Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
06/2004
06/10/2004US20040110002 Semiconductor nanocrystal heterostructures
06/10/2004US20040109486 Sapphire monocrystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same
06/09/2004CN1502717A Heat treatment method for improving high-niobium reinforcing type monocrystal high temp alloy use property
06/08/2004US6746932 Method of reducing the thickness of a silicon substrate
06/03/2004WO2004046021A1 Dispersion of nanowires of semiconductor material
06/03/2004US20040104406 Method for treating the surface of a semiconductor material
06/02/2004EP1423259A1 Free-standing (al, ga, in)n and parting method for forming same
06/02/2004CN1502120A Treatment method and apparatus of substrate
06/02/2004CN1152415C Method for manufacturing discrete substrate
06/01/2004US6744065 Single electron devices
06/01/2004US6743495 Thermal annealing process for producing silicon wafers with improved surface characteristics
06/01/2004US6743481 Process for production of ultrathin protective overcoats
06/01/2004US6743289 Thermal annealing process for producing low defect density single crystal silicon
05/2004
05/27/2004US20040101976 Synthesis of stable colloidal nanocrystals using organic dendrons
05/27/2004US20040099205 Method of growing oriented calcium fluoride single crystals
05/26/2004EP1422753A1 Production method for anneal wafer and anneal wafer
05/26/2004CN1500159A Low defect density silicon substantially free of oxidution induced stacking faults having vacancy-dominated core
05/25/2004US6740912 Semiconductor device free of LLD regions
05/25/2004US6740421 Rolling process for producing biaxially textured substrates
05/25/2004US6740403 Graphitic polyhederal crystals in the form of nanotubes, whiskers and nanorods, methods for their production and uses thereof
05/20/2004US20040096707 Oxidation of nitride layer; forming oxide; high temperature superconductivity
05/20/2004US20040096587 Epitaxial oxide films via nitride conversion
05/19/2004CN1497680A Semiconductor chip with asymmetric edge contour and manufacturing method thereof
05/18/2004US6736893 Process for growing calcium fluoride monocrystals
05/18/2004US6736636 Thermal processor with gas supply
05/13/2004WO2004040650A1 Soi wafer and method for manufacturing soi wafer
05/13/2004US20040091224 Optical device
05/13/2004US20040089224 Process for producing low defect density silicon
05/13/2004US20040089023 Method for producing optical member
05/13/2004DE10239775B3 Production of a silicon wafer used in the production of a semiconductor component comprises treating the cleaned wafer with an aqueous ozone solution, coating with polycrystalline silicon, finely grinding, and epitaxially growing the wafer
05/12/2004CN1149585C Adjustment of mosaic spread for HOPG material
05/11/2004US6733592 High-temperature and high-pressure treatment device
05/06/2004US20040084152 Apparatus for large-scale diamond polishing
05/06/2004US20040083948 Method for low temperature photonic crystal structures
05/06/2004EP1222324B1 Czochralski process for growing single crystal silicon by controlling the cooling rate
05/04/2004US6730580 Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing
04/2004
04/29/2004WO2004035879A1 Method of measuring point defect distribution of silicon single crystal ingot
04/29/2004US20040079280 Combines deposition of synthetic diamond films with reactive etching processes; forming diamond nuclei on substrate, growing layer of textured diamond film on substrate, etching textured diamond film
04/22/2004WO2004034478A2 Layer arrangement of hetero-connected semiconductor layers, comprising at least one intermediate separation layer, and method for the production thereof
04/22/2004WO2004034457A1 Annealed wafer and annealed wafer manufacturing method
04/22/2004WO2004034453A1 Method for treating semiconductor material
04/22/2004DE10296668T5 Verfahren zur Züchtung von Kalziumfluorid-Monokristallen A method of growing monocrystals of calcium fluoride
04/21/2004EP1411153A1 METHOD FOR PREPARING GaN BASED COMPOUND SEMICONDUCTOR CRYSTAL
04/21/2004EP1409776A1 Method of making nanotube-based material with enhanced electron field emission properties
04/21/2004CN1491300A Method for reducing oxygen component and carbon component in fluoride
04/15/2004WO2004031456A2 Method for producing aluminum antimonide crystals for radiation detectors
04/15/2004US20040070012 Low defect density silicon
04/15/2004DE19549513B4 Multi-form crystal fabrication process
04/15/2004DE10247735B3 Layer arrangement used in the production of thin layer solar cells comprises a substrate, a metal film, a metal dichalcogenide separating layer and a chalcogenide semiconductor layer
04/14/2004EP1408540A1 Production method for anneal wafer and anneal wafer
04/14/2004EP1408348A1 Method for producing optical member
04/14/2004CN1489643A Process for preparing single crystal silicon having improved gate oxide integrity
04/13/2004US6720273 Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma out put or adjusting the same upwards
04/08/2004WO2004030047A1 Method of producing lithium tantalate substrate for surface acoustic wave element
04/08/2004WO2004030046A1 Method of producing lithium tantalate substrate for surface acoustic wave element
04/08/2004WO2004005593A3 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects
04/08/2004US20040067644 Non-contact etch annealing of strained layers
04/08/2004US20040065889 Semiconductor wafer, semiconductor device, and methods for fabricating the same
04/08/2004DE10340589A1 Production of a calcium fluoride single crystal comprises contacting a calcium fluoride charge with a seed crystal, heating to a temperature sufficient to form a melt, pulling a crystal through a temperature gradient zone, tempering
04/07/2004EP1405110A2 Preferred crystal orientation optical elements from cubic materials
04/07/2004EP1404902A1 High surface quality gan wafer and method of fabricating same
04/01/2004WO2004027125A1 Crystal base plate and pressing device
04/01/2004WO2004027123A1 Single crystal diamond
04/01/2004US20040062696 Method for reducing oxygen component and carbon component in fluoride
04/01/2004US20040061063 High resistivity aluminum antimonide radiation detector
04/01/2004DE10243757A1 Semiconductor chip manufacturing method, e.g. for LED manufacture, by matching thermal expansion coefficient to carrier to radiation profile and pulse length of laser beam used to separate from substrate
03/2004
03/31/2004EP1403663A1 Optical member, process for producing the same, and projection aligner
03/31/2004EP1402089A2 Synthesis of stable colloidal nanocrystals using organic dendrons
03/31/2004CN1144064C Method of organic film deposition
03/25/2004WO2003078699A9 Synthesis of stable colloidal nanocrystals using organic dendrons
03/25/2004US20040058080 Method for creating silicon dioxide film
03/25/2004US20040055998 Method for providing a smooth wafer surface
03/24/2004CN1483669A Method for adjusting unidimensional nano material direction and shape
03/23/2004US6709957 Method of producing epitaxial wafers
03/23/2004US6709730 Method of making diamond product and diamond product
03/23/2004US6709566 Shaping electrode removes material under a potential difference to controllably shape to a desired contour
03/18/2004WO2004022821A1 Coloured diamond
03/18/2004US20040053515 Apparatus and method for surface finishing a silicon film
03/18/2004US20040053432 Method for processing one-dimensional nano-materials
03/18/2004US20040050483 Method of fabricating substrates, in partictular for optics, electronics or optoelectronics
03/18/2004US20040050318 Calcium fluoride and its manufacture method
03/18/2004DE10337757A1 Semiconductor wafer, has asymmetric edge profile extending between inner and outer edge profiles with arc that defines inner profile at point of intersection with top surface of wafer
03/17/2004EP1397835A2 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure
03/17/2004CN1142330C Vanadate for measuring dislocation density and etching process of doped monocrystal
03/16/2004US6706324 Machining body with microstructure free of nano-crystals to produce chips consisting of nano-crystals as a result of sufficient strain deformation, chips being in form of particulates, ribbons, wires, filaments
03/16/2004US6706204 Method of fabricating and a device that includes nanosize pores having well controlled geometries
03/11/2004WO2004020705A1 Epitaxial wafer and its manufacturing method
03/10/2004CN1480569A Method of reducing crystal defect density
03/10/2004CN1480568A Method for preparing bonding taser crystal in vertical type with weight applied from top
03/09/2004US6703144 Heterointegration of materials using deposition and bonding
03/09/2004US6702891 Method of heat treating fluoride crystal
03/04/2004WO2004019403A2 Mechanical recycling of a wafer comprising a buffer layer, after having taken a layer therefrom
03/04/2004WO2004018743A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method
03/04/2004US20040041143 Semiconductor wafers having asymmetric edge profiles that facilitate high yield processing by inhibiting particulate contamination and methods of forming same
03/04/2004US20040040654 Method for joining
03/03/2004EP1394293A1 A process for imparting and enhancement of colours in gemstone minerals and gemstone minerals obtained thereby
03/03/2004EP1393354A1 Method and device for the thermal treatment of substrates
03/03/2004EP1393351A1 Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure
03/03/2004EP1392895A2 Semi-insulating silicon carbide without vanadium domination
02/2004
02/26/2004US20040038527 Method of forming spatial regions of a second material in a first material
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