| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
|---|
| 05/31/2000 | CN1255169A Low defect density, ideal oxygen precipitating silicon |
| 05/24/2000 | EP0914501B1 Forging cylindrical ingots of alkali halides |
| 05/16/2000 | US6063684 Method for eliminating residual oxygen contaminations from crucible-drawn silicon wafers |
| 05/16/2000 | US6063301 Crystal display processing method and crystal wafer manufacturing method |
| 05/09/2000 | US6059879 Method of forming semiconductor wafers, methods of treating semiconductor wafers to alleviate slip generation, ingots of semiconductive material, and wafers of semiconductive material |
| 05/09/2000 | US6059877 Method for obtaining a wafer in semiconducting material of large dimensions and use of the resulting wafer for producing substrates of the semiconductor on insulator type |
| 05/02/2000 | US6056931 Silicon wafer for hydrogen heat treatment and method for manufacturing the same |
| 05/02/2000 | US6056869 Electrolytic deplating of metal from side edges and backside of semiconductors |
| 05/02/2000 | US6056817 Heat treatment |
| 04/20/2000 | WO2000022198A1 Thermally annealed, low defect density single crystal silicon |
| 04/20/2000 | WO2000022196A1 Process for preparing defect free silicon crystals which allows for variability in process conditions |
| 04/19/2000 | EP0993370A1 Eutectic bonding of single crystal components |
| 04/18/2000 | US6051062 Producing an optical single crystal epitaxial film from a melt containing a transition metal on a single crystal substrate by a liquid phase epitaxial method |
| 04/12/2000 | EP0993025A2 Closed type semiconductor wet thermal oxidation apparatus |
| 04/12/2000 | EP0898800A4 ROOM TEMPERATURE STABLE COLOR CENTER LASER, LiF:F 2??+ ** MATERIAL, AND METHOD OF LASING |
| 04/06/2000 | WO2000018990A1 Method for removing defects of single crystal material and single crystal material from which defects are removed by the method |
| 04/05/2000 | CN1249533A Epitaxial wafer, its mfg method and method for surficial cleaning of compound semiconductor substrate |
| 04/05/2000 | CN1249532A Cleaner for large crystal wafer |
| 03/30/2000 | WO2000000674A9 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 03/29/2000 | EP0989600A2 Surface cleaning method for manufacturing II-VI compound semiconductor epitaxial wafers |
| 03/28/2000 | US6043156 Method of making semiconductor wafers |
| 03/25/2000 | CA2283532A1 An epitaxial wafer, a manufacturing method of the epitaxial wafer, and a surface cleaning method for a compound semiconductor substrate used in the epitaxial wafer |
| 03/23/2000 | WO2000016478A1 Surface acoustic wave device |
| 03/23/2000 | WO2000015882A2 Method for switching the properties of perovskite materials |
| 03/21/2000 | US6040070 Perovskite type ABO3 with surface layer |
| 03/09/2000 | WO2000012979A1 Sensitive element for an ultraviolet radiation detector and method for making the same |
| 03/09/2000 | WO2000012786A1 Method for producing silicon single crystal wafer and silicon single crystal wafer |
| 03/09/2000 | DE19839023A1 Protected epitaxially coated semiconductor wafers are produced using a central clean room chamber for integration of epitaxial layer and protective layer forming operations |
| 02/29/2000 | US6030887 Flattening process for epitaxial semiconductor wafers |
| 02/24/2000 | WO2000010040A1 Composite photonic crystals |
| 02/24/2000 | CA2340081A1 Composite photonic crystals |
| 02/15/2000 | US6025060 Method and apparatus for composite gemstones |
| 02/15/2000 | US6024306 Device and method for fragmenting semiconductor material |
| 02/10/2000 | WO2000007231A1 Pattern formation method using light-induced suppression of etching |
| 02/09/2000 | CN2362871Y Heat treatment apparatus for releasing silicon chip surface residual stress after working |
| 02/02/2000 | EP0975828A1 Etching method |
| 01/26/2000 | EP0973964A1 Low defect density, self-interstitial dominated silicon |
| 01/26/2000 | EP0973963A1 Low defect density silicon |
| 01/26/2000 | EP0973962A1 Low defect density, ideal oxygen precipitating silicon |
| 01/26/2000 | CN1242440A Method for heat treatment of monomorph of fluoride, and method for mfg. same |
| 01/19/2000 | EP0972863A1 Method for annealing single crystal fluoride and method for manufacturing the same |
| 01/19/2000 | EP0972097A1 MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga 1-x-y?Al x?In y?N |
| 01/19/2000 | EP0972094A1 Low defect density, vacancy dominated silicon |
| 01/12/2000 | EP0971055A2 "Method for heat treatment of silicon substrate, substrate treated by the method, and epitaxial wafer utilizing the substrate |
| 01/12/2000 | EP0971053A1 Method for producing silicon single crystal wafer for particle monitoring and silicon single crystal wafer for particle monitoring |
| 01/11/2000 | US6013191 Bombarding the surface of the film with ions from oxygen plasma and fluorinated gas mixture at first power density to form reaction sites; reacting film's surface with the ions at second lower power density to smooth surface of diamond film |
| 01/11/2000 | US6012303 Eutectic bonding of single crystal components |
| 01/06/2000 | WO2000000674A2 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 01/05/2000 | CN1240302A Method for producing semiconductor film and the method for producing solar energy cell using said film |
| 01/04/2000 | US6010797 Semiconductor substrates with cavities |
| 12/29/1999 | WO1999067171A1 A method of altering the colour of a material |
| 12/29/1999 | EP0967304A1 Method for manufacturing single crystal of silicon carbide |
| 12/29/1999 | CN1047871C Furnace for manufacturing semiconductor device and method of forming gate oxide film utilizing the same |
| 12/28/1999 | US6007916 For drawing copper wire for winding, steel cord, stainless steel wire, welding wire |
| 12/23/1999 | WO1999066351A1 Method of organic film deposition |
| 12/23/1999 | WO1999066089A1 Ni-BASED SINGLE CRYSTAL ALLOY HAVING COATING FILM FOR PREVENTING RECRYSTALLIZATION FRACTURE |
| 12/23/1999 | DE19827202A1 Rapid and reliable nondestructive detection and characterization of crystal defects in single crystal semiconductor material, e.g. silicon rods or wafers |
| 12/23/1999 | CA2301092A1 Ni-based single crystal alloy having coating film for preventing recrystallization fracture |
| 12/22/1999 | EP0965664A1 Method of producing semiconductor thin film and method of producing solar cell using same |
| 12/22/1999 | EP0964943A1 METHOD FOR GROWING MONOCRYSTALS OF HIGH-TEMPERATURE SUPRACONDUCTORS MADE OF RARE EARTH-CUPRATES OF FORM SE 1+x?Ba 2-x?Cu 3?O 7-$g(d)? |
| 12/22/1999 | CN1239519A Single crystal sic and process for preparing same |
| 12/21/1999 | US6004405 Wafers with crystal orientation |
| 12/15/1999 | EP0964084A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 12/14/1999 | US6001744 Etching semiconductor crystal with aqueous solution of sulfuric acid, saturated with potassium dichromate to obtain mirror surface for epitaxial growth |
| 12/12/1999 | CA2240507A1 Method for post-poling mobile ion redistribution in lithium niobate |
| 12/09/1999 | DE19825051A1 Verfahren und Vorrichtung zur Herstellung eines zylinderförmigen Einkristalls und Verfahren zum Abtrennen von Halbleiterscheiben Method and apparatus for producing a cylindrical single crystal and method for separating semiconductor wafers |
| 12/09/1999 | DE19825050A1 Process for orientating a cylindrical semiconductor single crystal |
| 12/08/1999 | EP0962557A1 Silicon single crystal wafer and method for producing silicon single crystal wafer |
| 12/08/1999 | EP0962284A1 Method and apparatus for manufacturing a cylindrical single crystal and method for slicing wafers |
| 12/07/1999 | US5997757 Method of forming connection hole |
| 12/07/1999 | US5997641 Seed-crystal holder for single-crystal pulling devices with magnetic field applied thereto |
| 12/01/1999 | EP0960961A1 Method of making a quartz crystal having a particular resonant frequency |
| 12/01/1999 | EP0960436A1 Method of preparing silicon carbide wafers for epitaxial growth |
| 11/30/1999 | US5993597 Single-crystal or polycrystalline silicon, which has an electric resistance of 0.0001-40 omega cm, whose crystal faces are (100), which is doped with boron or phosphorus, whose surface has been acid etched & vacuum heat treated |
| 11/30/1999 | US5993292 Production of notchless wafer |
| 11/24/1999 | CN1236481A Forming a crystalline semiconductor film on a glass substrate |
| 11/23/1999 | US5989511 Smooth diamond films as low friction, long wear surfaces |
| 11/23/1999 | CA2177345C Method for the growth of industrial crystals |
| 11/16/1999 | US5987088 High temperature and high pressure treatment of nuclear reactor cores |
| 11/16/1999 | US5986798 Method and arrangement for poling of optical crystals |
| 11/16/1999 | US5985678 Method of evaluating and thermally processing semiconductor wafer |
| 11/09/1999 | US5982797 Room temperature stable color center laser, LiF:F2+ ** material, method of lasing |
| 11/09/1999 | US5981443 A bicrystal substrate is formed by joining end faces of a first single crystal substrate and a second single crystal substrate, the end faces having different crystal orientation |
| 11/09/1999 | US5981392 Method of manufacturing semiconductor monocrystalline mirror-surface wafers which includes a gas phase etching process, and semiconductor monocrystalline mirror-surface wafers manufactured by the method |
| 11/03/1999 | EP0954018A1 Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device |
| 11/02/1999 | US5975997 Method of double-side lapping a wafer and an apparatus therefor |
| 10/26/1999 | US5972724 Process for reducing the surface recombination speed in silicon |
| 10/19/1999 | US5970381 Method for fabricating organic thin film |
| 10/19/1999 | US5968593 Semiconductors with heaters, chemical tube reactors, feeding |
| 10/19/1999 | US5968266 Apparatus for manufacturing single crystal of silicon |
| 10/12/1999 | US5966625 Method for making a slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure |
| 10/07/1999 | WO1999045180A3 Abo3 perovskite with a step |
| 10/06/1999 | EP0947466A1 Process for producing carbon nanotubes, process for producing carbon nanotube film, and structure provided with carbon nanotube film |
| 10/06/1999 | EP0946974A1 Forming a crystalline semiconductor film on a glass substrate |
| 10/06/1999 | EP0871803B1 PEROVSKITE WITH AO*(ABO3)n LAYER |
| 10/06/1999 | CN1231003A Single crystal SiC and process for preparing the same |
| 10/06/1999 | CN1230767A Method for manufacturing discrete substrate |
| 10/05/1999 | US5963821 Method of making semiconductor wafers |
| 10/05/1999 | US5962915 Single crystal wafers and a method of preparation thereof |
| 10/05/1999 | US5961713 Method for manufacturing a wafer having a microdefect-free layer of a precisely predetermined depth |