Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
10/2003
10/29/2003EP0853690B1 Silicon carbide gemstones
10/28/2003US6639247 Semi-insulating silicon carbide without vanadium domination
10/28/2003US6638357 Method for revealing agglomerated intrinsic point defects in semiconductor crystals
10/23/2003WO2003087442A1 Method of making stoichiometric lithium niobate
10/23/2003WO2003043066A3 Layered structures
10/23/2003US20030199148 Method of reducing the thickness of a silicon substrate
10/23/2003US20030196587 Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation
10/21/2003US6635587 Method for producing czochralski silicon free of agglomerated self-interstitial defects
10/21/2003US6635110 Cyclic thermal anneal for dislocation reduction
10/16/2003WO2003085367A1 Method for producing the sensing element of an ultra-violet indicator
10/16/2003WO2003005443A3 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure
10/16/2003US20030194940 Method of selectively aligning and positioning nanometer-scale components using AC fields
10/14/2003US6632278 Low defect density epitaxial wafer and a process for the preparation thereof
10/09/2003US20030190796 Method of forming spatial regions of a second material in a first material
10/09/2003US20030190132 Mixing powders containing lithium and niobium, then sintering to form monolithic solids, then heating to difuse titanium or lithium into substrates, used as waveguides, switches and modulators
10/08/2003EP1351283A1 Method and apparatus for treating article to be treated
10/08/2003EP1349700A2 Method of making optical fluoride laser crystal components
10/08/2003CN1447448A Semiconductor substrate based on Ôàó family nitride and its mfg. method
10/07/2003US6629368 Method for isothermal brazing of single crystal components
10/02/2003WO2003080902A1 METHOD OF MICROFABRICATING CRYSTAL TiO2 AND MICROFABRICATED CRYSTAL TiO2
10/02/2003US20030186493 Method and device for making substrates
10/02/2003US20030186073 Heterointegration of materials using deposition and bonding
10/02/2003US20030183158 Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer
10/02/2003US20030183157 Group III nitride based semiconductor substrate and process for manufacture thereof
10/01/2003EP1348048A2 Process for preparing single crystal silicon having improved gate oxide integrity
10/01/2003EP1347852A2 Method of forming nano-crystalline structures and product formed thereof
10/01/2003CN1122591C In-line cleaning method after polishing
09/2003
09/30/2003US6627522 Method for enhancing the solubility of dopants in silicon
09/25/2003WO2003078699A2 Synthesis of stable colloidal nanocrystals using organic dendrons
09/23/2003US6624390 Substantially-uniform-temperature annealing
09/23/2003US6624009 Forming a crystalline semiconductor film on a glass substrate
09/18/2003WO2003076699A1 Method for making an oriented optical fluoride crystal blank
09/18/2003WO2003076698A1 Binary and ternary crystal purification and growth method and apparatus
09/18/2003WO2002093201B1 Preferred crystal orientation optical elements from cubic materials
09/18/2003US20030175531 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure
09/18/2003US20030172865 Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300mm and its production method
09/17/2003CN1442511A Convex angle compensation method of crystal orientation on silicon by potassium hydroxide solution
09/16/2003US6621048 Method for heating a workpiece
09/12/2003WO2003075336A1 Process for producing silicon single crystal layer and silicon single crystal layer
09/11/2003US20030170583 A reaction furnace for making semiconductor wafers, connecting substrates togather with a glassy carbon or graphite
09/11/2003US20030168004 Manufacturing apparatus of an insulation film
09/10/2003EP1342275A1 Epitaxial oxide films via nitride conversion
09/10/2003EP1027483A4 Method of polishing cvd diamond films by oxygen plasma
09/10/2003CN1441854A Process for production of super thin protective coatings
09/10/2003CN1441092A Annealing process of Yb: YAG crystal
09/09/2003US6617228 Semiconductor material and method for enhancing solubility of a dopant therein
09/04/2003WO2003073441A1 Process of producing multicrystalline silicon substrate and solar cell
09/04/2003WO2003072284A2 Method of removing casting defects
09/04/2003US20030165418 Controlling adjustment; vapor deposition using xylene
09/04/2003US20030164139 Method for manufacturing single-crystal-silicon wafers
09/03/2003EP1340567A1 Method of removing casting defects
09/03/2003EP0903427B1 Apparatus and method for producing crystals by the czochralski method and crystals produced by this method
09/03/2003CN1439750A Lithium niobate crystal waveguide preparation by ion implantation and anneal
09/02/2003US6613461 Gallium nitride-based compound semiconductor chip and method for producing the same, and gallium nitride-based compound semiconductor wafer
08/2003
08/28/2003WO2003071595A1 LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD, AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE MONOCRYSTALLINE THIN FILM
08/28/2003WO2003071588A1 Production method of sic monitor wafer
08/28/2003US20030159649 In-situ post epitaxial treatment process
08/28/2003US20030159642 Devolatilizing the volatile gases in carbonaceous feedstock by heating and oxidation, converting to powders, purifying the powders to remove the hydrocarbons by solvent extraction, coking to form a high density carbon foams
08/26/2003US6610213 Process for the wet chemical treatment of a semiconductor wafer
08/21/2003WO2003069019A1 Directed assembly of highly-organized carbon nanotube architectures
08/21/2003US20030157784 Process and apparatus to subdivide objects
08/21/2003US20030157376 III-V nitride substrate boule and method of making and using the same
08/21/2003US20030155326 Reducing tread separation in tires
08/21/2003CA2475790A1 Directed assembly of highly-organized carbon nanotube architectures
08/20/2003EP1017504B1 Method for enhancing the color of minerals useful as gemstones
08/20/2003CN1437229A Method for thermal processing silicon chip and silicon chip produced with the same method
08/20/2003CN1436880A Method of eliminating compounding defect in HgCdTe material produced via melt growth process
08/19/2003US6607980 Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same
08/14/2003WO2003067637A2 Methods of treating a silicon carbide substrate for improved epitaxial deposition
08/14/2003US20030152194 Integrated crystal mounting and alignment system for high-throughput biological crystallography
08/14/2003CA2474883A1 Methods of treating a silicon carbide substrate for improved epitaxial deposition
08/13/2003CN1435865A Insulation film mfg. device
08/12/2003US6605321 Method of treating materials by irradiation
08/12/2003US6605150 Low defect density regions of self-interstitial dominated silicon
08/07/2003WO2003065420A2 Method for producing a semiconductor element
08/07/2003US20030148711 Method of making optical fluoride laser crystal components
08/07/2003US20030148634 Process for the heat treatment of a silicon wafer, and silicon wafer produced
08/07/2003US20030145779 Shaped nanocrystal particles and methods for making the same
08/07/2003DE20214521U1 Production of a semiconductor component used in the production of substrate-less luminescent diodes comprises separating a semiconductor layer from a substrate by irradiating with a laser beam having a plateau-shaped spatial beam profile
08/06/2003EP1332247A1 Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation
08/06/2003CN1434567A Etching method, etched product, piezoelectric vibration device and making method thereof
08/05/2003US6602613 Heterointegration of materials using deposition and bonding
07/2003
07/31/2003WO2003062908A2 Three-dimensional photonic crystal waveguide structure
07/31/2003WO2002093201A9 Preferred crystal orientation optical elements from cubic materials
07/31/2003US20030143150 High pressure/high temperature production of colorless and fancy-colored diamonds
07/24/2003WO2003060981A1 Method for gettering transition metal impurities in silicon crystal
07/23/2003CN1432192A Method of doping silicon with phosphorus and growing oxide on silicon in presence of steam
07/23/2003CN1431930A High temp/high pressure colour change of diamond
07/23/2003CN1431929A High temp/high pressure colour change of diamond
07/23/2003CN1431851A Mask and its mfg. method, electroluminance device and its mfg. method and electronic machine
07/23/2003CN1115715C Method of processing semiconductor film and semiconductor device produced by such method
07/22/2003US6596651 Method for stabilizing high pressure oxidation of a semiconductor device
07/22/2003US6596079 III-V nitride substrate boule and method of making and using the same
07/17/2003US20030134520 Silicon semiconductor substrate and method for production thereof
07/17/2003US20030134492 Adjusting defect profiles in crystal or crystalline-like structures
07/17/2003US20030133683 Three-dimensional photonic crystal waveguide structure and method
07/17/2003US20030131785 Pattern for monitoring epitaxial layer washout
07/17/2003US20030131782 Three-dimensional complete bandgap photonic crystal formed by crystal modification
07/16/2003EP1327617A1 Method for joining
07/15/2003US6593253 Method of manufacturing semiconductor device
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