| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 11/07/1995 | US5463975 Process for producing crystal |
| 11/02/1995 | EP0680100A2 Thin wafers processing and solarcells made of crystalline silicon |
| 10/31/1995 | US5462776 Energizing fullerene molecule by passage over a hot filament causing fragmentation and ionization by electron attachment or emission, depositing on diamond substrate causing thicknes of diamond or diamond-like film on substrate surface |
| 10/18/1995 | EP0677870A2 Controlled etching of oxides via gas phase reactions |
| 10/03/1995 | US5454902 Production of clean, well-ordered CdTe surfaces using laser ablation |
| 10/03/1995 | US5454347 Laser-beam annealing apparatus |
| 09/12/1995 | US5449532 Method of manufacturing silicon substrate |
| 09/06/1995 | CN1029694C Heat treating method for nitrogenous straight-pulled silicon single crystal |
| 08/30/1995 | EP0399054B1 Production method of crystal member having controlled crystal orientation |
| 08/29/1995 | US5445522 Combustion device |
| 08/23/1995 | EP0668377A1 Method for enhancing the toughness of manufactured diamond |
| 08/22/1995 | US5443032 Method for the manufacture of large single crystals |
| 08/15/1995 | US5441803 No bonding agents: surfaces diffusion bonded by gradual heating and cooling; avoids thermal shock and removes stress by annealing |
| 08/08/1995 | US5439723 Substrate for producing semiconductor wafer |
| 08/08/1995 | US5439553 Controlled etching of oxides via gas phase reactions |
| 08/03/1995 | WO1995020695A1 Method of making single crystal gallium nitride |
| 08/01/1995 | US5437761 Annealing; lapping; polishing; determination of difference between the maximum and minimum absorption coefficients at a wavelength of 2.87 micrometers |
| 07/11/1995 | US5432120 Method for producing a laterally limited single-crystal region with selective epitaxy and the employment thereof for manufacturing a bipolar transistor as well as a MOS transistor |
| 07/06/1995 | WO1995012212A3 Method of producing large polycrystalline plates from optical and scintillation materials |
| 07/04/1995 | US5429711 Method for manufacturing wafer |
| 06/28/1995 | EP0660140A1 Method for making a relief structure on a substrate from semiconductor material |
| 06/27/1995 | US5427055 Method for controlling roughness on surface of monocrystal |
| 06/20/1995 | US5426310 Heating in an ozone atmosphere to reduce the oxygen vacancies of material to improve light absorption |
| 06/20/1995 | US5426068 Method of manufacturing compound semiconductor wafer |
| 05/31/1995 | EP0655423A1 Method of making infrared crystalline fiber and product |
| 05/16/1995 | US5416045 Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films |
| 05/09/1995 | US5413521 Inner diameter saw slicing machine |
| 05/04/1995 | WO1995012212A2 Method of producing large polycrystalline plates from optical and scintillation materials |
| 05/04/1995 | WO1995012013A1 Diamond film growth from fullerene precursors |
| 05/04/1995 | DE4438398A1 Heat treatment process for compound semiconductors |
| 05/03/1995 | EP0650465A1 Conversion of fullerenes to diamond |
| 05/02/1995 | US5411723 KTiOPO4 |
| 04/18/1995 | US5407350 Heat-treatment apparatus |
| 04/18/1995 | US5407349 Exhaust system for high temperature furnace |
| 04/11/1995 | US5405285 Machining error correction apparatus |
| 04/04/1995 | US5403619 Reaction and polishing takes place at the interface between oxygene superionic conductor and dimond or carbonitride film to form volatile carbon mono or dioxide, resulting in their removal |
| 04/04/1995 | US5403406 Containing oxygen precipitate nucleation centers; integrated circuits, semiconductors; trapping effect |
| 03/28/1995 | US5400548 Process for manufacturing semiconductor wafers having deformation ground in a defined way |
| 03/28/1995 | US5400489 Spin-on glass |
| 03/16/1995 | DE3844729C2 Coated silicon carbide whiskers for ceramic matrix composites |
| 03/15/1995 | EP0643158A1 Process for producing single crystal of potassium niobate |
| 03/15/1995 | EP0642425A1 Method of fabricating group iii-v compound semiconductor devices using selective etching |
| 03/14/1995 | US5397430 Controlled dissolution of quartz |
| 03/07/1995 | US5395794 Method of treating semiconductor materials |
| 03/07/1995 | US5395482 Ultra high purity vapor phase treatment |
| 02/28/1995 | US5394420 Multiform crystal and apparatus for fabrication |
| 02/15/1995 | EP0638670A1 Method for enhancing the toughness of manufactured diamond |
| 02/07/1995 | US5386796 Method for testing quality of silicon wafer |
| 02/02/1995 | DE4325543A1 Process and apparatus for the wet chemical treatment of silicon material |
| 01/31/1995 | US5386118 Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal |
| 01/31/1995 | US5385762 Damaging the surface by doping a low concentration carbon ion at low temperature, then with dopant atoms, annealing rapidly to diffuse into lattice crystal structure |
| 01/26/1995 | WO1995002897A1 Chemical vapor deposition process for fabricating layered superlattice materials |
| 01/25/1995 | EP0635879A2 Semiconductor silicon wafer and process for producing it |
| 01/18/1995 | EP0633953A1 Process for reducing damage susceptibility in optical-quality crystals |
| 01/18/1995 | EP0633952A1 Process for reducing the damage susceptibility of optical quality crystals. |
| 01/18/1995 | CN1027459C Annealing process for monocrystal of chromium containing zinc tungstate |
| 01/17/1995 | US5382758 Diamond substrates having metallized vias |
| 01/11/1995 | EP0633086A1 Inner diameter saw slicing machine |
| 01/11/1995 | EP0613418A4 Bistable magneto-optic single crystal films and method of producing same utilizing controlled defect introduction. |
| 01/04/1995 | EP0605650A4 Radio frequency automatic identification system. |
| 12/20/1994 | US5374328 Method of fabricating group III-V compound |
| 12/07/1994 | EP0627506A1 CdTe crystal for use in radiation detector and method of manufacturing such CdTe crystal |
| 12/06/1994 | US5370855 Conversion of fullerenes to diamond |
| 11/30/1994 | CN1026805C Blended niobic acid Li Crystal polarization process and unit |
| 11/24/1994 | WO1994027328A1 Process for at least partially converting semi-conductor films of the i-iii-vi2-type |
| 11/23/1994 | EP0625218A1 Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ions. |
| 11/08/1994 | US5362682 Method of producing sheets of crystalline material and devices made therefrom |
| 10/26/1994 | EP0620870A1 Process for surface treatment with ions |
| 10/26/1994 | CN1026343C Heating treatment process for silicon infrared filter |
| 10/18/1994 | US5356869 Metal oxide superconducting powder comprised of flake-like single crystal particles |
| 10/18/1994 | CA2001934C Rod assembly for manufacturing large wafers for electronic devices |
| 10/12/1994 | EP0619600A2 Method for etching boron nitride |
| 10/11/1994 | CA1332342C Process for producing crystal |
| 10/05/1994 | EP0618043A1 Article comprising polycrystalline diamond, and method of shaping the diamond |
| 10/04/1994 | US5352615 Denuding a semiconductor substrate |
| 10/04/1994 | US5351938 A high density graphite or boron nitride crucible for melting the alloy, forcing through an opening at bottom, solidifying on a rotated metal drum; efficiency; pressure sensor |
| 09/29/1994 | WO1994021557A1 Conversion of fullerenes to diamond |
| 09/29/1994 | WO1994021474A1 Method of fabricating group iii-v compound semiconductor devices using selective etching |
| 09/21/1994 | EP0615954A1 Red diamond, pink diamond and method of producing the same |
| 09/14/1994 | EP0615005A2 Lithium niobate crystal wafer, process for the preparation of the same, and method for the evaluation thereof |
| 09/14/1994 | EP0615004A1 Method of polishing/flattening diamond |
| 09/07/1994 | EP0614216A1 Apparatus for forming oxide film, heat treatment apparatus, semiconductor device, manufacturing method therefor |
| 09/07/1994 | EP0613418A1 Bistable magneto-optic single crystal films and method of producing same utilizing controlled defect introduction. |
| 09/06/1994 | US5344720 Bistable magneto-optic single crystal films and method of producing same utilizing controlled defect introduction |
| 08/30/1994 | US5342828 Superconducting Tl-Pb-Sr-Ca-Cu-O thin film |
| 08/30/1994 | US5342022 Method of making infrared crystalline fiber |
| 08/25/1994 | DE4305297A1 Texturing pickle for semiconductors, and use thereof |
| 08/18/1994 | WO1994018695A1 Apparatus for heat treatment |
| 08/17/1994 | EP0611091A1 Process for making metallized vias in diamond substrates |
| 08/17/1994 | EP0610563A2 Semiconductor ingot machining method |
| 08/10/1994 | EP0609799A2 Improvements in heteroepitaxy by large surface steps |
| 08/10/1994 | CN1025634C Optical dioptric device of barium stronium crystal and making method thereof |
| 08/03/1994 | EP0608890A1 Machining error correction apparatus |
| 08/02/1994 | US5334344 Ternary active brazing based on a zirconium-nickel alloy |
| 07/21/1994 | WO1994016124A1 Method and apparatus for predicting crystal quality of single-crystal semiconductor |
| 07/13/1994 | EP0605650A1 Radio frequency automatic identification system |
| 07/12/1994 | US5328715 Process for making metallized vias in diamond substrates |
| 07/12/1994 | US5328676 Vapor deposition fullerenes and energizing to form ions then coating and growing |
| 07/12/1994 | US5328550 And metalllic impurities that lower the melting point and |
| 07/12/1994 | US5328549 Method of producing sheets of crystalline material and devices made therefrom |