Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
12/2004
12/23/2004WO2004112116A1 Method for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method
12/23/2004WO2004110958A1 Method of joining ceramics : reaction diffusion-bonding
12/23/2004WO2003097532A8 Process for manufacturing a gallium rich gallium nitride film
12/23/2004US20040259337 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element
12/23/2004US20040255860 Rapid thermal processing apparatus and methods
12/23/2004US20040255842 Lithium tantalate substrate and method of manufacturing same
12/22/2004EP1489654A1 LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD, AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE MONOCRYSTALLINE THIN FILM
12/22/2004EP1489653A2 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element
12/22/2004EP1488450A2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
12/21/2004US6833192 Coating bio-crystal template polymers with alternating layers of charged polyelectrolytes and/or nanparticles
12/16/2004US20040253796 Method for manufacturing gallium nitride (GaN) based single crystalline substrate
12/16/2004US20040250753 Method for forming carbon nanotubes with post-treatment step
12/15/2004EP1485956A1 Process of producing multicrystalline silicon substrate and solar cell
12/15/2004CN2663439Y Furnace tube apparatus capable of improving homogeneity of thin oxide layer
12/15/2004CN1555500A Photolithographic method and uv transmitting fluoride crystals with minimized spatial dispersion
12/15/2004CN1555499A Photolithographic uv transmitting mixed fluoride crystal
12/09/2004WO2004106599A1 Single-crystal-like materials
12/09/2004WO2004105931A1 Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride
12/09/2004CA2529868A1 Single-crystal-like materials
12/08/2004EP1483782A1 Production method of sic monitor wafer
12/08/2004EP1483427A1 Directed assembly of highly-organized carbon nanotube architectures
12/07/2004US6827251 Method for joining
12/02/2004WO2004104275A1 Electromagnetic rotation of platter
12/02/2004US20040242001 Notched compound semiconductor wafer
12/02/2004US20040241975 Method of fabricating heteroepitaxial microstructures
12/02/2004DE10320212A1 Verfahren zum Texturieren von Oberflächen von Silizium-Scheiben Method for texturing surfaces of silicon wafers
12/01/2004EP1482549A1 Microstructure and its method of fabrication
12/01/2004CN1551824A Free-standing (Al, Ga, In)N and parting method for forming same
11/2004
11/25/2004US20040232803 Piezoelectric single crystal device and fabrication method thereof
11/25/2004US20040231759 Production method for anneal wafer and anneal wafer
11/25/2004US20040231582 Annealing method for halide crystal
11/25/2004DE102004022053A1 Verfahren zur Herstellung eines optischen Fluoridkristalls A method for producing an optical fluoride crystal
11/24/2004EP1479796A2 Piezoelectric single crystal device and fabrication method thereof
11/24/2004EP1478482A2 Method of removing casting defects
11/24/2004CN1548591A Quick annealing method
11/23/2004US6821344 Czochralski pullers including heat shield housings having sloping top and bottom
11/23/2004US6821338 Particle beam biaxial orientation of a substrate for epitaxial crystal growth
11/18/2004WO2004100244A1 Method for texturing surfaces of silicon wafers
11/18/2004WO2004090201A3 Method for the production of monocrystalline crystals
11/17/2004CN1547764A Production method for anneal wafer and anneal wafer
11/17/2004CN1547629A Method of making nanotube-based material with enhanced electron field emission properties
11/16/2004US6819693 Sapphire monocrystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same
11/11/2004US20040223212 Fluoride crystal material for optical element to be used for photolithography apparatus and method for producing the same
11/11/2004US20040221793 Method for producing an optical fluoride crystal without annealing
11/10/2004EP1475464A1 Method for producing an optical fluoride crystal
11/10/2004CN1545137A Gas-filled annealing furnace
11/10/2004CN1175472C Method for producing semiconductor film and the method for producing solar energy cell using said film
11/09/2004US6814801 Method for producing semi-insulating resistivity in high purity silicon carbide crystals
11/04/2004WO2004079786A3 Apparatus and method for reducing impurities in a semiconductor material
11/04/2004US20040219800 Thermal oxidation process control by controlling oxidation agent partial pressure
11/04/2004US20040219793 Method and apparatus for treating article to be treated
11/04/2004DE10316214A1 Detection of defects at crystal surface, etches surface using gas flow to reveal defects as result of differential etching rates
11/02/2004US6811612 Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices
11/02/2004US6811610 Method of making enhanced CVD diamond
11/02/2004US6811606 Manufacturing method for calcium fluoride and calcium fluoride for photolithography
10/2004
10/28/2004US20040211355 Oxygen-doped n-type gallium nitride freestanding single crystal substrate
10/28/2004DE19740904B4 Verfahren zum Beseitigen von Sauerstoff-Restverunreinigungen aus tiegelgezogenen Siliziumwafern A method for removing residual oxygen impurities from the crucible pulled silicon wafers
10/27/2004EP1470573A2 Method for producing a semiconductor element
10/27/2004CN1541287A High surface quality GaN wafer and method of fabricating same
10/27/2004CN1540818A Self modulated laser crystal and preparation method
10/27/2004CN1540045A Lithium tantanate substrate and its prepn. process
10/26/2004US6809011 Adjusting of defect profiles in crystal or crystalline-like structures
10/26/2004US6809010 Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same
10/26/2004US6808564 In-situ post epitaxial treatment process
10/21/2004WO2004090522A1 Method and apparatus for x-ray topography of single crystal ingot
10/21/2004WO2004090201A2 Method for the production of monocrystalline crystals
10/21/2004WO2004048258A3 Method for forming carbon nanotubes
10/21/2004US20040209144 Gas storage medium and methods
10/21/2004US20040206298 Method for producing semi-insulating resistivity in high purity silicon carbide crystals
10/19/2004US6806199 Method for manufacturing silicon mirror wafer, silicon mirror wafer, and heat treatment furnace
10/19/2004US6806144 Forming thin films of silicon oxide on silicon wafers, by heating in furnaces having gas flow passageways, then purging with inert gases to remove impurities; oxidation
10/19/2004US6805743 Method for manufacturing single-crystal-silicon wafers
10/19/2004US6805742 Silicon semiconductor substrate and process for producing the same
10/14/2004WO2004088762A2 Manufacture of high critical temperature superconducting part using uniaxial pressure during oxygenation step
10/14/2004US20040200551 Superelastic element made of a copper alloy and method for imparting a curvature of a given geometry
10/13/2004EP1467405A1 Method for gettering transition metal impurities in silicon crystal
10/13/2004EP1466199A2 Three-dimensional photonic crystal waveguide structure
10/13/2004EP1466026A2 Superelastic element made of a copper alloy and method for imparting and preserving a curvature of a given geometry
10/12/2004US6803331 Process for the heat treatment of a silicon wafer, and silicon wafer produced
10/12/2004US6803071 Paraelectric thin film semiconductor material and method for producing the same
10/12/2004US6803028 Method of making stoichiometric lithium niobate
10/12/2004US6802926 Method of producing semiconductor thin film and method of producing solar cell using same
10/12/2004US6802712 Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system
10/07/2004WO2004085719A1 An annealing method for ytterbium-doped yttrim aluminum garnet crystal
10/07/2004WO2003072284A8 Method of removing casting defects
10/07/2004US20040197936 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate
10/07/2004US20040194692 Silicon annealed wafer and silicon epitaxial wafer
10/06/2004EP1465264A1 Manufacture of high critical temperature superconducting part using uniaxial pressure during oxygenation step
10/06/2004EP1464992A1 Fluoride crystal material for optical device used for photolithographic apparatus and its manufacturing method
10/06/2004EP1463971A2 INTEGRATED CRYSTAL MOUNTING AND ALIGNMENT SYSTEM FOR HIGH−THROUGHPUT BIOLOGICAL CRYSTALLOGRAPHY
10/06/2004CN1535081A Thin plate display device and its manufacturing method
10/06/2004CN1534735A Rectangular nitride semiconductor substrate capable of identifying outside and inside
10/05/2004US6800137 Binary and ternary crystal purification and growth method and apparatus
09/2004
09/30/2004WO2004083499A1 PROCESS FOR PRODUCING GaN SUBSTRATE
09/30/2004US20040192071 Production method for anneal wafer and anneal wafer
09/30/2004US20040192040 Method of fabricating two-dimensional ferroelectric nonlinear crystals with periodically inverted domains
09/30/2004US20040188804 Obverse/reverse discriminative rectangular nitride semiconductor wafer
09/30/2004US20040187766 Method of fabricating monocrystalline crystals
09/29/2004EP1463115A2 Rectangular Nitride Compound Semiconductor Wafer with Obverse/Reverse Discriminative Marks
09/29/2004EP1463093A2 Thermal treatment system for semiconductors
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