Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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06/10/2004 | US20040110002 Semiconductor nanocrystal heterostructures |
06/10/2004 | US20040109486 Sapphire monocrystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same |
06/09/2004 | CN1502717A Heat treatment method for improving high-niobium reinforcing type monocrystal high temp alloy use property |
06/08/2004 | US6746932 Method of reducing the thickness of a silicon substrate |
06/03/2004 | WO2004046021A1 Dispersion of nanowires of semiconductor material |
06/03/2004 | US20040104406 Method for treating the surface of a semiconductor material |
06/02/2004 | EP1423259A1 Free-standing (al, ga, in)n and parting method for forming same |
06/02/2004 | CN1502120A Treatment method and apparatus of substrate |
06/02/2004 | CN1152415C Method for manufacturing discrete substrate |
06/01/2004 | US6744065 Single electron devices |
06/01/2004 | US6743495 Thermal annealing process for producing silicon wafers with improved surface characteristics |
06/01/2004 | US6743481 Process for production of ultrathin protective overcoats |
06/01/2004 | US6743289 Thermal annealing process for producing low defect density single crystal silicon |
05/27/2004 | US20040101976 Synthesis of stable colloidal nanocrystals using organic dendrons |
05/27/2004 | US20040099205 Method of growing oriented calcium fluoride single crystals |
05/26/2004 | EP1422753A1 Production method for anneal wafer and anneal wafer |
05/26/2004 | CN1500159A Low defect density silicon substantially free of oxidution induced stacking faults having vacancy-dominated core |
05/25/2004 | US6740912 Semiconductor device free of LLD regions |
05/25/2004 | US6740421 Rolling process for producing biaxially textured substrates |
05/25/2004 | US6740403 Graphitic polyhederal crystals in the form of nanotubes, whiskers and nanorods, methods for their production and uses thereof |
05/20/2004 | US20040096707 Oxidation of nitride layer; forming oxide; high temperature superconductivity |
05/20/2004 | US20040096587 Epitaxial oxide films via nitride conversion |
05/19/2004 | CN1497680A Semiconductor chip with asymmetric edge contour and manufacturing method thereof |
05/18/2004 | US6736893 Process for growing calcium fluoride monocrystals |
05/18/2004 | US6736636 Thermal processor with gas supply |
05/13/2004 | WO2004040650A1 Soi wafer and method for manufacturing soi wafer |
05/13/2004 | US20040091224 Optical device |
05/13/2004 | US20040089224 Process for producing low defect density silicon |
05/13/2004 | US20040089023 Method for producing optical member |
05/13/2004 | DE10239775B3 Production of a silicon wafer used in the production of a semiconductor component comprises treating the cleaned wafer with an aqueous ozone solution, coating with polycrystalline silicon, finely grinding, and epitaxially growing the wafer |
05/12/2004 | CN1149585C Adjustment of mosaic spread for HOPG material |
05/11/2004 | US6733592 High-temperature and high-pressure treatment device |
05/06/2004 | US20040084152 Apparatus for large-scale diamond polishing |
05/06/2004 | US20040083948 Method for low temperature photonic crystal structures |
05/06/2004 | EP1222324B1 Czochralski process for growing single crystal silicon by controlling the cooling rate |
05/04/2004 | US6730580 Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing |
04/29/2004 | WO2004035879A1 Method of measuring point defect distribution of silicon single crystal ingot |
04/29/2004 | US20040079280 Combines deposition of synthetic diamond films with reactive etching processes; forming diamond nuclei on substrate, growing layer of textured diamond film on substrate, etching textured diamond film |
04/22/2004 | WO2004034478A2 Layer arrangement of hetero-connected semiconductor layers, comprising at least one intermediate separation layer, and method for the production thereof |
04/22/2004 | WO2004034457A1 Annealed wafer and annealed wafer manufacturing method |
04/22/2004 | WO2004034453A1 Method for treating semiconductor material |
04/22/2004 | DE10296668T5 Verfahren zur Züchtung von Kalziumfluorid-Monokristallen A method of growing monocrystals of calcium fluoride |
04/21/2004 | EP1411153A1 METHOD FOR PREPARING GaN BASED COMPOUND SEMICONDUCTOR CRYSTAL |
04/21/2004 | EP1409776A1 Method of making nanotube-based material with enhanced electron field emission properties |
04/21/2004 | CN1491300A Method for reducing oxygen component and carbon component in fluoride |
04/15/2004 | WO2004031456A2 Method for producing aluminum antimonide crystals for radiation detectors |
04/15/2004 | US20040070012 Low defect density silicon |
04/15/2004 | DE19549513B4 Multi-form crystal fabrication process |
04/15/2004 | DE10247735B3 Layer arrangement used in the production of thin layer solar cells comprises a substrate, a metal film, a metal dichalcogenide separating layer and a chalcogenide semiconductor layer |
04/14/2004 | EP1408540A1 Production method for anneal wafer and anneal wafer |
04/14/2004 | EP1408348A1 Method for producing optical member |
04/14/2004 | CN1489643A Process for preparing single crystal silicon having improved gate oxide integrity |
04/13/2004 | US6720273 Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma out put or adjusting the same upwards |
04/08/2004 | WO2004030047A1 Method of producing lithium tantalate substrate for surface acoustic wave element |
04/08/2004 | WO2004030046A1 Method of producing lithium tantalate substrate for surface acoustic wave element |
04/08/2004 | WO2004005593A3 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects |
04/08/2004 | US20040067644 Non-contact etch annealing of strained layers |
04/08/2004 | US20040065889 Semiconductor wafer, semiconductor device, and methods for fabricating the same |
04/08/2004 | DE10340589A1 Production of a calcium fluoride single crystal comprises contacting a calcium fluoride charge with a seed crystal, heating to a temperature sufficient to form a melt, pulling a crystal through a temperature gradient zone, tempering |
04/07/2004 | EP1405110A2 Preferred crystal orientation optical elements from cubic materials |
04/07/2004 | EP1404902A1 High surface quality gan wafer and method of fabricating same |
04/01/2004 | WO2004027125A1 Crystal base plate and pressing device |
04/01/2004 | WO2004027123A1 Single crystal diamond |
04/01/2004 | US20040062696 Method for reducing oxygen component and carbon component in fluoride |
04/01/2004 | US20040061063 High resistivity aluminum antimonide radiation detector |
04/01/2004 | DE10243757A1 Semiconductor chip manufacturing method, e.g. for LED manufacture, by matching thermal expansion coefficient to carrier to radiation profile and pulse length of laser beam used to separate from substrate |
03/31/2004 | EP1403663A1 Optical member, process for producing the same, and projection aligner |
03/31/2004 | EP1402089A2 Synthesis of stable colloidal nanocrystals using organic dendrons |
03/31/2004 | CN1144064C Method of organic film deposition |
03/25/2004 | WO2003078699A9 Synthesis of stable colloidal nanocrystals using organic dendrons |
03/25/2004 | US20040058080 Method for creating silicon dioxide film |
03/25/2004 | US20040055998 Method for providing a smooth wafer surface |
03/24/2004 | CN1483669A Method for adjusting unidimensional nano material direction and shape |
03/23/2004 | US6709957 Method of producing epitaxial wafers |
03/23/2004 | US6709730 Method of making diamond product and diamond product |
03/23/2004 | US6709566 Shaping electrode removes material under a potential difference to controllably shape to a desired contour |
03/18/2004 | WO2004022821A1 Coloured diamond |
03/18/2004 | US20040053515 Apparatus and method for surface finishing a silicon film |
03/18/2004 | US20040053432 Method for processing one-dimensional nano-materials |
03/18/2004 | US20040050483 Method of fabricating substrates, in partictular for optics, electronics or optoelectronics |
03/18/2004 | US20040050318 Calcium fluoride and its manufacture method |
03/18/2004 | DE10337757A1 Semiconductor wafer, has asymmetric edge profile extending between inner and outer edge profiles with arc that defines inner profile at point of intersection with top surface of wafer |
03/17/2004 | EP1397835A2 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure |
03/17/2004 | CN1142330C Vanadate for measuring dislocation density and etching process of doped monocrystal |
03/16/2004 | US6706324 Machining body with microstructure free of nano-crystals to produce chips consisting of nano-crystals as a result of sufficient strain deformation, chips being in form of particulates, ribbons, wires, filaments |
03/16/2004 | US6706204 Method of fabricating and a device that includes nanosize pores having well controlled geometries |
03/11/2004 | WO2004020705A1 Epitaxial wafer and its manufacturing method |
03/10/2004 | CN1480569A Method of reducing crystal defect density |
03/10/2004 | CN1480568A Method for preparing bonding taser crystal in vertical type with weight applied from top |
03/09/2004 | US6703144 Heterointegration of materials using deposition and bonding |
03/09/2004 | US6702891 Method of heat treating fluoride crystal |
03/04/2004 | WO2004019403A2 Mechanical recycling of a wafer comprising a buffer layer, after having taken a layer therefrom |
03/04/2004 | WO2004018743A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method |
03/04/2004 | US20040041143 Semiconductor wafers having asymmetric edge profiles that facilitate high yield processing by inhibiting particulate contamination and methods of forming same |
03/04/2004 | US20040040654 Method for joining |
03/03/2004 | EP1394293A1 A process for imparting and enhancement of colours in gemstone minerals and gemstone minerals obtained thereby |
03/03/2004 | EP1393354A1 Method and device for the thermal treatment of substrates |
03/03/2004 | EP1393351A1 Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure |
03/03/2004 | EP1392895A2 Semi-insulating silicon carbide without vanadium domination |
02/26/2004 | US20040038527 Method of forming spatial regions of a second material in a first material |