| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 03/24/2005 | US20050061228 Process for strengthen grain boundaries of an article made from a Ni based superalloy |
| 03/23/2005 | EP1517368A2 Protection of a SiC surface via a GaN-layer |
| 03/23/2005 | EP1516944A1 The improvement of the luminescent efficiency of Semiconductor Nanocrystals by Surface Treatment |
| 03/23/2005 | EP1516361A1 Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| 03/23/2005 | CN1194382C Silicon-semiconductor lining and its producing method |
| 03/22/2005 | US6869480 Method for the production of nanometer scale step height reference specimens |
| 03/17/2005 | WO2005023703A2 Method for producing at least one cavity in a material |
| 03/17/2005 | US20050059257 Highly crystalline aluminum nitride multi-layered substrate and production process thereof |
| 03/17/2005 | US20050056204 Rare earth silicate single crystal and process for production of rare earth silicate single crystals |
| 03/17/2005 | DE10222879A1 Messung niedriger Wafer-Temperaturen Measurement of low wafer temperatures |
| 03/16/2005 | CN1595673A The improvement of the luminescent efficiency of semiconductor nanocrystals by surface treatment |
| 03/10/2005 | US20050054131 Solution to thermal budget |
| 03/10/2005 | US20050053890 Thermal treatment system for semiconductors |
| 03/10/2005 | US20050051769 Luminescent efficiency of semiconductor nanocrystals by surface treatment |
| 03/10/2005 | US20050051516 Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument |
| 03/09/2005 | EP1513193A1 Method for manufacturing silicon wafer |
| 03/08/2005 | US6863732 Heat treatment system and method |
| 03/03/2005 | WO2005019508A1 Ferroelectric thin-film production method, voltage-application etching apparatus, ferroelectric crystal thin-film substrate, and ferroelectric crystal wafer |
| 03/03/2005 | WO2004088762A3 Manufacture of high critical temperature superconducting part using uniaxial pressure during oxygenation step |
| 03/03/2005 | DE10392337T5 Verfahren zum Herstellen einer orientierten Vorform aus einem Fluoridkristall A method of manufacturing an oriented preform of a fluoride crystal |
| 03/02/2005 | CN1191608C Silicon semiconductor base-plate and its making method |
| 03/01/2005 | US6861360 Double-sided polishing process for producing a multiplicity of silicon semiconductor wafers |
| 02/24/2005 | WO2005017533A1 Method for identifying weakly binding molecule fragments having ligand properties, whereby the molecule fragments are applied in the form of microdrops of a corresponding solution to the crystal |
| 02/24/2005 | WO2005017236A1 Device and method for treating a crystal by applying microdrops thereto |
| 02/24/2005 | US20050042800 Production method of sic monitor wafer |
| 02/24/2005 | US20050039671 Silicon single crystal wafer fabricating method and silicon single crystal wafer |
| 02/23/2005 | CN2680686Y Thermostable crystal annealing apparatus |
| 02/23/2005 | CN1190530C Process for preparing chemical-specific Mg-doped lithium niobate crystal with periodic polarizing microstructure |
| 02/22/2005 | US6858107 Method of fabricating substrates, in particular for optics, electronics or optoelectronics |
| 02/22/2005 | US6858094 High resistivity and high gettering ability; DZ-IG wafer that can serve as an alternative of SOI wafer for mobile communications |
| 02/17/2005 | WO2005015626A1 Method for producing single crystal ingot from which semiconductor wafer is sliced |
| 02/17/2005 | WO2005014898A1 Process for producing wafer |
| 02/17/2005 | WO2005014896A1 A method of fabricating an epitaxially grown layer |
| 02/17/2005 | WO2005014895A1 A method of fabricating an epitaxially grown layer |
| 02/17/2005 | US20050035380 Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer |
| 02/17/2005 | US20050035349 Epitaxial wafer and method for manufacturing method |
| 02/17/2005 | US20050034650 Ultrahard diamonds and method of making thereof |
| 02/17/2005 | DE102004017142A1 Lithiumtantalat-Substrat und Verfahren zur seiner Herstellung Lithium tantalate substrate and process for its preparation |
| 02/17/2005 | CA2521513A1 Method for producing single crystal ingot from which semiconductor wafer is sliced |
| 02/16/2005 | CN1579976A Method for inducing functional cryctalline material from glass and crystalline using femtosecond laser |
| 02/16/2005 | CN1189928C Semiconductor heat treatment process and equipment, and semiconductor by said process heat treatment |
| 02/15/2005 | US6855619 Method and device for making substrates |
| 02/15/2005 | US6855202 Shaped nanocrystal particles and methods for making the same |
| 02/10/2005 | WO2005013337A2 Rapid generation of nanoparticles from bulk solids at room temperature |
| 02/10/2005 | US20050028936 Apparatus for stabilizing high pressure oxidation of a semiconductor device |
| 02/10/2005 | CA2518349A1 Rapid generation of nanoparticles from bulk solids at room temperature |
| 02/09/2005 | EP1505375A1 Method for producing the sensing element of an ultra-violet indicator |
| 02/09/2005 | EP1505179A1 Procedure for identifying weakly binding molecule fragments with ligand properties with the molecule fragments being applied to the crystal as micro-drops of a corresponding solution |
| 02/09/2005 | CN1577510A Substrate for magnetic recording medium and producing method thereof, and magnetic recording medium |
| 02/08/2005 | US6852160 Epitaxial oxide films via nitride conversion |
| 02/03/2005 | WO2005010949A2 Solution to thermal budget |
| 02/03/2005 | WO2005010245A1 Method of manufacturing diamond substrates |
| 02/03/2005 | US20050025886 Annealing single crystal chemical vapor depositon diamonds |
| 02/03/2005 | DE10331513A1 Manufacture of highly purified metal fluoride, e.g. calcium fluoride for preparing optical items, involves heating a less pure metal fluoride and treating with fluorinating agent |
| 02/02/2005 | EP1502283A2 Method of etching substrates |
| 02/02/2005 | CN1574408A Piezoelectric single crystal device and fabrication method thereof |
| 01/27/2005 | WO2005007942A1 Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| 01/27/2005 | WO2005007940A1 Method of producing silicon wafer and silicon wafer |
| 01/27/2005 | WO2005007937A2 Annealing single crystal chemical vapor deposition diamonds |
| 01/27/2005 | WO2005007936A2 Ultrahard diamonds and method of making thereof |
| 01/27/2005 | WO2005007935A2 Tough diamonds and method of making thereof |
| 01/27/2005 | WO2005007934A2 Method for producing piezoelectric monocrystals having a polydomain structure for accurate positioning devices |
| 01/27/2005 | WO2005007568A2 Gas storage medium and methods |
| 01/27/2005 | WO2004053929A3 Semiconductor nanocrystal heterostructures |
| 01/27/2005 | US20050016446 CaF2 lenses with reduced birefringence |
| 01/27/2005 | CA2532384A1 Annealing single crystal chemical vapor deposition diamonds |
| 01/27/2005 | CA2532227A1 Tough diamonds and method of making thereof |
| 01/26/2005 | EP1500722A1 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation |
| 01/26/2005 | CN1569746A Method for preparing inorganic crystal whisker with SiO2-coated surface |
| 01/26/2005 | CN1186484C Tellurium-Zinc-cadmium crystal annealing and modifying method |
| 01/25/2005 | US6846539 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| 01/20/2005 | WO2005005316A1 Process for the manufacture of high purity metal fluorides |
| 01/20/2005 | WO2004070089A3 Deposition of layers on substrates |
| 01/20/2005 | US20050011860 Substrate for magnetic recording medium, method for manufacturing the same and magnetic recording medium |
| 01/20/2005 | US20050011433 Tough diamonds and method of making thereof |
| 01/19/2005 | EP1497030A2 Device based on partially oxidized porous silicon and method for the production thereof |
| 01/19/2005 | EP0801606B1 Method for treating a surface |
| 01/19/2005 | CN1566418A Parameter monitoring system and method for wafer processing capacity per hour of wafer processing furnace |
| 01/18/2005 | US6843201 Temperature control for single substrate semiconductor processing reactor |
| 01/13/2005 | WO2005004197A2 Fluidic nanotubes and devices |
| 01/13/2005 | US20050005841 Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| 01/13/2005 | CA2522222A1 Fluidic nanotubes and devices |
| 01/12/2005 | EP1495163A1 Selectively aligning nanometer-scale components using ac fields |
| 01/12/2005 | CN1563512A Method for preparing protective layer of nitride on crystal whisker surface of aluminium borate |
| 01/12/2005 | CN1184352C Convex angle compensation method of crystal orientation on silicon by potassium hydroxide solution |
| 01/11/2005 | US6841249 Method of a diamond surface and corresponding diamond surface |
| 01/11/2005 | US6841002 Method for forming carbon nanotubes with post-treatment step |
| 01/11/2005 | US6840997 Vacancy, dominsated, defect-free silicon |
| 01/06/2005 | WO2005001907A1 THE METHOD OF PREPARING COMPOSITE SUBSTRATE MATERIALS OF Ϝ-LiAlO2 /α-Al2O3 |
| 01/06/2005 | US20050000938 Method of making diamond product and diamond product |
| 01/06/2005 | US20050000452 Electromagnetic rotation of platter |
| 01/05/2005 | CN1560907A Laser annealing device and its laser annealing method |
| 01/05/2005 | CN1560334A Apparatus for annealing of crystal with high temp. resistance |
| 01/05/2005 | CN1560333A Process for producing periodicity field reverse of Gd2 (MoO4)3 crystal |
| 12/30/2004 | US20040262636 Fluidic nanotubes and devices |
| 12/29/2004 | WO2004114387A1 Method for producing semiconductor single crystal wafer and laser processing device used therefor |
| 12/29/2004 | WO2004113597A1 The technique of production of fancy red diamonds |
| 12/29/2004 | CN1559079A Heating system and method of reactor for heating atmosphere |
| 12/29/2004 | CA2508733A1 Method for producing semiconductor single crystal wafer and laser processing device used therefor |
| 12/28/2004 | US6835661 Method for manufacturing optical element |