| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 04/03/2002 | EP1192646A1 Cyclic thermal anneal for dislocation reduction |
| 04/03/2002 | EP1192299A1 Doping of crystalline substrates |
| 04/02/2002 | US6364946 Methods for growing large-volume single crystals from calcium fluoride and their uses |
| 03/28/2002 | WO2002025717A1 Silicon wafer and silicon epitaxial wafer and production methods therefor |
| 03/28/2002 | WO2002025716A1 Method of producing silicon wafer and silicon wafer |
| 03/28/2002 | WO2001094658A3 Process for production of fullerene coatings |
| 03/28/2002 | WO2001005726A3 METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7-δ HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES |
| 03/27/2002 | EP1190123A1 Encapsulation of crystals via multilayer coatings |
| 03/27/2002 | EP1090166B1 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 03/26/2002 | US6362487 Method and device for nondestructive detection of crystal defects |
| 03/21/2002 | WO2002023594A2 Apparatus and method for reducing contamination on thermally processed semiconductor substrates |
| 03/21/2002 | US20020034881 Selecting surface quality for surface of etched wafer and quantity of silicon to be removed from surface of wafer during the etching process; determining concentration of hydrofluoric acid in an aqueous etching solution; etching |
| 03/21/2002 | US20020033130 Method of producing silicon carbide device by cleaning silicon carbide substrate with oxygen gas |
| 03/21/2002 | DE10045264A1 Verfahren zum Aufheizen eines Werkstückes, insbesondere eines optischen Elementes A method of heating a workpiece, in particular an optical element |
| 03/20/2002 | EP1189285A1 Production method for bonding wafer and bonding wafer produced by this method |
| 03/20/2002 | EP1189268A1 Method for manufacturing silicon mirror wafer, silicon mirror wafer, and heat treatment furnace |
| 03/20/2002 | EP1188545A2 Method for heating a work piece, in particular an optical element |
| 03/19/2002 | US6358867 Orientation independent oxidation of silicon |
| 03/19/2002 | US6358288 Touchless stabilizer for processing spherical devices |
| 03/14/2002 | US20020031615 Process for production of ultrathin protective overcoats |
| 03/14/2002 | US20020030042 Method for heating a workpiece |
| 03/13/2002 | EP1185548A2 Method for drying protein crystals |
| 03/10/2002 | WO2002077331A1 Method for flattening surface of oxide crystal to ultra high degree |
| 03/07/2002 | US20020028314 Bulk single crystal gallium nitride and method of making same |
| 03/06/2002 | EP1183720A1 Method for cleaning a silicon substrate surface and use for making integrated electronic components |
| 03/05/2002 | US6352942 Exposing silicon layer on germanium layer to dry oxygen gas at exposure temperature sufficient to induce oxidation of silicon layer substantially only by thermal energy, for time selected to oxidize only portion of silicon layer |
| 02/28/2002 | WO2001075195A3 Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and a waveguide polarization mode converter using the same |
| 02/28/2002 | WO2001031698A3 Method for thermally treating semiconductor substrates |
| 02/27/2002 | EP1181401A2 Semi-insulating silicon carbide without vanadium domination |
| 02/26/2002 | US6350389 Method for producing porous diamond |
| 02/26/2002 | US6350310 Crystal growth and annealing for minimized residual stress |
| 02/26/2002 | US6350191 Surface functionalized diamond crystals and methods for producing same |
| 02/21/2002 | WO2001068271A8 Controlling surface chemistry on solid substrates |
| 02/21/2002 | US20020020338 Methods of making fluoride crystal and fluoride crystal lens |
| 02/21/2002 | DE10059469C2 Verfahren und Vorrichtung zum Erkennen von Kristallbaufehlern in Siliciumeinkristallen Method and apparatus for detecting crystal defects in silicon single crystals |
| 02/20/2002 | CN1079450C Water thermal prepn. method for red, blue and ultraviolet ray emmitting porous silicon |
| 02/19/2002 | US6348094 SAW or LSAW device piezoelectric single crystal wafer and method of making |
| 02/07/2002 | WO2002011196A1 Method for manufacturing single-crystal silicon wafers |
| 02/06/2002 | EP1178135A1 Piezoelectric oxide single crystal wafer |
| 02/05/2002 | US6344150 Etching method |
| 01/31/2002 | WO2002008121A2 A method for shaping a nanotube and a nanotube shaped thereby |
| 01/31/2002 | WO2002008120A2 Telescoped multiwall nanotube and manufacture thereof |
| 01/31/2002 | US20020011202 Crystal growth and annealing method and apparatus |
| 01/31/2002 | DE10010016C1 Vorrichtung und Verfahren zur plasmagestützten Oberflächenbehandlung von Substraten im Vakuum Apparatus and method for plasma-enhanced surface treatment of substrates in vacuum |
| 01/24/2002 | WO2002006568A2 Slicing of single-crystal films using ion implantation |
| 01/24/2002 | US20020007779 Low defect density, self-interstitial dominated silicon |
| 01/22/2002 | US6340642 Cleaning surface to remove oxide; drying the surface by blowing a non-oxidizing gas thereon; directly applying layer of lacquer onto surface at temperature below 100.degree. c.; drying layer of lacquer; forming conductive structure |
| 01/22/2002 | US6340535 Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device |
| 01/22/2002 | CA2253136C Single crystal sic and a method of producing the same |
| 01/17/2002 | US20020006877 Annealing using oxygen |
| 01/16/2002 | EP1171653A1 Slicing of single-crystal films using ion implantation |
| 01/15/2002 | US6338756 In-situ post epitaxial treatment process |
| 01/10/2002 | WO2002003432A2 Process for etching silicon wafers |
| 01/10/2002 | US20020002942 Comprising a single crystal of zinc oxide (ZnO) that contains a p-type dopant composed of nitrogen (N), and an n-type dopant composed of any one or more elements selected from boron, aluminum, gallium, and hydrogen |
| 01/03/2002 | WO2002001608A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 01/03/2002 | US20020001680 Process for production of ultrathin protective overcoats |
| 01/03/2002 | DE10108542A1 Production of a wafer used in the production of integrated components comprises polishing the wafer, treating with an oxidant, cleaning, rinsing and drying, inspecting one polished side of the wafer |
| 01/02/2002 | EP1165864A1 Fabrication of periodic surface structures with nanometer-scale spacings |
| 01/02/2002 | CN1329751A An epitaxial silicon wafer with intrinsic gettering and method for preparation thereof |
| 12/27/2001 | WO2001098563A2 Orientation independent oxidation of silicon |
| 12/27/2001 | US20010055871 Method of producing p-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same |
| 12/27/2001 | US20010055689 Extruded thermoplastic barrier coating carpet backing materials used to provide a durable, highly flexible carpet backing capable of being thermoformed |
| 12/27/2001 | US20010055660 Bulk single crystal gallium nitride and method of making same |
| 12/27/2001 | US20010054386 Oxidation processing unit |
| 12/25/2001 | US6333279 Method for producing silicon wafer and silicon wafer |
| 12/25/2001 | US6332922 Manufacturing method for calcium fluoride and calcium fluoride for photolithography |
| 12/20/2001 | US20010052517 Thermal processing apparatus |
| 12/20/2001 | DE10024710A1 Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen Setting of defect profiles in crystals or crystal-like structures |
| 12/18/2001 | US6331208 Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor |
| 12/13/2001 | WO2001094658A2 Process for production of fullerene coatings |
| 12/12/2001 | EP0947466B1 Process for producing carbon nanotubes, process for producing carbon nanotube film, and structure provided with carbon nanotube film |
| 12/12/2001 | CN1326518A Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 12/12/2001 | CN1326018A Heat treatment of ZnSe crystal substrates, heat treated substrates and optical emitter |
| 12/11/2001 | US6329269 Semiconductor device manufacturing with amorphous film cyrstallization using wet oxygen |
| 12/11/2001 | US6329070 Fabrication of periodic surface structures with nanometer-scale spacings |
| 12/11/2001 | US6328795 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 12/11/2001 | US6328560 Pressure processing apparatus for semiconductors |
| 12/06/2001 | WO2001091922A2 Process for production of ultrathin protective overcoats |
| 12/06/2001 | US20010049080 Heat treatment system and method |
| 12/06/2001 | US20010048266 Piezoelectric oxide single crystal wafer |
| 12/06/2001 | DE10025746A1 Production of a solid body substrate used in the silicon switching circuits comprises a cylindrical solid body and cutting out substrate plates in the direction of the cylinder axis, and laterally joining several substrate plates |
| 12/05/2001 | EP1160838A2 Heat treatment system and method |
| 12/05/2001 | EP0975828B1 Etching method |
| 12/05/2001 | EP0650465B1 Conversion of fullerenes to diamond |
| 11/29/2001 | US20010046786 High-temperature high-pressure processing method for semiconductor wafers, and an anti-oxidizing body used for the method |
| 11/29/2001 | US20010046609 Diffusing aluminum (Al) through the zinc-selenide (ZnSe) substrate by forming an Al film on the substrate, heat treating in selenium atmosphere and then heat treating in a zinc atmosphere; monochromatic light emitting diodes (LED's) |
| 11/29/2001 | DE10023012A1 Silicon wafer used in the production of electronic components has crystal-originated particles in its surface which change in morphology in such a way that there is no destructive influence on the gate oxide material |
| 11/28/2001 | EP0993370A4 Eutectic bonding of single crystal components |
| 11/27/2001 | US6324003 Calcium fluoride (CaF2) stress plate and method of making the same |
| 11/27/2001 | US6322891 Thermally-diffused boron diamond and its production |
| 11/22/2001 | WO2001088974A1 Adjusting defect profiles in crystal or crystalline structures |
| 11/22/2001 | US20010044219 Method and apparatus for stabilizing high pressure oxidation of a semiconductor device |
| 11/22/2001 | US20010042509 Method and apparatus for controlling the thickness of a gate oxide in a semiconductor manufacturing process |
| 11/21/2001 | EP1156140A1 A method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device |
| 11/21/2001 | CN1323362A Thermally annealed, low defect density single crystal silicon |
| 11/20/2001 | US6319430 Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same |
| 11/19/2001 | CA2348124A1 A method for the heat treatment of a znse crystal substrate, heat treated substrate and light emission device |
| 11/15/2001 | WO2001086038A2 Photonic bandgap materials based on germanium |
| 11/15/2001 | US20010041462 Apparatus for forming silicon oxide film and method of forming silicon oxide film |
| 11/15/2001 | US20010041215 Large strongly linked superconducting monoliths and process for making the same |