/2003 | WO2003008676A1 Method for preparing tungstate single crystal |
| 01/30/2003 | WO2002095804A8 Method and device for the thermal treatment of substrates |
| 01/30/2003 | US20030022003 Controlling distribution of defects |
| 01/30/2003 | US20030020045 Single crystals of a tungstate are arranged in a crystal orientation so the crystal face where atoms maintain dense configuration and the incident direction of the radiation are in parallel with each other |
| 01/29/2003 | CN1393914A Quick annealing, silicon wafer produced by annealing and equipment for pulling crystal using direct pulling |
| 01/23/2003 | WO2002061151A3 Method of forming nano-crystalline particles and produrct formed thereof |
| 01/23/2003 | US20030017716 In-situ post epitaxial treatment process |
| 01/21/2003 | US6509230 Non-volatile memory semiconductor device including a graded, grown, high quality oxide layer and associated methods |
| 01/16/2003 | WO2003005443A2 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure |
| 01/16/2003 | US20030010280 Epitaxial semiconductor wafer and a manufacturing method thereof |
| 01/16/2003 | US20030010275 Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same |
| 01/15/2003 | EP1276141A1 Method for manufacturing annealed wafer and annealed wafer |
| 01/15/2003 | CN1098760C Manufacture of vibrating sheets |
| 01/09/2003 | WO2003003441A1 Production method for anneal wafer and anneal wafer |
| 01/09/2003 | US20030008479 Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing |
| 01/09/2003 | US20030008447 Method of producing epitaxial wafers |
| 01/09/2003 | US20030008418 Methods of microstructuring ferroelectric materials |
| 01/09/2003 | US20030008077 Process for imparting and enhancement of colours in gemstone minerals and gemstone minerals obtained thereby |
| 01/08/2003 | EP1273684A2 Low defect density, vacancy dominated silicon |
| 01/08/2003 | EP1272265A1 High temperature/high pressure colour change of diamond |
| 01/08/2003 | EP1272264A1 High temperature/high pressure colour change of diamond |
| 01/07/2003 | US6503594 Silicon wafers having controlled distribution of defects and slip |
| 01/07/2003 | US6503335 Centrifuge and method for centrifuging a semiconductor wafer |
| 01/07/2003 | US6503321 To form a damage layer at an implantation depth below a top surface of said crystal structure, and chemically etching the damage layer to detach a single crystal film from the crystal structure; optoelectronic devices |
| 01/07/2003 | US6503320 Remote-control, crystal-annealing, cold-stream blocking device and method |
| 01/03/2003 | WO2003001580A1 Thermal oxidation process control by controlling oxidation agent partial pressure |
| 01/03/2003 | WO2003000964A1 METHOD FOR PREPARING GaN BASED COMPOUND SEMICONDUCTOR CRYSTAL |
| 01/02/2003 | US20030003773 Method for manufacturing annealed wafer and annealed wafer |
| 01/02/2003 | EP1271636A1 Thermal oxidation process control by controlling oxidation agent partial pressure |
| 01/02/2003 | EP1269229A1 Optical device |
| 01/02/2003 | EP1268885A1 Method and apparatus for large-scale diamond polishing |
| 01/02/2003 | EP1268884A1 Method and device for making substrates |
| 12/31/2002 | US6501191 Heat treatment apparatus and method |
| 12/31/2002 | US6500255 Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defects |
| 12/27/2002 | WO2002103413A1 Optical member, process for producing the same, and projection aligner |
| 12/27/2002 | WO2002103096A1 Method of making nanotube-based material with enhanced electron field emission properties |
| 12/27/2002 | WO2002103091A1 SILICON SINGLE CRYSTAL WAFER HAVING VOID DENUDED ZONE ON THE SUFRACE AND DIAMETER OF AVOBE 300 mm AND ITS PRODUCTION METHOD |
| 12/27/2002 | CA2450261A1 Method of making nanotube-based material with enhanced electron field emission properties |
| 12/24/2002 | US6498078 Method for enhancing the solubility of boron and indium in silicon |
| 12/19/2002 | WO2002101121A1 High surface quality gan wafer and method of fabricating same |
| 12/19/2002 | US20020193040 Method of making nanotube-based material with enhanced electron field emission properties |
| 12/19/2002 | US20020192978 Method and apparatus for stabilizing high pressure oxidation of a semiconductor device |
| 12/19/2002 | US20020192372 Organic film vapor deposition method and a scintillator panel |
| 12/19/2002 | US20020190223 Organic film vapor deposition method and a scintillator panel |
| 12/19/2002 | US20020189532 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| 12/18/2002 | EP1266983A1 Methods of microstructuring ferroelectric materials |
| 12/18/2002 | EP1266251A1 Ion exchange waveguides and methods of fabrication |
| 12/12/2002 | US20020187658 Method for manufacturing silicon mirror wafer, silicon mirror wafer, and heat treatment furnace |
| 12/12/2002 | US20020185669 Epitaxial ferroelectric thin-film device and method of manufacturing the same |
| 12/12/2002 | US20020185057 Process for growing calcium fluoride monocrystals |
| 12/12/2002 | US20020185054 High surface quality gan wafer and method of fabricating same |
| 12/12/2002 | DE10127073A1 Verfahren zur Behandlung heteroepitaktischer Halbleiterschichten auf Siliziumsubstraten A method of treating heteroepitaxial semiconductor layers on silicon substrates, |
| 12/11/2002 | EP1264012A1 Method for producing crystals and/or crystal materials containing fluorine |
| 12/11/2002 | EP1264011A1 Iii-v nitride substrate boule and method of making and using the same |
| 12/10/2002 | US6492712 High quality oxide for use in integrated circuits |
| 12/05/2002 | WO2002097173A2 Semi-insulating silicon carbide without vanadium domination |
| 12/05/2002 | US20020182863 Method of heat treating fluoride crystal |
| 12/05/2002 | US20020182823 Wafer oxidation reactor and a method for forming a semiconductor device |
| 12/05/2002 | CA2446818A1 Semi-insulating silicon carbide without vanadium domination |
| 12/04/2002 | EP1263030A2 Method for processing heteroepitaxial semiconducting layers on silicon substrates |
| 12/04/2002 | EP1261755A1 Device and method for carrying out plasma enhanced surface treatment of substrates in a vacuum |
| 12/03/2002 | US6489241 Apparatus and method for surface finishing a silicon film |
| 12/03/2002 | US6489220 Method and a system for sealing an epitaxial silicon layer on a substrate |
| 12/03/2002 | US6488767 High surface quality GaN wafer and method of fabricating same |