| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
|---|
| 08/01/2002 | US20020102428 Fabrication of periodic surface structures with nanometer-scale spacings |
| 08/01/2002 | US20020100410 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| 07/24/2002 | EP1224695A2 Method for thermally treating semiconductor substrates |
| 07/23/2002 | US6423649 Method and apparatus for stabilizing high pressure oxidation of a semiconductor device |
| 07/23/2002 | US6423615 Silicon wafers for CMOS and other integrated circuits |
| 07/23/2002 | CA2263339C Single crystal sic and process for preparing the same |
| 07/18/2002 | US20020092465 Binary and ternary crystal purification and growth method and apparatus |
| 07/18/2002 | US20020092460 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 07/17/2002 | EP1222325A1 Method for producing czochralski silicon free of agglomerated self-interstitial defects |
| 07/17/2002 | EP1222324A1 Czochralski process for growing single crystal silicon by controlling the cooling rate |
| 07/11/2002 | WO2002053490A2 Method of making optical fluoride laser crystal components |
| 07/11/2002 | US20020090818 Apparatus and method for surface finishing a silicon film |
| 07/11/2002 | US20020088966 Process for oxidizing iron-doped lithium niobate |
| 07/09/2002 | US6416836 Thermally annealed, low defect density single crystal silicon |
| 07/09/2002 | CA2041319C Controlled thallous oxide evaporation for thallium superconductor films and reactor design |
| 07/04/2002 | US20020083889 Thermal annealing process for producing low defect density single crystal silicon |
| 07/04/2002 | DE10063600A1 Process for etching a wafer using an aqueous solution of sulfuric acid and hydrogen peroxide comprises removing a sample from a wafer processing tank, and comparing the concentration of hydrogen fluoride in the solution in the sample |
| 07/03/2002 | EP0973962B1 Low defect density, ideal oxygen precipitating silicon |
| 07/03/2002 | CN1087040C Rare-earth compound pulp and surface sculpture method for diamond thick-film |
| 07/02/2002 | US6414277 Ultra-high-temperature heat treatment apparatus |
| 07/02/2002 | US6413310 Czochralski method; slicing; heat treating; reduced grown-in defects; low haze and microroughness; semiconductor integrated circuits |
| 06/27/2002 | US20020081440 Characterized in that laser scattering tomography defect occurrence region accounts for 80% of wafer surface area, that laser scattering tomography defects have mean size of 0.1 mu m; semiconductor, low surface defect density |
| 06/27/2002 | US20020078880 Vacancy, dominsated, defect-free silicon |
| 06/26/2002 | EP1217104A2 Method of manufacturing semiconductor wafers |
| 06/26/2002 | EP1216316A1 Polishing of fluoride crystal optical lenses and preforms using cerium oxide for microlithography |
| 06/26/2002 | CN1355333A Method for growing titanium gem crystal |
| 06/25/2002 | US6409827 Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface |
| 06/25/2002 | US6409826 Low defect density, self-interstitial dominated silicon |
| 06/25/2002 | US6408536 Process for drying protein crystals |
| 06/20/2002 | WO2002006568A3 Slicing of single-crystal films using ion implantation |
| 06/20/2002 | US20020073918 Particle beam biaxial orientation of a substrate for epitaxial crystal growth |
| 06/19/2002 | EP0973963B1 Low defect density silicon |
| 06/19/2002 | CN1354287A Open pipe tellurium cadmium mercury epitaxial material heat treatment method |
| 06/18/2002 | US6407367 Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article |
| 06/18/2002 | US6407008 Method of forming an oxide layer |
| 06/18/2002 | US6406983 Vapor deposition |
| 06/18/2002 | US6406589 Plasma etching in vacuum chamber using sulfur hexafluoride |
| 06/18/2002 | US6405435 Process for producing or repairing cooling channels in monocrystalline components of gas turbines |
| 06/13/2002 | WO2002047142A1 Method and apparatus for treating article to be treated |
| 06/13/2002 | US20020072253 Method of removing an amorphous oxide from a monocrystalline surface |
| 06/13/2002 | US20020070427 Silicon wafer |
| 06/13/2002 | US20020070426 Telescoped multiwall nanotube and manufacture thereof |
| 06/13/2002 | DE10031603C2 Verfahren zur Herstellung mindestens einer Halbleiterscheibe durch Ätzen A process for producing at least one semiconductor wafer by etching, |
| 06/11/2002 | US6403982 Semi-insulating silicon carbide without vanadium domination |
| 06/06/2002 | WO2002023594A3 Apparatus and method for reducing contamination on thermally processed semiconductor substrates |
| 06/06/2002 | US20020068374 The GaN compound semiconductor layer to which the P type impurity is doped is irradiated with electromagnetic radiation of a predetermined wavelength to selectively agitate hydrogen bonds to dissociate H, and activate impurity |
| 06/06/2002 | US20020068201 Providing expitaxially compatible sacrificial template, depositing single crystal aluminum, gallium indium nitride material on template to form composite sacrificial template/nitride article, parting |
| 06/05/2002 | EP1211337A2 Method of making diamond product and diamond product |
| 06/04/2002 | US6399500 Uniformity; removal defects |
| 06/04/2002 | US6399011 Method of biaxially aligning crystalline material |
| 05/30/2002 | WO2001098563A3 Orientation independent oxidation of silicon |
| 05/30/2002 | US20020064496 Method of making diamond product and diamond product |
| 05/30/2002 | US20020063119 Heat treatment apparatus and method |
| 05/29/2002 | EP1209259A2 Low defect density, self-interstitial dominated silicon |
| 05/29/2002 | EP1209258A2 Low defect density silicon |
| 05/29/2002 | CN1351680A Semi-insulating silicon carbide without vandium dumination |
| 05/28/2002 | US6396080 Single crystals containing dopes |
| 05/28/2002 | US6395610 Method of making bipolar transistor semiconductor device including graded, grown, high quality oxide layer |
| 05/23/2002 | WO2002040753A1 Method and device for enhancing the colour of minerals with electron beam |
| 05/23/2002 | WO2001091922A8 Process for production of ultrathin protective overcoats |
| 05/23/2002 | US20020059900 In-situ post epitaxial treatment process |
| 05/21/2002 | US6391662 Evaluating the quality of single crystal silicon; b-type defect delineating etch after heat treatment |
| 05/21/2002 | CA2109962C Process for making superconducting t1-pb-sr-ca-cu oxide films and devices |
| 05/16/2002 | WO2002039496A1 Method for manufacturing annealed wafer and annealed wafer |
| 05/16/2002 | WO2001050161A9 CALCIUM FLUORIDE (CaF2) STRESS PLATE AND METHOD OF MAKING THE SAME |
| 05/16/2002 | DE10054038A1 Device used in production of electronic components comprises plate-like bodies, one having upper side with pattern made from recesses |
| 05/16/2002 | DE10052411A1 Process for heat treating a silicon wafer used in the production of semiconductor circuits comprises forming a silicon wafer having a specified oxygen concentration |
| 05/15/2002 | EP1204788A1 Crystal growth and annealing method and apparatus |
| 05/14/2002 | US6387827 Thermal oxidation |
| 05/14/2002 | US6387177 Method for manufacturing a segmented crystal |
| 05/10/2002 | WO2001086038A3 Photonic bandgap materials based on germanium |
| 05/09/2002 | US20020055022 Method for enhancing the solubility of boron and indium in silicon |
| 05/09/2002 | US20020053522 Shaping electrode removes material under a potential difference to controllably shape to a desired contour |
| 05/09/2002 | US20020053318 Slicing of single-crystal films using ion implantation |
| 05/08/2002 | DE10052154A1 Verfahren und Vorrichtung zum Trennen von Einkristallen, Justiervorrichtung und Testverfahren zum Ermitteln einer Orientierung eines Einkristalls für ein derartiges Verfahren Method and apparatus for separating crystals, adjusting and testing method for determining an orientation of a single crystal for such a method |
| 05/02/2002 | WO2002034973A1 Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation |
| 05/02/2002 | WO2002008120A3 Telescoped multiwall nanotube and manufacture thereof |
| 05/02/2002 | US20020051731 Silicon wafer storage water and silicon wafer storage method |
| 05/02/2002 | US20020050624 Mechanical resistance of a single-crystal silicon wafer |
| 05/02/2002 | EP1200648A1 Method for producing segmented crystals |
| 05/02/2002 | DE10047345A1 Silicon wafer used in the production of semiconductor circuits has a low number of particles of crystalline origin in the wafer surface |
| 04/30/2002 | US6379642 Vacancy dominated, defect-free silicon |
| 04/23/2002 | US6376387 Method of sealing an epitaxial silicon layer on a substrate |
| 04/23/2002 | US6376276 Method of preparing diamond semiconductor |
| 04/23/2002 | US6376031 Surface treating with cobalt or cobalt oxide |
| 04/23/2002 | US6375551 Angstrom polishing of calcium fluoride optical VUV microlithography lens elements and preforms |
| 04/18/2002 | WO2002031893A1 Epitaxial oxide films via nitride conversion |
| 04/18/2002 | WO2002001608A3 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 04/18/2002 | CA2425757A1 Epitaxial oxide films via nitride conversion |
| 04/17/2002 | EP1197992A1 Semiconductor wafer and production method therefor |
| 04/17/2002 | CN1345081A Treatment system of semiconductor and method of controlling humidity |
| 04/11/2002 | WO2001091922A3 Process for production of ultrathin protective overcoats |
| 04/10/2002 | EP1195450A2 Semiconductor processing system and method for controlling moisture level therein |
| 04/10/2002 | EP1194619A1 Doped diamond |
| 04/10/2002 | CN1344273A Method for drying protein crystals |
| 04/04/2002 | WO2002027778A1 Method of heat-treating silicon wafer |
| 04/04/2002 | WO2002027080A1 A technique for the desired crystalline phase formation for the manufacture of integrated circuits |
| 04/04/2002 | WO2002026660A1 Method for joining |
| 04/04/2002 | US20020038625 Manufacturing method for calcium fluoride and calcium fluoride for photolithography |
| 04/03/2002 | EP1192647A1 Oxidation of silicon on germanium |