| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 07/24/2001 | US6264906 Method for heat treatment of silicon substrate, substrate treated by the method, and epitaxial wafer utilizing the substrate |
| 07/19/2001 | US20010008750 Method and apparatus for stabilizing high pressure oxidation of a semiconductor device |
| 07/19/2001 | US20010008656 Bulk single crystal gallium nitride and method of making same |
| 07/19/2001 | US20010008114 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 07/18/2001 | CN1304459A Process for preparing defect free silicon crystal which allows for variability in process conditions |
| 07/12/2001 | WO2001050161A1 CALCIUM FLUORIDE (CaF2) STRESS PLATE AND METHOD OF MAKING THE SAME |
| 07/12/2001 | DE10105654A1 Identifying rod-shaped semiconducting material on outer surface involves applying rod-specific characteristic to peripheral surface of rod or saw support surface over entire length of rod |
| 07/10/2001 | US6258754 Large, strongly linked superconducting monoliths and process for making the same |
| 07/10/2001 | US6258666 Method of producing semiconductor thin film and method of producing solar cell using same |
| 07/10/2001 | US6257224 Process for working a preform made of an oxide single crystal, and a process for producing functional devices |
| 07/05/2001 | WO2001048810A1 Inspecting device for crystal defect of silicon wafer and method for detecting crystal defect of the same |
| 07/05/2001 | US20010006039 A silicon wafer substrate is hydrogen-annealed to remove impurities and defects, then, an impurity buried layer is formed in an upper surface of silicon wafer substrate, which increases the number of contaminant attractor in upper surface |
| 07/03/2001 | US6255231 Method for forming a gate oxide layer |
| 07/03/2001 | US6254672 Low defect density self-interstitial dominated silicon |
| 06/28/2001 | WO2001046493A1 Polycrystalline diamond microstructures |
| 06/27/2001 | EP1110237A2 Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma output or adjusting the same upwards |
| 06/27/2001 | CN1300662A In-line cleaning method after polishing |
| 06/26/2001 | US6251835 Surface planarization of high temperature superconductors |
| 06/21/2001 | WO2000015882A9 Method for switching the properties of perovskite materials |
| 06/14/2001 | WO2001042540A1 Fabrication of periodic surface structures with nanometer-scale spacings |
| 06/14/2001 | US20010003268 Cooling controlled to allow for the diffusion of intrinsic point defects, such that agglomerated defects do not form in this axially symmetric region |
| 06/13/2001 | EP1105920A1 Pattern formation method using light-induced suppression of etching |
| 06/13/2001 | EP1105757A1 Composite photonic crystals |
| 06/13/2001 | DE19958077A1 Process for polishing both sides of semiconductor wafers comprises simultaneously polishing and treating the front side and the rear side of the wafers, transferring to an aqueous bath, and cleaning and drying |
| 06/12/2001 | US6246149 Using piezoelectric substrate (strontium, tantalum, gallium, and silicon mixed oxide) with high electromechanical coupling coefficient widens passband width, and low surface acoustic wave velocity makes the device smaller |
| 06/12/2001 | US6246030 Heat processing method and apparatus |
| 06/07/2001 | DE19954349A1 Semiconductor wafer production comprises abrasive friction cutting of semiconductor rods, in which cylindrical semiconductor rod is cut with elliptical basal plane |
| 06/06/2001 | CN1298039A Zinc oxide whisker coated with metal layer |
| 05/29/2001 | US6239044 Apparatus for forming silicon oxide film and method of forming silicon oxide film |
| 05/29/2001 | US6238482 Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer |
| 05/23/2001 | DE10053025A1 Verfahren und Vorrichtung für die gesteuerte Oxidation von Materialien Method and apparatus for the controlled oxidation of materials |
| 05/23/2001 | DE10048397A1 Process for restoring a quartz crucible comprises internally repairing the crucible using chemical etching, mechanically grinding or heat treatment at high temperature on the inner surface |
| 05/22/2001 | US6235543 Method of evaluating a semiconductor wafer |
| 05/17/2001 | WO2001035450A1 Compound semiconductor wafer |
| 05/17/2001 | DE19952015A1 Verfahren zum thermischen Behandeln von Objekten A method for the thermal treatment of objects |
| 05/17/2001 | DE10053834A1 Production of an aluminum nitride thin layer used in thin film technology comprises subjecting the thin layer to a microwave plasma after is has been deposited |
| 05/10/2001 | WO2001033260A1 Preconditioned crystals of lithium niobate and lithium tantalate and methods of preparing the same |
| 05/10/2001 | DE19952705A1 Production of a semiconductor wafer with an epitaxial layer comprises placing a wafer on a susceptor and mechanically removing from the susceptor after the epitaxial layer has been deposited |
| 05/09/2001 | EP1097107A1 A method of altering the colour of a material |
| 05/03/2001 | WO2001031698A2 Method for thermally treating semiconductor substrates |
| 05/03/2001 | WO2001031696A1 Composition for chemical purification of surfaces off adsorbed metal ions and atoms |
| 05/03/2001 | WO2001031659A2 THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF |
| 05/03/2001 | CA2389454A1 Thin film hg-based superconductors, thermoelectric materials and methods of fabrication thereof |
| 05/02/2001 | EP1060509A4 Crystal ion-slicing of single-crystal films |
| 05/02/2001 | CN1065291C Vacuum heat treatment process of mercury-cadimium-telluriurm molecular beam epitaxial material |
| 05/02/2001 | CN1065290C Hole conduction mercury cadimium-tellurium epitaxial material heat treatment process and device |
| 05/01/2001 | US6225190 Process for the separation of at least two elements of a structure in contact with one another by ion implantation |
| 05/01/2001 | US6224934 Measuring ultraviolet rays |
| 05/01/2001 | US6224666 Forging cylindrical alkali halide ingots into rectangular plates |
| 04/26/2001 | WO2001029593A1 Ion exchange waveguides and methods of fabrication |
| 04/26/2001 | WO2000059016A3 Method for producing thin, uniform oxide layers on silicon surfaces |
| 04/26/2001 | DE10012840A1 Production of semiconductor wafers comprises simultaneously polishing front and rear sides of each wafer between polishing plates covered with cloth, evaluating and then re-polishing |
| 04/26/2001 | CA2324689A1 Method and apparatus for the controlled oxidation of materials |
| 04/24/2001 | US6222194 Fast neutron irradiation of sapphire |
| 04/19/2001 | WO2001026886A1 Electromagnetic radiation absorbant crystals of lithium niobate and lithium tantalate and methods of preparing the same |
| 04/19/2001 | WO2000034999A9 An epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof |
| 04/17/2001 | US6218680 Semi-insulating silicon carbide without vanadium domination |
| 04/17/2001 | US6217842 Single crystal SIC and method of producing the same |
| 04/12/2001 | DE10048374A1 Process for the large surface direct bonding of wafers e.g. gallium arsenide wafers comprises carrying out final cleaning of wafers using molecular or atomic hydrogen and bringing cleaned surfaces of wafers in contact with each other |
| 04/11/2001 | EP1090166A1 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 04/11/2001 | CN1291349A Crystal ion-slicing of single crystal films |
| 04/10/2001 | US6214108 Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same |
| 04/10/2001 | US6214107 Method for manufacturing a SiC device |
| 04/04/2001 | EP1089329A1 Production methods of compound semiconductor single crystal and compound semiconductor element |
| 04/04/2001 | EP1088914A1 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate |
| 04/04/2001 | EP1088911A1 Continuous crystal plate growth process and apparatus |
| 04/04/2001 | CN1289865A Growth process for monocrystal of gadolinium nitride, substrates of gadolinium mitride monocrystal and manufacture thereof |
| 04/03/2001 | US6211999 Lithium tantalate single-crystal and photo-functional device |
| 03/29/2001 | WO2001021865A1 Method for producing czochralski silicon free of agglomerated self-interstitial defects |
| 03/29/2001 | WO2001021864A1 Process for detecting agglomerated intrinsic point defects by metal decoration |
| 03/29/2001 | WO2001021862A1 Coated diamond, method for preparing the same and composite material comprising the same |
| 03/29/2001 | WO2001021861A1 Czochralski process for growing single crystal silicon by controlling the cooling rate |
| 03/27/2001 | US6207282 Substrate surface treatment method |
| 03/21/2001 | EP1085562A2 Apparatus and method for surface finishing a silicon film |
| 03/20/2001 | US6204139 Method for switching the properties of perovskite materials used in thin film resistors |
| 03/20/2001 | US6203772 Heat treatment, crystallization, complexing; semiconductors |
| 03/20/2001 | US6203728 To decrease an absorption coefficient for a light in a blue light range; optics |
| 03/15/2001 | WO2001018852A1 Passivation of material using ultra-fast pulsed laser |
| 03/06/2001 | US6196901 Method of double-side lapping a wafer and an apparatus therefor |
| 03/01/2001 | WO2000079579A3 Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma output or adjusting the same upwards |
| 02/28/2001 | CN1285422A Method for removing heavy metal impurity from monocrystal silicon |
| 02/20/2001 | US6191009 Method for producing silicon single crystal wafer and silicon single crystal wafer |
| 02/20/2001 | US6190631 Low defect density, ideal oxygen precipitating silicon |
| 02/15/2001 | WO2001011115A1 Method for producing segmented crystals |
| 02/15/2001 | DE19953152C1 Process for wet-chemical treatment of semiconductor wafer after mechanical treatment in lapping machine comprises subjecting to ultrasound in an alkaline cleaning solution before etching and rinsing steps |
| 02/15/2001 | DE19936651A1 Verfahren und Herstellung eines segmentierten Kristalls Process and producing a segmented crystal |
| 02/13/2001 | US6187092 Method and apparatus for controlling the thickness of a gate oxide in a semiconductor manufacturing process |
| 02/13/2001 | CA2230262C Silicon carbide gemstones |
| 02/07/2001 | CN1061705C Precision control oxygen precipitation in silicone |
| 02/06/2001 | US6184498 Apparatus for thermally processing semiconductor wafer |
| 01/30/2001 | US6180270 Heating gallium nitride bearing substrate layer according to predetermined time-temperature profile |
| 01/30/2001 | US6179910 Pulling |
| 01/30/2001 | US6179909 Work crystal orientation adjusting method and apparatus |
| 01/25/2001 | WO2001005726A2 METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7-δ HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES |
| 01/24/2001 | EP1071116A1 Method and apparatus for removing material from the periphery of a substrate, using a remote plasma source |
| 01/23/2001 | US6177358 Photo-stimulated etching of CaF2 |
| 01/23/2001 | CA2171375C Manufacturing method of a silicon wafer having a controlled bmd concentration in the bulk and a good dz layer |
| 01/18/2001 | DE10023001A1 Process for mechanically processing monocrystals used in the production of semiconductor wafers comprises rotating the monocrystal about its crystallographic longitudinal axis and treating with ultrasound |
| 01/11/2001 | WO2001002628A1 Doped diamond |
| 01/11/2001 | DE10031603A1 Production of a semiconductor wafer comprises etching the wafer using an etching medium along a flow direction laminar to an edge of the wafer |