| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 01/10/2001 | EP1067585A2 Method and a system for sealing an epitaxial silicon layer on a substrate |
| 01/09/2001 | US6171104 Oxidation treatment method and apparatus |
| 01/04/2001 | WO2001001466A1 Oxidation of silicon on germanium |
| 01/04/2001 | WO2001001465A1 Cyclic thermal anneal for dislocation reduction |
| 01/04/2001 | WO2001000907A1 Polishing of fluoride crystal optical lenses and preforms using cerium oxide for microlithography |
| 01/04/2001 | DE19927806A1 Vorrichtung und Verfahren zum Hochratenätzen eines Substrates mit einer Plasmaätzanlage und Vorrichtung und Verfahren zum Zünden eines Plasmas und Hochregeln oder Pulsen der Plasmaleistung Apparatus and method for Hochratenätzen a substrate with a plasma etching system and apparatus and method for igniting a plasma and high rules or pulsing the plasma power |
| 01/03/2001 | EP1065703A2 Vacuum processing method and apparatus |
| 01/03/2001 | EP1065026A1 Method for manufacturing or repairing cooling channels in single crystal gas turbine components |
| 01/03/2001 | CN1060234C High-temperature heat treatment method for mercury cadmium telluride material |
| 01/02/2001 | US6168638 Touchless stabilizer for processing spherical shaped devices |
| 01/02/2001 | CA2172233C Slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure |
| 12/28/2000 | WO2000079580A1 Method of manufacturing semiconductor device |
| 12/28/2000 | WO2000079579A2 Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma output or adjusting the same upwards |
| 12/28/2000 | DE19927527A1 Process for wet chemical treatment of a semiconductor wafer has a circuit to transport the treatment liquid between a storage tank and a container, and a circuit to transport the liquid enriched with gas back into the tank |
| 12/21/2000 | WO2000077281A1 Encapsulation of crystals via multilayer coatings |
| 12/20/2000 | EP1060509A1 Crystal ion-slicing of single-crystal films |
| 12/20/2000 | EP1060300A2 Abo 3? perovskite with a step |
| 12/20/2000 | CN1277755A Surface acoustic wave device |
| 12/19/2000 | US6162730 Method for fabricating semiconductor wafers |
| 12/14/2000 | WO2000075405A1 Crystal growth and annealing method and apparatus |
| 12/12/2000 | US6159284 Process and device for producing a cylindrical single crystal and process for cutting semiconductor wafers |
| 12/12/2000 | US6158952 Oriented synthetic crystal assemblies |
| 12/12/2000 | CA2051154C Method of producing electronic, electrooptical and optical components |
| 12/07/2000 | WO2000073543A1 Doping of crystalline substrates |
| 12/05/2000 | US6156581 Reacting a vapor-phase gallium aluminum indium composition with a vapor-phase nitrogenous compound in the presence of a substrate to grow a gallium aluminum indium nitride base layer on the substrate, thereby yielding a microelectronic device |
| 12/05/2000 | US6156119 Silicon single crystal and method for producing the same |
| 11/30/2000 | WO2000071787A2 Semi-insulating silicon carbide without vanadium domination |
| 11/30/2000 | WO2000071342A1 Contacted crystal surface protector and method |
| 11/30/2000 | DE19923385A1 Centrifuge for semiconductor disc, has apparatus which generates layer-like gas flow provided in casing which separates centrifugation process area and semiconductor disc from peripheral outer air |
| 11/29/2000 | EP1055749A1 Process for producing a semiconductor wafer |
| 11/28/2000 | US6153496 Process for the production of polycrystalline silicon mouldings substantially free of edge regions and the use of these mouldings |
| 11/28/2000 | US6153166 Single crystal SIC and a method of producing the same |
| 11/28/2000 | US6153165 A complex in which a polycrystalline plate consisting of silicon and carbon atoms is stacked on the surface of a single crystal silicon carbide base and is subjected to heat treatment, which transforms polycrystals to single crystal |
| 11/23/2000 | WO2000070130A1 Etching method and article processed by the method |
| 11/22/2000 | CN1058761C Heat treating appts. for mercury-cadmium tellurid |
| 11/21/2000 | US6150275 Micromechanical system fabrication method using (111) single crystalline silicon |
| 11/16/2000 | WO2000068984A1 Method for cleaning a silicon substrate surface and use for making integrated electronic components |
| 11/16/2000 | WO2000034999A3 An epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof |
| 11/16/2000 | DE19922257A1 Process for building in slits in silicon wafers comprises producing hole structures longitudinal to the slits by pore etching, and connecting the hole structures to the slits by chemical etching |
| 11/16/2000 | DE19922167A1 Verfahren zur Herstellung einer Halbleiterscheibe A process for producing a semiconductor wafer |
| 11/15/2000 | EP1052313A1 Silicon wafer and method of manufacture thereof |
| 11/14/2000 | US6146457 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
| 11/14/2000 | US6146456 Method for annealing single crystal fluoride and method for manufacturing the same |
| 11/08/2000 | EP0946974A4 Forming a crystalline semiconductor film on a glass substrate |
| 11/08/2000 | CN1272957A Method for thermal curing of implantation-doped silicon carbide semiconductors |
| 11/07/2000 | US6143267 Plate-like single crystal silicon carbide pieces are stacked while crystal orientation faces are arranged in same plane and crystal orientations are directionally unified and plate of silicon and carbon atoms is stacked on faces |
| 11/07/2000 | US6143071 Method for heat treatment of silicon substrate, substrate treated by the method, and epitaxial wafer utilizing the substrate |
| 11/07/2000 | CA2204394C Silicon-germanium-carbon compositions and processes thereof |
| 11/02/2000 | WO2000065642A1 Production methods of compound semiconductor single crystal and compound semiconductor element |
| 10/31/2000 | US6139625 Method for producing a silicon single crystal wafer and a silicon single crystal wafer |
| 10/25/2000 | EP1047190A1 Surface acoustic wave device |
| 10/19/2000 | WO2000061841A1 Slicing of single-crystal films using ion implantation |
| 10/19/2000 | CA2365992A1 Slicing of single-crystal films using ion implantation |
| 10/17/2000 | US6134043 Composite photonic crystals |
| 10/17/2000 | US6132506 Method for the heat treatment of ZnSe crystal |
| 10/11/2000 | EP1043768A1 Process for producing semiconductor substrate |
| 10/10/2000 | US6129787 Semiconductor silicon wafer, semiconductor silicon wafer fabrication method and annealing equipment |
| 10/05/2000 | WO2000059016A2 Method for producing thin, uniform oxide layers on silicon surfaces |
| 10/04/2000 | EP1041179A1 Single-crystal optical element having flat light-transmitting end surface inclined relative to cleavage plane |
| 10/03/2000 | US6127288 Method of thermally processing semiconductor wafer |
| 09/26/2000 | US6124211 Cleaning method |
| 09/26/2000 | US6124209 Method for treating a surface of a silicon single crystal and a method for manufacturing a silicon single crystal thin film |
| 09/20/2000 | EP1036850A1 Ni-BASED SINGLE CRYSTAL ALLOY HAVING COATING FILM FOR PREVENTING RECRYSTALLIZATION FRACTURE |
| 09/19/2000 | US6121117 Process for producing semiconductor substrate by heat treating |
| 09/19/2000 | US6120597 Crystal ion-slicing of single-crystal films |
| 09/13/2000 | EP1035235A1 Method for producing silicon single crystal wafer and silicon single crystal wafer |
| 09/13/2000 | EP1034567A1 Single electron devices |
| 09/13/2000 | CN1266112A Decarbonization colour-removing annealing method for sapphire crystal |
| 09/12/2000 | US6117346 Process for forming a microstructure in a substrate of a ferroelectric single crystal |
| 09/05/2000 | US6114287 Overcoating with ductile buffer; deforming |
| 08/30/2000 | CN1264759A Annealing equipment for high-temp oxide crystal |
| 08/29/2000 | US6110839 Dissolving metallic silicon and/or silicon compounds in an alkaline solution and neutralizing metallic ions in the alkaline solution by reaction products of hydrogen and silicates generated by reacting silicon and alkali |
| 08/16/2000 | EP1027483A1 Method of polishing cvd diamond films by oxygen plasma |
| 08/10/2000 | DE19903125A1 Verfahren zur Trocknung von Proteinkristallen Process for drying protein crystals |
| 08/08/2000 | US6099748 Silicon wafer etching method and silicon wafer etchant |
| 08/03/2000 | WO2000044767A2 Method for drying protein crystals |
| 08/02/2000 | CN1261928A Low defect density silicon |
| 07/25/2000 | US6093648 Production method for a discrete structure substrate |
| 07/19/2000 | EP1019953A1 Method for thermal curing of implantation-doped silicon carbide semiconductors |
| 07/13/2000 | WO2000015882A3 Method for switching the properties of perovskite materials |
| 07/05/2000 | EP1017091A2 A processing method of silicon wafer and a processing apparatus |
| 07/05/2000 | EP1015936A1 Method and arrangement for poling of optical crystals |
| 07/05/2000 | CN1258765A Rare-earth compound pulp and surface sculpture method for diamond thick-film |
| 07/04/2000 | US6083812 Heteroepitaxy by large surface steps |
| 06/29/2000 | WO2000037720A1 Bonding method of synthetic corundum, production method of synthetic corundum cell, and the synthetic corundum cell |
| 06/28/2000 | EP1013802A1 Method of joining synthetic corundum, method of manufacturing synthetic corundumcell, and corundum cell |
| 06/27/2000 | US6080235 Geometric shape control of thin film ferroelectrics and resulting structures |
| 06/21/2000 | CN1257556A Low defect density ideal oxygen precipitating silicon |
| 06/20/2000 | US6077787 Method for radiofrequency wave etching |
| 06/15/2000 | WO2000034999A2 An epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof |
| 06/15/2000 | WO2000034553A1 Silicon wafer and method of manufacture thereof |
| 06/14/2000 | EP1007771A1 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
| 06/14/2000 | EP1007768A2 Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature |
| 06/14/2000 | CN1256723A Low defect density, ideal oxygen precipitating silicon |
| 06/08/2000 | WO2000032853A1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same |
| 06/07/2000 | EP1006089A1 Infrared crystalline optical fibre |
| 06/07/2000 | CN1255556A Single crystal transition control |
| 06/06/2000 | US6072854 Method and apparatus for X-ray topography of single crystal ingot |
| 06/06/2000 | US6071337 Apparatus and method for producing crystals by the czochralski method and crystals produced by this method |
| 05/31/2000 | EP1004690A1 Single crystal conversion control |