| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 01/07/1999 | WO1999000538A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 01/05/1999 | US5855668 Superconductor substrates |
| 12/30/1998 | WO1998059099A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 12/30/1998 | EP0887105A1 Device and method for comminution of semiconductive material |
| 12/22/1998 | US5852622 Solid state lasers with composite crystal or glass components |
| 12/22/1998 | US5851303 Method for removing metal surface contaminants from silicon |
| 12/22/1998 | US5851283 Method and apparatus for production of single crystal |
| 12/22/1998 | CA2097472C Method for the manufacture of large single crystals |
| 12/17/1998 | WO1998056966A1 Corner cube arrays and manufacture thereof |
| 12/17/1998 | WO1998056575A1 Eutectic bonding of single crystal components |
| 12/15/1998 | US5849669 High temperature superconducting Josephson device and method for manufacturing the same |
| 12/15/1998 | US5849093 Process for surface treatment with ions |
| 12/15/1998 | US5849079 Diamond film growth argon-carbon plasmas |
| 12/09/1998 | EP0605650B1 Radio frequency automatic identification system |
| 12/08/1998 | US5846638 Composite optical and electro-optical devices |
| 12/02/1998 | CN1041003C Method for producing large polycrystalline plates from optical and scintillation material |
| 12/01/1998 | US5843226 Etch process for single crystal silicon |
| 11/26/1998 | WO1998053125A1 Single crystal silicon carbide and process for preparing the same |
| 11/25/1998 | CN2298265Y 快速退火装置 Rapid annealing device |
| 11/24/1998 | US5840117 Method for surface flattening a crystal substrate |
| 11/24/1998 | US5839424 Process for the orientation of several single crystals disposed side by side on a cutting support for their simultaneous cutting in a cutting machine and device for practicing this process |
| 11/17/1998 | US5838716 Leak check procedure for a dry oxidation furnace tube |
| 11/10/1998 | US5834374 Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates |
| 11/10/1998 | US5834322 Heat treatment of Si single crystal |
| 11/05/1998 | WO1998048944A1 Method for enhancing the color of minerals useful as gemstones |
| 10/28/1998 | CN1197212A Method of analyzing semiconductor ingot |
| 10/27/1998 | US5827779 Method of manufacturing semiconductor mirror wafers |
| 10/22/1998 | WO1998046813A1 Etching method |
| 10/15/1998 | WO1998045511A1 MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN |
| 10/15/1998 | WO1998045510A1 Low defect density, self-interstitial dominated silicon |
| 10/15/1998 | WO1998045509A1 Low defect density silicon |
| 10/15/1998 | WO1998045508A1 Low defect density, vacancy dominated silicon |
| 10/15/1998 | WO1998045507A1 Low defect density, ideal oxygen precipitating silicon |
| 10/14/1998 | EP0871042A1 Radio frequency automatic identification system |
| 10/13/1998 | US5820688 Method for the treatment of semiconductor material |
| 10/08/1998 | WO1998044549A1 Flattening process for epitaxial semiconductor wafers |
| 10/07/1998 | CN1195038A High-temperature heat treatment method for mercury cadmium telluride material |
| 10/06/1998 | US5817174 Semiconductor substrate and method of treating semiconductor substrate |
| 10/06/1998 | US5817171 Apparatus and method for producing single crystal using Czochralski technique |
| 10/01/1998 | WO1998042620A1 Process for producing carbon nanotubes, process for producing carbon nanotube film, and structure provided with carbon nanotube film |
| 09/30/1998 | EP0867539A2 Method for poling a ferroelectric crystal |
| 09/30/1998 | CN1194623A Silicon carbide gemstones |
| 09/29/1998 | US5814194 Forming clusters, acceleration and radiation |
| 09/24/1998 | DE19711550A1 Edge zone-free polycrystalline silicon article production |
| 09/22/1998 | US5810936 Plasma-inert cover and plasma cleaning process and apparatus employing same |
| 09/22/1998 | US5810929 Pyrogenic wet thermal oxidation of semiconductor wafers |
| 09/17/1998 | DE19810546A1 Notch-free marked wafer production |
| 09/17/1998 | DE19810545A1 Wafer with mirror polished bevelled edge |
| 09/11/1998 | WO1998039502A1 METHOD FOR GROWING MONOCRYSTALS OF HIGH-TEMPERATURE SUPRACONDUCTORS MADE OF RARE EARTH-CUPRATES OF FORM SE1+xBa2-xCu3O¿7-δ? |
| 09/09/1998 | EP0863231A1 A process for dicing a preform made of an oxide single crystal, and a process for producing functional devices |
| 09/09/1998 | EP0863117A2 A process for forming a microstructure in a substrate of a ferroelectric single crystal |
| 09/08/1998 | US5804321 Long term support in high temperature homoepitaxial growth; metal carbides; alloys of platinum family metals contacting and bound on side of substrate. |
| 09/08/1998 | US5803967 Repeatedly cycling between first and second growth parameters; etching at intermediate stages to remove defects |
| 09/03/1998 | DE19708711C1 Verfahren zur Züchtung von Einkristallen von Hochtemperatursupraleitern aus Seltenerd-Kupraten der Form SE¶1¶¶+¶¶x¶Ba¶2¶¶-¶¶x¶Cu¶3¶0¶7¶¶-¶¶delta¶ und nach dem Verfahren hergestellte Kristalle Method for growing single crystals of high-temperature superconductors from rare-earth cuprates the form SE¶1¶¶ + ¶¶x¶Ba¶2¶¶-¶¶x¶Cu¶3¶0¶7¶¶-¶¶delta¶ and after method produced crystals |
| 09/01/1998 | US5801069 Method of fabricating thin film piezoelectric device |
| 08/25/1998 | US5798075 Adjustment of mosaic spread for highly oriented pyrolytic graphite |
| 08/18/1998 | US5796762 Room temperature stable color center laserLiF:F2 +** material and method of lasing |
| 08/18/1998 | US5796079 Rapid thermal processing method for ferroelectric, high dielectric, electrostrictive, semiconductive, or conductive ceramic thin film using microwaves |
| 08/18/1998 | US5795653 Method for polishing a diamond or carbon nitride film by reaction with oxygen transported to the film through a superionic conductor in contact with the film |
| 08/11/1998 | US5792566 Single crystal wafers |
| 08/11/1998 | US5792253 Heating to below melting point of alkali halide, applying pressure to compress |
| 08/04/1998 | US5788763 High quality by controlling the oxygen deposits |
| 07/29/1998 | EP0349633B1 Polysilicon thin film process |
| 07/29/1998 | CN1188823A Thermal processor for semiconductor wafers |
| 07/22/1998 | EP0853690A2 Silicon carbide gemstones |
| 07/22/1998 | EP0853600A2 A method of biaxially aligning crystalline material |
| 07/14/1998 | US5779822 Having a carbide phase produced by aging heat treatment of single crystal austenitic phase; nuclear reactor cores; nuclear fusion reactors; stress corrosion cracking resistance; high strength; durability |
| 07/14/1998 | US5779791 Process for controlling thermal history of Czochralski-grown silicon |
| 07/07/1998 | US5777300 Reduced pressure wet oxidation system; burning hydrogen and oxygen gases to generate water vapor, pressure differential |
| 07/01/1998 | EP0851465A1 Method of separation of at least two elements joined by ion implantation |
| 07/01/1998 | EP0851043A1 Optical single crystal film, process for producing the same and optical element comprising the same |
| 06/30/1998 | US5772760 Method for the preparation of nanocrystalline diamond thin films |
| 06/25/1998 | WO1998027578A1 Very long and highly stable atomic wires, method for making these wires, application in nano-electronics |
| 06/25/1998 | WO1998027252A1 Method for preparing a gemstone for polishing |
| 06/23/1998 | US5769944 Vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying axial magnetic field |
| 06/17/1998 | EP0848088A1 A method for treating a suface of a silicon single crystal and a method for manufacturing a silicon single crystal thin film |
| 06/16/1998 | US5766976 Method for detecting crystal defects in a silicon single crystal substrate |
| 06/16/1998 | US5766340 Method for post-poling mobile ion redistribution in lithium niobate |
| 06/11/1998 | WO1998025299A1 Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device |
| 06/09/1998 | US5763288 Method for producing semiconductor substrate by wafer bonding |
| 06/09/1998 | US5762896 Single crystal gems hardness, refractive index, polishing and crystallization |
| 06/03/1998 | EP0845803A1 SiC ELEMENT AND PROCESS FOR ITS PRODUCTION |
| 05/28/1998 | WO1998022978A1 Method of preparing silicon carbide wafers for epitaxial growth |
| 05/19/1998 | US5753038 Method for the growth of industrial crystals |
| 05/19/1998 | US5752819 Exhaust system for high temperature furnace |
| 05/14/1998 | WO1998020524A1 Forming a crystalline semiconductor film on a glass substrate |
| 05/06/1998 | CN1180902A Adjustment of mosaic spread for HOPG material |
| 05/06/1998 | CN1180726A Sawing suspension and method for cutting wafers from crystal |
| 05/05/1998 | US5747364 Mirror chamfering or etching the periferal portions of the wafers after the non-wax polishing step |
| 05/05/1998 | US5746829 Window-containing sealed containers for concentrating impurities in semiconductors by radiating a specified position with a laser beam at an energy level below that of the energy of vaporization of the crystal |
| 04/22/1998 | EP0837115A1 Slicing slurry and method for cutting wafers from a crystal |
| 04/14/1998 | US5738942 Semiconductor silicon wafer and process for producing it |
| 04/09/1998 | DE19641070A1 Silicon wafer defects determining method for manufacture |
| 04/08/1998 | CN1178391A Heat treating apparatus for mercury self sealed mercury-cadmium tellurid for switching transistors |
| 04/07/1998 | US5736226 Wafer and method of producing a wafer |
| 04/07/1998 | US5735949 Vapor depositing a monocrystalline layer on substrate, separated by a dielectric amorphous layer |
| 04/01/1998 | EP0801606A4 Cleaning method |
| 03/19/1998 | DE19637220A1 Passivation of surface defects on diamond |
| 03/18/1998 | EP0829559A1 Method for producing silicon wafers with a low defect-density |
| 03/17/1998 | US5728214 Surface treatment of an oxide LNBA2CU307-X single crystal |