Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
07/2003
07/15/2003US6592839 Tailoring nanocrystalline diamond film properties
07/15/2003US6592835 Forming inclusion free substrate as optical material for microfluidic devices
07/10/2003US20030127042 Vapor phase proton is diffused into the ferroelectric crystal
07/10/2003US20030127041 Lapping, mechanical polishing, and reducing internal stress of a gallium, aluminum and indium nitride wafer by thermal annealing or chemical etching; crystallographic plane surfaces
07/09/2003EP1326270A1 Silicon wafer and silicon epitaxial wafer and production methods therefor
07/09/2003EP1326269A1 Method of producing silicon wafer and silicon wafer
07/08/2003US6589857 Manufacturing method of semiconductor film
07/08/2003US6589447 Forming pattern without using resist coating
07/08/2003US6589349 Apparatus for forming silicon oxide film and method of forming silicon oxide film
07/08/2003US6589337 Method of producing silicon carbide device by cleaning silicon carbide substrate with oxygen gas
07/08/2003CA2266801C Method for producing porous diamond
07/08/2003CA2233616C A method of biaxially aligning crystalline material
07/03/2003WO2003054953A1 Shaped nanocrystal particles and methods for making the same
07/03/2003WO2003054590A1 Fluoride crystal material for optical device used for photolithographic apparatus and its manufacturing method
07/02/2003EP1323182A2 Apparatus and method for reducing contamination on thermally processed semiconductor substrates
07/02/2003CN1427960A Optical device
06/2003
06/26/2003WO2003052150A2 Superelastic element made of a copper alloy and method for imparting and preserving a curvature of a given geometry
06/26/2003WO2002093201A3 Preferred crystal orientation optical elements from cubic materials
06/26/2003US20030118828 Method for treating a diamond surface and corresponding diamond surface
06/26/2003US20030116081 Process for preparing defect free silicon crystals which allows for variability in process conditions
06/25/2003EP0853600B1 A method of biaxially aligning crystalline material
06/25/2003CN1426497A III-V nitride substrate boule and method of making and using same
06/24/2003US6583024 High resistivity silicon wafer with thick epitaxial layer and method of producing same
06/19/2003WO2003050598A2 Integrated crystal mounting and alignment system for high-throughput biological crystallography
06/19/2003US20030111440 Method of fabricating and a device that includes nanosize pores having well controlled geometries
06/18/2003EP1125008B1 Thermally annealed, low defect density single crystal silicon
06/18/2003DE10159833C1 Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben A process for producing a plurality of semiconductor wafers
06/18/2003CN1424746A Silicon semiconductor crystal wafers and manufacturing method for multiple semiconductor crystal wafers
06/18/2003CN1424438A Substrate clamping devices for film growth by liquid phase extension
06/17/2003US6580151 Mechanical resistance of a single-crystal silicon wafer
06/17/2003US6579359 Method of crystal growth and resulted structures
06/12/2003WO2003049201A1 Method of making thin silicon sheets for solar cells
06/12/2003WO2003048041A1 Method for creating silicon dioxide film
06/12/2003US20030109139 Silicon semiconductor wafer, and process for producing a multiplicity of semiconductor wafers
06/12/2003US20030109115 High resistivity silicon wafer with thick epitaxial layer and method of producing same
06/12/2003US20030108665 Fabricating fluoride crystal materials such as calcium fluoride, magnesium fluoride, suitable for optical elements, lenses, window materials, prisms, employed in a wide wavelength range
06/12/2003US20030106495 Heat treatment system and method
06/11/2003CN1422995A Tellurium-Zinc-cadmium crystal annealing and modifying method
06/04/2003EP1316849A2 Method of removing color centers from film coated fluoride optical elements
06/03/2003US6573471 Welding method for semiconductor materials
06/03/2003US6573209 Zirconium nitride and yttrium nitride solid solution composition
05/2003
05/29/2003US20030097977 In-situ post epitaxial treatment process
05/28/2003CN1110070C Cleaner for large wafer
05/27/2003US6569535 Silicon wafer and epitaxial silicon wafer utilizing same
05/22/2003WO2003043066A2 Layered structures
05/21/2003EP1313137A1 Method for manufacturing single-crystal silicon wafers
05/20/2003US6565648 Production method of ferro-electric crystals having periodically-poled structure
05/15/2003WO2002053490A3 Method of making optical fluoride laser crystal components
05/15/2003US20030091934 Fluorides of alkaline earth cations having different optical polarizabilities to produce an overall isotropic polarizability
05/15/2003US20030089967 Silicon wafer and fabricating method therefor
05/15/2003US20030089306 Method for producing crystal and/or crystal materials containing fluorine
05/14/2003CN1108400C Method for removing heavy metal impurity from monocrystal silicon
05/13/2003US6562720 Apparatus and method for surface finishing a silicon film
05/13/2003US6562128 In-situ post epitaxial treatment process
05/13/2003US6562127 Method of making mosaic array of thin semiconductor material of large substrates
05/13/2003US6562124 Method of manufacturing GaN ingots
05/13/2003US6562123 Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamber
05/08/2003WO2003038873A2 Removing an amorphous oxide from a monocrystalline surface
05/08/2003DE10161202C1 Reducing the thickness of a silicon substrate which has been made porous comprises making porous the rear side of the substrate lying opposite a front side which has been made porous, then removing the porous material formed
05/07/2003EP1308544A1 SILICON SINGLE CRYSTAL WAFER HAVING VOID DENUDED ZONE ON THE SUFRACE AND DIAMETER OF ABOVE 300 mm AND ITS PRODUCTION METHOD
05/06/2003US6558465 Single-crystal optical element having flat light-transmitting end surface inclined relative to cleavage
05/06/2003CA2263352C Single crystal sic and a method of producing the same
05/01/2003US20030082893 Method of fabricating nitride semiconductor and method of fabricating semiconductor device
05/01/2003US20030079674 Silicon semiconductor substrate and process for producing the same
04/2003
04/29/2003US6555407 Method for the controlled oxidiation of materials
04/29/2003US6555194 Process for producing low defect density, ideal oxygen precipitating silicon
04/29/2003US6554920 High-temperature alloy and articles made therefrom
04/23/2003EP1304733A2 Process of and apparatus for heat-treating II-IV compound semiconductors and semiconductor heat-treated by the process
04/23/2003CN1412827A Semiconductor heat treatment process and equipment, and semiconductor by said process heat treatment
04/22/2003US6551946 Two-step oxidation process for oxidizing a silicon substrate wherein the first step is carried out at a temperature below the viscoelastic temperature of silicon dioxide and the second step is carried out at a temperature above the viscoelastic temperature
04/22/2003US6551398 Heat treatment method for a silicon monocrystal wafer and a silicon monocrystal wafer
04/17/2003WO2002097173A3 Semi-insulating silicon carbide without vanadium domination
04/17/2003US20030073259 Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process
04/17/2003US20030071542 Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same
04/17/2003US20030070611 SiC single crystal, method for manufacturing SiC single crystal, SiC water having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device
04/10/2003US20030068891 Method of manufacturing a wafer
04/10/2003US20030068890 Argon/ammonia rapid thermal annealing for silicon wafers
04/10/2003US20030068502 A surface treatment to form a quality, ultra-thin silicon wafer, first by smoothing the surface, setting annealing; high speed pulling a silicon ingot or rapidly cooling a pulled single crystal, slicing a silicon wafer off from ingot
04/10/2003US20030067679 Preferred crystal orientation optical elements from cubic materials
04/10/2003US20030066177 Method for isothermal brazing of single crystal components
04/09/2003EP1299900A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
04/08/2003US6544330 Bonded, walk-off compensated optical elements
04/03/2003DE10162296C1 Producing and maintaining two- or three-dimensional curve in rod or band of super-elastic, monocrystalline copper alloy comprises heating it, pressing into heated mold, cooling, reheating and quenching
04/02/2003EP1298234A2 Method of manufacturing a single crystal substrate
04/01/2003US6541394 Method of making a graded grown, high quality oxide layer for a semiconductor device
04/01/2003US6541117 Silicon epitaxial wafer and a method for producing it
04/01/2003US6540827 Slicing of single-crystal films using ion implantation
04/01/2003US6540509 Heat treatment system and method
03/2003
03/27/2003WO2003025985A1 Notched compound semiconductor wafer
03/27/2003WO2003025637A1 Photolithographic uv transmitting mixed fluoride crystal
03/27/2003WO2003025636A1 Photolithographic method and uv transmitting fluoride crystals with minimized spatial dispersion
03/27/2003WO2003000964B1 METHOD FOR PREPARING GaN BASED COMPOUND SEMICONDUCTOR CRYSTAL
03/27/2003US20030056718 Method of manufacturing single crystal substrate
03/27/2003US20030056715 Silicon semiconductor substrate and preparation thereof
03/26/2003EP1295320A2 Process for etching silicon wafers
03/26/2003EP0944916B1 Very long and highly stable atomic wires and method for making these wires
03/26/2003CN1405842A Silicon semiconductor base-plate and its making method
03/26/2003CN1405841A Silicon-semiconductor lining and its producing method
03/26/2003CN1104041C Method for producing wafer and apparatus employed therein
03/25/2003US6538285 Silicon wafer
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