| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 07/12/1994 | US5328360 Heat-treating apparatus |
| 06/29/1994 | EP0603849A2 Method for producing a semiconducteur substrate by using a bonding process, and semiconductor stubstrate produced by the same |
| 06/29/1994 | EP0603391A1 Vertical heat treatment apparatus and heat insulating material |
| 06/15/1994 | CN1025044C Process of toughing diamond particle surface |
| 06/14/1994 | US5320982 Wafer cooling method and apparatus |
| 06/08/1994 | EP0600276A2 Process for production of a laterally limited monocrystal area by selective epitaxy and its application for production of a bipolar transistor as well as well as a MOS-transistor |
| 06/01/1994 | EP0599516A2 Process for removing surface contaminants from III-V semiconductors |
| 05/31/1994 | US5317186 Ring crystallization of wafers to prevent thermal shock |
| 05/24/1994 | US5314846 Method for processing a semiconductor wafer |
| 05/11/1994 | DE4237576A1 Prodn. of textured layer of metal oxide superconductor - by applying barrier layer to substrate and depositing superconducting material to barrier layer |
| 05/03/1994 | US5309543 Method of making infrared crystalline fiber and product |
| 05/03/1994 | US5308801 Process for the increase in critical temperature of high Tc superconductors |
| 04/26/1994 | US5306699 A chemical reactor having apertures for venting the volatile materials |
| 04/26/1994 | CA1328784C Article having surface layer of uniformly oriented, crystalline, organic microstructures |
| 04/13/1994 | CN1024220C Process for producing optical waveguide and product therefrom |
| 04/06/1994 | EP0590871A1 Thinning a diamond body by means of molten rare-earth-containing alloys |
| 03/31/1994 | WO1993020265A3 Process for reducing the damage susceptibility of optical quality crystals |
| 03/30/1994 | EP0589199A1 Etching of CaF2 |
| 03/30/1994 | EP0423327B1 Apparatus and method for treating flat substrates under reduced pressure |
| 03/29/1994 | US5298106 Method of doping single crystal diamond for electronic devices |
| 03/23/1994 | EP0588376A1 Monocrystal ingot attitude-adjusting device |
| 03/23/1994 | EP0588055A2 Method for manufacturing wafer |
| 03/22/1994 | US5296412 Method of heat treating semiconductor wafers by varying the pressure and temperature |
| 03/17/1994 | WO1993020266A3 Process for reducing damage susceptibility in optical-quality crystals |
| 03/17/1994 | DE4242565C1 Verfahren zur Justage von Halbleiterscheiben zueinander Method for the adjustment of semiconductor wafers to each other |
| 03/16/1994 | CN1083874A Heat treating method of straightly pulled monocrystalline silicon in nitrogen-containing atmosphere |
| 03/01/1994 | US5291205 Radio frequency automatic identification system |
| 02/22/1994 | CA1327126C Process for treating diamond grains |
| 02/16/1994 | EP0341267B1 Process for producing an optical waveguide and the product therefrom |
| 02/16/1994 | CN1023822C Process for polassium iodate crystal |
| 02/15/1994 | US5285597 Method and arrangement for subdividing semiconductor bars into semiconductor wafers |
| 02/03/1994 | WO1993021364A3 Epitaxially strengthened single crystal aluminum garnet reinforcement fibers |
| 02/03/1994 | WO1993014250A3 Process for surface treatment with ions |
| 02/03/1994 | DE4225171A1 Mfg. semiconductor element with differently doped layers - by wafer silicon@ bonding and wafer thinning |
| 02/02/1994 | EP0581438A2 Etching a diamond body with a molten or partially molten metal |
| 02/02/1994 | CN1023654C Lithium niobate crystal (LN) room-temp. corrosive and its application |
| 02/01/1994 | US5282926 Method of anisotropically etching monocrystalline, disk-shaped wafers |
| 01/26/1994 | EP0580162A1 Wafer with defined grinded warp and process for manufacturing |
| 01/20/1994 | DE4323964A1 Treating semiconductor substrate in gas atmos. - to suppress formation of bulk micro defects |
| 01/20/1994 | DE4223215A1 Processing silicon@ wafer having deformable micro mechanical structure - comprising adhering foil to lower side of wafer and removing foil after processing |
| 01/18/1994 | US5279992 Method of producing a wafer having a curved notch |
| 01/18/1994 | US5279077 Method for producing semiconductor wafer |
| 01/11/1994 | US5277366 High temperature annealing; cutters; durability, hardness |
| 01/05/1994 | CN2151987Y Crystal annealing device |
| 01/04/1994 | US5275687 Process for removing surface contaminants from III-V semiconductors |
| 12/28/1993 | US5273616 Method of producing sheets of crystalline material and devices made therefrom |
| 12/28/1993 | US5273424 Vertical heat treatment apparatus |
| 12/28/1993 | US5273423 Heat treatment apparatus |
| 12/23/1993 | WO1993021365A3 Method for making a discontinuity lattice at the surface of a crystalline substrate |
| 12/21/1993 | US5271796 Method and apparatus for detecting defect on semiconductor substrate surface |
| 12/21/1993 | US5271732 Heat-treating apparatus |
| 12/15/1993 | EP0573943A1 Method for the manufacture of large single crystals |
| 12/08/1993 | EP0573312A2 Diamond doping |
| 11/30/1993 | US5266236 Thermally stable dense electrically conductive diamond compacts |
| 11/25/1993 | WO1993023713A1 Vertical heat treatment apparatus and heat insulating material |
| 11/18/1993 | EP0570100A2 Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal |
| 11/16/1993 | US5262021 Doping a silicon wafer, etching with fluoride to produce holes |
| 11/16/1993 | US5261935 Clean air apparatus |
| 11/11/1993 | DE4314152A1 Appts. to eliminate tendency of wafer substrates to swing in semiconductor processing - comprising elastically deformable ring with its inner periphery lying next to source |
| 11/10/1993 | EP0568696A1 PRODUCTION OF CLEAN, WELL-ORDERED CdTe SURFACES USING LASER ABLATION. |
| 11/09/1993 | US5260251 Sputtering an oxide film on a dielectric substrate from the target compounds and heating in oxygen atmosphere in deposited film in presence of thalium and lead oxide source |
| 11/09/1993 | US5259917 Exposing semiconductor crystal to high energy ionizing radiation to produce within crystal energetic photo electrons yielding defect donors to cancel acceptors in crystal |
| 11/09/1993 | US5259900 Reflux annealing device and method |
| 11/09/1993 | US5259883 Method of thermally processing semiconductor wafers and an apparatus therefor |
| 11/04/1993 | DE4234196A1 Synthetic prodn. of diamond and borazon - by polymerising graphite or hexagonal boron nitride crystals in electromagnetic field at room temp. and atmos. pressure using Lewis acid as initiator |
| 11/02/1993 | US5257926 Fast, safe, pyrogenic external torch assembly |
| 10/28/1993 | WO1993021365A2 Method for making a discontinuity lattice at the surface of a crystalline substrate |
| 10/28/1993 | WO1993021364A2 Epitaxially strengthened single crystal aluminum garnet reinforcement fibers |
| 10/27/1993 | EP0567129A2 Method of working diamond |
| 10/19/1993 | US5254507 Semi-insulating InP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same |
| 10/19/1993 | US5254209 Method of making micromechanical components |
| 10/14/1993 | WO1993020266A2 Process for reducing damage susceptibility in optical-quality crystals |
| 10/14/1993 | WO1993020265A2 Process for reducing the damage susceptibility of optical quality crystals |
| 10/12/1993 | US5252173 Process for growing semiconductor layer on substrate |
| 10/12/1993 | CA1322936C Process for producing an optical waveguide and the product therefrom |
| 10/05/1993 | US5250147 Epitaxial growth; depositing second component in from to produce precipitate or inclusions in first component; heat treatment to redist ribute and coalesce |
| 10/05/1993 | CA2024134C Hydrogen plasma passivation of gaas |
| 09/30/1993 | DE4209865A1 Removal of metal residues from semiconductor surfaces - using aq. cleaning compsn. treated with carbon di:oxide and/or oxalic acid |
| 09/29/1993 | EP0562273A2 Method for improving the interface characteristics of CaF2 on silicon |
| 09/29/1993 | CN1076736A Annealing technology of chromium-doped zinc tungstate monocrystal |
| 09/21/1993 | US5245790 Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers |
| 09/15/1993 | EP0559986A2 Method for producing semiconductor wafer and substrate used for producing the semiconductor |
| 09/15/1993 | CN1076227A Polarization process and device for doped lithium columbate crystal |
| 09/14/1993 | US5245187 Microtip, process for preparation thereof, surface-observing apparatus and information-treating apparatus employing the same |
| 09/08/1993 | EP0558925A1 Method for controlling roughness on surface of monocrystal |
| 09/07/1993 | US5243620 High power reflectors for laser technology |
| 09/07/1993 | US5242896 Metal oxides, heat treatment to transform crystal structure |
| 09/02/1993 | DE4206173A1 Prodn. of micro-mechanical components - by chemically pretreating silicon@ wafers, placing on each other, and heating |
| 09/01/1993 | EP0557415A1 Process for achieving controlled precipitation profiles in silicon wafers |
| 08/24/1993 | CA1321530C Diamond laser crystal and method of manufacturing the same |
| 08/19/1993 | WO1993016213A1 Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ions |
| 08/17/1993 | US5236181 Vertical heat treating apparatus |
| 08/10/1993 | US5234501 Oxidation metod |
| 08/10/1993 | CA1321122C Processes for enchancing fluorescence of ti:a1_0_ tunable laser crystals |
| 08/05/1993 | WO1993015243A1 Process for producing rigid bonds between monocrystalline bodies |
| 08/04/1993 | EP0553852A2 Process for producing semiconductor substrate |
| 08/04/1993 | EP0553465A1 Process for the manufacture of a perforated work article |
| 08/03/1993 | CA1320897C Method and apparatus for making inorganic webs and structures formed thereof |
| 07/29/1993 | DE4302067A1 Chemical-mechanical planarising - by turning semiconductor wafer, planarising, and polishing wafer |
| 07/27/1993 | US5230747 Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer |